{"id":"https://openalex.org/W4401880290","doi":"https://doi.org/10.1109/vlsitechnologyandcir46783.2024.10631470","title":"Replacement Metal Gate Process Extendible Beyond 2-nm Node with Superior Gate Conductivity","display_name":"Replacement Metal Gate Process Extendible Beyond 2-nm Node with Superior Gate Conductivity","publication_year":2024,"publication_date":"2024-06-16","ids":{"openalex":"https://openalex.org/W4401880290","doi":"https://doi.org/10.1109/vlsitechnologyandcir46783.2024.10631470"},"language":"en","primary_location":{"id":"doi:10.1109/vlsitechnologyandcir46783.2024.10631470","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/vlsitechnologyandcir46783.2024.10631470","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100915372","display_name":"Naomi Yoshida","orcid":null},"institutions":[{"id":"https://openalex.org/I193427800","display_name":"Applied Materials (United States)","ror":"https://ror.org/04h1q4c89","country_code":"US","type":"company","lineage":["https://openalex.org/I193427800"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Naomi Yoshida","raw_affiliation_strings":["Applied Materials Inc.,Santa Clara,California,U.S.A"],"affiliations":[{"raw_affiliation_string":"Applied Materials Inc.,Santa Clara,California,U.S.A","institution_ids":["https://openalex.org/I193427800"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5017606126","display_name":"Ilanit Fisher","orcid":null},"institutions":[{"id":"https://openalex.org/I193427800","display_name":"Applied Materials (United States)","ror":"https://ror.org/04h1q4c89","country_code":"US","type":"company","lineage":["https://openalex.org/I193427800"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Ilanit Fisher","raw_affiliation_strings":["Applied Materials Inc.,Santa Clara,California,U.S.A"],"affiliations":[{"raw_affiliation_string":"Applied Materials Inc.,Santa Clara,California,U.S.A","institution_ids":["https://openalex.org/I193427800"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100664206","display_name":"Ren He","orcid":"https://orcid.org/0000-0003-1208-7089"},"institutions":[{"id":"https://openalex.org/I193427800","display_name":"Applied Materials (United States)","ror":"https://ror.org/04h1q4c89","country_code":"US","type":"company","lineage":["https://openalex.org/I193427800"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"He Ren","raw_affiliation_strings":["Applied Materials Inc.,Santa Clara,California,U.S.A"],"affiliations":[{"raw_affiliation_string":"Applied Materials Inc.,Santa Clara,California,U.S.A","institution_ids":["https://openalex.org/I193427800"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100845243","display_name":"Chi-Chou Lin","orcid":null},"institutions":[{"id":"https://openalex.org/I193427800","display_name":"Applied Materials (United States)","ror":"https://ror.org/04h1q4c89","country_code":"US","type":"company","lineage":["https://openalex.org/I193427800"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Chi-Chou Lin","raw_affiliation_strings":["Applied Materials Inc.,Santa Clara,California,U.S.A"],"affiliations":[{"raw_affiliation_string":"Applied Materials Inc.,Santa Clara,California,U.S.A","institution_ids":["https://openalex.org/I193427800"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5020593706","display_name":"Chenfei Shen","orcid":"https://orcid.org/0000-0001-9662-355X"},"institutions":[{"id":"https://openalex.org/I193427800","display_name":"Applied Materials (United States)","ror":"https://ror.org/04h1q4c89","country_code":"US","type":"company","lineage":["https://openalex.org/I193427800"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Chenfei Shen","raw_affiliation_strings":["Applied Materials Inc.,Santa Clara,California,U.S.A"],"affiliations":[{"raw_affiliation_string":"Applied Materials Inc.,Santa Clara,California,U.S.A","institution_ids":["https://openalex.org/I193427800"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113859527","display_name":"Yongjing Lin","orcid":null},"institutions":[{"id":"https://openalex.org/I193427800","display_name":"Applied Materials (United States)","ror":"https://ror.org/04h1q4c89","country_code":"US","type":"company","lineage":["https://openalex.org/I193427800"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Yongjing Lin","raw_affiliation_strings":["Applied Materials Inc.,Santa Clara,California,U.S.A"],"affiliations":[{"raw_affiliation_string":"Applied Materials Inc.,Santa Clara,California,U.S.A","institution_ids":["https://openalex.org/I193427800"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103525403","display_name":"Yi Xu","orcid":"https://orcid.org/0009-0003-1764-2114"},"institutions":[{"id":"https://openalex.org/I193427800","display_name":"Applied Materials (United States)","ror":"https://ror.org/04h1q4c89","country_code":"US","type":"company","lineage":["https://openalex.org/I193427800"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Yi Xu","raw_affiliation_strings":["Applied Materials Inc.,Santa Clara,California,U.S.A"],"affiliations":[{"raw_affiliation_string":"Applied Materials Inc.,Santa Clara,California,U.S.A","institution_ids":["https://openalex.org/I193427800"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5034903311","display_name":"Michael S. Chen","orcid":"https://orcid.org/0000-0003-0767-4238"},"institutions":[{"id":"https://openalex.org/I193427800","display_name":"Applied Materials (United States)","ror":"https://ror.org/04h1q4c89","country_code":"US","type":"company","lineage":["https://openalex.org/I193427800"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Michael S-.C. Chen","raw_affiliation_strings":["Applied Materials Inc.,Santa Clara,California,U.S.A"],"affiliations":[{"raw_affiliation_string":"Applied Materials Inc.,Santa Clara,California,U.S.A","institution_ids":["https://openalex.org/I193427800"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5113477820","display_name":"Mehul Naik","orcid":null},"institutions":[{"id":"https://openalex.org/I193427800","display_name":"Applied Materials (United States)","ror":"https://ror.org/04h1q4c89","country_code":"US","type":"company","lineage":["https://openalex.org/I193427800"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Mehul Naik","raw_affiliation_strings":["Applied Materials Inc.,Santa Clara,California,U.S.A"],"affiliations":[{"raw_affiliation_string":"Applied Materials Inc.,Santa Clara,California,U.S.A","institution_ids":["https://openalex.org/I193427800"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":9,"corresponding_author_ids":["https://openalex.org/A5100915372"],"corresponding_institution_ids":["https://openalex.org/I193427800"],"apc_list":null,"apc_paid":null,"fwci":0.2225,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.52102261,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":91,"max":95},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"2"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9908000230789185,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9908000230789185,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9711999893188477,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.963699996471405,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/metal-gate","display_name":"Metal gate","score":0.6604925990104675},{"id":"https://openalex.org/keywords/node","display_name":"Node (physics)","score":0.6482900381088257},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6217266321182251},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6069822311401367},{"id":"https://openalex.org/keywords/conductivity","display_name":"Conductivity","score":0.5932477712631226},{"id":"https://openalex.org/keywords/process","display_name":"Process (computing)","score":0.5400216579437256},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.49881696701049805},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.37116333842277527},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.35135194659233093},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.33188968896865845},{"id":"https://openalex.org/keywords/gate-oxide","display_name":"Gate oxide","score":0.20876622200012207},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.16744539141654968},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.15767249464988708},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.13806557655334473},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.129216730594635},{"id":"https://openalex.org/keywords/operating-system","display_name":"Operating system","score":0.09981641173362732}],"concepts":[{"id":"https://openalex.org/C51140833","wikidata":"https://www.wikidata.org/wiki/Q6822740","display_name":"Metal gate","level":5,"score":0.6604925990104675},{"id":"https://openalex.org/C62611344","wikidata":"https://www.wikidata.org/wiki/Q1062658","display_name":"Node (physics)","level":2,"score":0.6482900381088257},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6217266321182251},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6069822311401367},{"id":"https://openalex.org/C131540310","wikidata":"https://www.wikidata.org/wiki/Q907564","display_name":"Conductivity","level":2,"score":0.5932477712631226},{"id":"https://openalex.org/C98045186","wikidata":"https://www.wikidata.org/wiki/Q205663","display_name":"Process (computing)","level":2,"score":0.5400216579437256},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.49881696701049805},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.37116333842277527},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.35135194659233093},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.33188968896865845},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.20876622200012207},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.16744539141654968},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.15767249464988708},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.13806557655334473},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.129216730594635},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.09981641173362732},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/vlsitechnologyandcir46783.2024.10631470","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/vlsitechnologyandcir46783.2024.10631470","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.699999988079071,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":1,"referenced_works":["https://openalex.org/W4252026737"],"related_works":["https://openalex.org/W1544970605","https://openalex.org/W1624163887","https://openalex.org/W2323264192","https://openalex.org/W2994818057","https://openalex.org/W2732063974","https://openalex.org/W2026083044","https://openalex.org/W2054051191","https://openalex.org/W1601145012","https://openalex.org/W1482694311","https://openalex.org/W2035420629"],"abstract_inverted_index":{"This":[0],"paper":[1],"describes":[2],"a":[3],"selective":[4],"metal":[5,30,60],"cap":[6,61],"on":[7,62],"replacement-metal-gate":[8],"(RMG)":[9],"for":[10],"gate":[11,31,35,49,73,78],"scaling":[12,25],"with":[13,37,75],"high":[14,72],"conductivity.":[15],"Gate":[16],"length":[17],"is":[18,66,82],"reaching":[19],"to":[20,70,84],"12":[21],"nm,":[22],"as":[23],"CMOS":[24,55],"continues.":[26],"RMG":[27,65],"requires":[28],"multiple":[29],"layers":[32],"and":[33,52,89],"occupy":[34],"trench":[36],"high-resistivity":[38],"work":[39],"function":[40],"layers.":[41],"The":[42,80],"lack":[43],"of":[44,64],"low-resistivity":[45],"W":[46],"fill":[47],"causes":[48],"conductance":[50],"degradation":[51],"negatively":[53],"impacts":[54],"performance.":[56],"Thin":[57],"highly":[58],"conductive":[59],"top":[63],"an":[67],"effective":[68],"way":[69],"maintain":[71],"conductivity":[74],"extremely":[76],"scaled":[77],"trench.":[79],"technology":[81],"extendible":[83],"2":[85],"nm":[86],"node":[87],"GAA-FET":[88],"beyond.":[90]},"counts_by_year":[{"year":2025,"cited_by_count":1}],"updated_date":"2025-12-26T23:08:49.675405","created_date":"2025-10-10T00:00:00"}