{"id":"https://openalex.org/W4401881610","doi":"https://doi.org/10.1109/vlsitechnologyandcir46783.2024.10631369","title":"Positive Bias Stress Measurement Guideline and Band Analysis for Evaluating Instability of Oxide Semiconductor Transistors","display_name":"Positive Bias Stress Measurement Guideline and Band Analysis for Evaluating Instability of Oxide Semiconductor Transistors","publication_year":2024,"publication_date":"2024-06-16","ids":{"openalex":"https://openalex.org/W4401881610","doi":"https://doi.org/10.1109/vlsitechnologyandcir46783.2024.10631369"},"language":"en","primary_location":{"id":"doi:10.1109/vlsitechnologyandcir46783.2024.10631369","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vlsitechnologyandcir46783.2024.10631369","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101333775","display_name":"Qi Jiang","orcid":null},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Qi Jiang","raw_affiliation_strings":["Stanford University,Dept. of Electrical Engineering,CA,USA,94305"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Stanford University,Dept. of Electrical Engineering,CA,USA,94305","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5024308803","display_name":"Koustav Jana","orcid":"https://orcid.org/0000-0002-7054-8704"},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Koustav Jana","raw_affiliation_strings":["Stanford University,Dept. of Electrical Engineering,CA,USA,94305"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Stanford University,Dept. of Electrical Engineering,CA,USA,94305","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5086771285","display_name":"Kasidit Toprasertpong","orcid":"https://orcid.org/0000-0003-4206-8698"},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Kasidit Toprasertpong","raw_affiliation_strings":["Stanford University,Dept. of Electrical Engineering,CA,USA,94305"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Stanford University,Dept. of Electrical Engineering,CA,USA,94305","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101976379","display_name":"Shuhan Liu","orcid":"https://orcid.org/0000-0001-5705-565X"},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Shuhan Liu","raw_affiliation_strings":["Stanford University,Dept. of Electrical Engineering,CA,USA,94305"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Stanford University,Dept. of Electrical Engineering,CA,USA,94305","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5059975258","display_name":"H.\u2010S. Philip Wong","orcid":"https://orcid.org/0000-0002-0096-1472"},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"H.-S. Philip Wong","raw_affiliation_strings":["Stanford University,Dept. of Electrical Engineering,CA,USA,94305"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Stanford University,Dept. of Electrical Engineering,CA,USA,94305","institution_ids":["https://openalex.org/I97018004"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I97018004"],"apc_list":null,"apc_paid":null,"fwci":1.816,"has_fulltext":false,"cited_by_count":10,"citation_normalized_percentile":{"value":0.85488546,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":98,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"2"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.652535080909729},{"id":"https://openalex.org/keywords/guideline","display_name":"Guideline","score":0.6409021019935608},{"id":"https://openalex.org/keywords/stress","display_name":"Stress (linguistics)","score":0.59874027967453},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5921733379364014},{"id":"https://openalex.org/keywords/semiconductor","display_name":"Semiconductor","score":0.5713322162628174},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5637103319168091},{"id":"https://openalex.org/keywords/wide-bandgap-semiconductor","display_name":"Wide-bandgap semiconductor","score":0.5229131579399109},{"id":"https://openalex.org/keywords/instability","display_name":"Instability","score":0.49997615814208984},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3438115119934082},{"id":"https://openalex.org/keywords/engineering-physics","display_name":"Engineering physics","score":0.32843267917633057},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2722506821155548},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1971292495727539},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.15196290612220764},{"id":"https://openalex.org/keywords/medicine","display_name":"Medicine","score":0.11193302273750305},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.098775714635849},{"id":"https://openalex.org/keywords/mechanics","display_name":"Mechanics","score":0.06926226615905762}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.652535080909729},{"id":"https://openalex.org/C2780182762","wikidata":"https://www.wikidata.org/wiki/Q1630279","display_name":"Guideline","level":2,"score":0.6409021019935608},{"id":"https://openalex.org/C21036866","wikidata":"https://www.wikidata.org/wiki/Q181767","display_name":"Stress (linguistics)","level":2,"score":0.59874027967453},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5921733379364014},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.5713322162628174},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5637103319168091},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.5229131579399109},{"id":"https://openalex.org/C207821765","wikidata":"https://www.wikidata.org/wiki/Q405372","display_name":"Instability","level":2,"score":0.49997615814208984},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3438115119934082},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.32843267917633057},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2722506821155548},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1971292495727539},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.15196290612220764},{"id":"https://openalex.org/C71924100","wikidata":"https://www.wikidata.org/wiki/Q11190","display_name":"Medicine","level":0,"score":0.11193302273750305},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.098775714635849},{"id":"https://openalex.org/C57879066","wikidata":"https://www.wikidata.org/wiki/Q41217","display_name":"Mechanics","level":1,"score":0.06926226615905762},{"id":"https://openalex.org/C142724271","wikidata":"https://www.wikidata.org/wiki/Q7208","display_name":"Pathology","level":1,"score":0.0},{"id":"https://openalex.org/C41895202","wikidata":"https://www.wikidata.org/wiki/Q8162","display_name":"Linguistics","level":1,"score":0.0},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/vlsitechnologyandcir46783.2024.10631369","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vlsitechnologyandcir46783.2024.10631369","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.6299999952316284,"display_name":"Climate action","id":"https://metadata.un.org/sdg/13"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":3,"referenced_works":["https://openalex.org/W4252026737","https://openalex.org/W4313291426","https://openalex.org/W4386767033"],"related_works":["https://openalex.org/W2339422290","https://openalex.org/W2397653702","https://openalex.org/W4233871529","https://openalex.org/W2338818750","https://openalex.org/W3019157102","https://openalex.org/W2365451219","https://openalex.org/W2415869793","https://openalex.org/W4211072166","https://openalex.org/W1818257336","https://openalex.org/W1578199437"],"abstract_inverted_index":{"Instability":[0],"of":[1,15,31,62,91,100,119,127],"oxide":[2],"semiconductor":[3,24],"field":[4],"effect":[5],"transistors":[6],"(OSFET)":[7],"under":[8,35,64],"positive":[9],"bias":[10],"stress":[11,78],"(PBS)":[12],"is":[13,68],"one":[14],"the":[16,23,32,59,82,88,93,98,128],"major":[17],"hinderances":[18],"to":[19,96,113],"broad":[20],"adoption":[21],"by":[22,37],"industry.":[25],"We":[26],"present":[27],"a":[28,65,109,115],"holistic":[29],"understanding":[30,126],"OSFET":[33],"behavior":[34],"PBS,":[36],"comparing":[38],"OSFETs":[39,63,120],"with":[40,121],"different":[41,48,77,123],"channel":[42,73],"doping":[43],"(N<inf":[44],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[45,53],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">CH</inf>),":[46],"hence":[47],"initial":[49],"threshold":[50],"voltages":[51],"(V<inf":[52],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">TH</inf>).":[54],"Our":[55],"analysis":[56],"reveals":[57],"that":[58],"band":[60],"profile":[61],"given":[66],"voltage":[67],"strongly":[69],"dependent":[70],"on":[71],"their":[72],"doping,":[74],"resulting":[75],"in":[76,107],"responses":[79],"even":[80],"for":[81],"same":[83],"material":[84],"properties.":[85],"This":[86,102],"raises":[87],"important":[89],"question":[90],"finding":[92],"right":[94],"metric":[95],"evaluate":[97],"stability":[99,133],"OSFETs.":[101],"work":[103],"makes":[104],"significant":[105],"strides":[106],"establishing":[108],"PBS":[110,132],"test":[111],"guideline":[112],"ensure":[114],"fair":[116],"benchmark":[117],"method":[118],"vastly":[122],"NCH,":[124],"and":[125,134],"associated":[129],"trade-off":[130],"between":[131],"Vth.":[135]},"counts_by_year":[{"year":2026,"cited_by_count":4},{"year":2025,"cited_by_count":6}],"updated_date":"2026-06-26T08:34:08.712188","created_date":"2025-10-10T00:00:00"}