{"id":"https://openalex.org/W4401879598","doi":"https://doi.org/10.1109/vlsitechnologyandcir46783.2024.10631348","title":"Low-Damage Processed and High-Pressure Annealed High-k Hafnium Zirconium Oxide Capacitors near Morphotropic Phase Boundary with Record-Low EOT of 2.4\u00c5 & high-k of 70 for DRAM Technology","display_name":"Low-Damage Processed and High-Pressure Annealed High-k Hafnium Zirconium Oxide Capacitors near Morphotropic Phase Boundary with Record-Low EOT of 2.4\u00c5 & high-k of 70 for DRAM Technology","publication_year":2024,"publication_date":"2024-06-16","ids":{"openalex":"https://openalex.org/W4401879598","doi":"https://doi.org/10.1109/vlsitechnologyandcir46783.2024.10631348"},"language":"en","primary_location":{"id":"doi:10.1109/vlsitechnologyandcir46783.2024.10631348","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vlsitechnologyandcir46783.2024.10631348","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5086125715","display_name":"V. Gaddam","orcid":"https://orcid.org/0000-0002-0175-5881"},"institutions":[{"id":"https://openalex.org/I157485424","display_name":"Korea Advanced Institute of Science and Technology","ror":"https://ror.org/05apxxy63","country_code":"KR","type":"education","lineage":["https://openalex.org/I157485424"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Venkateswarlu Gaddam","raw_affiliation_strings":["School of Electrical Engineering, Korea Advanced Institute of Science and Technology,Daejeon,Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical Engineering, Korea Advanced Institute of Science and Technology,Daejeon,Republic of Korea","institution_ids":["https://openalex.org/I157485424"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5032709583","display_name":"Junghyeon Hwang","orcid":"https://orcid.org/0000-0002-2026-2097"},"institutions":[{"id":"https://openalex.org/I157485424","display_name":"Korea Advanced Institute of Science and Technology","ror":"https://ror.org/05apxxy63","country_code":"KR","type":"education","lineage":["https://openalex.org/I157485424"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Junghyeon Hwang","raw_affiliation_strings":["School of Electrical Engineering, Korea Advanced Institute of Science and Technology,Daejeon,Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical Engineering, Korea Advanced Institute of Science and Technology,Daejeon,Republic of Korea","institution_ids":["https://openalex.org/I157485424"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5034095384","display_name":"Hunbeom Shin","orcid":"https://orcid.org/0000-0001-5751-7973"},"institutions":[{"id":"https://openalex.org/I157485424","display_name":"Korea Advanced Institute of Science and Technology","ror":"https://ror.org/05apxxy63","country_code":"KR","type":"education","lineage":["https://openalex.org/I157485424"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hunbeom Shin","raw_affiliation_strings":["School of Electrical Engineering, Korea Advanced Institute of Science and Technology,Daejeon,Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical Engineering, Korea Advanced Institute of Science and Technology,Daejeon,Republic of Korea","institution_ids":["https://openalex.org/I157485424"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5037836125","display_name":"Chaeheon Kim","orcid":"https://orcid.org/0009-0004-2320-5778"},"institutions":[{"id":"https://openalex.org/I157485424","display_name":"Korea Advanced Institute of Science and Technology","ror":"https://ror.org/05apxxy63","country_code":"KR","type":"education","lineage":["https://openalex.org/I157485424"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Chaeheon Kim","raw_affiliation_strings":["School of Electrical Engineering, Korea Advanced Institute of Science and Technology,Daejeon,Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical Engineering, Korea Advanced Institute of Science and Technology,Daejeon,Republic of Korea","institution_ids":["https://openalex.org/I157485424"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5026532823","display_name":"Giuk Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I157485424","display_name":"Korea Advanced Institute of Science and Technology","ror":"https://ror.org/05apxxy63","country_code":"KR","type":"education","lineage":["https://openalex.org/I157485424"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Giuk Kim","raw_affiliation_strings":["School of Electrical Engineering, Korea Advanced Institute of Science and Technology,Daejeon,Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical Engineering, Korea Advanced Institute of Science and Technology,Daejeon,Republic of Korea","institution_ids":["https://openalex.org/I157485424"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100388391","display_name":"Hyungjun Kim","orcid":"https://orcid.org/0000-0003-2256-8046"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hyung-Jun Kim","raw_affiliation_strings":["SAIT,Suwon,Gyeonggi-do,Republic of Korea","Samsung Electronics,Hwaseong,Gyeonggi-do,Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"SAIT,Suwon,Gyeonggi-do,Republic of Korea","institution_ids":[]},{"raw_affiliation_string":"Samsung Electronics,Hwaseong,Gyeonggi-do,Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101774771","display_name":"Jooho Lee","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Jooho Lee","raw_affiliation_strings":["SAIT,Suwon,Gyeonggi-do,Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"SAIT,Suwon,Gyeonggi-do,Republic of Korea","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100650582","display_name":"Hyuncheol Kim","orcid":"https://orcid.org/0009-0002-1336-2361"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hyun-Cheol Kim","raw_affiliation_strings":["SAIT,Suwon,Gyeonggi-do,Republic of Korea","Samsung Electronics,Hwaseong,Gyeonggi-do,Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"SAIT,Suwon,Gyeonggi-do,Republic of Korea","institution_ids":[]},{"raw_affiliation_string":"Samsung Electronics,Hwaseong,Gyeonggi-do,Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5007599176","display_name":"Bumsu Park","orcid":"https://orcid.org/0000-0003-1052-8848"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Bumsu Park","raw_affiliation_strings":["Samsung Electronics,Hwaseong,Gyeonggi-do,Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics,Hwaseong,Gyeonggi-do,Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5079841922","display_name":"Suhwan Lim","orcid":"https://orcid.org/0000-0003-3578-5488"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Suhwan Lim","raw_affiliation_strings":["Samsung Electronics,Hwaseong,Gyeonggi-do,Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics,Hwaseong,Gyeonggi-do,Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5001679413","display_name":"SangYun Kim","orcid":"https://orcid.org/0000-0002-9101-5704"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sang Yun Kim","raw_affiliation_strings":["Samsung Electronics,Hwaseong,Gyeonggi-do,Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics,Hwaseong,Gyeonggi-do,Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100443625","display_name":"Kwang-Soo Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kwangsoo Kim","raw_affiliation_strings":["Samsung Electronics,Hwaseong,Gyeonggi-do,Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics,Hwaseong,Gyeonggi-do,Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100402789","display_name":"Sungho Lee","orcid":"https://orcid.org/0000-0002-8291-4644"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sungho Lee","raw_affiliation_strings":["Samsung Electronics,Hwaseong,Gyeonggi-do,Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics,Hwaseong,Gyeonggi-do,Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5015290434","display_name":"Daewon Ha","orcid":"https://orcid.org/0000-0002-9061-8626"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Daewon Ha","raw_affiliation_strings":["Samsung Electronics,Hwaseong,Gyeonggi-do,Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics,Hwaseong,Gyeonggi-do,Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5005572481","display_name":"Jinho Ahn","orcid":"https://orcid.org/0000-0001-8271-5998"},"institutions":[{"id":"https://openalex.org/I4575257","display_name":"Hanyang University","ror":"https://ror.org/046865y68","country_code":"KR","type":"education","lineage":["https://openalex.org/I4575257"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jinho Ahn","raw_affiliation_strings":["Hanyang University,Division of Materials Science and Engineering,Seoul,Korea,04763"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Hanyang University,Division of Materials Science and Engineering,Seoul,Korea,04763","institution_ids":["https://openalex.org/I4575257"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5029046108","display_name":"Sanghun Jeon","orcid":"https://orcid.org/0000-0002-4222-1587"},"institutions":[{"id":"https://openalex.org/I157485424","display_name":"Korea Advanced Institute of Science and Technology","ror":"https://ror.org/05apxxy63","country_code":"KR","type":"education","lineage":["https://openalex.org/I157485424"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sanghun Jeon","raw_affiliation_strings":["School of Electrical Engineering, Korea Advanced Institute of Science and Technology,Daejeon,Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical Engineering, Korea Advanced Institute of Science and Technology,Daejeon,Republic of Korea","institution_ids":["https://openalex.org/I157485424"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":16,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":2.2275,"has_fulltext":false,"cited_by_count":12,"citation_normalized_percentile":{"value":0.88277793,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":98,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"2"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12588","display_name":"Electronic and Structural Properties of Oxides","score":0.9984999895095825,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/hafnium","display_name":"Hafnium","score":0.8457801938056946},{"id":"https://openalex.org/keywords/high-pressure","display_name":"High pressure","score":0.7056097388267517},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6729893684387207},{"id":"https://openalex.org/keywords/dram","display_name":"Dram","score":0.6659799814224243},{"id":"https://openalex.org/keywords/capacitor","display_name":"Capacitor","score":0.6202600002288818},{"id":"https://openalex.org/keywords/zirconium","display_name":"Zirconium","score":0.5125126838684082},{"id":"https://openalex.org/keywords/phase-boundary","display_name":"Phase boundary","score":0.49764516949653625},{"id":"https://openalex.org/keywords/annealing","display_name":"Annealing (glass)","score":0.4289814829826355},{"id":"https://openalex.org/keywords/phase","display_name":"Phase (matter)","score":0.4236012399196625},{"id":"https://openalex.org/keywords/high-\u03ba-dielectric","display_name":"High-\u03ba dielectric","score":0.4166327714920044},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.36841899156570435},{"id":"https://openalex.org/keywords/metallurgy","display_name":"Metallurgy","score":0.27754467725753784},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.27689826488494873},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.14764517545700073},{"id":"https://openalex.org/keywords/engineering-physics","display_name":"Engineering physics","score":0.12835389375686646},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.1251518726348877},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.07505545020103455},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.07258737087249756},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.0696130096912384}],"concepts":[{"id":"https://openalex.org/C546638069","wikidata":"https://www.wikidata.org/wiki/Q1119","display_name":"Hafnium","level":3,"score":0.8457801938056946},{"id":"https://openalex.org/C2984729377","wikidata":"https://www.wikidata.org/wiki/Q5757669","display_name":"High pressure","level":2,"score":0.7056097388267517},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6729893684387207},{"id":"https://openalex.org/C7366592","wikidata":"https://www.wikidata.org/wiki/Q1255620","display_name":"Dram","level":2,"score":0.6659799814224243},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.6202600002288818},{"id":"https://openalex.org/C534791751","wikidata":"https://www.wikidata.org/wiki/Q1038","display_name":"Zirconium","level":2,"score":0.5125126838684082},{"id":"https://openalex.org/C188324986","wikidata":"https://www.wikidata.org/wiki/Q7180938","display_name":"Phase boundary","level":3,"score":0.49764516949653625},{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.4289814829826355},{"id":"https://openalex.org/C44280652","wikidata":"https://www.wikidata.org/wiki/Q104837","display_name":"Phase (matter)","level":2,"score":0.4236012399196625},{"id":"https://openalex.org/C16317505","wikidata":"https://www.wikidata.org/wiki/Q132013","display_name":"High-\u03ba dielectric","level":3,"score":0.4166327714920044},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.36841899156570435},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.27754467725753784},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.27689826488494873},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.14764517545700073},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.12835389375686646},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.1251518726348877},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.07505545020103455},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.07258737087249756},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0696130096912384},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/vlsitechnologyandcir46783.2024.10631348","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vlsitechnologyandcir46783.2024.10631348","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":4,"referenced_works":["https://openalex.org/W2799357995","https://openalex.org/W3020224435","https://openalex.org/W3129744745","https://openalex.org/W3173534028"],"related_works":["https://openalex.org/W1791348549","https://openalex.org/W4234942579","https://openalex.org/W4236657633","https://openalex.org/W4245256776","https://openalex.org/W4232958457","https://openalex.org/W156653976","https://openalex.org/W2054209616","https://openalex.org/W3120961607","https://openalex.org/W2154316697","https://openalex.org/W2080120770"],"abstract_inverted_index":{"We":[0],"present":[1],"record-low":[2],"equivalent":[3],"oxide":[4],"thickness":[5],"(EOT)":[6],"of":[7,16,117,121],"2.4":[8],"\u00c5":[9],"with":[10,22,41,70],"a":[11,47,87],"remarkable":[12,33],"dielectric":[13],"constant":[14],"(K)":[15],"64":[17],"at":[18],"4.1nm-thick":[19],"hafnium-based":[20],"films":[21],"no":[23],"wake-up":[24],"characteristics.":[25],"In":[26,68],"comparison":[27],"to":[28,78,83,86,102,110],"conventional":[29],"HZO":[30],"films,":[31],"our":[32],"achievement":[34],"stems":[35],"from":[36,100,108],"the":[37,80,97,106,114,118],"high-quality":[38],"crystalline":[39],"structure":[40],"less":[42],"oxygen":[43],"vacancies":[44],"formed":[45],"by":[46,52],"low-damage":[48],"process,":[49],"as":[50],"evidenced":[51],"high-angle":[53],"annular":[54],"dark-field":[55],"scanning":[56],"transmission":[57],"electron":[58,63],"microscopy":[59],"(HAADF-STEM)":[60],"images":[61],"and":[62],"energy-loss":[64],"spectroscopy":[65],"(EELS)":[66],"analysis.":[67],"addition,":[69],"high-pressure":[71],"annealing":[72,81],"(HP":[73],"A),":[74],"we":[75],"were":[76],"able":[77],"reduce":[79],"temperature":[82,99],"450\u00b0C":[84],"leading":[85],"decrease":[88],"in":[89,105],"leakage":[90],"current":[91],"(1.":[92],"5":[93],"order).":[94],"Further,":[95],"increasing":[96],"measurement":[98],"298K":[101],"389K":[103],"results":[104],"high-K":[107],"66":[109],"70,":[111],"which":[112],"is":[113],"theoretical":[115],"limit":[116],"K":[119],"value":[120],"t-phase.":[122]},"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2025,"cited_by_count":10}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}