{"id":"https://openalex.org/W4401880255","doi":"https://doi.org/10.1109/vlsitechnologyandcir46783.2024.10631342","title":"Highly Scalable Vertical Bypass RRAM (VB-RRAM) for 3D V -NAND Memory","display_name":"Highly Scalable Vertical Bypass RRAM (VB-RRAM) for 3D V -NAND Memory","publication_year":2024,"publication_date":"2024-06-16","ids":{"openalex":"https://openalex.org/W4401880255","doi":"https://doi.org/10.1109/vlsitechnologyandcir46783.2024.10631342"},"language":"en","primary_location":{"id":"doi:10.1109/vlsitechnologyandcir46783.2024.10631342","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vlsitechnologyandcir46783.2024.10631342","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5011682415","display_name":"Geonhui Han","orcid":"https://orcid.org/0009-0002-0699-9241"},"institutions":[{"id":"https://openalex.org/I123900574","display_name":"Pohang University of Science and Technology","ror":"https://ror.org/04xysgw12","country_code":"KR","type":"education","lineage":["https://openalex.org/I123900574"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Geonhui Han","raw_affiliation_strings":["Pohang University of Science and Technology (POSTECH),Department of Material Science and Engineering,Pohang,Korea,37673"],"affiliations":[{"raw_affiliation_string":"Pohang University of Science and Technology (POSTECH),Department of Material Science and Engineering,Pohang,Korea,37673","institution_ids":["https://openalex.org/I123900574"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5003317804","display_name":"Young\u2010Dong Kim","orcid":"https://orcid.org/0000-0001-5904-4727"},"institutions":[{"id":"https://openalex.org/I123900574","display_name":"Pohang University of Science and Technology","ror":"https://ror.org/04xysgw12","country_code":"KR","type":"education","lineage":["https://openalex.org/I123900574"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Youngdong Kim","raw_affiliation_strings":["Pohang University of Science and Technology (POSTECH),Department of Material Science and Engineering,Pohang,Korea,37673"],"affiliations":[{"raw_affiliation_string":"Pohang University of Science and Technology (POSTECH),Department of Material Science and Engineering,Pohang,Korea,37673","institution_ids":["https://openalex.org/I123900574"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5078323875","display_name":"Jaeseon Kim","orcid":"https://orcid.org/0000-0002-6962-5151"},"institutions":[{"id":"https://openalex.org/I123900574","display_name":"Pohang University of Science and Technology","ror":"https://ror.org/04xysgw12","country_code":"KR","type":"education","lineage":["https://openalex.org/I123900574"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jaeseon Kim","raw_affiliation_strings":["Pohang University of Science and Technology (POSTECH),Department of Material Science and Engineering,Pohang,Korea,37673"],"affiliations":[{"raw_affiliation_string":"Pohang University of Science and Technology (POSTECH),Department of Material Science and Engineering,Pohang,Korea,37673","institution_ids":["https://openalex.org/I123900574"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5037156221","display_name":"Dongmin Kim","orcid":"https://orcid.org/0009-0004-4300-4527"},"institutions":[{"id":"https://openalex.org/I123900574","display_name":"Pohang University of Science and Technology","ror":"https://ror.org/04xysgw12","country_code":"KR","type":"education","lineage":["https://openalex.org/I123900574"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Dongmin Kim","raw_affiliation_strings":["Pohang University of Science and Technology (POSTECH),Department of Material Science and Engineering,Pohang,Korea,37673"],"affiliations":[{"raw_affiliation_string":"Pohang University of Science and Technology (POSTECH),Department of Material Science and Engineering,Pohang,Korea,37673","institution_ids":["https://openalex.org/I123900574"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5049784309","display_name":"Yoori Seo","orcid":"https://orcid.org/0009-0002-8949-9268"},"institutions":[{"id":"https://openalex.org/I123900574","display_name":"Pohang University of Science and Technology","ror":"https://ror.org/04xysgw12","country_code":"KR","type":"education","lineage":["https://openalex.org/I123900574"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Yoori Seo","raw_affiliation_strings":["Pohang University of Science and Technology (POSTECH),Department of Material Science and Engineering,Pohang,Korea,37673"],"affiliations":[{"raw_affiliation_string":"Pohang University of Science and Technology (POSTECH),Department of Material Science and Engineering,Pohang,Korea,37673","institution_ids":["https://openalex.org/I123900574"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5074262375","display_name":"Chuljun Lee","orcid":"https://orcid.org/0000-0002-7190-6980"},"institutions":[{"id":"https://openalex.org/I123900574","display_name":"Pohang University of Science and Technology","ror":"https://ror.org/04xysgw12","country_code":"KR","type":"education","lineage":["https://openalex.org/I123900574"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Chuljun Lee","raw_affiliation_strings":["Pohang University of Science and Technology (POSTECH),Department of Material Science and Engineering,Pohang,Korea,37673"],"affiliations":[{"raw_affiliation_string":"Pohang University of Science and Technology (POSTECH),Department of Material Science and Engineering,Pohang,Korea,37673","institution_ids":["https://openalex.org/I123900574"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5031539946","display_name":"Jinmyung Choi","orcid":"https://orcid.org/0000-0003-4212-8531"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jinmyung Choi","raw_affiliation_strings":["Advanced Process Development Team 2, Samsung Electronics,Gyeonggi-do,Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Advanced Process Development Team 2, Samsung Electronics,Gyeonggi-do,Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100398235","display_name":"Jinwoo Lee","orcid":"https://orcid.org/0009-0008-8830-4928"},"institutions":[{"id":"https://openalex.org/I123900574","display_name":"Pohang University of Science and Technology","ror":"https://ror.org/04xysgw12","country_code":"KR","type":"education","lineage":["https://openalex.org/I123900574"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jinwoo Lee","raw_affiliation_strings":["Pohang University of Science and Technology (POSTECH),Department of Material Science and Engineering,Pohang,Korea,37673"],"affiliations":[{"raw_affiliation_string":"Pohang University of Science and Technology (POSTECH),Department of Material Science and Engineering,Pohang,Korea,37673","institution_ids":["https://openalex.org/I123900574"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103646025","display_name":"Dong-Ho Ahn","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Dongho Ahn","raw_affiliation_strings":["Advanced Process Development Team 2, Samsung Electronics,Gyeonggi-do,Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Advanced Process Development Team 2, Samsung Electronics,Gyeonggi-do,Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112223790","display_name":"Sechung Oh","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sechung Oh","raw_affiliation_strings":["Advanced Process Development Team 2, Samsung Electronics,Gyeonggi-do,Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Advanced Process Development Team 2, Samsung Electronics,Gyeonggi-do,Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5086448529","display_name":"Donghwa Lee","orcid":"https://orcid.org/0000-0002-8956-3648"},"institutions":[{"id":"https://openalex.org/I123900574","display_name":"Pohang University of Science and Technology","ror":"https://ror.org/04xysgw12","country_code":"KR","type":"education","lineage":["https://openalex.org/I123900574"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Donghwa Lee","raw_affiliation_strings":["Pohang University of Science and Technology (POSTECH),Department of Material Science and Engineering,Pohang,Korea,37673"],"affiliations":[{"raw_affiliation_string":"Pohang University of Science and Technology (POSTECH),Department of Material Science and Engineering,Pohang,Korea,37673","institution_ids":["https://openalex.org/I123900574"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5113648241","display_name":"Hyunsang Hwang","orcid":null},"institutions":[{"id":"https://openalex.org/I123900574","display_name":"Pohang University of Science and Technology","ror":"https://ror.org/04xysgw12","country_code":"KR","type":"education","lineage":["https://openalex.org/I123900574"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hyunsang Hwang","raw_affiliation_strings":["Pohang University of Science and Technology (POSTECH),Department of Material Science and Engineering,Pohang,Korea,37673"],"affiliations":[{"raw_affiliation_string":"Pohang University of Science and Technology (POSTECH),Department of Material Science and Engineering,Pohang,Korea,37673","institution_ids":["https://openalex.org/I123900574"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":12,"corresponding_author_ids":["https://openalex.org/A5011682415"],"corresponding_institution_ids":["https://openalex.org/I123900574"],"apc_list":null,"apc_paid":null,"fwci":0.6674,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.69402642,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"2"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9936000108718872,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9929999709129333,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/resistive-random-access-memory","display_name":"Resistive random-access memory","score":0.9222964644432068},{"id":"https://openalex.org/keywords/scalability","display_name":"Scalability","score":0.5809444189071655},{"id":"https://openalex.org/keywords/nand-gate","display_name":"NAND gate","score":0.5374333262443542},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.48632368445396423},{"id":"https://openalex.org/keywords/non-volatile-memory","display_name":"Non-volatile memory","score":0.4693494737148285},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3333597183227539},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.3277246356010437},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.2507065534591675},{"id":"https://openalex.org/keywords/operating-system","display_name":"Operating system","score":0.16486266255378723},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.15350043773651123},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.1486436128616333},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.07226154208183289}],"concepts":[{"id":"https://openalex.org/C182019814","wikidata":"https://www.wikidata.org/wiki/Q1143830","display_name":"Resistive random-access memory","level":3,"score":0.9222964644432068},{"id":"https://openalex.org/C48044578","wikidata":"https://www.wikidata.org/wiki/Q727490","display_name":"Scalability","level":2,"score":0.5809444189071655},{"id":"https://openalex.org/C124296912","wikidata":"https://www.wikidata.org/wiki/Q575178","display_name":"NAND gate","level":3,"score":0.5374333262443542},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.48632368445396423},{"id":"https://openalex.org/C177950962","wikidata":"https://www.wikidata.org/wiki/Q10997658","display_name":"Non-volatile memory","level":2,"score":0.4693494737148285},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3333597183227539},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3277246356010437},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.2507065534591675},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.16486266255378723},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.15350043773651123},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.1486436128616333},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.07226154208183289},{"id":"https://openalex.org/C11413529","wikidata":"https://www.wikidata.org/wiki/Q8366","display_name":"Algorithm","level":1,"score":0.0},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/vlsitechnologyandcir46783.2024.10631342","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vlsitechnologyandcir46783.2024.10631342","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":1,"referenced_works":["https://openalex.org/W4244292714"],"related_works":["https://openalex.org/W2076211355","https://openalex.org/W2007070351","https://openalex.org/W2033811947","https://openalex.org/W2183989414","https://openalex.org/W1551399929","https://openalex.org/W2038212394","https://openalex.org/W2410132916","https://openalex.org/W2104937488","https://openalex.org/W2725431849","https://openalex.org/W2014287106"],"abstract_inverted_index":{"We":[0],"firstly":[1],"demonstrate":[2],"highly":[3],"scalable":[4],"interface":[5,25,105],"type":[6,26],"RRAM":[7,27],"based":[8],"3D":[9,23],"V-NAND":[10,99],"memory":[11],"with":[12,29,67],"WOx":[13],"resistivity":[14],"switching":[15,79,92],"(RS)":[16],"layer":[17,58,106],"and":[18,38,52,90,104],"IGZO":[19,30],"selector":[20],"transistor":[21],"(Tr).":[22],"vertical":[24],"integrated":[28],"Tr":[31,37],"(VB-RRAM),":[32],"utilizing":[33],"bypass":[34],"reading":[35],"between":[36],"RS":[39,57],"layer,":[40],"exhibits":[41],"low":[42,91],"voltage":[43],"operation":[44],"(<":[45],"5":[46],"V),":[47],"multi-bit":[48],"(4":[49],"bit)":[50],"capability,":[51],"high":[53],"uniformity":[54],"of":[55,63],"the":[56,61,69],"while":[59],"improving":[60],"limitations":[62],"on/off":[64],"ratio.":[65],"Furthermore,":[66],"scaling":[68],"channel":[70],"length":[71],"down":[72],"to":[73],"30":[74],"nm,":[75],"we":[76],"achieved":[77],"fast":[78],"speed":[80],"(~50":[81],"us),":[82],"stable":[83],"endurance":[84],"(>":[85],"10<sup":[86],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[87],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">7</sup>":[88],"cycles),":[89],"energy":[93],"consumption":[94],"(5":[95],"fJ).":[96],"Finally,":[97],"critical":[98],"issues":[100],"like":[101],"read":[102],"disturbance":[103],"were":[107],"also":[108],"evaluated.":[109]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":1}],"updated_date":"2025-12-21T01:58:51.020947","created_date":"2025-10-10T00:00:00"}