{"id":"https://openalex.org/W4401880587","doi":"https://doi.org/10.1109/vlsitechnologyandcir46783.2024.10631339","title":"A Vertical Channel-All-Around FeFET with Thermally Stable Oxide Semiconductor Achieving High \u0394I<sub>on</sub>&gt; 2\u00b5A/cell for 3D Stackable 4F<sup>2</sup> High Speed Memory","display_name":"A Vertical Channel-All-Around FeFET with Thermally Stable Oxide Semiconductor Achieving High \u0394I<sub>on</sub>&gt; 2\u00b5A/cell for 3D Stackable 4F<sup>2</sup> High Speed Memory","publication_year":2024,"publication_date":"2024-06-16","ids":{"openalex":"https://openalex.org/W4401880587","doi":"https://doi.org/10.1109/vlsitechnologyandcir46783.2024.10631339"},"language":"en","primary_location":{"id":"doi:10.1109/vlsitechnologyandcir46783.2024.10631339","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vlsitechnologyandcir46783.2024.10631339","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5066826933","display_name":"Shoichi Kabuyanagi","orcid":null},"institutions":[],"countries":[],"is_corresponding":true,"raw_author_name":"Shoichi Kabuyanagi","raw_affiliation_strings":["Institute of Memory Technology R&#x0026;D, Kioxia Corporation,Yokkaichi,Japan"],"affiliations":[{"raw_affiliation_string":"Institute of Memory Technology R&#x0026;D, Kioxia Corporation,Yokkaichi,Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5010732540","display_name":"Takamasa Hamai","orcid":"https://orcid.org/0000-0002-2209-4031"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Takamasa Hamai","raw_affiliation_strings":["Institute of Memory Technology R&#x0026;D, Kioxia Corporation,Yokkaichi,Japan"],"affiliations":[{"raw_affiliation_string":"Institute of Memory Technology R&#x0026;D, Kioxia Corporation,Yokkaichi,Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112535117","display_name":"Masayuki Murase","orcid":"https://orcid.org/0009-0008-8385-973X"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Masayuki Murase","raw_affiliation_strings":["Institute of Memory Technology R&#x0026;D, Kioxia Corporation,Yokkaichi,Japan"],"affiliations":[{"raw_affiliation_string":"Institute of Memory Technology R&#x0026;D, Kioxia Corporation,Yokkaichi,Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5052619984","display_name":"Takeru Maeda","orcid":"https://orcid.org/0000-0002-7722-7460"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Takeru Maeda","raw_affiliation_strings":["Institute of Memory Technology R&#x0026;D, Kioxia Corporation,Yokkaichi,Japan"],"affiliations":[{"raw_affiliation_string":"Institute of Memory Technology R&#x0026;D, Kioxia Corporation,Yokkaichi,Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5087391821","display_name":"Masumi Saitoh","orcid":"https://orcid.org/0000-0001-6469-7992"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Masumi Saitoh","raw_affiliation_strings":["Institute of Memory Technology R&#x0026;D, Kioxia Corporation,Yokkaichi,Japan"],"affiliations":[{"raw_affiliation_string":"Institute of Memory Technology R&#x0026;D, Kioxia Corporation,Yokkaichi,Japan","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5049630564","display_name":"Shosuke Fujii","orcid":"https://orcid.org/0000-0003-1112-2081"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Shosuke Fujii","raw_affiliation_strings":["Institute of Memory Technology R&#x0026;D, Kioxia Corporation,Yokkaichi,Japan"],"affiliations":[{"raw_affiliation_string":"Institute of Memory Technology R&#x0026;D, Kioxia Corporation,Yokkaichi,Japan","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":6,"corresponding_author_ids":["https://openalex.org/A5066826933"],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.4449,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.62702326,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":95,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"2"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9986000061035156,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.9871000051498413,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6094521880149841},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5774765014648438},{"id":"https://openalex.org/keywords/channel","display_name":"Channel (broadcasting)","score":0.5327541828155518},{"id":"https://openalex.org/keywords/semiconductor","display_name":"Semiconductor","score":0.506178081035614},{"id":"https://openalex.org/keywords/non-volatile-memory","display_name":"Non-volatile memory","score":0.5008504390716553},{"id":"https://openalex.org/keywords/random-access-memory","display_name":"Random access memory","score":0.43601012229919434},{"id":"https://openalex.org/keywords/gallium-arsenide","display_name":"Gallium arsenide","score":0.42896538972854614},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.33746960759162903},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.30874502658843994},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.19118165969848633},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.16827043890953064}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6094521880149841},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5774765014648438},{"id":"https://openalex.org/C127162648","wikidata":"https://www.wikidata.org/wiki/Q16858953","display_name":"Channel (broadcasting)","level":2,"score":0.5327541828155518},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.506178081035614},{"id":"https://openalex.org/C177950962","wikidata":"https://www.wikidata.org/wiki/Q10997658","display_name":"Non-volatile memory","level":2,"score":0.5008504390716553},{"id":"https://openalex.org/C2994168587","wikidata":"https://www.wikidata.org/wiki/Q5295","display_name":"Random access memory","level":2,"score":0.43601012229919434},{"id":"https://openalex.org/C510052550","wikidata":"https://www.wikidata.org/wiki/Q422819","display_name":"Gallium arsenide","level":2,"score":0.42896538972854614},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.33746960759162903},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.30874502658843994},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.19118165969848633},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.16827043890953064}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/vlsitechnologyandcir46783.2024.10631339","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vlsitechnologyandcir46783.2024.10631339","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.7099999785423279,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W3209704453","https://openalex.org/W2004369723","https://openalex.org/W2099729013","https://openalex.org/W2118028555","https://openalex.org/W2342993049","https://openalex.org/W2900563922","https://openalex.org/W2498827541","https://openalex.org/W2533127403","https://openalex.org/W2001102484","https://openalex.org/W2183602396"],"abstract_inverted_index":{"We":[0,74],"demonstrate,":[1],"for":[2,97],"the":[3,51,77],"first":[4],"time,":[5],"a":[6,94],"30nm-diameter":[7],"vertical":[8],"Channel-All-Around":[9],"(CAA)":[10],"ferroelectric":[11],"FET":[12],"(FeFET)":[13],"with":[14,62],"TiO<inf":[15,66],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[16,42,56,67],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</inf>":[17,68],"channel,":[18,39],"aiming":[19],"at":[20],"4F2":[21],"high":[22,40,99,102],"speed":[23,103],"memory":[24,72],"application.":[25],"Thanks":[26],"to":[27],"Gate-Source/Drain":[28],"overlap":[29],"of":[30,36,79],"CAA":[31,80],"structure":[32],"and":[33,44,89,101],"interface-layer-free":[34],"nature":[35],"oxide":[37,91],"semiconductor":[38],"\u0394I<inf":[41],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">on</inf>":[43],"stable":[45,64],"endurance":[46],"are":[47],"simultaneously":[48],"achieved":[49],"in":[50],"smallest":[52],"footprint":[53],"ever":[54],"(707nm<sup":[55],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sup>).":[57],"Low":[58],"aspect":[59],"ratio":[60],"FeFET":[61,81],"thermally":[63],"crystallized":[65],"channel":[69],"facilitates":[70],"multiple":[71],"stacking.":[73],"also":[75],"show":[76],"scalability":[78],"without":[82],"performance":[83],"degradation":[84],"by":[85],"contact":[86],"electrode":[87],"optimization":[88],"spacer":[90],"engineering,":[92],"providing":[93],"new":[95],"path":[96],"future":[98],"density":[100],"memory.":[104]},"counts_by_year":[{"year":2025,"cited_by_count":2}],"updated_date":"2025-12-26T23:08:49.675405","created_date":"2025-10-10T00:00:00"}