{"id":"https://openalex.org/W4286571752","doi":"https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830386","title":"Low-Noise Multi-Gate Pixel Transistor for Sub-Micron Pixel CMOS Image Sensors","display_name":"Low-Noise Multi-Gate Pixel Transistor for Sub-Micron Pixel CMOS Image Sensors","publication_year":2022,"publication_date":"2022-06-12","ids":{"openalex":"https://openalex.org/W4286571752","doi":"https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830386"},"language":"en","primary_location":{"id":"doi:10.1109/vlsitechnologyandcir46769.2022.9830386","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830386","pdf_url":null,"source":{"id":"https://openalex.org/S4363605407","display_name":"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5044022352","display_name":"Shota Kitamura","orcid":null},"institutions":[{"id":"https://openalex.org/I1304132090","display_name":"Sony (Taiwan)","ror":"https://ror.org/0214y7014","country_code":"TW","type":"company","lineage":["https://openalex.org/I1304132090","https://openalex.org/I4210143797"]}],"countries":["TW"],"is_corresponding":true,"raw_author_name":"Shota Kitamura","raw_affiliation_strings":["Sony Semiconductor Solutions Corp.,Atsugi,Japan","Sony Semiconductor Solutions Corp., Atsugi, Japan"],"affiliations":[{"raw_affiliation_string":"Sony Semiconductor Solutions Corp.,Atsugi,Japan","institution_ids":["https://openalex.org/I1304132090"]},{"raw_affiliation_string":"Sony Semiconductor Solutions Corp., Atsugi, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5079711113","display_name":"N. Kimizuka","orcid":null},"institutions":[{"id":"https://openalex.org/I1304132090","display_name":"Sony (Taiwan)","ror":"https://ror.org/0214y7014","country_code":"TW","type":"company","lineage":["https://openalex.org/I1304132090","https://openalex.org/I4210143797"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Naohiko Kimizuka","raw_affiliation_strings":["Sony Semiconductor Solutions Corp.,Atsugi,Japan","Sony Semiconductor Solutions Corp., Atsugi, Japan"],"affiliations":[{"raw_affiliation_string":"Sony Semiconductor Solutions Corp.,Atsugi,Japan","institution_ids":["https://openalex.org/I1304132090"]},{"raw_affiliation_string":"Sony Semiconductor Solutions Corp., Atsugi, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5049506929","display_name":"Akiko Honjo","orcid":null},"institutions":[{"id":"https://openalex.org/I1304132090","display_name":"Sony (Taiwan)","ror":"https://ror.org/0214y7014","country_code":"TW","type":"company","lineage":["https://openalex.org/I1304132090","https://openalex.org/I4210143797"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Akiko Honjo","raw_affiliation_strings":["Sony Semiconductor Solutions Corp.,Atsugi,Japan","Sony Semiconductor Solutions Corp., Atsugi, Japan"],"affiliations":[{"raw_affiliation_string":"Sony Semiconductor Solutions Corp.,Atsugi,Japan","institution_ids":["https://openalex.org/I1304132090"]},{"raw_affiliation_string":"Sony Semiconductor Solutions Corp., Atsugi, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5046948878","display_name":"Koichi Baba","orcid":null},"institutions":[{"id":"https://openalex.org/I1304132090","display_name":"Sony (Taiwan)","ror":"https://ror.org/0214y7014","country_code":"TW","type":"company","lineage":["https://openalex.org/I1304132090","https://openalex.org/I4210143797"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Koichi Baba","raw_affiliation_strings":["Sony Semiconductor Solutions Corp.,Atsugi,Japan","Sony Semiconductor Solutions Corp., Atsugi, Japan"],"affiliations":[{"raw_affiliation_string":"Sony Semiconductor Solutions Corp.,Atsugi,Japan","institution_ids":["https://openalex.org/I1304132090"]},{"raw_affiliation_string":"Sony Semiconductor Solutions Corp., Atsugi, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5037248813","display_name":"Toshihiro Kurobe","orcid":null},"institutions":[{"id":"https://openalex.org/I1304132090","display_name":"Sony (Taiwan)","ror":"https://ror.org/0214y7014","country_code":"TW","type":"company","lineage":["https://openalex.org/I1304132090","https://openalex.org/I4210143797"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Toshihiro Kurobe","raw_affiliation_strings":["Sony Semiconductor Solutions Corp.,Atsugi,Japan","Sony Semiconductor Solutions Corp., Atsugi, Japan"],"affiliations":[{"raw_affiliation_string":"Sony Semiconductor Solutions Corp.,Atsugi,Japan","institution_ids":["https://openalex.org/I1304132090"]},{"raw_affiliation_string":"Sony Semiconductor Solutions Corp., Atsugi, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5004905706","display_name":"Hideomi Kumano","orcid":null},"institutions":[{"id":"https://openalex.org/I1304132090","display_name":"Sony (Taiwan)","ror":"https://ror.org/0214y7014","country_code":"TW","type":"company","lineage":["https://openalex.org/I1304132090","https://openalex.org/I4210143797"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Hideomi Kumano","raw_affiliation_strings":["Sony Semiconductor Solutions Corp.,Atsugi,Japan","Sony Semiconductor Solutions Corp., Atsugi, Japan"],"affiliations":[{"raw_affiliation_string":"Sony Semiconductor Solutions Corp.,Atsugi,Japan","institution_ids":["https://openalex.org/I1304132090"]},{"raw_affiliation_string":"Sony Semiconductor Solutions Corp., Atsugi, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5085199321","display_name":"Takuya Toyofuku","orcid":null},"institutions":[{"id":"https://openalex.org/I1304132090","display_name":"Sony (Taiwan)","ror":"https://ror.org/0214y7014","country_code":"TW","type":"company","lineage":["https://openalex.org/I1304132090","https://openalex.org/I4210143797"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Takuya Toyofuku","raw_affiliation_strings":["Sony Semiconductor Solutions Corp.,Atsugi,Japan","Sony Semiconductor Solutions Corp., Atsugi, Japan"],"affiliations":[{"raw_affiliation_string":"Sony Semiconductor Solutions Corp.,Atsugi,Japan","institution_ids":["https://openalex.org/I1304132090"]},{"raw_affiliation_string":"Sony Semiconductor Solutions Corp., Atsugi, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102103320","display_name":"Kouhei Takeuchi","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Kouhei Takeuchi","raw_affiliation_strings":["Sony Semiconductor Manufacturing Corp.,Nagasaki,Japan","Sony Semiconductor Manufacturing Corp., Nagasaki, Japan"],"affiliations":[{"raw_affiliation_string":"Sony Semiconductor Manufacturing Corp.,Nagasaki,Japan","institution_ids":[]},{"raw_affiliation_string":"Sony Semiconductor Manufacturing Corp., Nagasaki, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110927148","display_name":"S. Nishimura","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Shota Nishimura","raw_affiliation_strings":["Sony Semiconductor Manufacturing Corp.,Nagasaki,Japan","Sony Semiconductor Manufacturing Corp., Nagasaki, Japan"],"affiliations":[{"raw_affiliation_string":"Sony Semiconductor Manufacturing Corp.,Nagasaki,Japan","institution_ids":[]},{"raw_affiliation_string":"Sony Semiconductor Manufacturing Corp., Nagasaki, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102833745","display_name":"Akihiko Kato","orcid":"https://orcid.org/0000-0001-5556-3845"},"institutions":[{"id":"https://openalex.org/I1304132090","display_name":"Sony (Taiwan)","ror":"https://ror.org/0214y7014","country_code":"TW","type":"company","lineage":["https://openalex.org/I1304132090","https://openalex.org/I4210143797"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Akihiko Kato","raw_affiliation_strings":["Sony Semiconductor Solutions Corp.,Atsugi,Japan","Sony Semiconductor Solutions Corp., Atsugi, Japan"],"affiliations":[{"raw_affiliation_string":"Sony Semiconductor Solutions Corp.,Atsugi,Japan","institution_ids":["https://openalex.org/I1304132090"]},{"raw_affiliation_string":"Sony Semiconductor Solutions Corp., Atsugi, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102331567","display_name":"Tomoyuki Hirano","orcid":null},"institutions":[{"id":"https://openalex.org/I1304132090","display_name":"Sony (Taiwan)","ror":"https://ror.org/0214y7014","country_code":"TW","type":"company","lineage":["https://openalex.org/I1304132090","https://openalex.org/I4210143797"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Tomoyuki Hirano","raw_affiliation_strings":["Sony Semiconductor Solutions Corp.,Atsugi,Japan","Sony Semiconductor Solutions Corp., Atsugi, Japan"],"affiliations":[{"raw_affiliation_string":"Sony Semiconductor Solutions Corp.,Atsugi,Japan","institution_ids":["https://openalex.org/I1304132090"]},{"raw_affiliation_string":"Sony Semiconductor Solutions Corp., Atsugi, Japan","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5048431820","display_name":"Yusuke Oike","orcid":"https://orcid.org/0000-0002-6647-1986"},"institutions":[{"id":"https://openalex.org/I1304132090","display_name":"Sony (Taiwan)","ror":"https://ror.org/0214y7014","country_code":"TW","type":"company","lineage":["https://openalex.org/I1304132090","https://openalex.org/I4210143797"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Yusuke Oike","raw_affiliation_strings":["Sony Semiconductor Solutions Corp.,Atsugi,Japan","Sony Semiconductor Solutions Corp., Atsugi, Japan"],"affiliations":[{"raw_affiliation_string":"Sony Semiconductor Solutions Corp.,Atsugi,Japan","institution_ids":["https://openalex.org/I1304132090"]},{"raw_affiliation_string":"Sony Semiconductor Solutions Corp., Atsugi, Japan","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":12,"corresponding_author_ids":["https://openalex.org/A5044022352"],"corresponding_institution_ids":["https://openalex.org/I1304132090"],"apc_list":null,"apc_paid":null,"fwci":0.6448,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.5563634,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":94,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"347","last_page":"348"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11992","display_name":"CCD and CMOS Imaging Sensors","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11992","display_name":"CCD and CMOS Imaging Sensors","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9865000247955322,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9843000173568726,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/pixel","display_name":"Pixel","score":0.6831867098808289},{"id":"https://openalex.org/keywords/shallow-trench-isolation","display_name":"Shallow trench isolation","score":0.6790438294410706},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.6682989001274109},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.5799780488014221},{"id":"https://openalex.org/keywords/transconductance","display_name":"Transconductance","score":0.5790122151374817},{"id":"https://openalex.org/keywords/image-sensor","display_name":"Image sensor","score":0.4667988419532776},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4147011637687683},{"id":"https://openalex.org/keywords/noise","display_name":"Noise (video)","score":0.413386732339859},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.41213175654411316},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.40238937735557556},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.33160847425460815},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3295002281665802},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3081815242767334},{"id":"https://openalex.org/keywords/trench","display_name":"Trench","score":0.27025073766708374},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.18121978640556335},{"id":"https://openalex.org/keywords/artificial-intelligence","display_name":"Artificial intelligence","score":0.14899098873138428},{"id":"https://openalex.org/keywords/image","display_name":"Image (mathematics)","score":0.12580877542495728},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.0717359185218811}],"concepts":[{"id":"https://openalex.org/C160633673","wikidata":"https://www.wikidata.org/wiki/Q355198","display_name":"Pixel","level":2,"score":0.6831867098808289},{"id":"https://openalex.org/C105066941","wikidata":"https://www.wikidata.org/wiki/Q1424524","display_name":"Shallow trench isolation","level":4,"score":0.6790438294410706},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6682989001274109},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5799780488014221},{"id":"https://openalex.org/C2779283907","wikidata":"https://www.wikidata.org/wiki/Q1632964","display_name":"Transconductance","level":4,"score":0.5790122151374817},{"id":"https://openalex.org/C76935873","wikidata":"https://www.wikidata.org/wiki/Q209121","display_name":"Image sensor","level":2,"score":0.4667988419532776},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4147011637687683},{"id":"https://openalex.org/C99498987","wikidata":"https://www.wikidata.org/wiki/Q2210247","display_name":"Noise (video)","level":3,"score":0.413386732339859},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.41213175654411316},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.40238937735557556},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.33160847425460815},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3295002281665802},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3081815242767334},{"id":"https://openalex.org/C155310634","wikidata":"https://www.wikidata.org/wiki/Q1852785","display_name":"Trench","level":3,"score":0.27025073766708374},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.18121978640556335},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.14899098873138428},{"id":"https://openalex.org/C115961682","wikidata":"https://www.wikidata.org/wiki/Q860623","display_name":"Image (mathematics)","level":2,"score":0.12580877542495728},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.0717359185218811},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/vlsitechnologyandcir46769.2022.9830386","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830386","pdf_url":null,"source":{"id":"https://openalex.org/S4363605407","display_name":"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":1,"referenced_works":["https://openalex.org/W658393943"],"related_works":["https://openalex.org/W2022123780","https://openalex.org/W2349576212","https://openalex.org/W1981776476","https://openalex.org/W2352535872","https://openalex.org/W4286571729","https://openalex.org/W1590693222","https://openalex.org/W2382967348","https://openalex.org/W2334823507","https://openalex.org/W2107073676","https://openalex.org/W2099173830"],"abstract_inverted_index":{"As":[0],"the":[1,62,65,100],"pixel":[2,25,29,40,59,105],"size":[3],"of":[4,42],"CMOS":[5],"image":[6,97],"sensors":[7],"(CIS)":[8],"is":[9],"rapidly":[10],"decreasing":[11],"to":[12,16,56],"sub-micron":[13,28],"pixels":[14,92],"due":[15],"strong":[17],"demand":[18],"from":[19],"mobile":[20],"applications,":[21],"a":[22,49,57,95],"low-noise":[23],"multi-gate":[24,104],"transistor":[26,60],"for":[27,39,99],"CIS":[30,47,89],"has":[31,35,72,82],"been":[32,36,73,83],"proposed.":[33],"It":[34],"fully":[37],"customized":[38],"transistors":[41],"source":[43],"follower":[44],"amplifiers":[45],"in":[46],"by":[48,75,85],"shallow":[50],"trench":[51],"isolation":[52],"full-etching":[53],"process.":[54],"Compared":[55],"planar-type":[58],"with":[61,90],"same":[63],"footprint,":[64],"random":[66],"telegraph":[67],"signal":[68],"and":[69,77],"1/f":[70],"noise":[71],"decreased":[74],"91%":[76],"48%,":[78],"respectively.":[79],"The":[80],"transconductance":[81],"improved":[84],"43%.":[86],"A":[87],"prototype":[88],"0.7\u03bcm":[91],"successfully":[93],"presented":[94],"full":[96],"capture":[98],"first":[101],"time":[102],"using":[103],"transistors.":[106]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2024,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}