{"id":"https://openalex.org/W4286571845","doi":"https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830172","title":"Asymmetric Double-Gate Ferroelectric FET to Decouple the Tradeoff Between Thickness Scaling and Memory Window","display_name":"Asymmetric Double-Gate Ferroelectric FET to Decouple the Tradeoff Between Thickness Scaling and Memory Window","publication_year":2022,"publication_date":"2022-06-12","ids":{"openalex":"https://openalex.org/W4286571845","doi":"https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830172"},"language":"en","primary_location":{"id":"doi:10.1109/vlsitechnologyandcir46769.2022.9830172","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830172","pdf_url":null,"source":{"id":"https://openalex.org/S4363605407","display_name":"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5010749469","display_name":"Zhouhang Jiang","orcid":"https://orcid.org/0000-0001-6039-920X"},"institutions":[{"id":"https://openalex.org/I155173764","display_name":"Rochester Institute of Technology","ror":"https://ror.org/00v4yb702","country_code":"US","type":"education","lineage":["https://openalex.org/I155173764"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Zhouhang Jiang","raw_affiliation_strings":["Rochester Institute of Technology"],"affiliations":[{"raw_affiliation_string":"Rochester Institute of Technology","institution_ids":["https://openalex.org/I155173764"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5042306977","display_name":"Yi Xiao","orcid":"https://orcid.org/0000-0001-5228-9916"},"institutions":[{"id":"https://openalex.org/I130769515","display_name":"Pennsylvania State University","ror":"https://ror.org/04p491231","country_code":"US","type":"education","lineage":["https://openalex.org/I130769515"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Yi Xiao","raw_affiliation_strings":["Pennsylvania State University"],"affiliations":[{"raw_affiliation_string":"Pennsylvania State University","institution_ids":["https://openalex.org/I130769515"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5083027686","display_name":"Swetaki Chatterjee","orcid":"https://orcid.org/0000-0002-2550-9626"},"institutions":[{"id":"https://openalex.org/I100066346","display_name":"University of Stuttgart","ror":"https://ror.org/04vnq7t77","country_code":"DE","type":"education","lineage":["https://openalex.org/I100066346"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Swetaki Chatterjee","raw_affiliation_strings":["University of Stuttgart"],"affiliations":[{"raw_affiliation_string":"University of Stuttgart","institution_ids":["https://openalex.org/I100066346"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5013521911","display_name":"Halid Mulaosmanovic","orcid":"https://orcid.org/0000-0001-9524-5112"},"institutions":[{"id":"https://openalex.org/I4210117926","display_name":"GlobalFoundries (Cayman Islands)","ror":"https://ror.org/02f7yzh91","country_code":"KY","type":"company","lineage":["https://openalex.org/I35662394","https://openalex.org/I4210117926"]}],"countries":["KY"],"is_corresponding":false,"raw_author_name":"Halid Mulaosmanovic","raw_affiliation_strings":["GlobalFoundries Fab1 LLC &amp; Co. KG"],"affiliations":[{"raw_affiliation_string":"GlobalFoundries Fab1 LLC &amp; Co. KG","institution_ids":["https://openalex.org/I4210117926"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5031018863","display_name":"Stefan Duenkel","orcid":null},"institutions":[{"id":"https://openalex.org/I4210117926","display_name":"GlobalFoundries (Cayman Islands)","ror":"https://ror.org/02f7yzh91","country_code":"KY","type":"company","lineage":["https://openalex.org/I35662394","https://openalex.org/I4210117926"]}],"countries":["KY"],"is_corresponding":false,"raw_author_name":"Stefan Duenkel","raw_affiliation_strings":["GlobalFoundries Fab1 LLC &amp; Co. KG"],"affiliations":[{"raw_affiliation_string":"GlobalFoundries Fab1 LLC &amp; Co. KG","institution_ids":["https://openalex.org/I4210117926"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5029775547","display_name":"Steven Soss","orcid":"https://orcid.org/0000-0001-6433-6230"},"institutions":[{"id":"https://openalex.org/I4210117926","display_name":"GlobalFoundries (Cayman Islands)","ror":"https://ror.org/02f7yzh91","country_code":"KY","type":"company","lineage":["https://openalex.org/I35662394","https://openalex.org/I4210117926"]}],"countries":["KY"],"is_corresponding":false,"raw_author_name":"Steven Soss","raw_affiliation_strings":["GlobalFoundries Fab1 LLC &amp; Co. KG"],"affiliations":[{"raw_affiliation_string":"GlobalFoundries Fab1 LLC &amp; Co. KG","institution_ids":["https://openalex.org/I4210117926"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113965605","display_name":"Sven Beyer","orcid":null},"institutions":[{"id":"https://openalex.org/I4210117926","display_name":"GlobalFoundries (Cayman Islands)","ror":"https://ror.org/02f7yzh91","country_code":"KY","type":"company","lineage":["https://openalex.org/I35662394","https://openalex.org/I4210117926"]}],"countries":["KY"],"is_corresponding":false,"raw_author_name":"Sven Beyer","raw_affiliation_strings":["GlobalFoundries Fab1 LLC &amp; Co. KG"],"affiliations":[{"raw_affiliation_string":"GlobalFoundries Fab1 LLC &amp; Co. KG","institution_ids":["https://openalex.org/I4210117926"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5105554115","display_name":"Rajiv Joshi","orcid":"https://orcid.org/0009-0007-7486-1531"},"institutions":[{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Rajiv Joshi","raw_affiliation_strings":["IBM Thomas J. Watson Research Center"],"affiliations":[{"raw_affiliation_string":"IBM Thomas J. Watson Research Center","institution_ids":["https://openalex.org/I4210114115"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5077371510","display_name":"Yogesh Singh Chauhan","orcid":"https://orcid.org/0000-0002-3356-8917"},"institutions":[{"id":"https://openalex.org/I94234084","display_name":"Indian Institute of Technology Kanpur","ror":"https://ror.org/05pjsgx75","country_code":"IN","type":"education","lineage":["https://openalex.org/I94234084"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Yogesh S. Chauhan","raw_affiliation_strings":["IIT Kanpur"],"affiliations":[{"raw_affiliation_string":"IIT Kanpur","institution_ids":["https://openalex.org/I94234084"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Hussam Amrouch","orcid":null},"institutions":[{"id":"https://openalex.org/I100066346","display_name":"University of Stuttgart","ror":"https://ror.org/04vnq7t77","country_code":"DE","type":"education","lineage":["https://openalex.org/I100066346"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Hussam Amrouch","raw_affiliation_strings":["University of Stuttgart"],"affiliations":[{"raw_affiliation_string":"University of Stuttgart","institution_ids":["https://openalex.org/I100066346"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101919131","display_name":"Vijaykrishnan Narayanan","orcid":"https://orcid.org/0000-0001-6266-6068"},"institutions":[{"id":"https://openalex.org/I130769515","display_name":"Pennsylvania State University","ror":"https://ror.org/04p491231","country_code":"US","type":"education","lineage":["https://openalex.org/I130769515"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Vijaykrishnan Narayanan","raw_affiliation_strings":["Pennsylvania State University"],"affiliations":[{"raw_affiliation_string":"Pennsylvania State University","institution_ids":["https://openalex.org/I130769515"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5075633314","display_name":"Kai Ni","orcid":"https://orcid.org/0000-0002-3628-3431"},"institutions":[{"id":"https://openalex.org/I155173764","display_name":"Rochester Institute of Technology","ror":"https://ror.org/00v4yb702","country_code":"US","type":"education","lineage":["https://openalex.org/I155173764"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Kai Ni","raw_affiliation_strings":["Rochester Institute of Technology"],"affiliations":[{"raw_affiliation_string":"Rochester Institute of Technology","institution_ids":["https://openalex.org/I155173764"]}]}],"institutions":[],"countries_distinct_count":4,"institutions_distinct_count":12,"corresponding_author_ids":["https://openalex.org/A5010749469"],"corresponding_institution_ids":["https://openalex.org/I155173764"],"apc_list":null,"apc_paid":null,"fwci":7.997,"has_fulltext":false,"cited_by_count":25,"citation_normalized_percentile":{"value":0.98844534,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":97,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"395","last_page":"396"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9879000186920166,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10338","display_name":"Advanced Sensor and Energy Harvesting Materials","score":0.9732000231742859,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/ferroelectricity","display_name":"Ferroelectricity","score":0.7656320333480835},{"id":"https://openalex.org/keywords/scaling","display_name":"Scaling","score":0.6427609920501709},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.5255167484283447},{"id":"https://openalex.org/keywords/reading","display_name":"Reading (process)","score":0.5131316781044006},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.44082844257354736},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.43986788392066956},{"id":"https://openalex.org/keywords/gate-dielectric","display_name":"Gate dielectric","score":0.4352867603302002},{"id":"https://openalex.org/keywords/coupling","display_name":"Coupling (piping)","score":0.4152565896511078},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.4124506711959839},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.3938782811164856},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.3696148097515106},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.35715317726135254},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3530704379081726},{"id":"https://openalex.org/keywords/algorithm","display_name":"Algorithm","score":0.3266373574733734},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.3210156261920929},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.2940654754638672},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.15040826797485352},{"id":"https://openalex.org/keywords/quantum-mechanics","display_name":"Quantum mechanics","score":0.14927443861961365},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1389009952545166},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.09707367420196533}],"concepts":[{"id":"https://openalex.org/C79090758","wikidata":"https://www.wikidata.org/wiki/Q1045739","display_name":"Ferroelectricity","level":3,"score":0.7656320333480835},{"id":"https://openalex.org/C99844830","wikidata":"https://www.wikidata.org/wiki/Q102441924","display_name":"Scaling","level":2,"score":0.6427609920501709},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.5255167484283447},{"id":"https://openalex.org/C554936623","wikidata":"https://www.wikidata.org/wiki/Q199657","display_name":"Reading (process)","level":2,"score":0.5131316781044006},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.44082844257354736},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.43986788392066956},{"id":"https://openalex.org/C166972891","wikidata":"https://www.wikidata.org/wiki/Q5527011","display_name":"Gate dielectric","level":4,"score":0.4352867603302002},{"id":"https://openalex.org/C131584629","wikidata":"https://www.wikidata.org/wiki/Q4308705","display_name":"Coupling (piping)","level":2,"score":0.4152565896511078},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.4124506711959839},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3938782811164856},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.3696148097515106},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.35715317726135254},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3530704379081726},{"id":"https://openalex.org/C11413529","wikidata":"https://www.wikidata.org/wiki/Q8366","display_name":"Algorithm","level":1,"score":0.3266373574733734},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.3210156261920929},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.2940654754638672},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.15040826797485352},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.14927443861961365},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1389009952545166},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.09707367420196533},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0},{"id":"https://openalex.org/C199539241","wikidata":"https://www.wikidata.org/wiki/Q7748","display_name":"Law","level":1,"score":0.0},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.0},{"id":"https://openalex.org/C17744445","wikidata":"https://www.wikidata.org/wiki/Q36442","display_name":"Political science","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/vlsitechnologyandcir46769.2022.9830172","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830172","pdf_url":null,"source":{"id":"https://openalex.org/S4363605407","display_name":"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.6899999976158142,"id":"https://metadata.un.org/sdg/4","display_name":"Quality Education"}],"awards":[],"funders":[{"id":"https://openalex.org/F4320306084","display_name":"U.S. Department of Energy","ror":"https://ror.org/01bj3aw27"},{"id":"https://openalex.org/F4320332359","display_name":"Office of Science","ror":"https://ror.org/00mmn6b08"},{"id":"https://openalex.org/F4320337480","display_name":"Basic Energy Sciences","ror":"https://ror.org/05mg91w61"},{"id":"https://openalex.org/F4320338281","display_name":"Army Research Office","ror":"https://ror.org/05epdh915"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2795319754","https://openalex.org/W2248971758","https://openalex.org/W2332612935","https://openalex.org/W2410108108","https://openalex.org/W2129539607","https://openalex.org/W4327948915","https://openalex.org/W1974020084","https://openalex.org/W2079374728","https://openalex.org/W2895652696","https://openalex.org/W4327744209"],"abstract_inverted_index":{"In":[0],"this":[1],"work,":[2],"we":[3],"applied":[4],"the":[5,11,53,61,77,84],"asymmetric":[6],"double-gate":[7,69],"concept":[8],"to":[9,57],"decouple":[10],"tradeoff":[12],"between":[13,60],"ferroelectric":[14,29],"(FE)":[15],"thickness":[16],"(t":[17],"<inf":[18,93,110],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[19,94,111],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">FE</inf>":[20,95,112],")":[21],"scaling":[22],"and":[23,38,41,74,97],"memory":[24],"window":[25],"(MW)":[26],"reduction":[27],"in":[28],"FET":[30],"(FeFET).":[31],"We":[32],"demonstrate":[33],"that:":[34],"i)":[35],"separating":[36],"read":[37,54],"write":[39,99],"gates":[40],"adopting":[42],"a":[43,65,90,105],"thick":[44],"non-FE":[45],"dielectric":[46],"gate":[47],"used":[48],"for":[49,68,89,108],"reading":[50],"can":[51],"amplify":[52],"MW":[55],"due":[56],"electrostatic":[58],"coupling":[59],"two":[62],"gates;":[63],"ii)":[64],"compact":[66],"model":[67],"FeFET":[70],"has":[71],"been":[72],"demonstrated":[73],"calibrated":[75,85],"with":[76,83],"experimentally":[78],"measured":[79],"switching":[80],"dynamics;":[81],"iii)":[82],"model,":[86],"design":[87],"space":[88],"scaled":[91],"t":[92,109],"(3nm)":[96],"logic-compatible":[98],"voltage":[100],"(1.8V)":[101],"is":[102],"identified,":[103],"offering":[104],"possible":[106],"option":[107],"scaling.":[113]},"counts_by_year":[{"year":2025,"cited_by_count":8},{"year":2024,"cited_by_count":5},{"year":2023,"cited_by_count":7},{"year":2022,"cited_by_count":5}],"updated_date":"2026-04-16T08:26:57.006410","created_date":"2025-10-10T00:00:00"}