{"id":"https://openalex.org/W4286571766","doi":"https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830156","title":"Ultra-Fast Operation of BEOL-Compatible Atomic-Layer-Deposited In<sub>2</sub>O<sub>3</sub> Fe-FETs: Achieving Memory Performance Enhancement with Memory Window of 2.5 V and High Endurance &gt; 10<sup>9</sup> Cycles without V<sub>T</sub> Drift Penalty","display_name":"Ultra-Fast Operation of BEOL-Compatible Atomic-Layer-Deposited In<sub>2</sub>O<sub>3</sub> Fe-FETs: Achieving Memory Performance Enhancement with Memory Window of 2.5 V and High Endurance &gt; 10<sup>9</sup> Cycles without V<sub>T</sub> Drift Penalty","publication_year":2022,"publication_date":"2022-06-12","ids":{"openalex":"https://openalex.org/W4286571766","doi":"https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830156"},"language":"en","primary_location":{"id":"doi:10.1109/vlsitechnologyandcir46769.2022.9830156","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830156","pdf_url":null,"source":{"id":"https://openalex.org/S4363605407","display_name":"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5087982402","display_name":"Zehao Lin","orcid":"https://orcid.org/0000-0002-5308-1065"},"institutions":[{"id":"https://openalex.org/I219193219","display_name":"Purdue University West Lafayette","ror":"https://ror.org/02dqehb95","country_code":"US","type":"education","lineage":["https://openalex.org/I219193219"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Zehao Lin","raw_affiliation_strings":["Purdue University,Elmore Family School of Electrical and Computer Engineering,West Lafayette,IN,U.S.A.,47907"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Purdue University,Elmore Family School of Electrical and Computer Engineering,West Lafayette,IN,U.S.A.,47907","institution_ids":["https://openalex.org/I219193219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5059106002","display_name":"Mengwei Si","orcid":"https://orcid.org/0000-0003-0397-7741"},"institutions":[{"id":"https://openalex.org/I219193219","display_name":"Purdue University West Lafayette","ror":"https://ror.org/02dqehb95","country_code":"US","type":"education","lineage":["https://openalex.org/I219193219"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Mengwei Si","raw_affiliation_strings":["Purdue University,Elmore Family School of Electrical and Computer Engineering,West Lafayette,IN,U.S.A.,47907"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Purdue University,Elmore Family School of Electrical and Computer Engineering,West Lafayette,IN,U.S.A.,47907","institution_ids":["https://openalex.org/I219193219"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5063222844","display_name":"Peide D. Ye","orcid":"https://orcid.org/0000-0001-8466-9745"},"institutions":[{"id":"https://openalex.org/I219193219","display_name":"Purdue University West Lafayette","ror":"https://ror.org/02dqehb95","country_code":"US","type":"education","lineage":["https://openalex.org/I219193219"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Peide D. Ye","raw_affiliation_strings":["Purdue University,Elmore Family School of Electrical and Computer Engineering,West Lafayette,IN,U.S.A.,47907"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Purdue University,Elmore Family School of Electrical and Computer Engineering,West Lafayette,IN,U.S.A.,47907","institution_ids":["https://openalex.org/I219193219"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":4.7842,"has_fulltext":false,"cited_by_count":16,"citation_normalized_percentile":{"value":0.96970587,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":90,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"2"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9958000183105469,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.992900013923645,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.41523921489715576},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.40799733996391296},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.36282235383987427},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3556166887283325}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.41523921489715576},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.40799733996391296},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.36282235383987427},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3556166887283325}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/vlsitechnologyandcir46769.2022.9830156","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830156","pdf_url":null,"source":{"id":"https://openalex.org/S4363605407","display_name":"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":7,"referenced_works":["https://openalex.org/W2334220755","https://openalex.org/W2800070060","https://openalex.org/W2912075450","https://openalex.org/W2968830334","https://openalex.org/W3020220880","https://openalex.org/W3158554967","https://openalex.org/W3164346087"],"related_works":["https://openalex.org/W2899084033","https://openalex.org/W2902546961","https://openalex.org/W2058676402","https://openalex.org/W2399397734","https://openalex.org/W2329285141","https://openalex.org/W2292675962","https://openalex.org/W2139871202","https://openalex.org/W2059363835","https://openalex.org/W2769410768","https://openalex.org/W4296250578"],"abstract_inverted_index":{"In":[0,18],"this":[1],"work,":[2],"we":[3],"report":[4],"the":[5],"ultra-fast":[6,54,136],"operation":[7,71,137],"of":[8,80,99],"back-end-of-line":[9],"(BEOL)":[10],"compatible":[11],"Fe-FETs":[12,125],"with":[13,39],"atomic":[14],"layer":[15],"deposition":[16],"(ALD)":[17],"<inf":[19,23,28,43,114],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[20,24,29,44,109,115],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</inf>":[21,30],"O":[22],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">3</inf>":[25],"and":[26,35,57,102],"HfZrO":[27],"(HZO)":[31],"as":[32],"channel":[33,40],"semiconductor":[34,124],"ferroelectric":[36],"gate":[37],"insulator":[38],"length":[41],"(L":[42],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">ch</inf>":[45],")":[46],"scaled":[47],"down":[48,72],"to":[49,73],"7":[50],"nm,":[51],"enabled":[52],"by":[53,77],"I-V":[55,59],"(UFIV)":[56],"pulse":[58],"measurements.":[60],"It":[61],"is":[62,92],"found":[63],"that":[64,122],"device":[65],"memory":[66,90,97],"characteristics":[67],"benefit":[68],"from":[69],"fast":[70,85],"10":[74,107],"ns":[75],"level,":[76],"a":[78,95,103],"suppression":[79],"trapping":[81],"effect":[82],"while":[83],"maintaining":[84],"FE":[86],"switching":[87],"speed.":[88,138],"High":[89],"performance":[91],"achieved,":[93],"exhibiting":[94],"wide":[96],"window":[98],"2.5":[100],"V":[101,113],"high":[104],"endurance":[105],"exceeding":[106],"<sup":[108],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">9</sup>":[110],"cycles":[111],"without":[112],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">T</inf>":[116],"drift":[117],"penalty.":[118],"These":[119],"results":[120],"suggest":[121],"oxide":[123],"are":[126],"promising":[127],"toward":[128],"monolithic":[129],"3D":[130],"integration":[131],"for":[132],"in-memory":[133],"computing":[134],"at":[135]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":6},{"year":2024,"cited_by_count":5},{"year":2023,"cited_by_count":3},{"year":2022,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}