{"id":"https://openalex.org/W4286571853","doi":"https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830149","title":"High speed (1ns) and low voltage (1.5V) demonstration of 8Kb SOT-MRAM array","display_name":"High speed (1ns) and low voltage (1.5V) demonstration of 8Kb SOT-MRAM array","publication_year":2022,"publication_date":"2022-06-12","ids":{"openalex":"https://openalex.org/W4286571853","doi":"https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830149"},"language":"en","primary_location":{"id":"doi:10.1109/vlsitechnologyandcir46769.2022.9830149","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830149","pdf_url":null,"source":{"id":"https://openalex.org/S4363605407","display_name":"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5081350614","display_name":"M. Y. Song","orcid":null},"institutions":[],"countries":[],"is_corresponding":true,"raw_author_name":"M. Y. Song","raw_affiliation_strings":["Taiwan Semiconductor Manufacturing Company,Corporate Research,Hsinchu,R.O.C","Corporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu, R.O.C"],"affiliations":[{"raw_affiliation_string":"Taiwan Semiconductor Manufacturing Company,Corporate Research,Hsinchu,R.O.C","institution_ids":[]},{"raw_affiliation_string":"Corporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu, R.O.C","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5064063425","display_name":"C. M. Lee","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"C. M. Lee","raw_affiliation_strings":["Taiwan Semiconductor Manufacturing Company,Corporate Research,Hsinchu,R.O.C","Corporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu, R.O.C"],"affiliations":[{"raw_affiliation_string":"Taiwan Semiconductor Manufacturing Company,Corporate Research,Hsinchu,R.O.C","institution_ids":[]},{"raw_affiliation_string":"Corporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu, R.O.C","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5004965024","display_name":"Shao\u2010Yu Yang","orcid":"https://orcid.org/0000-0001-9170-2566"},"institutions":[{"id":"https://openalex.org/I142066694","display_name":"ITRI International","ror":"https://ror.org/04wwsbd59","country_code":"US","type":"facility","lineage":["https://openalex.org/I142066694"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"S. Y. Yang","raw_affiliation_strings":["Industrial Technology Research Institute,EOSRL,Hsinchu,R.O.C.,31040"],"affiliations":[{"raw_affiliation_string":"Industrial Technology Research Institute,EOSRL,Hsinchu,R.O.C.,31040","institution_ids":["https://openalex.org/I142066694"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5069975354","display_name":"G. L. Chen","orcid":null},"institutions":[{"id":"https://openalex.org/I142066694","display_name":"ITRI International","ror":"https://ror.org/04wwsbd59","country_code":"US","type":"facility","lineage":["https://openalex.org/I142066694"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"G. L. Chen","raw_affiliation_strings":["Industrial Technology Research Institute,EOSRL,Hsinchu,R.O.C.,31040"],"affiliations":[{"raw_affiliation_string":"Industrial Technology Research Institute,EOSRL,Hsinchu,R.O.C.,31040","institution_ids":["https://openalex.org/I142066694"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5026793215","display_name":"K. M. Chen","orcid":null},"institutions":[{"id":"https://openalex.org/I142066694","display_name":"ITRI International","ror":"https://ror.org/04wwsbd59","country_code":"US","type":"facility","lineage":["https://openalex.org/I142066694"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"K. M. Chen","raw_affiliation_strings":["Industrial Technology Research Institute,EOSRL,Hsinchu,R.O.C.,31040"],"affiliations":[{"raw_affiliation_string":"Industrial Technology Research Institute,EOSRL,Hsinchu,R.O.C.,31040","institution_ids":["https://openalex.org/I142066694"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5026030781","display_name":"I J. Wang","orcid":null},"institutions":[{"id":"https://openalex.org/I142066694","display_name":"ITRI International","ror":"https://ror.org/04wwsbd59","country_code":"US","type":"facility","lineage":["https://openalex.org/I142066694"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"I J. Wang","raw_affiliation_strings":["Industrial Technology Research Institute,EOSRL,Hsinchu,R.O.C.,31040"],"affiliations":[{"raw_affiliation_string":"Industrial Technology Research Institute,EOSRL,Hsinchu,R.O.C.,31040","institution_ids":["https://openalex.org/I142066694"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111744268","display_name":"Yu-Chen Hsin","orcid":null},"institutions":[{"id":"https://openalex.org/I142066694","display_name":"ITRI International","ror":"https://ror.org/04wwsbd59","country_code":"US","type":"facility","lineage":["https://openalex.org/I142066694"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Y. C. Hsin","raw_affiliation_strings":["Industrial Technology Research Institute,EOSRL,Hsinchu,R.O.C.,31040"],"affiliations":[{"raw_affiliation_string":"Industrial Technology Research Institute,EOSRL,Hsinchu,R.O.C.,31040","institution_ids":["https://openalex.org/I142066694"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5043973587","display_name":"K. T. Chang","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"K. T. Chang","raw_affiliation_strings":["Taiwan Semiconductor Manufacturing Company,Corporate Research,Hsinchu,R.O.C","Corporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu, R.O.C"],"affiliations":[{"raw_affiliation_string":"Taiwan Semiconductor Manufacturing Company,Corporate Research,Hsinchu,R.O.C","institution_ids":[]},{"raw_affiliation_string":"Corporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu, R.O.C","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5030228277","display_name":"Chen-Feng Hsu","orcid":"https://orcid.org/0009-0002-0298-2813"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"C. F. Hsu","raw_affiliation_strings":["Taiwan Semiconductor Manufacturing Company,Corporate Research,Hsinchu,R.O.C","Corporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu, R.O.C"],"affiliations":[{"raw_affiliation_string":"Taiwan Semiconductor Manufacturing Company,Corporate Research,Hsinchu,R.O.C","institution_ids":[]},{"raw_affiliation_string":"Corporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu, R.O.C","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5028475261","display_name":"S. H. Li","orcid":null},"institutions":[{"id":"https://openalex.org/I142066694","display_name":"ITRI International","ror":"https://ror.org/04wwsbd59","country_code":"US","type":"facility","lineage":["https://openalex.org/I142066694"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"S. H. Li","raw_affiliation_strings":["Industrial Technology Research Institute,EOSRL,Hsinchu,R.O.C.,31040"],"affiliations":[{"raw_affiliation_string":"Industrial Technology Research Institute,EOSRL,Hsinchu,R.O.C.,31040","institution_ids":["https://openalex.org/I142066694"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109093588","display_name":"J. H. Wei","orcid":"https://orcid.org/0000-0003-3364-9538"},"institutions":[{"id":"https://openalex.org/I142066694","display_name":"ITRI International","ror":"https://ror.org/04wwsbd59","country_code":"US","type":"facility","lineage":["https://openalex.org/I142066694"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"J. H. Wei","raw_affiliation_strings":["Industrial Technology Research Institute,EOSRL,Hsinchu,R.O.C.,31040"],"affiliations":[{"raw_affiliation_string":"Industrial Technology Research Institute,EOSRL,Hsinchu,R.O.C.,31040","institution_ids":["https://openalex.org/I142066694"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5114178620","display_name":"T. Y. Lee","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"T. Y. Lee","raw_affiliation_strings":["Taiwan Semiconductor Manufacturing Company,Corporate Research,Hsinchu,R.O.C","Corporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu, R.O.C"],"affiliations":[{"raw_affiliation_string":"Taiwan Semiconductor Manufacturing Company,Corporate Research,Hsinchu,R.O.C","institution_ids":[]},{"raw_affiliation_string":"Corporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu, R.O.C","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5023225287","display_name":"Meng\u2010Fan Chang","orcid":"https://orcid.org/0000-0001-6905-6350"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"M. F. Chang","raw_affiliation_strings":["Taiwan Semiconductor Manufacturing Company,Corporate Research,Hsinchu,R.O.C","Corporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu, R.O.C"],"affiliations":[{"raw_affiliation_string":"Taiwan Semiconductor Manufacturing Company,Corporate Research,Hsinchu,R.O.C","institution_ids":[]},{"raw_affiliation_string":"Corporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu, R.O.C","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5053286487","display_name":"Xinyu Bao","orcid":"https://orcid.org/0000-0001-8698-1281"},"institutions":[{"id":"https://openalex.org/I1334877674","display_name":"Taiwan Semiconductor Manufacturing Company (United States)","ror":"https://ror.org/02rvfjx92","country_code":"US","type":"company","lineage":["https://openalex.org/I1334877674","https://openalex.org/I4210120917"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"X. Y. Bao","raw_affiliation_strings":["Taiwan Semiconductor Manufacturing Company,Corporate Research,San Jose,CA,USA","Corporate Research, Taiwan Semiconductor Manufacturing Company, San Jose, CA, USA"],"affiliations":[{"raw_affiliation_string":"Taiwan Semiconductor Manufacturing Company,Corporate Research,San Jose,CA,USA","institution_ids":["https://openalex.org/I1334877674"]},{"raw_affiliation_string":"Corporate Research, Taiwan Semiconductor Manufacturing Company, San Jose, CA, USA","institution_ids":["https://openalex.org/I1334877674"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5033141421","display_name":"C.H. Diaz","orcid":"https://orcid.org/0000-0002-7235-3636"},"institutions":[{"id":"https://openalex.org/I1334877674","display_name":"Taiwan Semiconductor Manufacturing Company (United States)","ror":"https://ror.org/02rvfjx92","country_code":"US","type":"company","lineage":["https://openalex.org/I1334877674","https://openalex.org/I4210120917"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"C. H. Diaz","raw_affiliation_strings":["Taiwan Semiconductor Manufacturing Company,Corporate Research,San Jose,CA,USA","Corporate Research, Taiwan Semiconductor Manufacturing Company, San Jose, CA, USA"],"affiliations":[{"raw_affiliation_string":"Taiwan Semiconductor Manufacturing Company,Corporate Research,San Jose,CA,USA","institution_ids":["https://openalex.org/I1334877674"]},{"raw_affiliation_string":"Corporate Research, Taiwan Semiconductor Manufacturing Company, San Jose, CA, USA","institution_ids":["https://openalex.org/I1334877674"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5111714053","display_name":"S. J. Lin","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"S. J. Lin","raw_affiliation_strings":["Taiwan Semiconductor Manufacturing Company,Corporate Research,Hsinchu,R.O.C","Corporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu, R.O.C"],"affiliations":[{"raw_affiliation_string":"Taiwan Semiconductor Manufacturing Company,Corporate Research,Hsinchu,R.O.C","institution_ids":[]},{"raw_affiliation_string":"Corporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu, R.O.C","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":16,"corresponding_author_ids":["https://openalex.org/A5081350614"],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":13.2117,"has_fulltext":false,"cited_by_count":43,"citation_normalized_percentile":{"value":0.99593909,"is_in_top_1_percent":true,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":94,"max":100},"biblio":{"volume":null,"issue":null,"first_page":"377","last_page":"378"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/magnetoresistive-random-access-memory","display_name":"Magnetoresistive random-access memory","score":0.7732785940170288},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5219009518623352},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4575272500514984},{"id":"https://openalex.org/keywords/yield","display_name":"Yield (engineering)","score":0.430513471364975},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.41439956426620483},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.4105822443962097},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.3300655484199524},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.22302040457725525},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.20537275075912476},{"id":"https://openalex.org/keywords/random-access-memory","display_name":"Random access memory","score":0.1160719096660614}],"concepts":[{"id":"https://openalex.org/C46891859","wikidata":"https://www.wikidata.org/wiki/Q1061546","display_name":"Magnetoresistive random-access memory","level":3,"score":0.7732785940170288},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5219009518623352},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4575272500514984},{"id":"https://openalex.org/C134121241","wikidata":"https://www.wikidata.org/wiki/Q899301","display_name":"Yield (engineering)","level":2,"score":0.430513471364975},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.41439956426620483},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.4105822443962097},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3300655484199524},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.22302040457725525},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.20537275075912476},{"id":"https://openalex.org/C2994168587","wikidata":"https://www.wikidata.org/wiki/Q5295","display_name":"Random access memory","level":2,"score":0.1160719096660614},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/vlsitechnologyandcir46769.2022.9830149","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830149","pdf_url":null,"source":{"id":"https://openalex.org/S4363605407","display_name":"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.4699999988079071,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":2,"referenced_works":["https://openalex.org/W2364964003","https://openalex.org/W2916265288"],"related_works":["https://openalex.org/W4391375266","https://openalex.org/W2748952813","https://openalex.org/W2935759653","https://openalex.org/W3105167352","https://openalex.org/W54078636","https://openalex.org/W2954470139","https://openalex.org/W1501425562","https://openalex.org/W2902782467","https://openalex.org/W3084825885","https://openalex.org/W2298861036"],"abstract_inverted_index":{"We":[0],"demonstrated":[1,100],"an":[2],"8Kb":[3,65],"SOT-MRAM":[4,66],"array":[5,67,74],"which":[6,50],"achieves":[7],"the":[8,43,78],"highest":[9],"field-free":[10],"switching":[11,19,28],"speed":[12],"(1ns)":[13],"never":[14],"reported.":[15],"The":[16,64],"low":[17,57],"transistor":[18],"voltage":[20],"(V":[21],"<inf":[22,32],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[23,33,38],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">SW</inf>":[24,34],")":[25,35],"1.5V":[26],"at":[27,92],"current":[29],"density":[30],"(J":[31],"68MA/cm":[36],"<sup":[37],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sup>":[39],"is":[40],"attributed":[41],"to":[42,77],"unique":[44],"tungsten-based":[45],"cSOT":[46],"channel":[47],"material":[48],"(SCM)":[49],"provides":[51],"high":[52,87,95],"spin-Hall":[53],"angle":[54],"(~0.6)":[55],"and":[56,73,94],"resistivity":[58],"(160\u03bc\u03a9-cm)":[59],"with":[60],"400\u2103":[61],"thermal":[62],"budget.":[63],"also":[68],"showed":[69],"good":[70],"read":[71],"window":[72],"yield":[75],"thanks":[76],"promising":[79],"MTJ":[80],"etching":[81],"process.":[82],"Excellent":[83],"performances":[84],"such":[85],"as":[86,101],"retention":[88],"(":[89],">>10":[90],"years":[91],"RT)":[93],"endurance":[96],"7e12":[97],"cycles":[98],"are":[99],"well.":[102]},"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2025,"cited_by_count":20},{"year":2024,"cited_by_count":15},{"year":2023,"cited_by_count":4},{"year":2022,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}