{"id":"https://openalex.org/W2059544350","doi":"https://doi.org/10.1109/vlsisoc.2011.6081658","title":"Performance evaluation of air-gap-based coaxial RF TSV for 3D NoC","display_name":"Performance evaluation of air-gap-based coaxial RF TSV for 3D NoC","publication_year":2011,"publication_date":"2011-10-01","ids":{"openalex":"https://openalex.org/W2059544350","doi":"https://doi.org/10.1109/vlsisoc.2011.6081658","mag":"2059544350"},"language":"en","primary_location":{"id":"doi:10.1109/vlsisoc.2011.6081658","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vlsisoc.2011.6081658","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2011 IEEE/IFIP 19th International Conference on VLSI and System-on-Chip","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100342650","display_name":"Le Yu","orcid":"https://orcid.org/0000-0002-9545-7091"},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210110458","display_name":"Institute of Electronics","ror":"https://ror.org/01z143507","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210110458"]},{"id":"https://openalex.org/I4210165038","display_name":"University of Chinese Academy of Sciences","ror":"https://ror.org/05qbk4x57","country_code":"CN","type":"education","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210165038"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Le Yu","raw_affiliation_strings":["Graduate University of Chinese Academy of Sciences, Beijing, China","Institute of Electronics, Chinese Academy of Sciences (CAS), Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Graduate University of Chinese Academy of Sciences, Beijing, China","institution_ids":["https://openalex.org/I4210165038"]},{"raw_affiliation_string":"Institute of Electronics, Chinese Academy of Sciences (CAS), Beijing, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210110458"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113685874","display_name":"Haigang Yang","orcid":null},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210110458","display_name":"Institute of Electronics","ror":"https://ror.org/01z143507","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210110458"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Haigang Yang","raw_affiliation_strings":["Institute of Electronics, Chinese Academy of Sciences (CAS), Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Electronics, Chinese Academy of Sciences (CAS), Beijing, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210110458"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100360710","display_name":"Jia Zhang","orcid":"https://orcid.org/0000-0003-3737-1561"},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210110458","display_name":"Institute of Electronics","ror":"https://ror.org/01z143507","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210110458"]},{"id":"https://openalex.org/I4210165038","display_name":"University of Chinese Academy of Sciences","ror":"https://ror.org/05qbk4x57","country_code":"CN","type":"education","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210165038"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jia Zhang","raw_affiliation_strings":["Graduate University of Chinese Academy of Sciences, Beijing, China","Institute of Electronics, Chinese Academy of Sciences (CAS), Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Graduate University of Chinese Academy of Sciences, Beijing, China","institution_ids":["https://openalex.org/I4210165038"]},{"raw_affiliation_string":"Institute of Electronics, Chinese Academy of Sciences (CAS), Beijing, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210110458"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100392064","display_name":"Wei Wang","orcid":"https://orcid.org/0000-0002-7180-831X"},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Wei Wang","raw_affiliation_strings":["Institute of Microelectronics, Chinese Academy of Sciences (CAS), Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, Chinese Academy of Sciences (CAS), Beijing, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":2.2375,"has_fulltext":false,"cited_by_count":9,"citation_normalized_percentile":{"value":0.87125507,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":"40","issue":null,"first_page":"94","last_page":"97"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10299","display_name":"Photonic and Optical Devices","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10299","display_name":"Photonic and Optical Devices","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10829","display_name":"Interconnection Networks and Systems","score":0.996399998664856,"subfield":{"id":"https://openalex.org/subfields/1705","display_name":"Computer Networks and Communications"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/through-silicon-via","display_name":"Through-silicon via","score":0.7702827453613281},{"id":"https://openalex.org/keywords/coaxial","display_name":"Coaxial","score":0.6958856582641602},{"id":"https://openalex.org/keywords/interconnection","display_name":"Interconnection","score":0.6039028763771057},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.524997353553772},{"id":"https://openalex.org/keywords/bandwidth","display_name":"Bandwidth (computing)","score":0.5152347683906555},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4996170997619629},{"id":"https://openalex.org/keywords/attenuation","display_name":"Attenuation","score":0.49333086609840393},{"id":"https://openalex.org/keywords/air-gap","display_name":"Air gap (plumbing)","score":0.4632972180843353},{"id":"https://openalex.org/keywords/dissipation","display_name":"Dissipation","score":0.45993852615356445},{"id":"https://openalex.org/keywords/radio-frequency","display_name":"Radio frequency","score":0.4304940700531006},{"id":"https://openalex.org/keywords/chip","display_name":"Chip","score":0.42121976613998413},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4065142869949341},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3401465117931366},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3263527750968933},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.3008609414100647},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.24667158722877502},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.2225278615951538},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.11864355206489563},{"id":"https://openalex.org/keywords/optics","display_name":"Optics","score":0.08166313171386719}],"concepts":[{"id":"https://openalex.org/C45632049","wikidata":"https://www.wikidata.org/wiki/Q1578120","display_name":"Through-silicon via","level":3,"score":0.7702827453613281},{"id":"https://openalex.org/C51221625","wikidata":"https://www.wikidata.org/wiki/Q1751466","display_name":"Coaxial","level":2,"score":0.6958856582641602},{"id":"https://openalex.org/C123745756","wikidata":"https://www.wikidata.org/wiki/Q1665949","display_name":"Interconnection","level":2,"score":0.6039028763771057},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.524997353553772},{"id":"https://openalex.org/C2776257435","wikidata":"https://www.wikidata.org/wiki/Q1576430","display_name":"Bandwidth (computing)","level":2,"score":0.5152347683906555},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4996170997619629},{"id":"https://openalex.org/C184652730","wikidata":"https://www.wikidata.org/wiki/Q2357982","display_name":"Attenuation","level":2,"score":0.49333086609840393},{"id":"https://openalex.org/C50587689","wikidata":"https://www.wikidata.org/wiki/Q4698328","display_name":"Air gap (plumbing)","level":2,"score":0.4632972180843353},{"id":"https://openalex.org/C135402231","wikidata":"https://www.wikidata.org/wiki/Q898440","display_name":"Dissipation","level":2,"score":0.45993852615356445},{"id":"https://openalex.org/C74064498","wikidata":"https://www.wikidata.org/wiki/Q3396184","display_name":"Radio frequency","level":2,"score":0.4304940700531006},{"id":"https://openalex.org/C165005293","wikidata":"https://www.wikidata.org/wiki/Q1074500","display_name":"Chip","level":2,"score":0.42121976613998413},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4065142869949341},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3401465117931366},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3263527750968933},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.3008609414100647},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.24667158722877502},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.2225278615951538},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.11864355206489563},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.08166313171386719},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.0},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/vlsisoc.2011.6081658","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vlsisoc.2011.6081658","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2011 IEEE/IFIP 19th International Conference on VLSI and System-on-Chip","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.8700000047683716,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[{"id":"https://openalex.org/F4320309644","display_name":"State University of New York","ror":"https://ror.org/01q1z8k08"},{"id":"https://openalex.org/F4320332911","display_name":"University at Albany","ror":"https://ror.org/012zs8222"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":19,"referenced_works":["https://openalex.org/W2076391959","https://openalex.org/W2105931511","https://openalex.org/W2125357468","https://openalex.org/W2126475076","https://openalex.org/W2129118025","https://openalex.org/W2134828064","https://openalex.org/W2144797778","https://openalex.org/W2146274038","https://openalex.org/W2153443121","https://openalex.org/W2161743155","https://openalex.org/W2214547131","https://openalex.org/W2798875205","https://openalex.org/W4229594554","https://openalex.org/W4244222459","https://openalex.org/W6678665702","https://openalex.org/W6679167355","https://openalex.org/W6682366740","https://openalex.org/W6688966616","https://openalex.org/W6750616722"],"related_works":["https://openalex.org/W2013596674","https://openalex.org/W3201354157","https://openalex.org/W2748443500","https://openalex.org/W2333551523","https://openalex.org/W1993906902","https://openalex.org/W2329762937","https://openalex.org/W2007901850","https://openalex.org/W4292405865","https://openalex.org/W1992809611","https://openalex.org/W1983191281"],"abstract_inverted_index":{"In":[0],"this":[1],"paper,":[2],"a":[3],"novel":[4],"air-gap-based":[5,82],"coaxial":[6,83],"Through":[7],"Silicon":[8],"Via":[9],"(TSV)":[10],"was":[11],"proposed":[12,81,97],"for":[13,30,36],"on-chip":[14],"RF":[15,108],"interconnect,":[16],"to":[17,70],"fill":[18],"up":[19],"the":[20,25,31,42,80,89,96,105],"increasing":[21],"bandwidth":[22,49],"gap":[23],"between":[24],"demand":[26],"and":[27,48,75,92,101],"supply":[28],"according":[29],"2007":[32],"International":[33],"Technology":[34],"Roadmap":[35],"Semiconductors.":[37],"Based":[38],"on":[39],"earlier":[40],"work,":[41],"expressions":[43],"of":[44,79,95],"characteristic":[45],"impedance,":[46],"attenuation":[47],"have":[50],"been":[51],"proposed.":[52],"Consequently,":[53],"we":[54],"assume":[55],"an":[56],"80":[57],"multi-core":[58],"3D":[59],"Network-on-Chip":[60],"(NoC)":[61],"system":[62],"with":[63],"Binary":[64],"Phase":[65],"Shift":[66],"Keying":[67],"(BPSK)":[68],"modulation,":[69],"evaluate":[71],"energy":[72,90],"per":[73,77],"bit":[74],"area":[76,93],"Gbps":[78],"TSV.":[84,109],"The":[85],"result":[86],"indicates":[87],"that":[88],"dissipation":[91],"consumption":[94],"one":[98],"are":[99],"40~50%":[100],"10%":[102],"better":[103],"than":[104],"conventional":[106],"dielectric":[107]},"counts_by_year":[{"year":2017,"cited_by_count":2},{"year":2016,"cited_by_count":2},{"year":2014,"cited_by_count":1},{"year":2013,"cited_by_count":3},{"year":2012,"cited_by_count":1}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}