{"id":"https://openalex.org/W2068715387","doi":"https://doi.org/10.1109/vlsisoc.2011.6081648","title":"Self-test method and recovery mechanism for high frequency TSV array","display_name":"Self-test method and recovery mechanism for high frequency TSV array","publication_year":2011,"publication_date":"2011-10-01","ids":{"openalex":"https://openalex.org/W2068715387","doi":"https://doi.org/10.1109/vlsisoc.2011.6081648","mag":"2068715387"},"language":"en","primary_location":{"id":"doi:10.1109/vlsisoc.2011.6081648","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vlsisoc.2011.6081648","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2011 IEEE/IFIP 19th International Conference on VLSI and System-on-Chip","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100360710","display_name":"Jia Zhang","orcid":"https://orcid.org/0000-0003-3737-1561"},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210110458","display_name":"Institute of Electronics","ror":"https://ror.org/01z143507","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210110458"]},{"id":"https://openalex.org/I4210165038","display_name":"University of Chinese Academy of Sciences","ror":"https://ror.org/05qbk4x57","country_code":"CN","type":"education","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210165038"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jia Zhang","raw_affiliation_strings":["Graduate University of Chinese Academy of Sciences, Beijing, China","Institute of Electronics, Chinese Academy of Sciences (CAS), Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Graduate University of Chinese Academy of Sciences, Beijing, China","institution_ids":["https://openalex.org/I4210165038"]},{"raw_affiliation_string":"Institute of Electronics, Chinese Academy of Sciences (CAS), Beijing, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210110458"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100342650","display_name":"Le Yu","orcid":"https://orcid.org/0000-0002-9545-7091"},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210110458","display_name":"Institute of Electronics","ror":"https://ror.org/01z143507","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210110458"]},{"id":"https://openalex.org/I4210165038","display_name":"University of Chinese Academy of Sciences","ror":"https://ror.org/05qbk4x57","country_code":"CN","type":"education","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210165038"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Le Yu","raw_affiliation_strings":["Graduate University of Chinese Academy of Sciences, Beijing, China","Institute of Electronics, Chinese Academy of Sciences (CAS), Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Graduate University of Chinese Academy of Sciences, Beijing, China","institution_ids":["https://openalex.org/I4210165038"]},{"raw_affiliation_string":"Institute of Electronics, Chinese Academy of Sciences (CAS), Beijing, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210110458"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5087392088","display_name":"Haigang Yang","orcid":"https://orcid.org/0000-0002-6471-9730"},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210110458","display_name":"Institute of Electronics","ror":"https://ror.org/01z143507","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210110458"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Haigang Yang","raw_affiliation_strings":["Institute of Electronics, Chinese Academy of Sciences (CAS), Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Electronics, Chinese Academy of Sciences (CAS), Beijing, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210110458"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109436665","display_name":"Y. L. Xie","orcid":null},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210110458","display_name":"Institute of Electronics","ror":"https://ror.org/01z143507","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210110458"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Y. L. Xie","raw_affiliation_strings":["Institute of Electronics, Chinese Academy of Sciences (CAS), Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Electronics, Chinese Academy of Sciences (CAS), Beijing, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210110458"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111803125","display_name":"Feixue Zhou","orcid":null},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210110458","display_name":"Institute of Electronics","ror":"https://ror.org/01z143507","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210110458"]},{"id":"https://openalex.org/I4210165038","display_name":"University of Chinese Academy of Sciences","ror":"https://ror.org/05qbk4x57","country_code":"CN","type":"education","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210165038"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"F. B. Zhou","raw_affiliation_strings":["Graduate University of Chinese Academy of Sciences, Beijing, China","Institute of Electronics, Chinese Academy of Sciences (CAS), Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Graduate University of Chinese Academy of Sciences, Beijing, China","institution_ids":["https://openalex.org/I4210165038"]},{"raw_affiliation_string":"Institute of Electronics, Chinese Academy of Sciences (CAS), Beijing, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210110458"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100391999","display_name":"Wei Wang","orcid":"https://orcid.org/0000-0002-5257-7675"},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Wei Wang","raw_affiliation_strings":["Institute of Microelectronics, Chinese Academy of Sciences (CAS), Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, Chinese Academy of Sciences (CAS), Beijing, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":2.2375,"has_fulltext":false,"cited_by_count":14,"citation_normalized_percentile":{"value":0.87196379,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"260","last_page":"265"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.5844877362251282},{"id":"https://openalex.org/keywords/capacitive-sensing","display_name":"Capacitive sensing","score":0.5638430714607239},{"id":"https://openalex.org/keywords/signal","display_name":"SIGNAL (programming language)","score":0.5498221516609192},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5040211081504822},{"id":"https://openalex.org/keywords/resistive-touchscreen","display_name":"Resistive touchscreen","score":0.49284791946411133},{"id":"https://openalex.org/keywords/chip","display_name":"Chip","score":0.4786706864833832},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.4679226875305176},{"id":"https://openalex.org/keywords/signal-integrity","display_name":"Signal integrity","score":0.4504108428955078},{"id":"https://openalex.org/keywords/conductor","display_name":"Conductor","score":0.4490830600261688},{"id":"https://openalex.org/keywords/through-silicon-via","display_name":"Through-silicon via","score":0.43036895990371704},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.36728447675704956},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.35567545890808105},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.2738327980041504},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.23172324895858765},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.22130796313285828},{"id":"https://openalex.org/keywords/printed-circuit-board","display_name":"Printed circuit board","score":0.20330438017845154}],"concepts":[{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.5844877362251282},{"id":"https://openalex.org/C206755178","wikidata":"https://www.wikidata.org/wiki/Q1131271","display_name":"Capacitive sensing","level":2,"score":0.5638430714607239},{"id":"https://openalex.org/C2779843651","wikidata":"https://www.wikidata.org/wiki/Q7390335","display_name":"SIGNAL (programming language)","level":2,"score":0.5498221516609192},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5040211081504822},{"id":"https://openalex.org/C6899612","wikidata":"https://www.wikidata.org/wiki/Q852911","display_name":"Resistive touchscreen","level":2,"score":0.49284791946411133},{"id":"https://openalex.org/C165005293","wikidata":"https://www.wikidata.org/wiki/Q1074500","display_name":"Chip","level":2,"score":0.4786706864833832},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.4679226875305176},{"id":"https://openalex.org/C44938667","wikidata":"https://www.wikidata.org/wiki/Q4503810","display_name":"Signal integrity","level":3,"score":0.4504108428955078},{"id":"https://openalex.org/C34800285","wikidata":"https://www.wikidata.org/wiki/Q5159395","display_name":"Conductor","level":2,"score":0.4490830600261688},{"id":"https://openalex.org/C45632049","wikidata":"https://www.wikidata.org/wiki/Q1578120","display_name":"Through-silicon via","level":3,"score":0.43036895990371704},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.36728447675704956},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.35567545890808105},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.2738327980041504},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.23172324895858765},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.22130796313285828},{"id":"https://openalex.org/C120793396","wikidata":"https://www.wikidata.org/wiki/Q173350","display_name":"Printed circuit board","level":2,"score":0.20330438017845154},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0},{"id":"https://openalex.org/C160671074","wikidata":"https://www.wikidata.org/wiki/Q267131","display_name":"Wafer","level":2,"score":0.0},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/vlsisoc.2011.6081648","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vlsisoc.2011.6081648","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2011 IEEE/IFIP 19th International Conference on VLSI and System-on-Chip","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.4699999988079071}],"awards":[],"funders":[{"id":"https://openalex.org/F4320309644","display_name":"State University of New York","ror":"https://ror.org/01q1z8k08"},{"id":"https://openalex.org/F4320321133","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35"},{"id":"https://openalex.org/F4320332911","display_name":"University at Albany","ror":"https://ror.org/012zs8222"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":16,"referenced_works":["https://openalex.org/W1978300964","https://openalex.org/W2013679798","https://openalex.org/W2076391959","https://openalex.org/W2102304175","https://openalex.org/W2110075134","https://openalex.org/W2123230983","https://openalex.org/W2124414146","https://openalex.org/W2130533525","https://openalex.org/W2152784042","https://openalex.org/W2153443121","https://openalex.org/W2154266093","https://openalex.org/W2162000559","https://openalex.org/W2214547131","https://openalex.org/W4244222459","https://openalex.org/W6682366740","https://openalex.org/W6688966616"],"related_works":["https://openalex.org/W3142313280","https://openalex.org/W2059048848","https://openalex.org/W2557839727","https://openalex.org/W2969719637","https://openalex.org/W51629545","https://openalex.org/W2093650582","https://openalex.org/W2142764951","https://openalex.org/W2530741851","https://openalex.org/W2038892969","https://openalex.org/W2051282954"],"abstract_inverted_index":{"In":[0],"this":[1],"paper,":[2],"through-silicon":[3],"via":[4],"(TSV)":[5],"array":[6,59],"in":[7,143,164,175],"the":[8,37,64,73,78,87,97,104,111,122,127,133,151,176],"form":[9],"of":[10,44,132,147,172],"one":[11],"signal":[12,91,149],"and":[13,40,48,82,92,114,120,129,138],"four":[14],"grounds":[15],"(1S4G)":[16],"are":[17],"proposed":[18],"to":[19,35,62,72,85,162],"achieve":[20],"high-frequency":[21],"vertical":[22],"connectivity":[23],"for":[24,55,166],"various":[25],"three":[26],"dimensional":[27],"(3D)":[28],"IC":[29],"applications.":[30],"Self-test":[31],"method":[32],"is":[33,60,136],"developed":[34],"detect":[36,119],"conductor":[38],"open":[39],"insulator":[41],"short":[42],"defects":[43],"TSV":[45,58,65,74,158,178],"by":[46,77,103],"capacitive":[47],"resistive":[49],"measuring.":[50],"Further":[51],"a":[52,57,144],"recovery":[53,134],"mechanism":[54,135],"such":[56],"introduced":[61],"enhance":[63],"reliability.":[66],"Test":[67],"results":[68,108],"will":[69],"be":[70,83,101],"configured":[71],"chain":[75],"circuits":[76],"central":[79,115],"control":[80,116],"logic":[81,117],"used":[84],"determine":[86],"connection":[88],"jumping":[89],"between":[90],"redundant":[93,105],"TSVs.":[94],"This":[95],"way,":[96],"failure":[98,159],"TSVs":[99,124],"could":[100,118,154],"replaced":[102],"ones.":[106],"Simulation":[107],"demonstrate":[109],"that":[110,142],"self-test":[112,173],"circuit":[113,174],"recover":[121],"broken":[123],"correctly.":[125],"Moreover,":[126],"efficiency":[128],"area":[130,170],"cost":[131,171],"discussed,":[137],"it":[139],"turns":[140],"out":[141],"typical":[145],"case":[146],"96":[148],"TSVs,":[150],"chip":[152],"yield":[153],"reach":[155],"90%":[156],"with":[157],"rate":[160],"equal":[161],"5%,":[163],"exchange":[165],"less":[167],"than":[168],"4%":[169],"whole":[177],"area.":[179]},"counts_by_year":[{"year":2020,"cited_by_count":2},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":2},{"year":2017,"cited_by_count":2},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":1},{"year":2013,"cited_by_count":3},{"year":2012,"cited_by_count":2}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}