{"id":"https://openalex.org/W7138172006","doi":"https://doi.org/10.1109/vlsid68508.2026.00087","title":"Exploring the Resilience Nature of AlN Cap Layer in AlGaN/GaN HEMT Under Thermal Conditions","display_name":"Exploring the Resilience Nature of AlN Cap Layer in AlGaN/GaN HEMT Under Thermal Conditions","publication_year":2026,"publication_date":"2026-01-03","ids":{"openalex":"https://openalex.org/W7138172006","doi":"https://doi.org/10.1109/vlsid68508.2026.00087"},"language":null,"primary_location":{"id":"doi:10.1109/vlsid68508.2026.00087","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vlsid68508.2026.00087","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2026 39th International Conference on VLSI Design & 25th International Conference on Embedded Systems (VLSID)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5041155174","display_name":"Ellapu Bhanu Prakash","orcid":"https://orcid.org/0009-0007-5483-8887"},"institutions":[{"id":"https://openalex.org/I195459967","display_name":"Mizoram University","ror":"https://ror.org/04b1m3e94","country_code":"IN","type":"education","lineage":["https://openalex.org/I195459967"]},{"id":"https://openalex.org/I4210157823","display_name":"Government of Mizoram","ror":"https://ror.org/05xemz742","country_code":"IN","type":"government","lineage":["https://openalex.org/I4210157823"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Ellapu Bhanu Prakash","raw_affiliation_strings":["National Inst. of Tech. Mizoram,Dept. of ECE,Aizawl,Mizoram,India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Inst. of Tech. Mizoram,Dept. of ECE,Aizawl,Mizoram,India","institution_ids":["https://openalex.org/I195459967","https://openalex.org/I4210157823"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5023166702","display_name":"A K Ray","orcid":null},"institutions":[{"id":"https://openalex.org/I160302567","display_name":"North Eastern Regional Institute of Science and Technology","ror":"https://ror.org/01wbhqj28","country_code":"IN","type":"education","lineage":["https://openalex.org/I160302567"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Ashok Ray","raw_affiliation_strings":["NERIST,Dept. of ECE,Nirjuli,Arunachal Pradesh,India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NERIST,Dept. of ECE,Nirjuli,Arunachal Pradesh,India","institution_ids":["https://openalex.org/I160302567"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5083110299","display_name":"Sushanta Bordoloi","orcid":"https://orcid.org/0000-0002-5179-0861"},"institutions":[{"id":"https://openalex.org/I195459967","display_name":"Mizoram University","ror":"https://ror.org/04b1m3e94","country_code":"IN","type":"education","lineage":["https://openalex.org/I195459967"]},{"id":"https://openalex.org/I4210157823","display_name":"Government of Mizoram","ror":"https://ror.org/05xemz742","country_code":"IN","type":"government","lineage":["https://openalex.org/I4210157823"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Sushanta Bordoloi","raw_affiliation_strings":["National Inst. of Tech. Mizoram,Dept. of ECE,Aizawl,Mizoram,India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Inst. of Tech. Mizoram,Dept. of ECE,Aizawl,Mizoram,India","institution_ids":["https://openalex.org/I195459967","https://openalex.org/I4210157823"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.29590018,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"431","last_page":"436"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9896000027656555,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9896000027656555,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.002300000051036477,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11277","display_name":"Thermal properties of materials","score":0.0012000000569969416,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.6126999855041504},{"id":"https://openalex.org/keywords/resilience","display_name":"Resilience (materials science)","score":0.5983999967575073},{"id":"https://openalex.org/keywords/thermal","display_name":"Thermal","score":0.5521000027656555},{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.4124000072479248},{"id":"https://openalex.org/keywords/degradation","display_name":"Degradation (telecommunications)","score":0.3407999873161316}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6518999934196472},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.6126999855041504},{"id":"https://openalex.org/C2779585090","wikidata":"https://www.wikidata.org/wiki/Q3457762","display_name":"Resilience (materials science)","level":2,"score":0.5983999967575073},{"id":"https://openalex.org/C204530211","wikidata":"https://www.wikidata.org/wiki/Q752823","display_name":"Thermal","level":2,"score":0.5521000027656555},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.47540000081062317},{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.4124000072479248},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.3407999873161316},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.33730000257492065},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.30410000681877136},{"id":"https://openalex.org/C97346530","wikidata":"https://www.wikidata.org/wiki/Q487005","display_name":"Thermal conductivity","level":2,"score":0.2410999983549118}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/vlsid68508.2026.00087","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vlsid68508.2026.00087","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2026 39th International Conference on VLSI Design & 25th International Conference on Embedded Systems (VLSID)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Climate action","id":"https://metadata.un.org/sdg/13","score":0.6277095675468445}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":23,"referenced_works":["https://openalex.org/W1976560127","https://openalex.org/W2139228516","https://openalex.org/W2162871852","https://openalex.org/W2997402387","https://openalex.org/W2998448470","https://openalex.org/W3134631746","https://openalex.org/W3186108929","https://openalex.org/W3196538218","https://openalex.org/W4206167811","https://openalex.org/W4211171530","https://openalex.org/W4220862896","https://openalex.org/W4226189417","https://openalex.org/W4229446626","https://openalex.org/W4362500732","https://openalex.org/W4395666728","https://openalex.org/W4401828643","https://openalex.org/W4404030898","https://openalex.org/W4405429799","https://openalex.org/W4407247304","https://openalex.org/W4410855071","https://openalex.org/W4410886977","https://openalex.org/W4413087295","https://openalex.org/W4413180311"],"related_works":[],"abstract_inverted_index":{"This":[0],"study":[1],"explores":[2],"the":[3,21,57,94,105,134,141],"effectiveness":[4],"of":[5,23],"an":[6,51,146],"aluminum":[7],"nitride":[8],"(AlN)":[9],"cap":[10,87,143],"layer":[11,144],"that":[12,56,140],"can":[13],"be":[14],"suppress":[15],"self-heating":[16],"effects":[17],"(SHE)":[18],"and":[19,49,72,123,152],"improve":[20],"performance":[22],"AlGaN/GaN":[24],"high":[25],"electron":[26,90],"mobility":[27],"transistors":[28],"(HEMTs).":[29],"Using":[30],"calibrated":[31],"Sentaurus":[32],"TCAD":[33],"simulations,":[34],"three":[35],"device":[36],"configurations":[37],"are":[38],"compared":[39],"such":[40],"as":[41],"without":[42],"a":[43,46,111,124],"cap,":[44,48],"with":[45,50],"GaN":[47],"AlN":[52,86,142],"cap.":[53],"Results":[54],"demonstrated":[55],"hotspot":[58],"lattice":[59],"temperature":[60],"decreases":[61],"from":[62],"321":[63],"K":[64,69,76],"(no":[65],"cap)":[66,71,78],"to":[67,74,80],"314":[68],"(GaN":[70],"further":[73],"309":[75],"(AlN":[77],"owing":[79],"AlN's":[81],"superior":[82],"thermal":[83],"conductivity.":[84],"The":[85],"also":[88],"improves":[89],"confinement":[91],"which":[92],"raises":[93],"2DEG":[95],"density":[96],"to$1.32":[97],"\\times":[98,102],"10^{13}":[99,103],"~\\text{cm}^{-2}$compared":[100],"to$1.11":[101],"~\\text{cm}^{-2}$in":[104],"conventional":[106],"device.":[107],"Performance":[108],"improvements":[109],"include":[110],"110":[112],"%":[113,126],"increase":[114],"in":[115,128,155],"drain":[116],"current":[117],"($\\mathbf{I}_{d":[118],"s}$),":[119],"73%":[120],"higher":[121],"transconductance$g_{m}$,":[122],"22":[125],"reduction":[127],"peak":[129],"electric":[130],"field":[131],"(EFP)":[132],"at":[133],"gate":[135],"edge.":[136],"These":[137],"results":[138],"emphasize":[139],"is":[145],"effective":[147],"technique":[148],"for":[149],"mitigating":[150],"SHE":[151],"enhancing":[153],"reliability":[154],"high-power,":[156],"high-frequency":[157],"GaN-based":[158],"electronics.":[159]},"counts_by_year":[],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2026-03-18T00:00:00"}