{"id":"https://openalex.org/W7138342456","doi":"https://doi.org/10.1109/vlsid68508.2026.00075","title":"Scaling Limits and Reliability Challenges of Nanoscale GaN HEMTs: A Path Toward Advanced Node Benchmarking for DC and RF Applications","display_name":"Scaling Limits and Reliability Challenges of Nanoscale GaN HEMTs: A Path Toward Advanced Node Benchmarking for DC and RF Applications","publication_year":2026,"publication_date":"2026-01-03","ids":{"openalex":"https://openalex.org/W7138342456","doi":"https://doi.org/10.1109/vlsid68508.2026.00075"},"language":null,"primary_location":{"id":"doi:10.1109/vlsid68508.2026.00075","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vlsid68508.2026.00075","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2026 39th International Conference on VLSI Design & 25th International Conference on Embedded Systems (VLSID)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5040493255","display_name":"Shivansh Awasthi","orcid":"https://orcid.org/0000-0002-0467-5860"},"institutions":[{"id":"https://openalex.org/I68891433","display_name":"Indian Institute of Technology Delhi","ror":"https://ror.org/049tgcd06","country_code":"IN","type":"education","lineage":["https://openalex.org/I68891433"]}],"countries":["IN"],"is_corresponding":true,"raw_author_name":"Shivansh Awasthi","raw_affiliation_strings":["Centre for Applied Research in Electronics, Indian Institute of Technology, Delhi,New Delhi,India"],"affiliations":[{"raw_affiliation_string":"Centre for Applied Research in Electronics, Indian Institute of Technology, Delhi,New Delhi,India","institution_ids":["https://openalex.org/I68891433"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5129680480","display_name":"Vikas Kumar","orcid":null},"institutions":[{"id":"https://openalex.org/I68891433","display_name":"Indian Institute of Technology Delhi","ror":"https://ror.org/049tgcd06","country_code":"IN","type":"education","lineage":["https://openalex.org/I68891433"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Vikas Kumar","raw_affiliation_strings":["Centre for Applied Research in Electronics, Indian Institute of Technology, Delhi,New Delhi,India"],"affiliations":[{"raw_affiliation_string":"Centre for Applied Research in Electronics, Indian Institute of Technology, Delhi,New Delhi,India","institution_ids":["https://openalex.org/I68891433"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5129656675","display_name":"Ankur Gupta","orcid":null},"institutions":[{"id":"https://openalex.org/I68891433","display_name":"Indian Institute of Technology Delhi","ror":"https://ror.org/049tgcd06","country_code":"IN","type":"education","lineage":["https://openalex.org/I68891433"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Ankur Gupta","raw_affiliation_strings":["Centre for Applied Research in Electronics, Indian Institute of Technology, Delhi,New Delhi,India"],"affiliations":[{"raw_affiliation_string":"Centre for Applied Research in Electronics, Indian Institute of Technology, Delhi,New Delhi,India","institution_ids":["https://openalex.org/I68891433"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5040493255"],"corresponding_institution_ids":["https://openalex.org/I68891433"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.90697674,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"359","last_page":"364"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9799000024795532,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9799000024795532,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.003800000064074993,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.002199999988079071,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.6607000231742859},{"id":"https://openalex.org/keywords/path","display_name":"Path (computing)","score":0.574400007724762},{"id":"https://openalex.org/keywords/node","display_name":"Node (physics)","score":0.5561000108718872},{"id":"https://openalex.org/keywords/scaling","display_name":"Scaling","score":0.5508999824523926},{"id":"https://openalex.org/keywords/benchmarking","display_name":"Benchmarking","score":0.5133000016212463},{"id":"https://openalex.org/keywords/nanoscopic-scale","display_name":"Nanoscopic scale","score":0.4339999854564667}],"concepts":[{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.6607000231742859},{"id":"https://openalex.org/C2777735758","wikidata":"https://www.wikidata.org/wiki/Q817765","display_name":"Path (computing)","level":2,"score":0.574400007724762},{"id":"https://openalex.org/C62611344","wikidata":"https://www.wikidata.org/wiki/Q1062658","display_name":"Node (physics)","level":2,"score":0.5561000108718872},{"id":"https://openalex.org/C99844830","wikidata":"https://www.wikidata.org/wiki/Q102441924","display_name":"Scaling","level":2,"score":0.5508999824523926},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5264999866485596},{"id":"https://openalex.org/C86251818","wikidata":"https://www.wikidata.org/wiki/Q816754","display_name":"Benchmarking","level":2,"score":0.5133000016212463},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.49239999055862427},{"id":"https://openalex.org/C45206210","wikidata":"https://www.wikidata.org/wiki/Q2415817","display_name":"Nanoscopic scale","level":2,"score":0.4339999854564667},{"id":"https://openalex.org/C2778755073","wikidata":"https://www.wikidata.org/wiki/Q10858537","display_name":"Scale (ratio)","level":2,"score":0.375900000333786},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.35929998755455017},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3476000130176544},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.3287999927997589},{"id":"https://openalex.org/C141400236","wikidata":"https://www.wikidata.org/wiki/Q1479544","display_name":"Nanoelectronics","level":2,"score":0.31940001249313354},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.29159998893737793},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2802000045776367},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.27149999141693115},{"id":"https://openalex.org/C2780009758","wikidata":"https://www.wikidata.org/wiki/Q6804172","display_name":"Measure (data warehouse)","level":2,"score":0.25040000677108765}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/vlsid68508.2026.00075","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vlsid68508.2026.00075","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2026 39th International Conference on VLSI Design & 25th International Conference on Embedded Systems (VLSID)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":18,"referenced_works":["https://openalex.org/W2008663782","https://openalex.org/W2032262202","https://openalex.org/W2116656110","https://openalex.org/W2117696652","https://openalex.org/W2130994017","https://openalex.org/W2140945954","https://openalex.org/W2141966815","https://openalex.org/W2141981815","https://openalex.org/W2153784824","https://openalex.org/W2161910747","https://openalex.org/W2290083393","https://openalex.org/W2772829183","https://openalex.org/W2946555777","https://openalex.org/W3015731122","https://openalex.org/W4377703175","https://openalex.org/W4377703829","https://openalex.org/W4404065976","https://openalex.org/W4413277287"],"related_works":[],"abstract_inverted_index":{"In":[0],"this":[1,57],"work,":[2],"we":[3,77],"investigate":[4],"the":[5],"key":[6,95],"challenges":[7,100],"that":[8,101],"arise":[9],"in":[10,119],"nanoscale":[11],"GaN":[12,31,108],"HEMTs":[13,32],"with":[14],"gate":[15],"lengths":[16],"down":[17],"to":[18],"20":[19],"nm":[20],"and":[21,40,46,70,81,89,98,116,122],"source/drain":[22],"access":[23],"spacings":[24],"as":[25,27,65],"low":[26],"10":[28],"nm.":[29],"As":[30],"scale":[33],"toward":[34],"advanced":[35],"technology":[36],"nodes":[37],"for":[38,87,105,113],"high-speed":[39],"high-frequency":[41],"applications,":[42],"understanding":[43],"their":[44],"reliability":[45,61,96],"physical":[47],"limits":[48],"becomes":[49],"critical.":[50],"Moving":[51],"beyond":[52],"conventional":[53],"RF":[54,71,90,123],"performance":[55,72,80,115],"benchmarks,":[56],"work":[58],"focusses":[59],"on":[60],"limiting":[62],"factors":[63],"such":[64],"short-channel":[66],"effects,":[67],"trapinduced":[68],"degradation,":[69,83],"degradation.":[73],"Using":[74],"numerical":[75],"simulations,":[76],"assess":[78],"device":[79],"transconductance":[82],"under":[84],"scaled":[85],"geometries":[86],"DC":[88,121],"operation.":[91],"The":[92],"findings":[93],"highlight":[94],"considerations":[97],"scaling":[99],"designers":[102],"should":[103],"account":[104],"when":[106],"evaluating":[107],"HEMT":[109],"miniaturization,":[110],"offering":[111],"guidance":[112],"balancing":[114],"long-term":[117],"stability":[118],"future":[120],"applications.":[124]},"counts_by_year":[],"updated_date":"2026-03-20T20:47:17.329874","created_date":"2026-03-18T00:00:00"}