{"id":"https://openalex.org/W2524730200","doi":"https://doi.org/10.1109/vlsic.2016.7573496","title":"A fully integrated GaN-based power IC including gate drivers for high-efficiency DC-DC Converters","display_name":"A fully integrated GaN-based power IC including gate drivers for high-efficiency DC-DC Converters","publication_year":2016,"publication_date":"2016-06-01","ids":{"openalex":"https://openalex.org/W2524730200","doi":"https://doi.org/10.1109/vlsic.2016.7573496","mag":"2524730200"},"language":"en","primary_location":{"id":"doi:10.1109/vlsic.2016.7573496","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vlsic.2016.7573496","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 IEEE Symposium on VLSI Circuits (VLSI-Circuits)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5068341355","display_name":"Shinji Ujita","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Shinji Ujita","raw_affiliation_strings":["Engineering Division, Automotive & Industrial Systems Company, Nagaokakyo-shi, Kyoto, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Engineering Division, Automotive & Industrial Systems Company, Nagaokakyo-shi, Kyoto, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5033871344","display_name":"Yusuke Kinoshita","orcid":"https://orcid.org/0000-0001-7681-2644"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Yusuke Kinoshita","raw_affiliation_strings":["Engineering Division, Automotive & Industrial Systems Company, Nagaokakyo-shi, Kyoto, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Engineering Division, Automotive & Industrial Systems Company, Nagaokakyo-shi, Kyoto, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5036034573","display_name":"Hidekazu Umeda","orcid":"https://orcid.org/0000-0002-0789-3521"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Hidekazu Umeda","raw_affiliation_strings":["Engineering Division, Automotive & Industrial Systems Company, Nagaokakyo-shi, Kyoto, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Engineering Division, Automotive & Industrial Systems Company, Nagaokakyo-shi, Kyoto, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109376614","display_name":"Tatsuo Morita","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Tatsuo Morita","raw_affiliation_strings":["Engineering Division, Automotive & Industrial Systems Company, Nagaokakyo-shi, Kyoto, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Engineering Division, Automotive & Industrial Systems Company, Nagaokakyo-shi, Kyoto, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5027949972","display_name":"Kazuhiro Kaibara","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Kazuhiro Kaibara","raw_affiliation_strings":["Engineering Division, Automotive & Industrial Systems Company, Nagaokakyo-shi, Kyoto, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Engineering Division, Automotive & Industrial Systems Company, Nagaokakyo-shi, Kyoto, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101808735","display_name":"Satoshi Tamura","orcid":"https://orcid.org/0000-0001-6916-4618"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Satoshi Tamura","raw_affiliation_strings":["Engineering Division, Automotive & Industrial Systems Company, Nagaokakyo-shi, Kyoto, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Engineering Division, Automotive & Industrial Systems Company, Nagaokakyo-shi, Kyoto, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109203606","display_name":"Masahiro Ishida","orcid":"https://orcid.org/0009-0000-7712-4966"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Masahiro Ishida","raw_affiliation_strings":["Engineering Division, Automotive & Industrial Systems Company, Nagaokakyo-shi, Kyoto, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Engineering Division, Automotive & Industrial Systems Company, Nagaokakyo-shi, Kyoto, Japan","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5077565266","display_name":"Tetsuzo Ueda","orcid":"https://orcid.org/0000-0003-3615-4354"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Tetsuzo Ueda","raw_affiliation_strings":["Engineering Division, Automotive & Industrial Systems Company, Nagaokakyo-shi, Kyoto, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Engineering Division, Automotive & Industrial Systems Company, Nagaokakyo-shi, Kyoto, Japan","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":8,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":2.9392,"has_fulltext":false,"cited_by_count":26,"citation_normalized_percentile":{"value":0.91158917,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":89,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"2"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9986000061035156,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.7308046221733093},{"id":"https://openalex.org/keywords/gate-driver","display_name":"Gate driver","score":0.6941127777099609},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.636391282081604},{"id":"https://openalex.org/keywords/converters","display_name":"Converters","score":0.559910774230957},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5434934496879578},{"id":"https://openalex.org/keywords/interconnection","display_name":"Interconnection","score":0.534572184085846},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.48773226141929626},{"id":"https://openalex.org/keywords/power-semiconductor-device","display_name":"Power semiconductor device","score":0.46639177203178406},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.46576905250549316},{"id":"https://openalex.org/keywords/passivation","display_name":"Passivation","score":0.43106862902641296},{"id":"https://openalex.org/keywords/power-electronics","display_name":"Power electronics","score":0.41765671968460083},{"id":"https://openalex.org/keywords/integrated-circuit","display_name":"Integrated circuit","score":0.41744935512542725},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.4134692847728729},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.3645482063293457},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.2557781934738159},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.22978225350379944},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.11701947450637817},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.10036855936050415},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.08011597394943237},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.06749802827835083}],"concepts":[{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.7308046221733093},{"id":"https://openalex.org/C179141203","wikidata":"https://www.wikidata.org/wiki/Q1495747","display_name":"Gate driver","level":3,"score":0.6941127777099609},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.636391282081604},{"id":"https://openalex.org/C2778422915","wikidata":"https://www.wikidata.org/wiki/Q10302051","display_name":"Converters","level":3,"score":0.559910774230957},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5434934496879578},{"id":"https://openalex.org/C123745756","wikidata":"https://www.wikidata.org/wiki/Q1665949","display_name":"Interconnection","level":2,"score":0.534572184085846},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.48773226141929626},{"id":"https://openalex.org/C129014197","wikidata":"https://www.wikidata.org/wiki/Q906544","display_name":"Power semiconductor device","level":3,"score":0.46639177203178406},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.46576905250549316},{"id":"https://openalex.org/C33574316","wikidata":"https://www.wikidata.org/wiki/Q917260","display_name":"Passivation","level":3,"score":0.43106862902641296},{"id":"https://openalex.org/C178911571","wikidata":"https://www.wikidata.org/wiki/Q593143","display_name":"Power electronics","level":3,"score":0.41765671968460083},{"id":"https://openalex.org/C530198007","wikidata":"https://www.wikidata.org/wiki/Q80831","display_name":"Integrated circuit","level":2,"score":0.41744935512542725},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.4134692847728729},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3645482063293457},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.2557781934738159},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.22978225350379944},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.11701947450637817},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.10036855936050415},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.08011597394943237},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.06749802827835083},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/vlsic.2016.7573496","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vlsic.2016.7573496","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 IEEE Symposium on VLSI Circuits (VLSI-Circuits)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.8299999833106995,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":5,"referenced_works":["https://openalex.org/W1986651112","https://openalex.org/W2016632032","https://openalex.org/W2082022477","https://openalex.org/W2114902077","https://openalex.org/W4246876672"],"related_works":["https://openalex.org/W2365691020","https://openalex.org/W274769908","https://openalex.org/W2184546999","https://openalex.org/W3034942151","https://openalex.org/W2887683729","https://openalex.org/W4240017343","https://openalex.org/W4386159450","https://openalex.org/W3175250875","https://openalex.org/W1535176231","https://openalex.org/W3081012306"],"abstract_inverted_index":{"In":[0],"this":[1],"paper,":[2],"we":[3],"present":[4],"a":[5,15,28,62,97,122],"state-of-the-art":[6],"integrated":[7],"GaN":[8],"power":[9,29,37,144],"IC":[10,32,50,119],"capable":[11],"of":[12,27,34,74,77,92,135],"operating":[13],"in":[14,48,141],"high":[16,127],"frequency":[17,128],"(MHz)":[18],"regime.":[19],"This":[20],"realizes":[21],"system":[22],"size":[23],"reduction,":[24],"60%":[25],"maximum,":[26],"IC.":[30],"The":[31,45,118],"consists":[33],"two":[35,41],"output":[36],"transistors":[38,55,94],"(PT)":[39],"and":[40,59,61],"gate":[42,53],"drivers":[43],"(GD).":[44],"key":[46],"devices":[47],"the":[49,93,133],"are":[51],"normally-off":[52],"injection":[54],"(GITs)":[56],"for":[57,69],"PT":[58],"GD":[60],"normally-on":[63],"hetero-junction":[64],"field":[65],"effect":[66],"transistor":[67],"(HFET)":[68],"GD.":[70],"Novel":[71],"local":[72],"control":[73],"carrier":[75],"concentration":[76],"an":[78,86],"identical":[79],"2":[80],"dimensional":[81],"electron":[82],"gas":[83],"(2DEG)":[84],"at":[85],"AlGaN/GaN":[87],"interface":[88],"which":[89],"made":[90],"integration":[91],"with":[95],"such":[96],"large":[98],"threshold":[99],"voltage":[100],"difference":[101],"possible":[102],"is":[103,115],"described.":[104,117],"A":[105],"specially":[106],"developed":[107],"post-passivation":[108],"interconnection":[109],"process":[110],"giving":[111],"low":[112],"parasitic":[113],"components":[114],"also":[116],"applied":[120],"to":[121,138],"12V-1.8V":[123],"DC-DC":[124],"converter":[125],"shows":[126],"switching":[129],"operation":[130],"well":[131],"beyond":[132],"limit":[134],"Si":[136],"pointing":[137],"future":[139],"improvement":[140],"consumer":[142],"electronics":[143],"supply":[145],"systems.":[146]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":3},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":2},{"year":2021,"cited_by_count":7},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":7},{"year":2018,"cited_by_count":2},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}