{"id":"https://openalex.org/W2150179059","doi":"https://doi.org/10.1109/vlsic.2014.6858411","title":"A 512-kb 1-GHz 28-nm partially write-assisted dual-port SRAM with self-adjustable negative bias bitline","display_name":"A 512-kb 1-GHz 28-nm partially write-assisted dual-port SRAM with self-adjustable negative bias bitline","publication_year":2014,"publication_date":"2014-06-01","ids":{"openalex":"https://openalex.org/W2150179059","doi":"https://doi.org/10.1109/vlsic.2014.6858411","mag":"2150179059"},"language":"en","primary_location":{"id":"doi:10.1109/vlsic.2014.6858411","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vlsic.2014.6858411","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 Symposium on VLSI Circuits Digest of Technical Papers","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5060197046","display_name":"Shinji Tanaka","orcid":"https://orcid.org/0000-0002-7718-3453"},"institutions":[{"id":"https://openalex.org/I4210153176","display_name":"Renesas Electronics (Japan)","ror":"https://ror.org/058wb7691","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210153176"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Shinji Tanaka","raw_affiliation_strings":["Renesas Electronics, 5-20-1, Josuihon-cho, Kodaira, Tokyo, 187-8588, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Renesas Electronics, 5-20-1, Josuihon-cho, Kodaira, Tokyo, 187-8588, Japan","institution_ids":["https://openalex.org/I4210153176"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102538016","display_name":"Yuichiro Ishii","orcid":null},"institutions":[{"id":"https://openalex.org/I4210153176","display_name":"Renesas Electronics (Japan)","ror":"https://ror.org/058wb7691","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210153176"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Yuichiro Ishii","raw_affiliation_strings":["Renesas Electronics, 5-20-1, Josuihon-cho, Kodaira, Tokyo, 187-8588, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Renesas Electronics, 5-20-1, Josuihon-cho, Kodaira, Tokyo, 187-8588, Japan","institution_ids":["https://openalex.org/I4210153176"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5088276903","display_name":"Makoto Yabuuchi","orcid":"https://orcid.org/0000-0003-1515-4726"},"institutions":[{"id":"https://openalex.org/I4210153176","display_name":"Renesas Electronics (Japan)","ror":"https://ror.org/058wb7691","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210153176"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Makoto Yabuuchi","raw_affiliation_strings":["Renesas Electronics, 5-20-1, Josuihon-cho, Kodaira, Tokyo, 187-8588, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Renesas Electronics, 5-20-1, Josuihon-cho, Kodaira, Tokyo, 187-8588, Japan","institution_ids":["https://openalex.org/I4210153176"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109359160","display_name":"Toshiaki Sano","orcid":null},"institutions":[{"id":"https://openalex.org/I4210153176","display_name":"Renesas Electronics (Japan)","ror":"https://ror.org/058wb7691","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210153176"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Toshiaki Sano","raw_affiliation_strings":["Renesas System Design, 5-20-1, Josuihon-cho, Kodaira, Tokyo, 187-8588, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Renesas System Design, 5-20-1, Josuihon-cho, Kodaira, Tokyo, 187-8588, Japan","institution_ids":["https://openalex.org/I4210153176"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101678756","display_name":"Koji Tanaka","orcid":"https://orcid.org/0000-0002-0281-9816"},"institutions":[{"id":"https://openalex.org/I4210153176","display_name":"Renesas Electronics (Japan)","ror":"https://ror.org/058wb7691","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210153176"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Koji Tanaka","raw_affiliation_strings":["Renesas Electronics, 5-20-1, Josuihon-cho, Kodaira, Tokyo, 187-8588, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Renesas Electronics, 5-20-1, Josuihon-cho, Kodaira, Tokyo, 187-8588, Japan","institution_ids":["https://openalex.org/I4210153176"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5041951103","display_name":"Yasumasa Tsukamoto","orcid":"https://orcid.org/0000-0002-0963-6940"},"institutions":[{"id":"https://openalex.org/I4210153176","display_name":"Renesas Electronics (Japan)","ror":"https://ror.org/058wb7691","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210153176"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Yasumasa Tsukamoto","raw_affiliation_strings":["Renesas Electronics, 5-20-1, Josuihon-cho, Kodaira, Tokyo, 187-8588, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Renesas Electronics, 5-20-1, Josuihon-cho, Kodaira, Tokyo, 187-8588, Japan","institution_ids":["https://openalex.org/I4210153176"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5047952713","display_name":"Koji Nii","orcid":"https://orcid.org/0000-0002-9986-5308"},"institutions":[{"id":"https://openalex.org/I4210153176","display_name":"Renesas Electronics (Japan)","ror":"https://ror.org/058wb7691","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210153176"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Koji Nii","raw_affiliation_strings":["Renesas Electronics, 5-20-1, Josuihon-cho, Kodaira, Tokyo, 187-8588, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Renesas Electronics, 5-20-1, Josuihon-cho, Kodaira, Tokyo, 187-8588, Japan","institution_ids":["https://openalex.org/I4210153176"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5102783989","display_name":"Hirotoshi Sato","orcid":"https://orcid.org/0000-0003-4489-6569"},"institutions":[{"id":"https://openalex.org/I4210153176","display_name":"Renesas Electronics (Japan)","ror":"https://ror.org/058wb7691","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210153176"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hirotoshi Sato","raw_affiliation_strings":["Renesas Electronics, 5-20-1, Josuihon-cho, Kodaira, Tokyo, 187-8588, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Renesas Electronics, 5-20-1, Josuihon-cho, Kodaira, Tokyo, 187-8588, Japan","institution_ids":["https://openalex.org/I4210153176"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":8,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":1.2776,"has_fulltext":false,"cited_by_count":11,"citation_normalized_percentile":{"value":0.83553099,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":"115","issue":"6","first_page":"1","last_page":"2"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.9105057716369629},{"id":"https://openalex.org/keywords/overhead","display_name":"Overhead (engineering)","score":0.5796151161193848},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.5516770482063293},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5485950708389282},{"id":"https://openalex.org/keywords/chip","display_name":"Chip","score":0.5085045099258423},{"id":"https://openalex.org/keywords/port","display_name":"Port (circuit theory)","score":0.5021023750305176},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.4527589678764343},{"id":"https://openalex.org/keywords/margin","display_name":"Margin (machine learning)","score":0.45125874876976013},{"id":"https://openalex.org/keywords/macro","display_name":"Macro","score":0.4305475950241089},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.42939549684524536},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.38229143619537354},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.381277859210968},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3227456510066986},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.2765392065048218},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.19773265719413757},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.15775775909423828},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.12307566404342651}],"concepts":[{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.9105057716369629},{"id":"https://openalex.org/C2779960059","wikidata":"https://www.wikidata.org/wiki/Q7113681","display_name":"Overhead (engineering)","level":2,"score":0.5796151161193848},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.5516770482063293},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5485950708389282},{"id":"https://openalex.org/C165005293","wikidata":"https://www.wikidata.org/wiki/Q1074500","display_name":"Chip","level":2,"score":0.5085045099258423},{"id":"https://openalex.org/C32802771","wikidata":"https://www.wikidata.org/wiki/Q2443617","display_name":"Port (circuit theory)","level":2,"score":0.5021023750305176},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.4527589678764343},{"id":"https://openalex.org/C774472","wikidata":"https://www.wikidata.org/wiki/Q6760393","display_name":"Margin (machine learning)","level":2,"score":0.45125874876976013},{"id":"https://openalex.org/C166955791","wikidata":"https://www.wikidata.org/wiki/Q629579","display_name":"Macro","level":2,"score":0.4305475950241089},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.42939549684524536},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.38229143619537354},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.381277859210968},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3227456510066986},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.2765392065048218},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.19773265719413757},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.15775775909423828},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.12307566404342651},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.0},{"id":"https://openalex.org/C119857082","wikidata":"https://www.wikidata.org/wiki/Q2539","display_name":"Machine learning","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/vlsic.2014.6858411","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vlsic.2014.6858411","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 Symposium on VLSI Circuits Digest of Technical Papers","raw_type":"proceedings-article"},{"id":"mag:2896654432","is_oa":false,"landing_page_url":"https://www.ieice.org/ken/paper/20150416ABz8/eng/","pdf_url":null,"source":{"id":"https://openalex.org/S4306512848","display_name":"IEICE Technical Report; IEICE Tech. Rep.","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"journal"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":null,"raw_source_name":"IEICE Technical Report; IEICE Tech. Rep.","raw_type":null}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.8600000143051147}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2030816003","https://openalex.org/W4239992647","https://openalex.org/W2150013480","https://openalex.org/W1554458299","https://openalex.org/W2076325756","https://openalex.org/W81423522","https://openalex.org/W1509860481","https://openalex.org/W3151633427","https://openalex.org/W2488264085","https://openalex.org/W4386206750"],"abstract_inverted_index":{"We":[0],"propose":[1],"a":[2,86],"partially":[3],"write-assisted":[4],"two":[5],"read/write":[6],"dual-port":[7],"(DP)":[8],"SRAM":[9,58],"in":[10],"28-nm":[11,63],"technology.":[12],"Our":[13],"write-assist":[14],"circuit":[15],"with":[16,40,48],"metal-coupled":[17],"capacitance":[18],"can":[19,45],"generate":[20],"negative":[21],"bitline":[22],"bias":[23],"which":[24,67],"is":[25,60],"flexibly":[26],"adjustable":[27],"to":[28,38,85],"any":[29],"bit-word":[30],"configurations.":[31],"By":[32],"effectively":[33],"applying":[34],"assist":[35],"biases":[36],"only":[37],"sub-blocks":[39],"margin-less":[41],"bits,":[42],"power":[43,82],"overhead":[44],"be":[46],"reduced":[47],"Vmin":[49,78],"improved.":[50],"A":[51],"test":[52],"chip":[53],"including":[54],"proposed":[55],"512-kb":[56],"DP":[57],"macro":[59],"designed":[61],"using":[62],"HKMG":[64],"technology,":[65],"from":[66],"we":[68],"successfully":[69],"observed":[70],"1-GHz":[71],"operation":[72],"at":[73],"1.0":[74],"V,":[75],"190":[76],"mV":[77],"improvement,":[79],"and":[80],"21%":[81],"reduction":[83],"compared":[84],"conventional":[87],"assist.":[88]},"counts_by_year":[{"year":2025,"cited_by_count":3},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2017,"cited_by_count":3},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":2}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}