{"id":"https://openalex.org/W2159515198","doi":"https://doi.org/10.1109/vlsic.2014.6858367","title":"Design technologies for a 1.2V 2.4Gb/s/pin high capacity DDR4 SDRAM with TSVs","display_name":"Design technologies for a 1.2V 2.4Gb/s/pin high capacity DDR4 SDRAM with TSVs","publication_year":2014,"publication_date":"2014-06-01","ids":{"openalex":"https://openalex.org/W2159515198","doi":"https://doi.org/10.1109/vlsic.2014.6858367","mag":"2159515198"},"language":"en","primary_location":{"id":"doi:10.1109/vlsic.2014.6858367","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vlsic.2014.6858367","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 Symposium on VLSI Circuits Digest of Technical Papers","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5077295565","display_name":"Reum Oh","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Reum Oh","raw_affiliation_strings":["Samsung Electronics, Suwon, Gyeonggi-do, KR"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics, Suwon, Gyeonggi-do, KR","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101464519","display_name":"Byung-Hyun Lee","orcid":"https://orcid.org/0000-0002-7117-6797"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Byunghyun Lee","raw_affiliation_strings":["Samsung Electronics, Suwon, Gyeonggi-do, KR"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics, Suwon, Gyeonggi-do, KR","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5055422613","display_name":"Sangwoong Shin","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sang-Woong Shin","raw_affiliation_strings":["Samsung Electronics, Suwon, Gyeonggi-do, KR"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics, Suwon, Gyeonggi-do, KR","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5067315298","display_name":"Wonil Bae","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Wonil Bae","raw_affiliation_strings":["Samsung Electronics, Suwon, Gyeonggi-do, KR"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics, Suwon, Gyeonggi-do, KR","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100897826","display_name":"Hundai Choi","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hundai Choi","raw_affiliation_strings":["Samsung Electronics, Suwon, Gyeonggi-do, KR"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics, Suwon, Gyeonggi-do, KR","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5057752465","display_name":"Indal Song","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Indal Song","raw_affiliation_strings":["Samsung Electronics, Suwon, Gyeonggi-do, KR"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics, Suwon, Gyeonggi-do, KR","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102965398","display_name":"Yun-Sang Lee","orcid":"https://orcid.org/0000-0001-7076-7037"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Yun-Sang Lee","raw_affiliation_strings":["Samsung Electronics, Suwon, Gyeonggi-do, KR"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics, Suwon, Gyeonggi-do, KR","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5039689149","display_name":"Jung\u2010Hwan Choi","orcid":"https://orcid.org/0000-0002-3140-6789"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jung-Hwan Choi","raw_affiliation_strings":["Samsung Electronics, Suwon, Gyeonggi-do, KR"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics, Suwon, Gyeonggi-do, KR","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5089492937","display_name":"Chi-Wook Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Chi-Wook Kim","raw_affiliation_strings":["Samsung Electronics, Suwon, Gyeonggi-do, KR"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics, Suwon, Gyeonggi-do, KR","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110577982","display_name":"Seong-Jin Jang","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Seong-Jin Jang","raw_affiliation_strings":["Samsung Electronics, Suwon, Gyeonggi-do, KR"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics, Suwon, Gyeonggi-do, KR","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5110755494","display_name":"Joo Sun Choi","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Joo Sun Choi","raw_affiliation_strings":["Samsung Electronics, Suwon, Gyeonggi-do, KR"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics, Suwon, Gyeonggi-do, KR","institution_ids":["https://openalex.org/I2250650973"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I2250650973"],"apc_list":null,"apc_paid":null,"fwci":1.0647,"has_fulltext":false,"cited_by_count":12,"citation_normalized_percentile":{"value":0.81409254,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"2"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9944000244140625,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":0.9866999983787537,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/dram","display_name":"Dram","score":0.7944285869598389},{"id":"https://openalex.org/keywords/power-consumption","display_name":"Power consumption","score":0.498180627822876},{"id":"https://openalex.org/keywords/cas-latency","display_name":"CAS latency","score":0.47637030482292175},{"id":"https://openalex.org/keywords/chip","display_name":"Chip","score":0.46582362055778503},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.44799676537513733},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4275372326374054},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.39650624990463257},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3777352273464203},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.35407203435897827},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.34544140100479126},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2197260558605194},{"id":"https://openalex.org/keywords/semiconductor-memory","display_name":"Semiconductor memory","score":0.1676170527935028},{"id":"https://openalex.org/keywords/memory-controller","display_name":"Memory controller","score":0.13813117146492004}],"concepts":[{"id":"https://openalex.org/C7366592","wikidata":"https://www.wikidata.org/wiki/Q1255620","display_name":"Dram","level":2,"score":0.7944285869598389},{"id":"https://openalex.org/C2984118289","wikidata":"https://www.wikidata.org/wiki/Q29954","display_name":"Power consumption","level":3,"score":0.498180627822876},{"id":"https://openalex.org/C189930140","wikidata":"https://www.wikidata.org/wiki/Q1112878","display_name":"CAS latency","level":4,"score":0.47637030482292175},{"id":"https://openalex.org/C165005293","wikidata":"https://www.wikidata.org/wiki/Q1074500","display_name":"Chip","level":2,"score":0.46582362055778503},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.44799676537513733},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4275372326374054},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.39650624990463257},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3777352273464203},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.35407203435897827},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.34544140100479126},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2197260558605194},{"id":"https://openalex.org/C98986596","wikidata":"https://www.wikidata.org/wiki/Q1143031","display_name":"Semiconductor memory","level":2,"score":0.1676170527935028},{"id":"https://openalex.org/C100800780","wikidata":"https://www.wikidata.org/wiki/Q1175867","display_name":"Memory controller","level":3,"score":0.13813117146492004},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/vlsic.2014.6858367","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vlsic.2014.6858367","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 Symposium on VLSI Circuits Digest of Technical Papers","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.8799999952316284,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":3,"referenced_works":["https://openalex.org/W2071003187","https://openalex.org/W2095867783","https://openalex.org/W2107304970"],"related_works":["https://openalex.org/W4293430534","https://openalex.org/W2342813629","https://openalex.org/W3150934690","https://openalex.org/W4297812927","https://openalex.org/W2335743642","https://openalex.org/W2800412005","https://openalex.org/W1976244802","https://openalex.org/W1992487929","https://openalex.org/W2083934844","https://openalex.org/W1596579276"],"abstract_inverted_index":{"For":[0],"the":[1,40,48,54,82],"demand":[2],"of":[3,42,50,94],"sever":[4],"systems":[5],"with":[6,18,34,38,98],"high":[7,9],"performance,":[8],"density":[10],"and":[11,53,81],"low":[12],"power":[13,89],"consumption,":[14],"3-D":[15],"DDR4":[16,96],"SDRAM":[17,37,97],"TSVs":[19,43,99],"was":[20],"developed.":[21],"In":[22],"order":[23],"to":[24,77,87,102],"achieve":[25],"higher":[26],"data":[27],"rate":[28],"at":[29,104],"lower":[30],"voltage":[31],"in":[32],"comparison":[33],"precedent":[35],"DDR3":[36],"TSVs,":[39],"placements":[41],"have":[44],"been":[45],"optimized":[46],"without":[47],"penalty":[49],"chip":[51],"size":[52],"calibration":[55],"method":[56,71],"for":[57,72],"reducing":[58],"process":[59],"mismatch":[60],"between":[61],"stacked":[62,73],"DRAM":[63],"chips":[64],"is":[65,75,85,100],"proposed.":[66],"Additionally,":[67],"new":[68,95],"cell":[69],"test":[70],"dies":[74],"adopted":[76],"keep":[78],"costs":[79],"down":[80],"skewed":[83],"self-refresh":[84],"proposed":[86],"reduce":[88],"noise.":[90],"The":[91],"IO":[92],"speed":[93],"increased":[101],"2.4Gb/s":[103],"1.2V.":[105]},"counts_by_year":[{"year":2022,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":3},{"year":2018,"cited_by_count":2},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":3},{"year":2015,"cited_by_count":1}],"updated_date":"2026-06-26T08:34:08.712188","created_date":"2025-10-10T00:00:00"}