{"id":"https://openalex.org/W4308644003","doi":"https://doi.org/10.1109/vlsi-soc54400.2022.9939626","title":"Cross-layer FeFET Reliability Modeling for Robust Hyperdimensional Computing","display_name":"Cross-layer FeFET Reliability Modeling for Robust Hyperdimensional Computing","publication_year":2022,"publication_date":"2022-10-03","ids":{"openalex":"https://openalex.org/W4308644003","doi":"https://doi.org/10.1109/vlsi-soc54400.2022.9939626"},"language":"en","primary_location":{"id":"doi:10.1109/vlsi-soc54400.2022.9939626","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vlsi-soc54400.2022.9939626","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IFIP/IEEE 30th International Conference on Very Large Scale Integration (VLSI-SoC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101855878","display_name":"Shubham Kumar","orcid":"https://orcid.org/0000-0003-4228-9802"},"institutions":[{"id":"https://openalex.org/I100066346","display_name":"University of Stuttgart","ror":"https://ror.org/04vnq7t77","country_code":"DE","type":"education","lineage":["https://openalex.org/I100066346"]},{"id":"https://openalex.org/I94234084","display_name":"Indian Institute of Technology Kanpur","ror":"https://ror.org/05pjsgx75","country_code":"IN","type":"education","lineage":["https://openalex.org/I94234084"]}],"countries":["DE","IN"],"is_corresponding":true,"raw_author_name":"Shubham Kumar","raw_affiliation_strings":["University of Stuttgart,Chair of Semiconductor Test and Reliability (STAR),Stuttgart,Germany","Chair of Semiconductor Test and Reliability (STAR), University of Stuttgart, Stuttgart, Germany","Department of Electrical Engineering, Indian Institute of Technology, Kanpur, India"],"affiliations":[{"raw_affiliation_string":"University of Stuttgart,Chair of Semiconductor Test and Reliability (STAR),Stuttgart,Germany","institution_ids":["https://openalex.org/I100066346"]},{"raw_affiliation_string":"Chair of Semiconductor Test and Reliability (STAR), University of Stuttgart, Stuttgart, Germany","institution_ids":["https://openalex.org/I100066346"]},{"raw_affiliation_string":"Department of Electrical Engineering, Indian Institute of Technology, Kanpur, India","institution_ids":["https://openalex.org/I94234084"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5083027686","display_name":"Swetaki Chatterjee","orcid":"https://orcid.org/0000-0002-2550-9626"},"institutions":[{"id":"https://openalex.org/I100066346","display_name":"University of Stuttgart","ror":"https://ror.org/04vnq7t77","country_code":"DE","type":"education","lineage":["https://openalex.org/I100066346"]},{"id":"https://openalex.org/I94234084","display_name":"Indian Institute of Technology Kanpur","ror":"https://ror.org/05pjsgx75","country_code":"IN","type":"education","lineage":["https://openalex.org/I94234084"]}],"countries":["DE","IN"],"is_corresponding":false,"raw_author_name":"Swetaki Chatterjee","raw_affiliation_strings":["University of Stuttgart,Chair of Semiconductor Test and Reliability (STAR),Stuttgart,Germany","Department of Electrical Engineering, Indian Institute of Technology, Kanpur, India","Chair of Semiconductor Test and Reliability (STAR), University of Stuttgart, Stuttgart, Germany"],"affiliations":[{"raw_affiliation_string":"University of Stuttgart,Chair of Semiconductor Test and Reliability (STAR),Stuttgart,Germany","institution_ids":["https://openalex.org/I100066346"]},{"raw_affiliation_string":"Department of Electrical Engineering, Indian Institute of Technology, Kanpur, India","institution_ids":["https://openalex.org/I94234084"]},{"raw_affiliation_string":"Chair of Semiconductor Test and Reliability (STAR), University of Stuttgart, Stuttgart, Germany","institution_ids":["https://openalex.org/I100066346"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5054764590","display_name":"Simon Thomann","orcid":"https://orcid.org/0000-0002-7902-9353"},"institutions":[{"id":"https://openalex.org/I100066346","display_name":"University of Stuttgart","ror":"https://ror.org/04vnq7t77","country_code":"DE","type":"education","lineage":["https://openalex.org/I100066346"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Simon Thomann","raw_affiliation_strings":["University of Stuttgart,Chair of Semiconductor Test and Reliability (STAR),Stuttgart,Germany","Chair of Semiconductor Test and Reliability (STAR), University of Stuttgart, Stuttgart, Germany"],"affiliations":[{"raw_affiliation_string":"University of Stuttgart,Chair of Semiconductor Test and Reliability (STAR),Stuttgart,Germany","institution_ids":["https://openalex.org/I100066346"]},{"raw_affiliation_string":"Chair of Semiconductor Test and Reliability (STAR), University of Stuttgart, Stuttgart, Germany","institution_ids":["https://openalex.org/I100066346"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5064095385","display_name":"Paul R. Gen\u00dfler","orcid":"https://orcid.org/0000-0002-7175-7284"},"institutions":[{"id":"https://openalex.org/I100066346","display_name":"University of Stuttgart","ror":"https://ror.org/04vnq7t77","country_code":"DE","type":"education","lineage":["https://openalex.org/I100066346"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Paul R. Genssler","raw_affiliation_strings":["University of Stuttgart,Chair of Semiconductor Test and Reliability (STAR),Stuttgart,Germany","Chair of Semiconductor Test and Reliability (STAR), University of Stuttgart, Stuttgart, Germany"],"affiliations":[{"raw_affiliation_string":"University of Stuttgart,Chair of Semiconductor Test and Reliability (STAR),Stuttgart,Germany","institution_ids":["https://openalex.org/I100066346"]},{"raw_affiliation_string":"Chair of Semiconductor Test and Reliability (STAR), University of Stuttgart, Stuttgart, Germany","institution_ids":["https://openalex.org/I100066346"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5077371510","display_name":"Yogesh Singh Chauhan","orcid":"https://orcid.org/0000-0002-3356-8917"},"institutions":[{"id":"https://openalex.org/I94234084","display_name":"Indian Institute of Technology Kanpur","ror":"https://ror.org/05pjsgx75","country_code":"IN","type":"education","lineage":["https://openalex.org/I94234084"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Yogesh Singh Chauhan","raw_affiliation_strings":["Indian Institute of Technology,Department of Electrical Engineering,Kanpur,India","Department of Electrical Engineering, Indian Institute of Technology, Kanpur, India"],"affiliations":[{"raw_affiliation_string":"Indian Institute of Technology,Department of Electrical Engineering,Kanpur,India","institution_ids":["https://openalex.org/I94234084"]},{"raw_affiliation_string":"Department of Electrical Engineering, Indian Institute of Technology, Kanpur, India","institution_ids":["https://openalex.org/I94234084"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5059133190","display_name":"Hussam Amrouch","orcid":"https://orcid.org/0000-0002-5649-3102"},"institutions":[{"id":"https://openalex.org/I100066346","display_name":"University of Stuttgart","ror":"https://ror.org/04vnq7t77","country_code":"DE","type":"education","lineage":["https://openalex.org/I100066346"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Hussam Amrouch","raw_affiliation_strings":["University of Stuttgart,Chair of Semiconductor Test and Reliability (STAR),Stuttgart,Germany","Chair of Semiconductor Test and Reliability (STAR), University of Stuttgart, Stuttgart, Germany"],"affiliations":[{"raw_affiliation_string":"University of Stuttgart,Chair of Semiconductor Test and Reliability (STAR),Stuttgart,Germany","institution_ids":["https://openalex.org/I100066346"]},{"raw_affiliation_string":"Chair of Semiconductor Test and Reliability (STAR), University of Stuttgart, Stuttgart, Germany","institution_ids":["https://openalex.org/I100066346"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":6,"corresponding_author_ids":["https://openalex.org/A5101855878"],"corresponding_institution_ids":["https://openalex.org/I100066346","https://openalex.org/I94234084"],"apc_list":null,"apc_paid":null,"fwci":1.2805,"has_fulltext":false,"cited_by_count":14,"citation_normalized_percentile":{"value":0.79271531,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":95,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"6"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10107","display_name":"Ferroelectric and Piezoelectric Materials","score":0.9968000054359436,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.6057471036911011},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5978525280952454},{"id":"https://openalex.org/keywords/metric","display_name":"Metric (unit)","score":0.5619311928749084},{"id":"https://openalex.org/keywords/hamming-code","display_name":"Hamming code","score":0.5581729412078857},{"id":"https://openalex.org/keywords/hamming-distance","display_name":"Hamming distance","score":0.5527297258377075},{"id":"https://openalex.org/keywords/similarity","display_name":"Similarity (geometry)","score":0.46499529480934143},{"id":"https://openalex.org/keywords/algorithm","display_name":"Algorithm","score":0.4440898597240448},{"id":"https://openalex.org/keywords/circuit-reliability","display_name":"Circuit reliability","score":0.41576915979385376},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.41419917345046997},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.38450220227241516},{"id":"https://openalex.org/keywords/artificial-intelligence","display_name":"Artificial intelligence","score":0.3147464096546173},{"id":"https://openalex.org/keywords/block-code","display_name":"Block code","score":0.19877052307128906},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.18576812744140625},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1644899547100067},{"id":"https://openalex.org/keywords/decoding-methods","display_name":"Decoding methods","score":0.15665125846862793},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.10872748494148254},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.10525244474411011}],"concepts":[{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.6057471036911011},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5978525280952454},{"id":"https://openalex.org/C176217482","wikidata":"https://www.wikidata.org/wiki/Q860554","display_name":"Metric (unit)","level":2,"score":0.5619311928749084},{"id":"https://openalex.org/C73150493","wikidata":"https://www.wikidata.org/wiki/Q853922","display_name":"Hamming code","level":4,"score":0.5581729412078857},{"id":"https://openalex.org/C193319292","wikidata":"https://www.wikidata.org/wiki/Q272172","display_name":"Hamming distance","level":2,"score":0.5527297258377075},{"id":"https://openalex.org/C103278499","wikidata":"https://www.wikidata.org/wiki/Q254465","display_name":"Similarity (geometry)","level":3,"score":0.46499529480934143},{"id":"https://openalex.org/C11413529","wikidata":"https://www.wikidata.org/wiki/Q8366","display_name":"Algorithm","level":1,"score":0.4440898597240448},{"id":"https://openalex.org/C2778309119","wikidata":"https://www.wikidata.org/wiki/Q5121614","display_name":"Circuit reliability","level":4,"score":0.41576915979385376},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.41419917345046997},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.38450220227241516},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.3147464096546173},{"id":"https://openalex.org/C157125643","wikidata":"https://www.wikidata.org/wiki/Q884707","display_name":"Block code","level":3,"score":0.19877052307128906},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.18576812744140625},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1644899547100067},{"id":"https://openalex.org/C57273362","wikidata":"https://www.wikidata.org/wiki/Q576722","display_name":"Decoding methods","level":2,"score":0.15665125846862793},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.10872748494148254},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.10525244474411011},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C115961682","wikidata":"https://www.wikidata.org/wiki/Q860623","display_name":"Image (mathematics)","level":2,"score":0.0},{"id":"https://openalex.org/C21547014","wikidata":"https://www.wikidata.org/wiki/Q1423657","display_name":"Operations management","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/vlsi-soc54400.2022.9939626","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vlsi-soc54400.2022.9939626","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IFIP/IEEE 30th International Conference on Very Large Scale Integration (VLSI-SoC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":21,"referenced_works":["https://openalex.org/W2017926762","https://openalex.org/W2291078588","https://openalex.org/W2906313120","https://openalex.org/W2988640543","https://openalex.org/W2999443823","https://openalex.org/W3032819016","https://openalex.org/W3035768999","https://openalex.org/W3038698523","https://openalex.org/W3039362986","https://openalex.org/W3162815471","https://openalex.org/W3167846368","https://openalex.org/W3183791462","https://openalex.org/W3186271703","https://openalex.org/W3216271746","https://openalex.org/W4212770221","https://openalex.org/W4212816501","https://openalex.org/W4226199505","https://openalex.org/W4283713746","https://openalex.org/W4288064472","https://openalex.org/W4312054642","https://openalex.org/W6847506457"],"related_works":["https://openalex.org/W2943247777","https://openalex.org/W2740543340","https://openalex.org/W2371167013","https://openalex.org/W1582340598","https://openalex.org/W1541021634","https://openalex.org/W2794545997","https://openalex.org/W2584980534","https://openalex.org/W2182731056","https://openalex.org/W66917582","https://openalex.org/W1600949677"],"abstract_inverted_index":{"Hyperdimensional":[0],"computing":[1,46,71,105],"(HDC)":[2],"is":[3,137,149,180],"an":[4,67,93],"emerging":[5],"learning":[6],"paradigm":[7],"that":[8],"has":[9,63],"gained":[10],"a":[11,47,154,192,205],"lot":[12],"of":[13,120,124,135,165,186,189,208],"attention":[14],"due":[15],"to":[16,19,31,99,114,161,182],"its":[17],"ability":[18],"train":[20],"with":[21,191,204],"fewer":[22],"data,":[23],"lightweight":[24],"implementation,":[25],"and":[26,116,128,157],"resiliency":[27],"against":[28],"errors.":[29],"Similar":[30],"the":[32,78,84,104,112,145,163,169,177,184],"brain,":[33],"HDC":[34,86,102,190],"can":[35],"learn":[36],"patterns":[37],"in":[38,77,151,201],"one":[39],"iteration":[40],"from":[41,108],"small":[42],"training":[43],"data":[44],"by":[45],"similarity":[48,73],"metric":[49],"such":[50],"as":[51,66],"Hamming":[52,174],"distance.":[53],"Ferroelectric":[54],"Field-Effect-Transistor":[55],"(FeFET)":[56],"based":[57],"Ternary":[58],"Content":[59],"Addressable":[60],"Memory":[61],"(TCAM)":[62],"been":[64],"demonstrated":[65],"excellent":[68],"candi-date":[69],"for":[70,172],"this":[72,89],"metric.":[74],"However,":[75],"variations":[76],"underlying":[79],"ferroelectric":[80,125],"transistor":[81,109,166],"does":[82],"impact":[83],"reliable":[85],"operation.":[87],"In":[88],"paper,":[90],"we":[91],"demonstrate":[92],"end-to-end":[94],"cross-layer":[95],"FeFET":[96,136],"reliability":[97],"modeling":[98],"obtain":[100],"robust":[101],"across":[103],"stack":[106],"starting":[107],"physics":[110],"all":[111],"way":[113],"circuits":[115],"systems.":[117],"The":[118],"effect":[119,164],"random":[121],"spatial":[122],"fluctuation":[123],"(FE)":[126],"domains":[127],"other":[129],"variability":[130,167],"sources":[131],"on":[132,168],"electrical":[133],"characteristics":[134],"computed":[138],"through":[139],"detailed":[140],"physics-based":[141],"TCAD":[142],"simulations.":[143],"Then,":[144],"entire":[146],"TCAM":[147],"array":[148],"simulated":[150],"SPICE":[152],"using":[153],"carefully":[155],"designed":[156],"calibrated":[158],"compact":[159],"model":[160],"capture":[162],"error":[170,178],"probability":[171,179],"individual":[173],"distances.":[175],"Finally,":[176],"employed":[181],"compute":[183],"loss":[185,200],"inference":[187],"accuracy":[188,202],"language":[193],"recognition":[194],"task.":[195],"We":[196],"observe":[197],"very":[198],"little":[199],"even":[203],"high":[206],"degree":[207],"variation.":[209]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":3},{"year":2023,"cited_by_count":9}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}