{"id":"https://openalex.org/W2920126575","doi":"https://doi.org/10.1109/vlsi-soc.2018.8644729","title":"Multi-bit nonvolatile flip-flop based on NAND-like spin transfer torque MRAM","display_name":"Multi-bit nonvolatile flip-flop based on NAND-like spin transfer torque MRAM","publication_year":2018,"publication_date":"2018-10-01","ids":{"openalex":"https://openalex.org/W2920126575","doi":"https://doi.org/10.1109/vlsi-soc.2018.8644729","mag":"2920126575"},"language":"en","primary_location":{"id":"doi:10.1109/vlsi-soc.2018.8644729","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vlsi-soc.2018.8644729","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 IFIP/IEEE International Conference on Very Large Scale Integration (VLSI-SoC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5076875525","display_name":"Erya Deng","orcid":"https://orcid.org/0000-0001-5064-8057"},"institutions":[{"id":"https://openalex.org/I82880672","display_name":"Beihang University","ror":"https://ror.org/00wk2mp56","country_code":"CN","type":"education","lineage":["https://openalex.org/I82880672"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Erya Deng","raw_affiliation_strings":["School of Microelectronics, Beihang University"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Microelectronics, Beihang University","institution_ids":["https://openalex.org/I82880672"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5056897117","display_name":"Zhaohao Wang","orcid":"https://orcid.org/0000-0002-2999-7903"},"institutions":[{"id":"https://openalex.org/I82880672","display_name":"Beihang University","ror":"https://ror.org/00wk2mp56","country_code":"CN","type":"education","lineage":["https://openalex.org/I82880672"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zhaohao Wang","raw_affiliation_strings":["School of Microelectronics, Beihang University"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Microelectronics, Beihang University","institution_ids":["https://openalex.org/I82880672"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100381646","display_name":"Wang Kang","orcid":"https://orcid.org/0000-0002-3169-6034"},"institutions":[{"id":"https://openalex.org/I82880672","display_name":"Beihang University","ror":"https://ror.org/00wk2mp56","country_code":"CN","type":"education","lineage":["https://openalex.org/I82880672"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Wang Kang","raw_affiliation_strings":["School of Microelectronics, Beihang University"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Microelectronics, Beihang University","institution_ids":["https://openalex.org/I82880672"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5018740715","display_name":"Shaoqian Wei","orcid":"https://orcid.org/0000-0002-5453-0627"},"institutions":[{"id":"https://openalex.org/I82880672","display_name":"Beihang University","ror":"https://ror.org/00wk2mp56","country_code":"CN","type":"education","lineage":["https://openalex.org/I82880672"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Shaoqian Wei","raw_affiliation_strings":["School of Electronic and Information Engineering, Beihang University, Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electronic and Information Engineering, Beihang University, Beijing, China","institution_ids":["https://openalex.org/I82880672"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100381646","display_name":"Wang Kang","orcid":"https://orcid.org/0000-0002-3169-6034"},"institutions":[{"id":"https://openalex.org/I82880672","display_name":"Beihang University","ror":"https://ror.org/00wk2mp56","country_code":"CN","type":"education","lineage":["https://openalex.org/I82880672"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Weisheng Zhao","raw_affiliation_strings":["School of Microelectronics, Beihang University"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Microelectronics, Beihang University","institution_ids":["https://openalex.org/I82880672"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5076875525"],"corresponding_institution_ids":["https://openalex.org/I82880672"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.18527678,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":91,"max":95},"biblio":{"volume":null,"issue":null,"first_page":"184","last_page":"187"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9987000226974487,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/spin-transfer-torque","display_name":"Spin-transfer torque","score":0.8639655113220215},{"id":"https://openalex.org/keywords/spintronics","display_name":"Spintronics","score":0.7265618443489075},{"id":"https://openalex.org/keywords/tunnel-magnetoresistance","display_name":"Tunnel magnetoresistance","score":0.6928859949111938},{"id":"https://openalex.org/keywords/magnetoresistive-random-access-memory","display_name":"Magnetoresistive random-access memory","score":0.6680362820625305},{"id":"https://openalex.org/keywords/nand-gate","display_name":"NAND gate","score":0.6651175022125244},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.5409769415855408},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5276150703430176},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.508370578289032},{"id":"https://openalex.org/keywords/standby-power","display_name":"Standby power","score":0.4872201979160309},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4776267409324646},{"id":"https://openalex.org/keywords/torque","display_name":"Torque","score":0.46135565638542175},{"id":"https://openalex.org/keywords/non-volatile-memory","display_name":"Non-volatile memory","score":0.4208031892776489},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.41516396403312683},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.3488868474960327},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.26944345235824585},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.255804181098938},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.20243996381759644},{"id":"https://openalex.org/keywords/random-access-memory","display_name":"Random access memory","score":0.12861484289169312},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.12165907025337219},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.07079970836639404},{"id":"https://openalex.org/keywords/magnetic-field","display_name":"Magnetic field","score":0.07070237398147583}],"concepts":[{"id":"https://openalex.org/C609986","wikidata":"https://www.wikidata.org/wiki/Q844840","display_name":"Spin-transfer torque","level":4,"score":0.8639655113220215},{"id":"https://openalex.org/C207999682","wikidata":"https://www.wikidata.org/wiki/Q258659","display_name":"Spintronics","level":3,"score":0.7265618443489075},{"id":"https://openalex.org/C56202322","wikidata":"https://www.wikidata.org/wiki/Q1884383","display_name":"Tunnel magnetoresistance","level":3,"score":0.6928859949111938},{"id":"https://openalex.org/C46891859","wikidata":"https://www.wikidata.org/wiki/Q1061546","display_name":"Magnetoresistive random-access memory","level":3,"score":0.6680362820625305},{"id":"https://openalex.org/C124296912","wikidata":"https://www.wikidata.org/wiki/Q575178","display_name":"NAND gate","level":3,"score":0.6651175022125244},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5409769415855408},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5276150703430176},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.508370578289032},{"id":"https://openalex.org/C7140552","wikidata":"https://www.wikidata.org/wiki/Q1366402","display_name":"Standby power","level":3,"score":0.4872201979160309},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4776267409324646},{"id":"https://openalex.org/C144171764","wikidata":"https://www.wikidata.org/wiki/Q48103","display_name":"Torque","level":2,"score":0.46135565638542175},{"id":"https://openalex.org/C177950962","wikidata":"https://www.wikidata.org/wiki/Q10997658","display_name":"Non-volatile memory","level":2,"score":0.4208031892776489},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.41516396403312683},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.3488868474960327},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.26944345235824585},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.255804181098938},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.20243996381759644},{"id":"https://openalex.org/C2994168587","wikidata":"https://www.wikidata.org/wiki/Q5295","display_name":"Random access memory","level":2,"score":0.12861484289169312},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.12165907025337219},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.07079970836639404},{"id":"https://openalex.org/C115260700","wikidata":"https://www.wikidata.org/wiki/Q11408","display_name":"Magnetic field","level":2,"score":0.07070237398147583},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C82217956","wikidata":"https://www.wikidata.org/wiki/Q184207","display_name":"Ferromagnetism","level":2,"score":0.0},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.0},{"id":"https://openalex.org/C32546565","wikidata":"https://www.wikidata.org/wiki/Q856711","display_name":"Magnetization","level":3,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/vlsi-soc.2018.8644729","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vlsi-soc.2018.8644729","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 IFIP/IEEE International Conference on Very Large Scale Integration (VLSI-SoC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.8899999856948853}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":27,"referenced_works":["https://openalex.org/W1895848680","https://openalex.org/W1965304117","https://openalex.org/W1988431200","https://openalex.org/W2010162980","https://openalex.org/W2014744284","https://openalex.org/W2087433247","https://openalex.org/W2110134128","https://openalex.org/W2110276925","https://openalex.org/W2113809410","https://openalex.org/W2118531588","https://openalex.org/W2125305364","https://openalex.org/W2156728623","https://openalex.org/W2358150823","https://openalex.org/W2466378107","https://openalex.org/W2563829368","https://openalex.org/W2612923708","https://openalex.org/W2734294704","https://openalex.org/W2747816535","https://openalex.org/W2772082621","https://openalex.org/W2790154111","https://openalex.org/W2940520525","https://openalex.org/W3105284836","https://openalex.org/W3105500088","https://openalex.org/W3105876739","https://openalex.org/W4232921285","https://openalex.org/W6683132901","https://openalex.org/W6762296674"],"related_works":["https://openalex.org/W4226197542","https://openalex.org/W1977755618","https://openalex.org/W2034593071","https://openalex.org/W1970094457","https://openalex.org/W2744144420","https://openalex.org/W4231059390","https://openalex.org/W3136027979","https://openalex.org/W2490184523","https://openalex.org/W2543376619","https://openalex.org/W2289300168"],"abstract_inverted_index":{"Nonvolatile":[0],"flip-flops":[1],"(NVFFs)":[2],"integrating":[3],"emerging":[4],"spintronics":[5,85],"devices":[6,87],"such":[7],"as":[8],"magnetic":[9],"tunnel":[10],"junction":[11],"(MTJ)":[12],"are":[13,89],"under":[14],"intensive":[15],"investigation.":[16],"They":[17],"allow":[18],"computing":[19],"systems":[20],"to":[21],"be":[22,38,121],"powered-off":[23],"during":[24],"the":[25,117],"standby":[26],"state,":[27],"hence":[28],"high":[29,67],"static":[30],"power":[31,69,105],"issue":[32],"of":[33,104,116],"conventional":[34],"CMOS":[35,56],"technology":[36],"can":[37],"addressed.":[39],"MTJ":[40],"based":[41,57],"on":[42],"spin":[43,94],"transfer":[44],"torque":[45,96],"(STT)":[46],"effect":[47],"provide":[48],"non-volatility,":[49],"good":[50],"endurance":[51],"and":[52,70,93,109,114,123],"3D":[53],"integration":[54],"with":[55],"circuits.":[58],"However,":[59],"it":[60],"suffers":[61],"from":[62],"relative":[63],"long":[64],"switching":[65,68,72],"delay,":[66],"asymmetric":[71],"issues.":[73],"In":[74],"this":[75],"work,":[76],"we":[77],"first":[78],"present":[79],"a":[80],"multi-bit":[81],"NVFF":[82,119],"using":[83],"NAND-like":[84],"(NANS-SPIN)":[86],"which":[88],"written":[90],"by":[91],"STT":[92],"orbit":[95],"(SOT)":[97],"currents.":[98],"It":[99],"shows":[100],"advantages":[101],"in":[102],"terms":[103],"consumption,":[106],"area":[107],"overhead":[108],"write":[110],"voltage.":[111],"Then,":[112],"functionality":[113],"performance":[115],"proposed":[118],"will":[120],"simulated":[122],"validated.":[124]},"counts_by_year":[{"year":2025,"cited_by_count":1}],"updated_date":"2026-04-29T09:16:38.111599","created_date":"2025-10-10T00:00:00"}