{"id":"https://openalex.org/W4234313010","doi":"https://doi.org/10.1109/vlsi-soc.2012.6379028","title":"Reliability enhancement of power gating transistor under time dependent dielectric breakdown","display_name":"Reliability enhancement of power gating transistor under time dependent dielectric breakdown","publication_year":2012,"publication_date":"2012-10-01","ids":{"openalex":"https://openalex.org/W4234313010","doi":"https://doi.org/10.1109/vlsi-soc.2012.6379028"},"language":"en","primary_location":{"id":"doi:10.1109/vlsi-soc.2012.6379028","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vlsi-soc.2012.6379028","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2012 IEEE/IFIP 20th International Conference on VLSI and System-on-Chip (VLSI-SoC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5066983905","display_name":"Hamid Mahmoodi","orcid":"https://orcid.org/0000-0003-4237-3086"},"institutions":[],"countries":[],"is_corresponding":true,"raw_author_name":"Hamid Mahmoodi","raw_affiliation_strings":[],"affiliations":[]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5066983905"],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.38326802,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"30","issue":null,"first_page":"189","last_page":"194"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.726478636264801},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.598916232585907},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5762737393379211},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.5507676005363464},{"id":"https://openalex.org/keywords/dielectric-strength","display_name":"Dielectric strength","score":0.548620343208313},{"id":"https://openalex.org/keywords/power-semiconductor-device","display_name":"Power semiconductor device","score":0.5208542943000793},{"id":"https://openalex.org/keywords/power-gating","display_name":"Power gating","score":0.5064085721969604},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.4806141257286072},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4622046947479248},{"id":"https://openalex.org/keywords/electric-breakdown","display_name":"Electric breakdown","score":0.45317819714546204},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.39593496918678284},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.38736122846603394},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3838052749633789},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.19906383752822876},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1679844856262207},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.14810121059417725}],"concepts":[{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.726478636264801},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.598916232585907},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5762737393379211},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.5507676005363464},{"id":"https://openalex.org/C70401718","wikidata":"https://www.wikidata.org/wiki/Q343241","display_name":"Dielectric strength","level":3,"score":0.548620343208313},{"id":"https://openalex.org/C129014197","wikidata":"https://www.wikidata.org/wiki/Q906544","display_name":"Power semiconductor device","level":3,"score":0.5208542943000793},{"id":"https://openalex.org/C2780700455","wikidata":"https://www.wikidata.org/wiki/Q7236515","display_name":"Power gating","level":4,"score":0.5064085721969604},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.4806141257286072},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4622046947479248},{"id":"https://openalex.org/C2984221369","wikidata":"https://www.wikidata.org/wiki/Q422584","display_name":"Electric breakdown","level":3,"score":0.45317819714546204},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.39593496918678284},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.38736122846603394},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3838052749633789},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.19906383752822876},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1679844856262207},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.14810121059417725},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/vlsi-soc.2012.6379028","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vlsi-soc.2012.6379028","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2012 IEEE/IFIP 20th International Conference on VLSI and System-on-Chip (VLSI-SoC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.8700000047683716,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":5,"referenced_works":["https://openalex.org/W48128203","https://openalex.org/W1490003591","https://openalex.org/W2061871268","https://openalex.org/W2124276471","https://openalex.org/W2126153056"],"related_works":["https://openalex.org/W4239024842","https://openalex.org/W2152889779","https://openalex.org/W2548322003","https://openalex.org/W2482113690","https://openalex.org/W2613535449","https://openalex.org/W2106856536","https://openalex.org/W2139515940","https://openalex.org/W4212958468","https://openalex.org/W72767096","https://openalex.org/W2601582629"],"abstract_inverted_index":null,"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}