{"id":"https://openalex.org/W4239750007","doi":"https://doi.org/10.1109/vlsi-dat.2015.7114552","title":"Power and sensor semiconductors driving automotive applications","display_name":"Power and sensor semiconductors driving automotive applications","publication_year":2015,"publication_date":"2015-04-01","ids":{"openalex":"https://openalex.org/W4239750007","doi":"https://doi.org/10.1109/vlsi-dat.2015.7114552"},"language":"en","primary_location":{"id":"doi:10.1109/vlsi-dat.2015.7114552","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vlsi-dat.2015.7114552","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"VLSI Design, Automation and Test(VLSI-DAT)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5004516703","display_name":"Hans Stork","orcid":null},"institutions":[{"id":"https://openalex.org/I100625452","display_name":"ON Semiconductor (United States)","ror":"https://ror.org/03nw6pt28","country_code":"US","type":"company","lineage":["https://openalex.org/I100625452"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Hans Stork","raw_affiliation_strings":["CTO ON Semiconductor, USA"],"affiliations":[{"raw_affiliation_string":"CTO ON Semiconductor, USA","institution_ids":["https://openalex.org/I100625452"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5004516703"],"corresponding_institution_ids":["https://openalex.org/I100625452"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.32469221,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"1"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.7027999758720398,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.7027999758720398,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/automotive-industry","display_name":"Automotive industry","score":0.6934750080108643},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.6190040111541748},{"id":"https://openalex.org/keywords/power-semiconductor-device","display_name":"Power semiconductor device","score":0.5722190737724304},{"id":"https://openalex.org/keywords/automotive-electronics","display_name":"Automotive electronics","score":0.5532926917076111},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5260945558547974},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.5071325302124023},{"id":"https://openalex.org/keywords/electronics","display_name":"Electronics","score":0.4994485378265381},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.4992551803588867},{"id":"https://openalex.org/keywords/power-electronics","display_name":"Power electronics","score":0.47957128286361694},{"id":"https://openalex.org/keywords/high-voltage","display_name":"High voltage","score":0.460125207901001},{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.45006856322288513},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.43801483511924744},{"id":"https://openalex.org/keywords/semiconductor-device","display_name":"Semiconductor device","score":0.4327358603477478},{"id":"https://openalex.org/keywords/automotive-engineering","display_name":"Automotive engineering","score":0.3453145921230316},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3409871459007263},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.272365003824234},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.11774405837059021}],"concepts":[{"id":"https://openalex.org/C526921623","wikidata":"https://www.wikidata.org/wiki/Q190117","display_name":"Automotive industry","level":2,"score":0.6934750080108643},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.6190040111541748},{"id":"https://openalex.org/C129014197","wikidata":"https://www.wikidata.org/wiki/Q906544","display_name":"Power semiconductor device","level":3,"score":0.5722190737724304},{"id":"https://openalex.org/C2778520156","wikidata":"https://www.wikidata.org/wiki/Q449343","display_name":"Automotive electronics","level":3,"score":0.5532926917076111},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5260945558547974},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.5071325302124023},{"id":"https://openalex.org/C138331895","wikidata":"https://www.wikidata.org/wiki/Q11650","display_name":"Electronics","level":2,"score":0.4994485378265381},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.4992551803588867},{"id":"https://openalex.org/C178911571","wikidata":"https://www.wikidata.org/wiki/Q593143","display_name":"Power electronics","level":3,"score":0.47957128286361694},{"id":"https://openalex.org/C88182573","wikidata":"https://www.wikidata.org/wiki/Q1139740","display_name":"High voltage","level":3,"score":0.460125207901001},{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.45006856322288513},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.43801483511924744},{"id":"https://openalex.org/C79635011","wikidata":"https://www.wikidata.org/wiki/Q175805","display_name":"Semiconductor device","level":3,"score":0.4327358603477478},{"id":"https://openalex.org/C171146098","wikidata":"https://www.wikidata.org/wiki/Q124192","display_name":"Automotive engineering","level":1,"score":0.3453145921230316},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3409871459007263},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.272365003824234},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.11774405837059021},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C146978453","wikidata":"https://www.wikidata.org/wiki/Q3798668","display_name":"Aerospace engineering","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/vlsi-dat.2015.7114552","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vlsi-dat.2015.7114552","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"VLSI Design, Automation and Test(VLSI-DAT)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.6800000071525574}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W1561862401","https://openalex.org/W2365691020","https://openalex.org/W274769908","https://openalex.org/W1925242245","https://openalex.org/W4386159450","https://openalex.org/W2184546999","https://openalex.org/W2887683729","https://openalex.org/W4240017343","https://openalex.org/W1969620786","https://openalex.org/W2328046896"],"abstract_inverted_index":{"Summary":[0],"form":[1],"only":[2],"given.":[3],"Cars":[4],"are":[5],"increasingly":[6],"driven":[7],"by":[8],"electronics":[9],"to":[10,18,34,37],"reduce":[11],"human":[12],"error,":[13],"improve":[14],"traffic":[15],"flow":[16],"and":[17,65,72,90],"meet":[19],"environmental":[20],"regulations.":[21],"The":[22],"semiconductor":[23],"components":[24],"that":[25],"enable":[26],"this":[27,48],"functionality":[28],"range":[29],"from":[30],"medium":[31],"voltage":[32],"discretes":[33],"replace":[35],"relays":[36],"integrated,":[38],"high-voltage":[39,76],"motor":[40],"drivers":[41],"with":[42],"re-programmability":[43],"at":[44],"high":[45],"temperature.":[46],"In":[47],"talk":[49],"we":[50],"will":[51],"review":[52],"the":[53,57,69,83],"technology":[54],"trends":[55,71],"underlying":[56],"improvements":[58],"in":[59],"power":[60,88,91],"discretes,":[61],"such":[62],"as":[63,80,82],"IGBTs":[64],"GaN":[66],"HEMT":[67],"devices,":[68],"scaling":[70],"integration":[73],"needs":[74],"of":[75,87],"BCD":[77],"CMOS":[78],"flows,":[79],"well":[81],"adjacent":[84],"assembly":[85],"challenges":[86],"devices":[89],"integrated":[92],"modules.":[93]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}