{"id":"https://openalex.org/W4230981873","doi":"https://doi.org/10.1109/vlsi-dat.2014.6834928","title":"Scaling trends and challenges of advanced memory technology","display_name":"Scaling trends and challenges of advanced memory technology","publication_year":2014,"publication_date":"2014-04-01","ids":{"openalex":"https://openalex.org/W4230981873","doi":"https://doi.org/10.1109/vlsi-dat.2014.6834928"},"language":"en","primary_location":{"id":"doi:10.1109/vlsi-dat.2014.6834928","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vlsi-dat.2014.6834928","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Technical Papers of 2014 International Symposium on VLSI Design, Automation and Test","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101896507","display_name":"Seok-Hee Lee","orcid":null},"institutions":[{"id":"https://openalex.org/I134353371","display_name":"SK Group (South Korea)","ror":"https://ror.org/03696td91","country_code":"KR","type":"company","lineage":["https://openalex.org/I134353371"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Seok-Hee Lee","raw_affiliation_strings":["R&D Division, SK hynix, Kyoungki-do, Korea"],"affiliations":[{"raw_affiliation_string":"R&D Division, SK hynix, Kyoungki-do, Korea","institution_ids":["https://openalex.org/I134353371"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5101896507"],"corresponding_institution_ids":["https://openalex.org/I134353371"],"apc_list":null,"apc_paid":null,"fwci":1.256,"has_fulltext":false,"cited_by_count":9,"citation_normalized_percentile":{"value":0.8358978,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"1"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9969000220298767,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9969000220298767,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9969000220298767,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9958999752998352,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/dram","display_name":"Dram","score":0.8815835118293762},{"id":"https://openalex.org/keywords/nand-gate","display_name":"NAND gate","score":0.8513002991676331},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.6401320099830627},{"id":"https://openalex.org/keywords/magnetoresistive-random-access-memory","display_name":"Magnetoresistive random-access memory","score":0.5399693250656128},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.48831412196159363},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.4860003888607025},{"id":"https://openalex.org/keywords/universal-memory","display_name":"Universal memory","score":0.48118311166763306},{"id":"https://openalex.org/keywords/data-retention","display_name":"Data retention","score":0.47909143567085266},{"id":"https://openalex.org/keywords/non-volatile-random-access-memory","display_name":"Non-volatile random-access memory","score":0.4637390375137329},{"id":"https://openalex.org/keywords/resistive-random-access-memory","display_name":"Resistive random-access memory","score":0.46207335591316223},{"id":"https://openalex.org/keywords/scaling","display_name":"Scaling","score":0.4253091812133789},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.41177666187286377},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4116396903991699},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.38618502020835876},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.36978012323379517},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.36101269721984863},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.3230544924736023},{"id":"https://openalex.org/keywords/computer-memory","display_name":"Computer memory","score":0.29359889030456543},{"id":"https://openalex.org/keywords/semiconductor-memory","display_name":"Semiconductor memory","score":0.28266778588294983},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.27277854084968567},{"id":"https://openalex.org/keywords/random-access-memory","display_name":"Random access memory","score":0.2222563922405243},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1657445728778839},{"id":"https://openalex.org/keywords/memory-refresh","display_name":"Memory refresh","score":0.12245616316795349},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.10082828998565674}],"concepts":[{"id":"https://openalex.org/C7366592","wikidata":"https://www.wikidata.org/wiki/Q1255620","display_name":"Dram","level":2,"score":0.8815835118293762},{"id":"https://openalex.org/C124296912","wikidata":"https://www.wikidata.org/wiki/Q575178","display_name":"NAND gate","level":3,"score":0.8513002991676331},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.6401320099830627},{"id":"https://openalex.org/C46891859","wikidata":"https://www.wikidata.org/wiki/Q1061546","display_name":"Magnetoresistive random-access memory","level":3,"score":0.5399693250656128},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.48831412196159363},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.4860003888607025},{"id":"https://openalex.org/C195053848","wikidata":"https://www.wikidata.org/wiki/Q7894141","display_name":"Universal memory","level":5,"score":0.48118311166763306},{"id":"https://openalex.org/C2780866740","wikidata":"https://www.wikidata.org/wiki/Q5227345","display_name":"Data retention","level":2,"score":0.47909143567085266},{"id":"https://openalex.org/C34172316","wikidata":"https://www.wikidata.org/wiki/Q499024","display_name":"Non-volatile random-access memory","level":5,"score":0.4637390375137329},{"id":"https://openalex.org/C182019814","wikidata":"https://www.wikidata.org/wiki/Q1143830","display_name":"Resistive random-access memory","level":3,"score":0.46207335591316223},{"id":"https://openalex.org/C99844830","wikidata":"https://www.wikidata.org/wiki/Q102441924","display_name":"Scaling","level":2,"score":0.4253091812133789},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.41177666187286377},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4116396903991699},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.38618502020835876},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.36978012323379517},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.36101269721984863},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.3230544924736023},{"id":"https://openalex.org/C92855701","wikidata":"https://www.wikidata.org/wiki/Q5830907","display_name":"Computer memory","level":3,"score":0.29359889030456543},{"id":"https://openalex.org/C98986596","wikidata":"https://www.wikidata.org/wiki/Q1143031","display_name":"Semiconductor memory","level":2,"score":0.28266778588294983},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.27277854084968567},{"id":"https://openalex.org/C2994168587","wikidata":"https://www.wikidata.org/wiki/Q5295","display_name":"Random access memory","level":2,"score":0.2222563922405243},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1657445728778839},{"id":"https://openalex.org/C87907426","wikidata":"https://www.wikidata.org/wiki/Q6815755","display_name":"Memory refresh","level":4,"score":0.12245616316795349},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.10082828998565674},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.0},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0},{"id":"https://openalex.org/C38652104","wikidata":"https://www.wikidata.org/wiki/Q3510521","display_name":"Computer security","level":1,"score":0.0},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C11413529","wikidata":"https://www.wikidata.org/wiki/Q8366","display_name":"Algorithm","level":1,"score":0.0},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/vlsi-dat.2014.6834928","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vlsi-dat.2014.6834928","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Technical Papers of 2014 International Symposium on VLSI Design, Automation and Test","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2372007526","https://openalex.org/W1993178305","https://openalex.org/W2903040985","https://openalex.org/W2107922524","https://openalex.org/W4235980920","https://openalex.org/W871606772","https://openalex.org/W4372325124","https://openalex.org/W2189229908","https://openalex.org/W2952379800","https://openalex.org/W4387251459"],"abstract_inverted_index":{"Summary":[0],"form":[1],"only":[2,270],"given.":[3],"DRAM":[4,35,45,91,280],"and":[5,18,26,36,49,62,77,98,108,135,154,208,217,230,241,255,286,301],"NAND":[6,37,168,250],"technologies":[7,40,115,171],"have":[8,172,232,276],"been":[9,93,173,193],"successfully":[10],"developed":[11],"so":[12],"far":[13],"thanks":[14],"to":[15,41,158,180,247,256,282],"advanced":[16],"patterning":[17],"device":[19,140,299],"technologies,":[20],"meeting":[21],"high":[22,24,109,129,131,151],"density,":[23,130],"performance":[25,96,104,278],"low":[27,106,133],"cost":[28,153],"requirements.":[29],"However,":[30,143],"imminent":[31],"scaling":[32,89],"limit":[33],"in":[34,47,57,236],"requires":[38,100],"breakthrough":[39],"meet":[42],"market":[43],"needs.":[44],"technology":[46,297],"1xnm":[48],"beyond":[50],"faces":[51],"severe":[52],"challenges,":[53],"such":[54,80,116,149,213,226],"as":[55,81,117,150,175,214,227,268],"difficulties":[56],"obtaining":[58],"sufficient":[59],"storage":[60],"capacitance":[61],"sensing":[63],"margin.":[64],"To":[65],"alleviate":[66],"the":[67,237,258,269,277],"problems,":[68],"new":[69,113,126,293],"materials":[70,302],"for":[71,128,183],"cell":[72,218],"capacitor":[73],"should":[74,84],"be":[75,85,159,164,221,304],"exploited":[76],"systematic":[78],"aids":[79],"error":[82],"correction":[83],"considered.":[86],"Besides":[87],"these":[88],"issues,":[90],"has":[92,145,192],"suffering":[94],"from":[95],"issue,":[97],"it":[99,162],"enhanced":[101],"peripheral":[102],"transistor":[103],"with":[105,122],"power":[107],"speed":[110],"by":[111],"using":[112],"process":[114,209],"HKMG.":[118],"A":[119],"3D":[120,144,167],"integration":[121,300],"TSV":[123],"provides":[124],"a":[125,176,271],"solution":[127],"speed,":[132],"power,":[134],"wider":[136],"bandwidth":[137],"without":[138],"traditional":[139],"geometric":[141],"scaling.":[142],"its":[146,283],"own":[147],"challenges":[148,212],"manufacturing":[152],"reliability":[155],"that":[156,274],"need":[157],"overcome":[160],"before":[161],"could":[163],"widely":[165],"used.":[166],"flash":[169,253],"memory":[170,273],"studied":[174],"strong":[177],"contender":[178],"due":[179,281],"their":[181,201],"potential":[182],"replacing":[184],"conventional":[185,249],"2D":[186],"floating":[187],"gate":[188],"cell.":[189],"Recently,":[190],"there":[191],"remarkable":[194],"progresses":[195],"towards":[196],"mass":[197],"production":[198],"even":[199],"though":[200],"inherent":[202],"issues":[203],"of":[204,260,279,292,298],"poor":[205],"data":[206],"retention":[207],"complexity.":[210],"Several":[211],"process,":[215],"material,":[216],"architecture":[219],"will":[220,303],"discussed.":[222,305],"New":[223],"non-volatile":[224,272,294],"memories":[225,254],"ReRAM,":[228],"PRAM":[229,242],"STT-MRAM":[231,265],"undergone":[233],"explosive":[234],"study":[235],"past":[238],"decade.":[239],"ReRAM":[240],"are":[243],"now":[244],"leading":[245],"candidates":[246],"replace":[248],"or":[251],"NOR":[252],"pioneer":[257],"field":[259],"Storage":[261],"Class":[262],"Memories,":[263],"while":[264],"is":[266],"regarded":[267],"can":[275],"high-speed":[284],"read/write":[285],"excellent":[287],"cycling":[288],"endurance.":[289],"Device":[290],"characteristics":[291],"memories,":[295],"key":[296]},"counts_by_year":[{"year":2020,"cited_by_count":2},{"year":2019,"cited_by_count":1},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":3},{"year":2015,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}