{"id":"https://openalex.org/W2143866528","doi":"https://doi.org/10.1109/vlsi-dat.2012.6212585","title":"Silicon Carbide devices open a new era of power electronics","display_name":"Silicon Carbide devices open a new era of power electronics","publication_year":2012,"publication_date":"2012-04-01","ids":{"openalex":"https://openalex.org/W2143866528","doi":"https://doi.org/10.1109/vlsi-dat.2012.6212585","mag":"2143866528"},"language":"en","primary_location":{"id":"doi:10.1109/vlsi-dat.2012.6212585","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vlsi-dat.2012.6212585","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of Technical Program of 2012 VLSI Design, Automation and Test","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5110116631","display_name":"H. Takasu","orcid":null},"institutions":[{"id":"https://openalex.org/I162282272","display_name":"ROHM","ror":"https://ror.org/00vttj605","country_code":"JP","type":"company","lineage":["https://openalex.org/I162282272"]}],"countries":["JP"],"is_corresponding":true,"raw_author_name":"H. Takasu","raw_affiliation_strings":["ROHM Company Limited, Kyoto, Japan","ROHM Co. Ltd., 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan"],"affiliations":[{"raw_affiliation_string":"ROHM Company Limited, Kyoto, Japan","institution_ids":["https://openalex.org/I162282272"]},{"raw_affiliation_string":"ROHM Co. Ltd., 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan","institution_ids":["https://openalex.org/I162282272"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5110116631"],"corresponding_institution_ids":["https://openalex.org/I162282272"],"apc_list":null,"apc_paid":null,"fwci":0.2455,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.62325366,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"2"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10228","display_name":"Multilevel Inverters and Converters","score":0.9908999800682068,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10175","display_name":"Advanced DC-DC Converters","score":0.9902999997138977,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/silicon-carbide","display_name":"Silicon carbide","score":0.8421750664710999},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7954621911048889},{"id":"https://openalex.org/keywords/trench","display_name":"Trench","score":0.7537512183189392},{"id":"https://openalex.org/keywords/schottky-diode","display_name":"Schottky diode","score":0.664432942867279},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6600649356842041},{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.6299386620521545},{"id":"https://openalex.org/keywords/power-semiconductor-device","display_name":"Power semiconductor device","score":0.5512439608573914},{"id":"https://openalex.org/keywords/electronics","display_name":"Electronics","score":0.5201249718666077},{"id":"https://openalex.org/keywords/engineering-physics","display_name":"Engineering physics","score":0.5173786878585815},{"id":"https://openalex.org/keywords/power-mosfet","display_name":"Power MOSFET","score":0.5160931944847107},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4905514121055603},{"id":"https://openalex.org/keywords/power-electronics","display_name":"Power electronics","score":0.4805729389190674},{"id":"https://openalex.org/keywords/wide-bandgap-semiconductor","display_name":"Wide-bandgap semiconductor","score":0.4757903814315796},{"id":"https://openalex.org/keywords/voltage-drop","display_name":"Voltage drop","score":0.4529515504837036},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.4207439124584198},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.386138916015625},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.3200417160987854},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1431904137134552},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.13264769315719604},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.1056218147277832}],"concepts":[{"id":"https://openalex.org/C2780722187","wikidata":"https://www.wikidata.org/wiki/Q412356","display_name":"Silicon carbide","level":2,"score":0.8421750664710999},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7954621911048889},{"id":"https://openalex.org/C155310634","wikidata":"https://www.wikidata.org/wiki/Q1852785","display_name":"Trench","level":3,"score":0.7537512183189392},{"id":"https://openalex.org/C205200001","wikidata":"https://www.wikidata.org/wiki/Q176066","display_name":"Schottky diode","level":3,"score":0.664432942867279},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6600649356842041},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.6299386620521545},{"id":"https://openalex.org/C129014197","wikidata":"https://www.wikidata.org/wiki/Q906544","display_name":"Power semiconductor device","level":3,"score":0.5512439608573914},{"id":"https://openalex.org/C138331895","wikidata":"https://www.wikidata.org/wiki/Q11650","display_name":"Electronics","level":2,"score":0.5201249718666077},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.5173786878585815},{"id":"https://openalex.org/C88653102","wikidata":"https://www.wikidata.org/wiki/Q570553","display_name":"Power MOSFET","level":5,"score":0.5160931944847107},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4905514121055603},{"id":"https://openalex.org/C178911571","wikidata":"https://www.wikidata.org/wiki/Q593143","display_name":"Power electronics","level":3,"score":0.4805729389190674},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.4757903814315796},{"id":"https://openalex.org/C82178898","wikidata":"https://www.wikidata.org/wiki/Q166839","display_name":"Voltage drop","level":3,"score":0.4529515504837036},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.4207439124584198},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.386138916015625},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.3200417160987854},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1431904137134552},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.13264769315719604},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.1056218147277832},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/vlsi-dat.2012.6212585","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vlsi-dat.2012.6212585","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of Technical Program of 2012 VLSI Design, Automation and Test","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.8999999761581421,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":1,"referenced_works":["https://openalex.org/W4365800126"],"related_works":["https://openalex.org/W1572165129","https://openalex.org/W2124779661","https://openalex.org/W3117022649","https://openalex.org/W1948955989","https://openalex.org/W2977318605","https://openalex.org/W1607623168","https://openalex.org/W2152413727","https://openalex.org/W2031145321","https://openalex.org/W2365691020","https://openalex.org/W2007746594"],"abstract_inverted_index":{"Silicon":[0],"Carbide":[1],"(SiC)":[2],"devices":[3,17,37,73],"have":[4,18],"the":[5,45],"potential":[6],"to":[7,20,54],"reduce":[8,55],"energy":[9],"losses":[10],"in":[11,39],"high":[12,75,79],"power":[13,69,80],"applications.":[14],"However":[15],"SiC":[16,28,72],"yet":[19],"achieve":[21],"ideal":[22],"performance":[23,41],"levels.":[24],"This":[25],"paper":[26],"presents":[27],"diodes":[29,51],"and":[30,59,78],"MOSFETs":[31,61],"with":[32],"advanced":[33],"trench":[34],"structures.":[35],"These":[36],"succeeded":[38],"improving":[40],"by":[42],"reduction":[43],"of":[44],"internal":[46],"electric":[47],"field.":[48],"Trench":[49],"Schottky":[50],"are":[52],"able":[53],"forward":[56],"voltage":[57],"drop":[58],"double-trench":[60],"show":[62],"extremely":[63],"low":[64],"on-resistance.":[65],"In":[66],"addition,":[67],"transfer-molded":[68],"modules":[70],"using":[71],"demonstrated":[74],"temperature":[76],"operation":[77],"density.":[81]},"counts_by_year":[{"year":2021,"cited_by_count":1},{"year":2015,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}