{"id":"https://openalex.org/W4205834020","doi":"https://doi.org/10.1109/vldi-dat.2013.6533829","title":"Microscopic degradation models for advanced technology","display_name":"Microscopic degradation models for advanced technology","publication_year":2013,"publication_date":"2013-04-01","ids":{"openalex":"https://openalex.org/W4205834020","doi":"https://doi.org/10.1109/vldi-dat.2013.6533829"},"language":"en","primary_location":{"id":"doi:10.1109/vldi-dat.2013.6533829","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vldi-dat.2013.6533829","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2013 International Symposium onVLSI Design, Automation, and Test (VLSI-DAT)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5030704805","display_name":"G. Bersuker","orcid":"https://orcid.org/0000-0003-4461-1172"},"institutions":[],"countries":[],"is_corresponding":true,"raw_author_name":"G. Bersuker","raw_affiliation_strings":["SEMATECH, Albany, NY, USA"],"affiliations":[{"raw_affiliation_string":"SEMATECH, Albany, NY, USA","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5030704805"],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.37369673,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"58","issue":null,"first_page":"1","last_page":"1"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9988999962806702,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.7846012115478516},{"id":"https://openalex.org/keywords/degradation","display_name":"Degradation (telecommunications)","score":0.7442871332168579},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.6313604116439819},{"id":"https://openalex.org/keywords/scaling","display_name":"Scaling","score":0.5959810614585876},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5721083879470825},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.46917420625686646},{"id":"https://openalex.org/keywords/statistical-analysis","display_name":"Statistical analysis","score":0.4541345536708832},{"id":"https://openalex.org/keywords/sample","display_name":"Sample (material)","score":0.45094868540763855},{"id":"https://openalex.org/keywords/statistical-model","display_name":"Statistical model","score":0.4130710959434509},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.3586866557598114},{"id":"https://openalex.org/keywords/statistical-physics","display_name":"Statistical physics","score":0.34009769558906555},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.17360088229179382},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.1342397928237915},{"id":"https://openalex.org/keywords/artificial-intelligence","display_name":"Artificial intelligence","score":0.12792059779167175},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.11521604657173157},{"id":"https://openalex.org/keywords/statistics","display_name":"Statistics","score":0.10914000868797302},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.10623985528945923},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.09835562109947205},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.07136332988739014}],"concepts":[{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.7846012115478516},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.7442871332168579},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.6313604116439819},{"id":"https://openalex.org/C99844830","wikidata":"https://www.wikidata.org/wiki/Q102441924","display_name":"Scaling","level":2,"score":0.5959810614585876},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5721083879470825},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.46917420625686646},{"id":"https://openalex.org/C2986587452","wikidata":"https://www.wikidata.org/wiki/Q938438","display_name":"Statistical analysis","level":2,"score":0.4541345536708832},{"id":"https://openalex.org/C198531522","wikidata":"https://www.wikidata.org/wiki/Q485146","display_name":"Sample (material)","level":2,"score":0.45094868540763855},{"id":"https://openalex.org/C114289077","wikidata":"https://www.wikidata.org/wiki/Q3284399","display_name":"Statistical model","level":2,"score":0.4130710959434509},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3586866557598114},{"id":"https://openalex.org/C121864883","wikidata":"https://www.wikidata.org/wiki/Q677916","display_name":"Statistical physics","level":1,"score":0.34009769558906555},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.17360088229179382},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.1342397928237915},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.12792059779167175},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.11521604657173157},{"id":"https://openalex.org/C105795698","wikidata":"https://www.wikidata.org/wiki/Q12483","display_name":"Statistics","level":1,"score":0.10914000868797302},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.10623985528945923},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.09835562109947205},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.07136332988739014},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.0},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/vldi-dat.2013.6533829","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vldi-dat.2013.6533829","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2013 International Symposium onVLSI Design, Automation, and Test (VLSI-DAT)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":1,"referenced_works":["https://openalex.org/W2008147998"],"related_works":["https://openalex.org/W2350702655","https://openalex.org/W2319685803","https://openalex.org/W2026012944","https://openalex.org/W2359486277","https://openalex.org/W2289334277","https://openalex.org/W2785984867","https://openalex.org/W2355334280","https://openalex.org/W3122113541","https://openalex.org/W3123376079","https://openalex.org/W2062963425"],"abstract_inverted_index":{"New":[0],"failure":[1],"mechanisms":[2],"can":[3,47],"be":[4,48],"expected":[5],"to":[6],"emerge":[7],"with":[8,26],"introduction":[9],"of":[10],"new":[11],"materials":[12],"and":[13,63],"device":[14],"structures.":[15],"Reliability":[16],"assessment":[17],"is":[18],"further":[19],"complicated":[20],"by":[21,50,69],"increasing":[22,32],"device-to-device":[23],"variability":[24],"associated":[25],"continuous":[27],"scaling":[28],"that":[29],"demands":[30],"ever":[31],"sample":[33],"sizes":[34],"for":[35],"statistical":[36,44],"evaluations.":[37],"To":[38],"mitigate":[39],"this":[40],"trend,":[41],"the":[42,51,59,70],"traditional":[43],"reliability":[45],"analysis":[46],"complemented":[49],"microscopic":[52],"degradation":[53],"models,":[54],"which":[55],"are":[56],"based":[57],"on":[58],"atomic-level":[60],"material":[61],"properties":[62],"explicitly":[64],"consider":[65],"defect":[66],"generation":[67],"caused":[68],"carrier-dielectric":[71],"interaction.":[72]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}