{"id":"https://openalex.org/W4403278579","doi":"https://doi.org/10.1109/vdat63601.2024.10705733","title":"Impact of SRH Lifetime on the Performance of Aluminium Gallium Nitride Based Ultraviolet -C Light Emitting Diodes","display_name":"Impact of SRH Lifetime on the Performance of Aluminium Gallium Nitride Based Ultraviolet -C Light Emitting Diodes","publication_year":2024,"publication_date":"2024-09-01","ids":{"openalex":"https://openalex.org/W4403278579","doi":"https://doi.org/10.1109/vdat63601.2024.10705733"},"language":"en","primary_location":{"id":"doi:10.1109/vdat63601.2024.10705733","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vdat63601.2024.10705733","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 28th International Symposium on VLSI Design and Test (VDAT)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5063525433","display_name":"Balkrishna Choubey","orcid":"https://orcid.org/0000-0001-9429-8466"},"institutions":[{"id":"https://openalex.org/I4210127441","display_name":"Indian Institute of Technology Jammu","ror":"https://ror.org/02f0vsw63","country_code":"IN","type":"education","lineage":["https://openalex.org/I4210127441"]}],"countries":["IN"],"is_corresponding":true,"raw_author_name":"Balkrishna Choubey","raw_affiliation_strings":["Indian Institute of Technology Jammu,Department of Electrical Engineering,Jammu,India,181221"],"affiliations":[{"raw_affiliation_string":"Indian Institute of Technology Jammu,Department of Electrical Engineering,Jammu,India,181221","institution_ids":["https://openalex.org/I4210127441"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5065865142","display_name":"Kankat Ghosh","orcid":"https://orcid.org/0000-0002-6157-8629"},"institutions":[{"id":"https://openalex.org/I4210127441","display_name":"Indian Institute of Technology Jammu","ror":"https://ror.org/02f0vsw63","country_code":"IN","type":"education","lineage":["https://openalex.org/I4210127441"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Kankat Ghosh","raw_affiliation_strings":["Indian Institute of Technology Jammu,Department of Electrical Engineering,Jammu,India,181221"],"affiliations":[{"raw_affiliation_string":"Indian Institute of Technology Jammu,Department of Electrical Engineering,Jammu,India,181221","institution_ids":["https://openalex.org/I4210127441"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5063525433"],"corresponding_institution_ids":["https://openalex.org/I4210127441"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.10110566,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":0.9929999709129333,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10461","display_name":"Gas Sensing Nanomaterials and Sensors","score":0.9596999883651733,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/aluminium","display_name":"Aluminium","score":0.8103313446044922},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.7767245173454285},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7444841861724854},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.7220433950424194},{"id":"https://openalex.org/keywords/light-emitting-diode","display_name":"Light-emitting diode","score":0.6909744739532471},{"id":"https://openalex.org/keywords/gallium","display_name":"Gallium","score":0.6474591493606567},{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.6438741683959961},{"id":"https://openalex.org/keywords/ultraviolet","display_name":"Ultraviolet","score":0.6392189264297485},{"id":"https://openalex.org/keywords/aluminium-nitride","display_name":"Aluminium nitride","score":0.6088452935218811},{"id":"https://openalex.org/keywords/indium-gallium-nitride","display_name":"Indium gallium nitride","score":0.45429933071136475},{"id":"https://openalex.org/keywords/nitride","display_name":"Nitride","score":0.45229873061180115},{"id":"https://openalex.org/keywords/gallium-arsenide","display_name":"Gallium arsenide","score":0.4361416697502136},{"id":"https://openalex.org/keywords/metallurgy","display_name":"Metallurgy","score":0.21109947562217712},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.12326943874359131}],"concepts":[{"id":"https://openalex.org/C513153333","wikidata":"https://www.wikidata.org/wiki/Q663","display_name":"Aluminium","level":2,"score":0.8103313446044922},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.7767245173454285},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7444841861724854},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.7220433950424194},{"id":"https://openalex.org/C176666156","wikidata":"https://www.wikidata.org/wiki/Q25504","display_name":"Light-emitting diode","level":2,"score":0.6909744739532471},{"id":"https://openalex.org/C550372918","wikidata":"https://www.wikidata.org/wiki/Q861","display_name":"Gallium","level":2,"score":0.6474591493606567},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.6438741683959961},{"id":"https://openalex.org/C2776798109","wikidata":"https://www.wikidata.org/wiki/Q11391","display_name":"Ultraviolet","level":2,"score":0.6392189264297485},{"id":"https://openalex.org/C2780162792","wikidata":"https://www.wikidata.org/wiki/Q414445","display_name":"Aluminium nitride","level":3,"score":0.6088452935218811},{"id":"https://openalex.org/C2778245067","wikidata":"https://www.wikidata.org/wiki/Q425734","display_name":"Indium gallium nitride","level":4,"score":0.45429933071136475},{"id":"https://openalex.org/C194760766","wikidata":"https://www.wikidata.org/wiki/Q410851","display_name":"Nitride","level":3,"score":0.45229873061180115},{"id":"https://openalex.org/C510052550","wikidata":"https://www.wikidata.org/wiki/Q422819","display_name":"Gallium arsenide","level":2,"score":0.4361416697502136},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.21109947562217712},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.12326943874359131},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/vdat63601.2024.10705733","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vdat63601.2024.10705733","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 28th International Symposium on VLSI Design and Test (VDAT)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.75}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":11,"referenced_works":["https://openalex.org/W2077413495","https://openalex.org/W2119253189","https://openalex.org/W2163471715","https://openalex.org/W2586071680","https://openalex.org/W3034355601","https://openalex.org/W3171465556","https://openalex.org/W4243199169","https://openalex.org/W4361224413","https://openalex.org/W4390956119","https://openalex.org/W4394881147","https://openalex.org/W4400194274"],"related_works":["https://openalex.org/W2997878427","https://openalex.org/W2015102054","https://openalex.org/W3035761864","https://openalex.org/W2950533378","https://openalex.org/W2901659943","https://openalex.org/W2014838647","https://openalex.org/W3135630098","https://openalex.org/W4392604327","https://openalex.org/W3021445571","https://openalex.org/W1963577597"],"abstract_inverted_index":{"This":[0],"simulation":[1],"work":[2],"presents":[3],"the":[4,12,38,50,60,68,75,88,91,104,112],"impact":[5],"of":[6,15,49,103],"Shockley-Read-Hall":[7],"(SRH)":[8],"lifetime":[9,32],"variation":[10],"on":[11],"various":[13],"characteristics":[14],"aluminum":[16],"gallium":[17],"nitride":[18],"based":[19],"ultraviolet-C":[20],"light":[21],"emitting":[22],"diode":[23],"(LEDs)":[24],"and":[25,45,71,82],"found":[26],"that":[27],"with":[28,34],"a":[29],"higher":[30,57],"SRH":[31,58],"(i.e.,":[33],"lower":[35],"defect":[36],"density),":[37],"ultimate":[39],"performance":[40],"parameters":[41],"(radiative":[42],"recombination":[43,93],"rate":[44,94],"internal":[46,100],"quantum":[47,76,101],"efficiency)":[48],"final":[51,105],"proposed":[52],"structure":[53,106],"are":[54],"enhanced.":[55],"With":[56],"lifetime,":[59],"non-radiative":[61],"factor":[62],"is":[63],"less":[64],"dominating,":[65],"which":[66,97],"enhances":[67,90],"hole":[69],"concentration":[70,73],"electron":[72],"in":[74,87],"wells":[77],"(active":[78],"region)":[79],"by":[80,95,107],"~258%":[81],"~96%,":[83],"respectively.":[84],"The":[85],"improvement":[86],"same":[89],"radiative":[92],"~6.5-times,":[96],"ultimately":[98],"improves":[99],"efficiency":[102],"18":[108],"times":[109],"compared":[110],"to":[111],"reference":[113],"structure.":[114]},"counts_by_year":[],"updated_date":"2025-12-19T19:40:27.379048","created_date":"2025-10-10T00:00:00"}