{"id":"https://openalex.org/W4403276918","doi":"https://doi.org/10.1109/vdat63601.2024.10705664","title":"Analytical investigation of the Drain Current and Surface Potential in NC- FETs considering the doping concentration and Interface Trap Charge Effect","display_name":"Analytical investigation of the Drain Current and Surface Potential in NC- FETs considering the doping concentration and Interface Trap Charge Effect","publication_year":2024,"publication_date":"2024-09-01","ids":{"openalex":"https://openalex.org/W4403276918","doi":"https://doi.org/10.1109/vdat63601.2024.10705664"},"language":"en","primary_location":{"id":"doi:10.1109/vdat63601.2024.10705664","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vdat63601.2024.10705664","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 28th International Symposium on VLSI Design and Test (VDAT)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5002005493","display_name":"Md. Sifatul Muktadir","orcid":null},"institutions":[{"id":"https://openalex.org/I156406944","display_name":"Defence Institute of Advanced Technology","ror":"https://ror.org/05qpbfx18","country_code":"IN","type":"education","lineage":["https://openalex.org/I156406944"]}],"countries":["IN"],"is_corresponding":true,"raw_author_name":"Md. Sifatul Muktadir","raw_affiliation_strings":["Defence Institute of Advanced Technology,Dept. of Electronics Engineering,Pune,India"],"affiliations":[{"raw_affiliation_string":"Defence Institute of Advanced Technology,Dept. of Electronics Engineering,Pune,India","institution_ids":["https://openalex.org/I156406944"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5037388439","display_name":"Bhubon Chandra Mech","orcid":"https://orcid.org/0000-0002-4406-6007"},"institutions":[{"id":"https://openalex.org/I156406944","display_name":"Defence Institute of Advanced Technology","ror":"https://ror.org/05qpbfx18","country_code":"IN","type":"education","lineage":["https://openalex.org/I156406944"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Bhubon Chandra Mech","raw_affiliation_strings":["Defence Institute of Advanced Technology,Dept. of Electronics Engineering,Pune,India"],"affiliations":[{"raw_affiliation_string":"Defence Institute of Advanced Technology,Dept. of Electronics Engineering,Pune,India","institution_ids":["https://openalex.org/I156406944"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5012660406","display_name":"Rajesh Kumar Singh","orcid":"https://orcid.org/0000-0003-3894-4624"},"institutions":[{"id":"https://openalex.org/I156406944","display_name":"Defence Institute of Advanced Technology","ror":"https://ror.org/05qpbfx18","country_code":"IN","type":"education","lineage":["https://openalex.org/I156406944"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Rajesh Kumar Singh","raw_affiliation_strings":["Defence Institute of Advanced Technology,Dept. of Electronics Engineering,Pune,India"],"affiliations":[{"raw_affiliation_string":"Defence Institute of Advanced Technology,Dept. of Electronics Engineering,Pune,India","institution_ids":["https://openalex.org/I156406944"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5002005493"],"corresponding_institution_ids":["https://openalex.org/I156406944"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.15133211,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9976000189781189,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9944000244140625,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/trap","display_name":"Trap (plumbing)","score":0.804344892501831},{"id":"https://openalex.org/keywords/doping","display_name":"Doping","score":0.7561497688293457},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6209458112716675},{"id":"https://openalex.org/keywords/interface","display_name":"Interface (matter)","score":0.6079388856887817},{"id":"https://openalex.org/keywords/charge","display_name":"Charge (physics)","score":0.5516013503074646},{"id":"https://openalex.org/keywords/current","display_name":"Current (fluid)","score":0.5280961394309998},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5136741995811462},{"id":"https://openalex.org/keywords/condensed-matter-physics","display_name":"Condensed matter physics","score":0.36355841159820557},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3390510082244873},{"id":"https://openalex.org/keywords/engineering-physics","display_name":"Engineering physics","score":0.3372180461883545},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.15542331337928772},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.1539483368396759},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.13982468843460083}],"concepts":[{"id":"https://openalex.org/C121099081","wikidata":"https://www.wikidata.org/wiki/Q665580","display_name":"Trap (plumbing)","level":2,"score":0.804344892501831},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.7561497688293457},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6209458112716675},{"id":"https://openalex.org/C113843644","wikidata":"https://www.wikidata.org/wiki/Q901882","display_name":"Interface (matter)","level":4,"score":0.6079388856887817},{"id":"https://openalex.org/C188082385","wikidata":"https://www.wikidata.org/wiki/Q73792","display_name":"Charge (physics)","level":2,"score":0.5516013503074646},{"id":"https://openalex.org/C148043351","wikidata":"https://www.wikidata.org/wiki/Q4456944","display_name":"Current (fluid)","level":2,"score":0.5280961394309998},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5136741995811462},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.36355841159820557},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3390510082244873},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.3372180461883545},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.15542331337928772},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.1539483368396759},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.13982468843460083},{"id":"https://openalex.org/C196806460","wikidata":"https://www.wikidata.org/wiki/Q188603","display_name":"Capillary action","level":2,"score":0.0},{"id":"https://openalex.org/C28413391","wikidata":"https://www.wikidata.org/wiki/Q785542","display_name":"Capillary number","level":3,"score":0.0},{"id":"https://openalex.org/C153294291","wikidata":"https://www.wikidata.org/wiki/Q25261","display_name":"Meteorology","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/vdat63601.2024.10705664","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vdat63601.2024.10705664","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 28th International Symposium on VLSI Design and Test (VDAT)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":14,"referenced_works":["https://openalex.org/W1989795817","https://openalex.org/W2016106189","https://openalex.org/W2033213698","https://openalex.org/W2087606949","https://openalex.org/W2103729014","https://openalex.org/W2536153828","https://openalex.org/W2999719674","https://openalex.org/W3029480180","https://openalex.org/W3109365753","https://openalex.org/W3162221915","https://openalex.org/W4205253685","https://openalex.org/W4247610120","https://openalex.org/W4365801542","https://openalex.org/W6685810345"],"related_works":["https://openalex.org/W2199813689","https://openalex.org/W4252447916","https://openalex.org/W2369033613","https://openalex.org/W2511880725","https://openalex.org/W2390226751","https://openalex.org/W2904116937","https://openalex.org/W2592098988","https://openalex.org/W1849638103","https://openalex.org/W284217049","https://openalex.org/W2552467349"],"abstract_inverted_index":{"In":[0],"this":[1],"work,":[2],"an":[3],"enhanced":[4],"model":[5],"for":[6],"NC-FET":[7],"is":[8],"presented,":[9],"which":[10],"considers":[11],"doping":[12,45,105],"concentration":[13,46,106],"and":[14,24,107],"the":[15,32,37,43,60,76,92,95,104],"influence":[16],"of":[17,36,94],"interface":[18,96],"trap":[19,97],"charge":[20,98],"on":[21,103],"surface":[22],"potential":[23],"drain":[25,61],"current.":[26],"The":[27],"acquired":[28],"results":[29,89],"revealed":[30],"that":[31,91],"subthreshold":[33,77],"slope":[34],"(SS)":[35],"metal-ferroelectric-semiconductor":[38],"(MFS)":[39],"NC-FeFET":[40],"increases":[41,47],"when":[42,65],"substrate":[44],"from":[48,81],"10<sup":[49,53],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[50,54,57],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">18</sup>":[51],"to":[52,79,84],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">20</sup>":[55],"/m<sup":[56],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">3</sup>,":[58],"while":[59],"current":[62],"drops.":[63],"Furthermore,":[64],"temperature":[66,108],"increases,":[67],"voltage":[68],"amplification":[69],"occurs":[70],"at":[71],"higher":[72],"gate":[73],"voltages,":[74],"causing":[75],"swing":[78],"rise":[80],"58.4":[82],"mV/dec":[83],"61.2":[85],"mV/dec.":[86],"These":[87],"obtained":[88],"indicate":[90],"inclusion":[93],"effect":[99],"puts":[100],"a":[101],"limit":[102],"in":[109],"NC-FeFETs.":[110]},"counts_by_year":[],"updated_date":"2025-12-21T01:58:51.020947","created_date":"2025-10-10T00:00:00"}