{"id":"https://openalex.org/W3085125487","doi":"https://doi.org/10.1109/vdat50263.2020.9190409","title":"Suppression of Ambipolar current in Tunnel Field-Effect Transistor using Field-Plate","display_name":"Suppression of Ambipolar current in Tunnel Field-Effect Transistor using Field-Plate","publication_year":2020,"publication_date":"2020-07-01","ids":{"openalex":"https://openalex.org/W3085125487","doi":"https://doi.org/10.1109/vdat50263.2020.9190409","mag":"3085125487"},"language":"en","primary_location":{"id":"doi:10.1109/vdat50263.2020.9190409","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vdat50263.2020.9190409","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 24th International Symposium on VLSI Design and Test (VDAT)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5032199332","display_name":"Subhadip Poria","orcid":null},"institutions":[{"id":"https://openalex.org/I68891433","display_name":"Indian Institute of Technology Delhi","ror":"https://ror.org/049tgcd06","country_code":"IN","type":"education","lineage":["https://openalex.org/I68891433"]},{"id":"https://openalex.org/I119939252","display_name":"Indraprastha Institute of Information Technology Delhi","ror":"https://ror.org/03vfp4g33","country_code":"IN","type":"education","lineage":["https://openalex.org/I119939252"]}],"countries":["IN"],"is_corresponding":true,"raw_author_name":"Subhadip Poria","raw_affiliation_strings":["ECE, IIIT Delhi, New Delhi, India"],"affiliations":[{"raw_affiliation_string":"ECE, IIIT Delhi, New Delhi, India","institution_ids":["https://openalex.org/I119939252","https://openalex.org/I68891433"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5054435835","display_name":"Shelly Garg","orcid":"https://orcid.org/0000-0002-6807-7544"},"institutions":[{"id":"https://openalex.org/I68891433","display_name":"Indian Institute of Technology Delhi","ror":"https://ror.org/049tgcd06","country_code":"IN","type":"education","lineage":["https://openalex.org/I68891433"]},{"id":"https://openalex.org/I119939252","display_name":"Indraprastha Institute of Information Technology Delhi","ror":"https://ror.org/03vfp4g33","country_code":"IN","type":"education","lineage":["https://openalex.org/I119939252"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Shelly Garg","raw_affiliation_strings":["ECE, IIIT Delhi, New Delhi, India"],"affiliations":[{"raw_affiliation_string":"ECE, IIIT Delhi, New Delhi, India","institution_ids":["https://openalex.org/I119939252","https://openalex.org/I68891433"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5026324323","display_name":"Sneh Saurabh","orcid":"https://orcid.org/0000-0002-0587-3391"},"institutions":[{"id":"https://openalex.org/I119939252","display_name":"Indraprastha Institute of Information Technology Delhi","ror":"https://ror.org/03vfp4g33","country_code":"IN","type":"education","lineage":["https://openalex.org/I119939252"]},{"id":"https://openalex.org/I68891433","display_name":"Indian Institute of Technology Delhi","ror":"https://ror.org/049tgcd06","country_code":"IN","type":"education","lineage":["https://openalex.org/I68891433"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Sneh Saurabh","raw_affiliation_strings":["ECE, IIIT Delhi, New Delhi, India"],"affiliations":[{"raw_affiliation_string":"ECE, IIIT Delhi, New Delhi, India","institution_ids":["https://openalex.org/I119939252","https://openalex.org/I68891433"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5032199332"],"corresponding_institution_ids":["https://openalex.org/I119939252","https://openalex.org/I68891433"],"apc_list":null,"apc_paid":null,"fwci":0.3082,"has_fulltext":false,"cited_by_count":7,"citation_normalized_percentile":{"value":0.57028925,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"6"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/ambipolar-diffusion","display_name":"Ambipolar diffusion","score":0.8400537967681885},{"id":"https://openalex.org/keywords/tunnel-field-effect-transistor","display_name":"Tunnel field-effect transistor","score":0.6955893039703369},{"id":"https://openalex.org/keywords/current","display_name":"Current (fluid)","score":0.6745859980583191},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5674668550491333},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.561130940914154},{"id":"https://openalex.org/keywords/field","display_name":"Field (mathematics)","score":0.5346654057502747},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4808998107910156},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.43221503496170044},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.42273780703544617},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.3008687496185303},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2616591453552246},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.16022762656211853}],"concepts":[{"id":"https://openalex.org/C25621703","wikidata":"https://www.wikidata.org/wiki/Q2658857","display_name":"Ambipolar diffusion","level":3,"score":0.8400537967681885},{"id":"https://openalex.org/C2775945429","wikidata":"https://www.wikidata.org/wiki/Q17139821","display_name":"Tunnel field-effect transistor","level":5,"score":0.6955893039703369},{"id":"https://openalex.org/C148043351","wikidata":"https://www.wikidata.org/wiki/Q4456944","display_name":"Current (fluid)","level":2,"score":0.6745859980583191},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5674668550491333},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.561130940914154},{"id":"https://openalex.org/C9652623","wikidata":"https://www.wikidata.org/wiki/Q190109","display_name":"Field (mathematics)","level":2,"score":0.5346654057502747},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4808998107910156},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.43221503496170044},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.42273780703544617},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3008687496185303},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2616591453552246},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.16022762656211853},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0},{"id":"https://openalex.org/C202444582","wikidata":"https://www.wikidata.org/wiki/Q837863","display_name":"Pure mathematics","level":1,"score":0.0},{"id":"https://openalex.org/C82706917","wikidata":"https://www.wikidata.org/wiki/Q10251","display_name":"Plasma","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/vdat50263.2020.9190409","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vdat50263.2020.9190409","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 24th International Symposium on VLSI Design and Test (VDAT)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.5600000023841858,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":31,"referenced_works":["https://openalex.org/W1698338803","https://openalex.org/W1929448489","https://openalex.org/W1968284496","https://openalex.org/W1971494193","https://openalex.org/W1975037717","https://openalex.org/W1989611240","https://openalex.org/W2009624223","https://openalex.org/W2018292887","https://openalex.org/W2022912470","https://openalex.org/W2032197740","https://openalex.org/W2047268472","https://openalex.org/W2060612942","https://openalex.org/W2075586275","https://openalex.org/W2110584581","https://openalex.org/W2121290756","https://openalex.org/W2129599852","https://openalex.org/W2129680670","https://openalex.org/W2140378133","https://openalex.org/W2149800702","https://openalex.org/W2153717872","https://openalex.org/W2163491789","https://openalex.org/W2164708092","https://openalex.org/W2463284930","https://openalex.org/W2533460176","https://openalex.org/W2619650202","https://openalex.org/W2739233858","https://openalex.org/W2767376765","https://openalex.org/W2783135798","https://openalex.org/W2791832526","https://openalex.org/W2925461897","https://openalex.org/W3102005610"],"related_works":["https://openalex.org/W2478334958","https://openalex.org/W3034985554","https://openalex.org/W2965987520","https://openalex.org/W156354629","https://openalex.org/W4206839474","https://openalex.org/W2987291318","https://openalex.org/W2104266381","https://openalex.org/W3175828884","https://openalex.org/W2402974859","https://openalex.org/W3193647926"],"abstract_inverted_index":{"This":[0],"paper":[1],"proposes":[2],"a":[3,29,60,99],"tunnel":[4],"field-effect":[5],"transistor":[6],"(TFET)":[7],"with":[8,31],"an":[9,32,65],"additional":[10],"field-plate":[11,30,61],"over":[12],"the":[13,17,38,41,44,48,69,72,76,90,94,103,107,118,122,127],"drain":[14,42,70],"region":[15],"in":[16,98,102,117],"device.":[18],"Using":[19,82],"2-D":[20],"device":[21,49,77,124],"simulations,":[22,83],"it":[23,55,84],"is":[24,56,62,85,114],"shown":[25,86],"that,":[26,87],"by":[27],"introducing":[28],"appropriate":[33,66],"work":[34],"function,":[35],"placed":[36,63],"on":[37,68],"top":[39],"of":[40,47,75,109],"region,":[43,71],"ambipolar":[45],"current":[46],"can":[50],"be":[51],"effectively":[52],"suppressed.":[53],"Furthermore,":[54],"demonstrated":[57],"that":[58],"when":[59],"at":[64],"height":[67],"gate-to-drain":[73,104],"capacitance":[74],"does":[78],"not":[79],"increase":[80],"significantly.":[81],"compared":[88,125],"to":[89,126],"gate-on-drain":[91,133],"overlap":[92],"technique,":[93],"proposed":[95,123],"technique":[96],"results":[97],"substantial":[100],"decrease":[101],"capacitance.":[105],"Consequently,":[106],"fan-out":[108],"four":[110],"(FO4)":[111],"inverter":[112],"delay":[113],"22%":[115],"smaller":[116],"circuit":[119,128],"realized":[120,129],"using":[121,130],"TFETs":[131],"having":[132],"overlap.":[134]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":2},{"year":2022,"cited_by_count":2},{"year":2021,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}