{"id":"https://openalex.org/W3132430102","doi":"https://doi.org/10.1109/tvlsi.2021.3058150","title":"Adaptive Sensing Voltage Modulation Technique in Cross-Point OTS-PRAM","display_name":"Adaptive Sensing Voltage Modulation Technique in Cross-Point OTS-PRAM","publication_year":2021,"publication_date":"2021-02-23","ids":{"openalex":"https://openalex.org/W3132430102","doi":"https://doi.org/10.1109/tvlsi.2021.3058150","mag":"3132430102"},"language":"en","primary_location":{"id":"doi:10.1109/tvlsi.2021.3058150","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tvlsi.2021.3058150","pdf_url":null,"source":{"id":"https://openalex.org/S37538908","display_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","issn_l":"1063-8210","issn":["1063-8210","1557-9999"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5009331330","display_name":"Kwang Woo Lee","orcid":"https://orcid.org/0000-0002-4695-8359"},"institutions":[{"id":"https://openalex.org/I193775966","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96","country_code":"KR","type":"education","lineage":["https://openalex.org/I193775966"]},{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Kwang Woo Lee","raw_affiliation_strings":["Samsung Electronics Company, Ltd., Hwasung-Si, South Korea","School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea"],"raw_orcid":"https://orcid.org/0000-0002-4695-8359","affiliations":[{"raw_affiliation_string":"Samsung Electronics Company, Ltd., Hwasung-Si, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea","institution_ids":["https://openalex.org/I193775966"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5089067586","display_name":"Hyunkook Park","orcid":"https://orcid.org/0000-0001-8803-1124"},"institutions":[{"id":"https://openalex.org/I193775966","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96","country_code":"KR","type":"education","lineage":["https://openalex.org/I193775966"]},{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hyun Kook Park","raw_affiliation_strings":["Samsung Electronics Company, Ltd., Hwasung-Si, South Korea","School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea"],"raw_orcid":"https://orcid.org/0000-0001-8803-1124","affiliations":[{"raw_affiliation_string":"Samsung Electronics Company, Ltd., Hwasung-Si, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea","institution_ids":["https://openalex.org/I193775966"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5037010076","display_name":"Seong\u2010Ook Jung","orcid":"https://orcid.org/0000-0003-0757-2581"},"institutions":[{"id":"https://openalex.org/I193775966","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96","country_code":"KR","type":"education","lineage":["https://openalex.org/I193775966"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Seong-Ook Jung","raw_affiliation_strings":["School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea"],"raw_orcid":"https://orcid.org/0000-0003-0757-2581","affiliations":[{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea","institution_ids":["https://openalex.org/I193775966"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5009331330"],"corresponding_institution_ids":["https://openalex.org/I193775966","https://openalex.org/I2250650973"],"apc_list":null,"apc_paid":null,"fwci":0.4004,"has_fulltext":false,"cited_by_count":6,"citation_normalized_percentile":{"value":0.52039335,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":96},"biblio":{"volume":"29","issue":"4","first_page":"631","last_page":"642"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11315","display_name":"Phase-change materials and chalcogenides","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11315","display_name":"Phase-change materials and chalcogenides","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11128","display_name":"Transition Metal Oxide Nanomaterials","score":0.9966999888420105,"subfield":{"id":"https://openalex.org/subfields/2507","display_name":"Polymers and Plastics"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/latency","display_name":"Latency (audio)","score":0.4719725549221039},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.45039644837379456},{"id":"https://openalex.org/keywords/algorithm","display_name":"Algorithm","score":0.3214263319969177},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.1411590278148651}],"concepts":[{"id":"https://openalex.org/C82876162","wikidata":"https://www.wikidata.org/wiki/Q17096504","display_name":"Latency (audio)","level":2,"score":0.4719725549221039},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.45039644837379456},{"id":"https://openalex.org/C11413529","wikidata":"https://www.wikidata.org/wiki/Q8366","display_name":"Algorithm","level":1,"score":0.3214263319969177},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.1411590278148651}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tvlsi.2021.3058150","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tvlsi.2021.3058150","pdf_url":null,"source":{"id":"https://openalex.org/S37538908","display_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","issn_l":"1063-8210","issn":["1063-8210","1557-9999"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":29,"referenced_works":["https://openalex.org/W1518772125","https://openalex.org/W1566916904","https://openalex.org/W1976198489","https://openalex.org/W1979858647","https://openalex.org/W1999255964","https://openalex.org/W1999871211","https://openalex.org/W2010795939","https://openalex.org/W2031887406","https://openalex.org/W2070339839","https://openalex.org/W2096410465","https://openalex.org/W2103892996","https://openalex.org/W2119668988","https://openalex.org/W2135965542","https://openalex.org/W2156560114","https://openalex.org/W2527078403","https://openalex.org/W2582180703","https://openalex.org/W2744016632","https://openalex.org/W2885287048","https://openalex.org/W2897706246","https://openalex.org/W2912478339","https://openalex.org/W2942318257","https://openalex.org/W2965527147","https://openalex.org/W2994450544","https://openalex.org/W3033972470","https://openalex.org/W3091470911","https://openalex.org/W4232092075","https://openalex.org/W6677974574","https://openalex.org/W6683184104","https://openalex.org/W6727942052"],"related_works":["https://openalex.org/W2748952813","https://openalex.org/W2051487156","https://openalex.org/W2073681303","https://openalex.org/W2390279801","https://openalex.org/W2358668433","https://openalex.org/W2376932109","https://openalex.org/W2001405890","https://openalex.org/W2382290278","https://openalex.org/W2478288626","https://openalex.org/W4391913857"],"abstract_inverted_index":{"Phase-change":[0],"random":[1,28],"access":[2,29],"memory":[3,30,38],"with":[4,154,170],"an":[5,15,43,106,155],"ovonic":[6],"threshold":[7,56],"switch":[8],"(OTS-PRAM)":[9],"has":[10,45],"become":[11,94],"increasingly":[12],"popular":[13],"as":[14],"alternative":[16],"to":[17,93,129],"resolve":[18],"the":[19,23,32,118,125,132,162,168,171,184],"problem":[20],"caused":[21,138],"by":[22,139],"small":[24],"capacity":[25],"of":[26,35,70,84,188],"dynamic":[27],"and":[31,55,79,120,144],"high":[33],"latency":[34],"NAND":[36],"flash":[37],"in":[39,127,135],"computing":[40],"systems.":[41],"However,":[42],"OTS":[44],"a":[46,71,85,97,176],"temperature-dependent":[47,133],"OFF-current":[48],"(":[49,58,73,87],"I":[50,66,74,140],"<sub":[51,60,67,75,81,89,141,146],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[52,61,68,76,82,90,142,147],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">off</sub>":[53,69],")":[54,78,92],"voltage":[57,109,122,136],"V":[59,80,88,145],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">TH</sub>":[62,83],").":[63],"This":[64],"causes":[65],"cell":[72,86],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">off_CELL</sub>":[77,143],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">TH_CELL</sub>":[91,148],"temperature-dependent,":[95],"inducing":[96],"sensing":[98,108],"error":[99,178],"during":[100],"read":[101],"operations.":[102],"In":[103],"this":[104],"article,":[105],"adaptive":[107],"modulation":[110],"(ASVM)":[111],"technique":[112],"is":[113],"proposed":[114,172],"that":[115,167],"adaptively":[116],"controls":[117],"bitline":[119],"wordline":[121],"depending":[123],"on":[124],"change":[126],"temperature":[128,186],"compensate":[130],"for":[131,161],"variation":[134],"drop":[137],".":[149],"The":[150],"HSPICE":[151],"simulation":[152],"results,":[153],"industry-compatible":[156],"250-nm":[157],"complementary":[158],"metal-oxide-semiconductor":[159],"process":[160],"20-nm":[163],"PRAM":[164],"technology,":[165],"show":[166],"OTS-PRAM":[169],"ASVM":[173],"can":[174],"achieve":[175],"bit":[177],"rate":[179],"below":[180],"0.1":[181],"ppm":[182],"within":[183],"operating":[185],"range":[187],"0":[189],"\u00b0C-85":[190],"\u00b0C.":[191]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":2},{"year":2021,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}