{"id":"https://openalex.org/W2963909880","doi":"https://doi.org/10.1109/tvlsi.2019.2925931","title":"Offset-Canceling Single-Ended Sensing Scheme With One-Bit-Line Precharge Architecture for Resistive Nonvolatile Memory in 65-nm CMOS","display_name":"Offset-Canceling Single-Ended Sensing Scheme With One-Bit-Line Precharge Architecture for Resistive Nonvolatile Memory in 65-nm CMOS","publication_year":2019,"publication_date":"2019-07-18","ids":{"openalex":"https://openalex.org/W2963909880","doi":"https://doi.org/10.1109/tvlsi.2019.2925931","mag":"2963909880"},"language":"en","primary_location":{"id":"doi:10.1109/tvlsi.2019.2925931","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tvlsi.2019.2925931","pdf_url":null,"source":{"id":"https://openalex.org/S37538908","display_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","issn_l":"1063-8210","issn":["1063-8210","1557-9999"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5089907396","display_name":"Taehui Na","orcid":"https://orcid.org/0000-0001-8823-0625"},"institutions":[{"id":"https://openalex.org/I193775966","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96","country_code":"KR","type":"education","lineage":["https://openalex.org/I193775966"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Taehui Na","raw_affiliation_strings":["School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea","school of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea","institution_ids":["https://openalex.org/I193775966"]},{"raw_affiliation_string":"school of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea","institution_ids":["https://openalex.org/I193775966"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113847642","display_name":"Byungkyu Song","orcid":null},"institutions":[{"id":"https://openalex.org/I193775966","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96","country_code":"KR","type":"education","lineage":["https://openalex.org/I193775966"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Byungkyu Song","raw_affiliation_strings":["School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea","school of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea","institution_ids":["https://openalex.org/I193775966"]},{"raw_affiliation_string":"school of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea","institution_ids":["https://openalex.org/I193775966"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103187291","display_name":"Sara Choi","orcid":"https://orcid.org/0000-0002-4179-7680"},"institutions":[{"id":"https://openalex.org/I193775966","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96","country_code":"KR","type":"education","lineage":["https://openalex.org/I193775966"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sara Choi","raw_affiliation_strings":["School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea","school of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea"],"raw_orcid":"https://orcid.org/0000-0002-4179-7680","affiliations":[{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea","institution_ids":["https://openalex.org/I193775966"]},{"raw_affiliation_string":"school of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea","institution_ids":["https://openalex.org/I193775966"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5064984422","display_name":"Jung Pill Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I4210087596","display_name":"Qualcomm (United States)","ror":"https://ror.org/002zrf773","country_code":"US","type":"company","lineage":["https://openalex.org/I4210087596"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jung Pill Kim","raw_affiliation_strings":["Qualcomm Incorporated, San Diego, CA, USA","Qualcomm. Inc., San Diego, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Qualcomm Incorporated, San Diego, CA, USA","institution_ids":["https://openalex.org/I4210087596"]},{"raw_affiliation_string":"Qualcomm. Inc., San Diego, CA, USA","institution_ids":["https://openalex.org/I4210087596"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103061707","display_name":"Seung H. Kang","orcid":"https://orcid.org/0000-0003-4270-9918"},"institutions":[{"id":"https://openalex.org/I4210087596","display_name":"Qualcomm (United States)","ror":"https://ror.org/002zrf773","country_code":"US","type":"company","lineage":["https://openalex.org/I4210087596"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Seung H. Kang","raw_affiliation_strings":["Qualcomm Incorporated, San Diego, CA, USA","Qualcomm. Inc., San Diego, CA, USA"],"raw_orcid":"https://orcid.org/0000-0003-4270-9918","affiliations":[{"raw_affiliation_string":"Qualcomm Incorporated, San Diego, CA, USA","institution_ids":["https://openalex.org/I4210087596"]},{"raw_affiliation_string":"Qualcomm. Inc., San Diego, CA, USA","institution_ids":["https://openalex.org/I4210087596"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5037010076","display_name":"Seong\u2010Ook Jung","orcid":"https://orcid.org/0000-0003-0757-2581"},"institutions":[{"id":"https://openalex.org/I193775966","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96","country_code":"KR","type":"education","lineage":["https://openalex.org/I193775966"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Seong-Ook Jung","raw_affiliation_strings":["School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea","school of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea"],"raw_orcid":"https://orcid.org/0000-0003-0757-2581","affiliations":[{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea","institution_ids":["https://openalex.org/I193775966"]},{"raw_affiliation_string":"school of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea","institution_ids":["https://openalex.org/I193775966"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":6,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.9687,"has_fulltext":false,"cited_by_count":20,"citation_normalized_percentile":{"value":0.76368059,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":99},"biblio":{"volume":"27","issue":"11","first_page":"2548","last_page":"2555"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/non-volatile-memory","display_name":"Non-volatile memory","score":0.738095760345459},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.6253842115402222},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5983076095581055},{"id":"https://openalex.org/keywords/offset","display_name":"Offset (computer science)","score":0.593184232711792},{"id":"https://openalex.org/keywords/resistive-random-access-memory","display_name":"Resistive random-access memory","score":0.5539398789405823},{"id":"https://openalex.org/keywords/bottleneck","display_name":"Bottleneck","score":0.5156434774398804},{"id":"https://openalex.org/keywords/memory-architecture","display_name":"Memory architecture","score":0.4873583912849426},{"id":"https://openalex.org/keywords/process-variation","display_name":"Process variation","score":0.46882909536361694},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.4639524817466736},{"id":"https://openalex.org/keywords/memory-cell","display_name":"Memory cell","score":0.4610421359539032},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.44337141513824463},{"id":"https://openalex.org/keywords/data-retention","display_name":"Data retention","score":0.42208003997802734},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.42044901847839355},{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.4121329188346863},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.39621806144714355},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.354571670293808},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1995764672756195},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.17035052180290222}],"concepts":[{"id":"https://openalex.org/C177950962","wikidata":"https://www.wikidata.org/wiki/Q10997658","display_name":"Non-volatile memory","level":2,"score":0.738095760345459},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.6253842115402222},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5983076095581055},{"id":"https://openalex.org/C175291020","wikidata":"https://www.wikidata.org/wiki/Q1156822","display_name":"Offset (computer science)","level":2,"score":0.593184232711792},{"id":"https://openalex.org/C182019814","wikidata":"https://www.wikidata.org/wiki/Q1143830","display_name":"Resistive random-access memory","level":3,"score":0.5539398789405823},{"id":"https://openalex.org/C2780513914","wikidata":"https://www.wikidata.org/wiki/Q18210350","display_name":"Bottleneck","level":2,"score":0.5156434774398804},{"id":"https://openalex.org/C2779602883","wikidata":"https://www.wikidata.org/wiki/Q15544750","display_name":"Memory architecture","level":2,"score":0.4873583912849426},{"id":"https://openalex.org/C93389723","wikidata":"https://www.wikidata.org/wiki/Q7247313","display_name":"Process variation","level":3,"score":0.46882909536361694},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.4639524817466736},{"id":"https://openalex.org/C2776638159","wikidata":"https://www.wikidata.org/wiki/Q18343761","display_name":"Memory cell","level":4,"score":0.4610421359539032},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.44337141513824463},{"id":"https://openalex.org/C2780866740","wikidata":"https://www.wikidata.org/wiki/Q5227345","display_name":"Data retention","level":2,"score":0.42208003997802734},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.42044901847839355},{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.4121329188346863},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.39621806144714355},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.354571670293808},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1995764672756195},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.17035052180290222},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0},{"id":"https://openalex.org/C38652104","wikidata":"https://www.wikidata.org/wiki/Q3510521","display_name":"Computer security","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tvlsi.2019.2925931","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tvlsi.2019.2925931","pdf_url":null,"source":{"id":"https://openalex.org/S37538908","display_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","issn_l":"1063-8210","issn":["1063-8210","1557-9999"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.8999999761581421}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":37,"referenced_works":["https://openalex.org/W1901149441","https://openalex.org/W1966939297","https://openalex.org/W1967035245","https://openalex.org/W1996356878","https://openalex.org/W2010795939","https://openalex.org/W2020003503","https://openalex.org/W2032091965","https://openalex.org/W2056511998","https://openalex.org/W2069795715","https://openalex.org/W2074628056","https://openalex.org/W2091773052","https://openalex.org/W2101575856","https://openalex.org/W2156728623","https://openalex.org/W2159904000","https://openalex.org/W2174116549","https://openalex.org/W2178102281","https://openalex.org/W2303722505","https://openalex.org/W2323614752","https://openalex.org/W2525037638","https://openalex.org/W2533706950","https://openalex.org/W2624816601","https://openalex.org/W2742395195","https://openalex.org/W2789899229","https://openalex.org/W2793776854","https://openalex.org/W2794288888","https://openalex.org/W2921329602","https://openalex.org/W2921351161","https://openalex.org/W2922523256","https://openalex.org/W6642065836","https://openalex.org/W6655493877","https://openalex.org/W6664507615","https://openalex.org/W6683132901","https://openalex.org/W6684149499","https://openalex.org/W6742224841","https://openalex.org/W6748890629","https://openalex.org/W6750171416","https://openalex.org/W6761042657"],"related_works":["https://openalex.org/W2909760123","https://openalex.org/W2104937488","https://openalex.org/W2086074825","https://openalex.org/W3088669828","https://openalex.org/W4386880198","https://openalex.org/W2896073877","https://openalex.org/W2093903577","https://openalex.org/W1549725729","https://openalex.org/W4280614937","https://openalex.org/W3040151040"],"abstract_inverted_index":{"In":[0],"the":[1,7,17,52,89,94,100,108,118,132,143,163,168],"design":[2],"of":[3,99,107,150,158,172],"nonvolatile":[4],"memory":[5],"(NVM),":[6],"sensing":[8,155],"scheme":[9],"(SS)":[10],"has":[11],"become":[12],"a":[13,26,128,148,154],"read-energy":[14],"bottleneck":[15],"because":[16,38],"required":[18],"read-cell":[19],"current":[20,49],"is":[21,32,70,82,102,137],"too":[22],"large":[23],"to":[24,50,105,162],"satisfy":[25,51],"target":[27,53],"read":[28,54,95,113],"yield.":[29,55],"This":[30,56],"problem":[31],"further":[33],"aggravated":[34],"by":[35],"technology":[36],"scaling":[37],"increased":[39],"process":[40,86],"variation":[41],"and":[42,88,123,134,153,174],"reduced":[43],"supply":[44],"voltage":[45],"(VDD)":[46],"require":[47],"more":[48],"paper":[57],"proposes":[58],"an":[59],"offset-canceling":[60],"single-ended":[61],"SS":[62,110],"(OCSE-SS)":[63],"with":[64,147],"one-bit-line":[65],"precharge":[66],"architecture":[67],"(1BLPA)":[68],"that":[69,93,106],"intended":[71],"for":[72],"use":[73],"in":[74],"ultralow":[75],"power":[76],"NVM":[77],"applications.":[78],"The":[79,112],"test":[80],"chip":[81],"fabricated":[83],"using":[84],"65-nm":[85],"technology,":[87],"measurement":[90],"results":[91],"show":[92],"energy":[96,114],"per":[97],"bit":[98],"OCSE-SS":[101,144],"1/3":[103],"compared":[104],"conventional":[109],"(Conv-SS).":[111],"reduction":[115],"comes":[116],"from":[117],"singleended":[119],"sensing,":[120],"offset":[121,164],"cancellation,":[122],"1BLPA":[124],"features.":[125],"Moreover,":[126],"when":[127],"resistance":[129],"difference":[130],"between":[131],"data":[133],"reference":[135],"cells":[136],"as":[138,140],"small":[139],"0.5":[141],"kQ,":[142],"reads":[145],"successfully":[146],"VDD":[149,173],"1.0":[151],"V":[152],"time":[156],"(tSEN)":[157],"17":[159],"ns":[160],"due":[161],"cancellation":[165],"characteristic,":[166],"whereas":[167],"Conv-SS":[169],"fails":[170],"regardless":[171],"tSEN":[175],"values.":[176]},"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2025,"cited_by_count":4},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":5},{"year":2022,"cited_by_count":2},{"year":2021,"cited_by_count":4},{"year":2020,"cited_by_count":2}],"updated_date":"2026-06-18T10:00:31.954636","created_date":"2025-10-10T00:00:00"}