{"id":"https://openalex.org/W2943608468","doi":"https://doi.org/10.1109/tvlsi.2019.2912081","title":"Variation-Tolerant WL Driving Scheme for High-Capacity NAND Flash Memory","display_name":"Variation-Tolerant WL Driving Scheme for High-Capacity NAND Flash Memory","publication_year":2019,"publication_date":"2019-05-01","ids":{"openalex":"https://openalex.org/W2943608468","doi":"https://doi.org/10.1109/tvlsi.2019.2912081","mag":"2943608468"},"language":"en","primary_location":{"id":"doi:10.1109/tvlsi.2019.2912081","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tvlsi.2019.2912081","pdf_url":null,"source":{"id":"https://openalex.org/S37538908","display_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","issn_l":"1063-8210","issn":["1063-8210","1557-9999"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5087220154","display_name":"Junyoung Ko","orcid":"https://orcid.org/0000-0003-3757-9813"},"institutions":[{"id":"https://openalex.org/I193775966","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96","country_code":"KR","type":"education","lineage":["https://openalex.org/I193775966"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Junyoung Ko","raw_affiliation_strings":["School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea","institution_ids":["https://openalex.org/I193775966"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109509787","display_name":"Younghwi Yang","orcid":null},"institutions":[{"id":"https://openalex.org/I193775966","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96","country_code":"KR","type":"education","lineage":["https://openalex.org/I193775966"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Younghwi Yang","raw_affiliation_strings":["School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea","institution_ids":["https://openalex.org/I193775966"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100451475","display_name":"Jisu Kim","orcid":"https://orcid.org/0000-0002-9116-4347"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jisu Kim","raw_affiliation_strings":["Samsung Electronics Co., Ltd., Hwaseong, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics Co., Ltd., Hwaseong, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5056657416","display_name":"Cheonan Lee","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Cheonan Lee","raw_affiliation_strings":["Samsung Electronics Co., Ltd., Hwaseong, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics Co., Ltd., Hwaseong, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5085224557","display_name":"Young-Sun Min","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Young-Sun Min","raw_affiliation_strings":["Samsung Electronics Co., Ltd., Hwaseong, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics Co., Ltd., Hwaseong, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5070451182","display_name":"Jinyoung Chun","orcid":"https://orcid.org/0000-0002-9044-2747"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jinyoung Chun","raw_affiliation_strings":["Samsung Electronics Co., Ltd., Hwaseong, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics Co., Ltd., Hwaseong, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5000097180","display_name":"Moo\u2010Sung Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Moo-Sung Kim","raw_affiliation_strings":["Samsung Electronics Co., Ltd., Hwaseong, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics Co., Ltd., Hwaseong, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5037010076","display_name":"Seong\u2010Ook Jung","orcid":"https://orcid.org/0000-0003-0757-2581"},"institutions":[{"id":"https://openalex.org/I193775966","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96","country_code":"KR","type":"education","lineage":["https://openalex.org/I193775966"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Seong-Ook Jung","raw_affiliation_strings":["School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea"],"raw_orcid":"https://orcid.org/0000-0003-0757-2581","affiliations":[{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea","institution_ids":["https://openalex.org/I193775966"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.7801,"has_fulltext":false,"cited_by_count":6,"citation_normalized_percentile":{"value":0.76009174,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":"27","issue":"8","first_page":"1828","last_page":"1839"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11181","display_name":"Advanced Data Storage Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/1705","display_name":"Computer Networks and Communications"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11181","display_name":"Advanced Data Storage Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/1705","display_name":"Computer Networks and Communications"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9957000017166138,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":0.995199978351593,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/nand-gate","display_name":"NAND gate","score":0.6957817077636719},{"id":"https://openalex.org/keywords/overshoot","display_name":"Overshoot (microwave communication)","score":0.508028507232666},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.4534362554550171},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4227831959724426},{"id":"https://openalex.org/keywords/parasitic-capacitance","display_name":"Parasitic capacitance","score":0.41589468717575073},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.38918420672416687},{"id":"https://openalex.org/keywords/algorithm","display_name":"Algorithm","score":0.34793901443481445},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.24974897503852844},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.22278088331222534},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.21683233976364136},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.1902490258216858},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.07296141982078552}],"concepts":[{"id":"https://openalex.org/C124296912","wikidata":"https://www.wikidata.org/wiki/Q575178","display_name":"NAND gate","level":3,"score":0.6957817077636719},{"id":"https://openalex.org/C2780323453","wikidata":"https://www.wikidata.org/wiki/Q7113957","display_name":"Overshoot (microwave communication)","level":2,"score":0.508028507232666},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.4534362554550171},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4227831959724426},{"id":"https://openalex.org/C154318817","wikidata":"https://www.wikidata.org/wiki/Q2157249","display_name":"Parasitic capacitance","level":4,"score":0.41589468717575073},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.38918420672416687},{"id":"https://openalex.org/C11413529","wikidata":"https://www.wikidata.org/wiki/Q8366","display_name":"Algorithm","level":1,"score":0.34793901443481445},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.24974897503852844},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.22278088331222534},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.21683233976364136},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.1902490258216858},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.07296141982078552},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tvlsi.2019.2912081","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tvlsi.2019.2912081","pdf_url":null,"source":{"id":"https://openalex.org/S37538908","display_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","issn_l":"1063-8210","issn":["1063-8210","1557-9999"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.6600000262260437,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[{"id":"https://openalex.org/F4320332195","display_name":"Samsung","ror":"https://ror.org/04w3jy968"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":25,"referenced_works":["https://openalex.org/W1041794010","https://openalex.org/W1481988107","https://openalex.org/W1486283379","https://openalex.org/W1575390169","https://openalex.org/W1582857608","https://openalex.org/W1972127875","https://openalex.org/W1979804960","https://openalex.org/W1989693659","https://openalex.org/W1994895020","https://openalex.org/W1995204705","https://openalex.org/W1998861718","https://openalex.org/W2016613178","https://openalex.org/W2016991483","https://openalex.org/W2023211675","https://openalex.org/W2110395205","https://openalex.org/W2135210684","https://openalex.org/W2221186049","https://openalex.org/W2514812751","https://openalex.org/W2594234754","https://openalex.org/W2791359478","https://openalex.org/W4241852543","https://openalex.org/W6628955325","https://openalex.org/W6650106315","https://openalex.org/W6734815014","https://openalex.org/W6749542541"],"related_works":["https://openalex.org/W2058545256","https://openalex.org/W2394034449","https://openalex.org/W2904654231","https://openalex.org/W2999380399","https://openalex.org/W4210807885","https://openalex.org/W2248915580","https://openalex.org/W2059163921","https://openalex.org/W2051045034","https://openalex.org/W4304890870","https://openalex.org/W2126779451"],"abstract_inverted_index":{"Research":[0],"on":[1],"a":[2,93,132,143,172],"word-line":[3],"(WL)":[4],"driving":[5,102],"scheme":[6,30,77,103],"is":[7,19],"essential":[8],"because":[9,54],"the":[10,33,40,48,64,73,81,90,99,107,114,147,152],"effect":[11,34,82,108],"of":[12,35,55,63,83,92,109,151,166],"WL":[13,28,75,101,153],"parasitic":[14,36,56,84,110,154],"resistance":[15],"and":[16,87,120,160],"capacitance":[17,42],"(RC)":[18],"more":[20],"severe":[21],"for":[22,131,171],"high-capacity":[23],"NAND":[24,133,175],"flash":[25,176],"memories.":[26],"The":[27,136],"under-driving":[29,76],"(WLUDS)":[31],"mitigates":[32],"RC":[37,57,85,111,155],"by":[38,122],"reducing":[39],"coupling":[41],"between":[43],"WLs.":[44],"However,":[45],"WLUDS":[46],"increases":[47],"cell":[49],"threshold":[50],"voltage":[51,66],"(Vth)":[52],"distribution":[53],"variation,":[58],"which":[59],"causes":[60],"an":[61,124],"overshoot":[62],"programming":[65,148,168],"(VPGM).":[67],"In":[68],"this":[69],"study,":[70],"we":[71,162],"propose":[72],"variation-tolerant":[74],"(VTWLUDS)":[78],"to":[79,105],"reduce":[80,106],"variation":[86,112],"VPGMovershoot":[88],"through":[89],"use":[91],"three-phase":[94],"VPGMcontrol.":[95],"We":[96,117],"also":[97],"introduce":[98],"fast-verify":[100],"(FVWLDS)":[104],"in":[113],"verify":[115],"operation.":[116],"verified":[118],"VTWLUDS":[119,141,159],"FVWLDS":[121],"performing":[123],"HSPICE":[125],"simulation":[126,137],"with":[127],"Samsung's":[128],"transistor":[129],"model":[130],"peripheral":[134],"circuit.":[135],"results":[138],"showed":[139],"that":[140],"achieved":[142,163],"sufficient":[144],"Vthshift":[145],"during":[146],"operation":[149],"regardless":[150],"variation.":[156],"By":[157],"using":[158],"FVWLDS,":[161],"1304":[164],"\u03bcs":[165],"total":[167],"time":[169],"(TPROG)":[170],"512-Gb":[173],"planar-type":[174],"memory.":[177]},"counts_by_year":[{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":3},{"year":2019,"cited_by_count":1}],"updated_date":"2026-07-29T09:40:50.615796","created_date":"2025-10-10T00:00:00"}