{"id":"https://openalex.org/W2899389806","doi":"https://doi.org/10.1109/tvlsi.2018.2856528","title":"$In~Situ$ and In-Field Technique for Monitoring and Decelerating NBTI in 6T-SRAM Register Files","display_name":"$In~Situ$ and In-Field Technique for Monitoring and Decelerating NBTI in 6T-SRAM Register Files","publication_year":2018,"publication_date":"2018-07-31","ids":{"openalex":"https://openalex.org/W2899389806","doi":"https://doi.org/10.1109/tvlsi.2018.2856528","mag":"2899389806"},"language":"en","primary_location":{"id":"doi:10.1109/tvlsi.2018.2856528","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tvlsi.2018.2856528","pdf_url":null,"source":{"id":"https://openalex.org/S37538908","display_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","issn_l":"1063-8210","issn":["1063-8210","1557-9999"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5103094370","display_name":"Teng Yang","orcid":"https://orcid.org/0000-0002-9277-143X"},"institutions":[{"id":"https://openalex.org/I78577930","display_name":"Columbia University","ror":"https://ror.org/00hj8s172","country_code":"US","type":"education","lineage":["https://openalex.org/I78577930"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Teng Yang","raw_affiliation_strings":["Department of Electrical Engineering, Columbia University, New York, NY, USA"],"raw_orcid":"https://orcid.org/0000-0002-9277-143X","affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Columbia University, New York, NY, USA","institution_ids":["https://openalex.org/I78577930"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100723397","display_name":"Doyun Kim","orcid":"https://orcid.org/0000-0002-5976-457X"},"institutions":[{"id":"https://openalex.org/I78577930","display_name":"Columbia University","ror":"https://ror.org/00hj8s172","country_code":"US","type":"education","lineage":["https://openalex.org/I78577930"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Doyun Kim","raw_affiliation_strings":["Department of Electrical Engineering, Columbia University, New York, NY, USA"],"raw_orcid":"https://orcid.org/0000-0002-5976-457X","affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Columbia University, New York, NY, USA","institution_ids":["https://openalex.org/I78577930"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5075546577","display_name":"Jiangyi Li","orcid":"https://orcid.org/0000-0001-5859-5877"},"institutions":[{"id":"https://openalex.org/I78577930","display_name":"Columbia University","ror":"https://ror.org/00hj8s172","country_code":"US","type":"education","lineage":["https://openalex.org/I78577930"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jiangyi Li","raw_affiliation_strings":["Department of Electrical Engineering, Columbia University, New York, NY, USA"],"raw_orcid":"https://orcid.org/0000-0001-5859-5877","affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Columbia University, New York, NY, USA","institution_ids":["https://openalex.org/I78577930"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5049341354","display_name":"Peter R. Kinget","orcid":"https://orcid.org/0000-0002-5707-6394"},"institutions":[{"id":"https://openalex.org/I78577930","display_name":"Columbia University","ror":"https://ror.org/00hj8s172","country_code":"US","type":"education","lineage":["https://openalex.org/I78577930"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Peter R. Kinget","raw_affiliation_strings":["Department of Electrical Engineering, Columbia University, New York, NY, USA"],"raw_orcid":"https://orcid.org/0000-0002-5707-6394","affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Columbia University, New York, NY, USA","institution_ids":["https://openalex.org/I78577930"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5011887658","display_name":"Mingoo Seok","orcid":"https://orcid.org/0000-0002-9722-0979"},"institutions":[{"id":"https://openalex.org/I78577930","display_name":"Columbia University","ror":"https://ror.org/00hj8s172","country_code":"US","type":"education","lineage":["https://openalex.org/I78577930"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Mingoo Seok","raw_affiliation_strings":["Department of Electrical Engineering, Columbia University, New York, NY, USA"],"raw_orcid":"https://orcid.org/0000-0002-9722-0979","affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Columbia University, New York, NY, USA","institution_ids":["https://openalex.org/I78577930"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I78577930"],"apc_list":{"value":2645,"currency":"USD","value_usd":2645},"apc_paid":null,"fwci":0.4998,"has_fulltext":false,"cited_by_count":7,"citation_normalized_percentile":{"value":0.65301471,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":"26","issue":"11","first_page":"2241","last_page":"2253"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.7370749711990356},{"id":"https://openalex.org/keywords/degradation","display_name":"Degradation (telecommunications)","score":0.656464695930481},{"id":"https://openalex.org/keywords/negative-bias-temperature-instability","display_name":"Negative-bias temperature instability","score":0.6517809629440308},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5198283791542053},{"id":"https://openalex.org/keywords/algorithm","display_name":"Algorithm","score":0.43875184655189514},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3509267270565033},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.33771568536758423},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3329283595085144},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.32643288373947144},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.25307315587997437},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.24947795271873474}],"concepts":[{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.7370749711990356},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.656464695930481},{"id":"https://openalex.org/C557185","wikidata":"https://www.wikidata.org/wiki/Q6987194","display_name":"Negative-bias temperature instability","level":5,"score":0.6517809629440308},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5198283791542053},{"id":"https://openalex.org/C11413529","wikidata":"https://www.wikidata.org/wiki/Q8366","display_name":"Algorithm","level":1,"score":0.43875184655189514},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3509267270565033},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.33771568536758423},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3329283595085144},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.32643288373947144},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.25307315587997437},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.24947795271873474}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tvlsi.2018.2856528","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tvlsi.2018.2856528","pdf_url":null,"source":{"id":"https://openalex.org/S37538908","display_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","issn_l":"1063-8210","issn":["1063-8210","1557-9999"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[{"id":"https://openalex.org/G5415761988","display_name":"CAREER: Addressing Deepening Variability Challenges for Next-Generation Margin-Free VLSI Computing Platform Design","funder_award_id":"1453142","funder_id":"https://openalex.org/F4320306076","funder_display_name":"National Science Foundation"}],"funders":[{"id":"https://openalex.org/F4320306076","display_name":"National Science Foundation","ror":"https://ror.org/021nxhr62"},{"id":"https://openalex.org/F4320310822","display_name":"Catalyst Foundation","ror":"https://ror.org/012jwf593"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":45,"referenced_works":["https://openalex.org/W1577725099","https://openalex.org/W1966935108","https://openalex.org/W1970023301","https://openalex.org/W1984863066","https://openalex.org/W1990823448","https://openalex.org/W1992606304","https://openalex.org/W1998246226","https://openalex.org/W2007609366","https://openalex.org/W2025670213","https://openalex.org/W2047956117","https://openalex.org/W2048216333","https://openalex.org/W2059193309","https://openalex.org/W2060617458","https://openalex.org/W2065041903","https://openalex.org/W2069455478","https://openalex.org/W2089307123","https://openalex.org/W2099911327","https://openalex.org/W2112013772","https://openalex.org/W2113115586","https://openalex.org/W2114648586","https://openalex.org/W2124222584","https://openalex.org/W2125347149","https://openalex.org/W2127485220","https://openalex.org/W2134869654","https://openalex.org/W2136376683","https://openalex.org/W2142908374","https://openalex.org/W2144651789","https://openalex.org/W2144757190","https://openalex.org/W2146787584","https://openalex.org/W2150056343","https://openalex.org/W2170644629","https://openalex.org/W2172173999","https://openalex.org/W2537484341","https://openalex.org/W2543567411","https://openalex.org/W2729749234","https://openalex.org/W3141284234","https://openalex.org/W3149855342","https://openalex.org/W4235016542","https://openalex.org/W4251123232","https://openalex.org/W6634554421","https://openalex.org/W6652425211","https://openalex.org/W6662411385","https://openalex.org/W6676721779","https://openalex.org/W6677006570","https://openalex.org/W6684914670"],"related_works":["https://openalex.org/W3150866391","https://openalex.org/W2944990515","https://openalex.org/W2942040471","https://openalex.org/W2905252662","https://openalex.org/W2088008649","https://openalex.org/W2166033074","https://openalex.org/W2112214579","https://openalex.org/W2036808971","https://openalex.org/W2028220610","https://openalex.org/W2310523918"],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"a":[3,41,67,104,114,122,173,207],"technique":[4,28,63,110,194],"to":[5,56,120,203],"monitor":[6,121],"and":[7,58,136,143,150,179,201],"decelerate":[8,84,181],"transistor":[9],"threshold":[10],"voltage":[11],"(VTH)":[12],"degradation":[13,86,127,178,183],"caused":[14],"by":[15,87],"negative":[16],"bias":[17],"temperature":[18,57,132],"instability":[19],"(NBTI)":[20],"in":[21,30,40,91,113,156],"SRAM-based":[22],"register":[23],"files":[24],"(RFs).":[25],"The":[26,61,117,188],"monitoring":[27,62],"is":[29,44,54,64,97,195],"situ":[31,157],"as":[32],"it":[33],"can":[34,71,83,171],"directly":[35],"sense":[36],"the":[37,51,78,95,108,154,161,168,182,192,198],"VTHof":[38],"pMOSs":[39],"bitcell.":[42],"It":[43],"also":[45],"infield":[46],"(i.e.,":[47],"postchip":[48],"deployment)":[49],"since":[50],"sensor":[52],"output":[53],"robust":[55],"supply-voltage":[59,137],"variations.":[60],"complemented":[65],"with":[66,107],"software":[68],"framework":[69],"that":[70,167],"create":[72],"recovery":[73],"vectors":[74],"(RVSRV)":[75],"based":[76],"on":[77],"measured":[79],"VTHdegradation,":[80],"which":[81],"we":[82],"NBTI":[85,126,177],"storing":[88],"them":[89],"opportunistically":[90],"an":[92],"RF":[93,106,200],"when":[94],"system":[96],"at":[98],"stand-by":[99],"mode.":[100],"Test":[101],"chips":[102,165],"for":[103,197,206],"1-kb":[105,199],"proposed":[109,193],"are":[111,141,148],"prototyped":[112],"65-nm":[115],"process.":[116],"average":[118],"errors":[119,147],"considerable":[123],"amount":[124],"of":[125,176,184,191],"(>30-mV":[128],"VTii":[129],"degrading)":[130],"against":[131],"(20":[133],"\u00b0C-80":[134],"\u00b0C)":[135],"(0.5-1":[138],"V)":[139],"variations":[140],"19%":[142],"22%,":[144],"respectively.":[145],"These":[146],"4.4\u00d7":[149],"3.4\u00d7":[151],"smaller":[152],"than":[153],"previous":[155],"techniques.":[158],"In":[159],"addition,":[160],"experiments":[162],"across":[163],"multiple":[164],"show":[166],"generated":[169],"RVSRV":[170],"recover":[172],"good":[174],"portion":[175],"thus":[180],"data":[185],"retention":[186],"voltage.":[187],"area":[189],"overhead":[190],"27%":[196],"estimated":[202],"be":[204],"21%":[205],"4-kb":[208],"RF.":[209]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":2},{"year":2019,"cited_by_count":2}],"updated_date":"2026-08-21T09:56:20.448147","created_date":"2025-10-10T00:00:00"}