{"id":"https://openalex.org/W2770089378","doi":"https://doi.org/10.1109/tvlsi.2017.2766150","title":"A Dual-Data Line Read Scheme for High-Speed Low-Energy Resistive Nonvolatile Memories","display_name":"A Dual-Data Line Read Scheme for High-Speed Low-Energy Resistive Nonvolatile Memories","publication_year":2017,"publication_date":"2017-11-14","ids":{"openalex":"https://openalex.org/W2770089378","doi":"https://doi.org/10.1109/tvlsi.2017.2766150","mag":"2770089378"},"language":"en","primary_location":{"id":"doi:10.1109/tvlsi.2017.2766150","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tvlsi.2017.2766150","pdf_url":null,"source":{"id":"https://openalex.org/S37538908","display_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","issn_l":"1063-8210","issn":["1063-8210","1557-9999"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100701962","display_name":"Albert Lee","orcid":"https://orcid.org/0000-0002-0258-181X"},"institutions":[{"id":"https://openalex.org/I161318765","display_name":"University of California, Los Angeles","ror":"https://ror.org/046rm7j60","country_code":"US","type":"education","lineage":["https://openalex.org/I161318765"]},{"id":"https://openalex.org/I4210105647","display_name":"Inston (United States)","ror":"https://ror.org/01em1bx15","country_code":"US","type":"company","lineage":["https://openalex.org/I4210105647"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Albert Lee","raw_affiliation_strings":["Electrical Engineering Department, University of California at Los Angeles, Los Angeles, CA, USA","Inston Inc., Los Angeles, CA, USA"],"affiliations":[{"raw_affiliation_string":"Electrical Engineering Department, University of California at Los Angeles, Los Angeles, CA, USA","institution_ids":["https://openalex.org/I161318765"]},{"raw_affiliation_string":"Inston Inc., Los Angeles, CA, USA","institution_ids":["https://openalex.org/I4210105647"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5063582567","display_name":"Hochul Lee","orcid":"https://orcid.org/0000-0002-7740-9424"},"institutions":[{"id":"https://openalex.org/I4210105647","display_name":"Inston (United States)","ror":"https://ror.org/01em1bx15","country_code":"US","type":"company","lineage":["https://openalex.org/I4210105647"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Hochul Lee","raw_affiliation_strings":["Inston Inc., Los Angeles, CA, USA"],"affiliations":[{"raw_affiliation_string":"Inston Inc., Los Angeles, CA, USA","institution_ids":["https://openalex.org/I4210105647"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5000432682","display_name":"Farbod Ebrahimi","orcid":"https://orcid.org/0000-0002-5737-6872"},"institutions":[{"id":"https://openalex.org/I4210105647","display_name":"Inston (United States)","ror":"https://ror.org/01em1bx15","country_code":"US","type":"company","lineage":["https://openalex.org/I4210105647"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Farbod Ebrahimi","raw_affiliation_strings":["Inston Inc., Los Angeles, CA, USA"],"affiliations":[{"raw_affiliation_string":"Inston Inc., Los Angeles, CA, USA","institution_ids":["https://openalex.org/I4210105647"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5031424724","display_name":"Lam Bonnie","orcid":null},"institutions":[{"id":"https://openalex.org/I161318765","display_name":"University of California, Los Angeles","ror":"https://ror.org/046rm7j60","country_code":"US","type":"education","lineage":["https://openalex.org/I161318765"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Bonnie Lam","raw_affiliation_strings":["Electrical Engineering Department, University of California at Los Angeles, Los Angeles, CA, USA"],"affiliations":[{"raw_affiliation_string":"Electrical Engineering Department, University of California at Los Angeles, Los Angeles, CA, USA","institution_ids":["https://openalex.org/I161318765"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113829901","display_name":"Wei-Hao Chen","orcid":null},"institutions":[{"id":"https://openalex.org/I25846049","display_name":"National Tsing Hua University","ror":"https://ror.org/00zdnkx70","country_code":"TW","type":"education","lineage":["https://openalex.org/I25846049"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Wei-Hao Chen","raw_affiliation_strings":["National Tsing-Hua University, Hsinchu, Taiwan"],"affiliations":[{"raw_affiliation_string":"National Tsing-Hua University, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I25846049"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5023225287","display_name":"Meng\u2010Fan Chang","orcid":"https://orcid.org/0000-0001-6905-6350"},"institutions":[{"id":"https://openalex.org/I25846049","display_name":"National Tsing Hua University","ror":"https://ror.org/00zdnkx70","country_code":"TW","type":"education","lineage":["https://openalex.org/I25846049"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Meng-Fan Chang","raw_affiliation_strings":["National Tsing-Hua University, Hsinchu, Taiwan"],"affiliations":[{"raw_affiliation_string":"National Tsing-Hua University, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I25846049"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5016666318","display_name":"Pedram Khalili Amiri","orcid":"https://orcid.org/0000-0002-1539-1521"},"institutions":[{"id":"https://openalex.org/I4210105647","display_name":"Inston (United States)","ror":"https://ror.org/01em1bx15","country_code":"US","type":"company","lineage":["https://openalex.org/I4210105647"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Pedram Khalili Amiri","raw_affiliation_strings":["Inston Inc., Los Angeles, CA, USA"],"affiliations":[{"raw_affiliation_string":"Inston Inc., Los Angeles, CA, USA","institution_ids":["https://openalex.org/I4210105647"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100869128","display_name":"Kang-L. Wang","orcid":null},"institutions":[{"id":"https://openalex.org/I161318765","display_name":"University of California, Los Angeles","ror":"https://ror.org/046rm7j60","country_code":"US","type":"education","lineage":["https://openalex.org/I161318765"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Kang-L. Wang","raw_affiliation_strings":["Electrical Engineering Department, University of California at Los Angeles, Los Angeles, CA, USA"],"affiliations":[{"raw_affiliation_string":"Electrical Engineering Department, University of California at Los Angeles, Los Angeles, CA, USA","institution_ids":["https://openalex.org/I161318765"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":8,"corresponding_author_ids":["https://openalex.org/A5100701962"],"corresponding_institution_ids":["https://openalex.org/I161318765","https://openalex.org/I4210105647"],"apc_list":null,"apc_paid":null,"fwci":0.5827,"has_fulltext":false,"cited_by_count":6,"citation_normalized_percentile":{"value":0.7100379,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":"26","issue":"2","first_page":"272","last_page":"279"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9987999796867371,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.6903527975082397},{"id":"https://openalex.org/keywords/non-volatile-memory","display_name":"Non-volatile memory","score":0.6048455238342285},{"id":"https://openalex.org/keywords/memory-cell","display_name":"Memory cell","score":0.570599377155304},{"id":"https://openalex.org/keywords/cache","display_name":"Cache","score":0.5216996073722839},{"id":"https://openalex.org/keywords/line","display_name":"Line (geometry)","score":0.48855075240135193},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4799678325653076},{"id":"https://openalex.org/keywords/energy","display_name":"Energy (signal processing)","score":0.46895235776901245},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.46766436100006104},{"id":"https://openalex.org/keywords/degradation","display_name":"Degradation (telecommunications)","score":0.4507262706756592},{"id":"https://openalex.org/keywords/cpu-cache","display_name":"CPU cache","score":0.44826799631118774},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4389899969100952},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4250807762145996},{"id":"https://openalex.org/keywords/resistive-random-access-memory","display_name":"Resistive random-access memory","score":0.4247603118419647},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.19646897912025452},{"id":"https://openalex.org/keywords/parallel-computing","display_name":"Parallel computing","score":0.18344199657440186},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.14996981620788574},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.11667117476463318},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.08193537592887878}],"concepts":[{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.6903527975082397},{"id":"https://openalex.org/C177950962","wikidata":"https://www.wikidata.org/wiki/Q10997658","display_name":"Non-volatile memory","level":2,"score":0.6048455238342285},{"id":"https://openalex.org/C2776638159","wikidata":"https://www.wikidata.org/wiki/Q18343761","display_name":"Memory cell","level":4,"score":0.570599377155304},{"id":"https://openalex.org/C115537543","wikidata":"https://www.wikidata.org/wiki/Q165596","display_name":"Cache","level":2,"score":0.5216996073722839},{"id":"https://openalex.org/C198352243","wikidata":"https://www.wikidata.org/wiki/Q37105","display_name":"Line (geometry)","level":2,"score":0.48855075240135193},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4799678325653076},{"id":"https://openalex.org/C186370098","wikidata":"https://www.wikidata.org/wiki/Q442787","display_name":"Energy (signal processing)","level":2,"score":0.46895235776901245},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.46766436100006104},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.4507262706756592},{"id":"https://openalex.org/C189783530","wikidata":"https://www.wikidata.org/wiki/Q352090","display_name":"CPU cache","level":3,"score":0.44826799631118774},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4389899969100952},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4250807762145996},{"id":"https://openalex.org/C182019814","wikidata":"https://www.wikidata.org/wiki/Q1143830","display_name":"Resistive random-access memory","level":3,"score":0.4247603118419647},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.19646897912025452},{"id":"https://openalex.org/C173608175","wikidata":"https://www.wikidata.org/wiki/Q232661","display_name":"Parallel computing","level":1,"score":0.18344199657440186},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.14996981620788574},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.11667117476463318},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.08193537592887878},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tvlsi.2017.2766150","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tvlsi.2017.2766150","pdf_url":null,"source":{"id":"https://openalex.org/S37538908","display_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","issn_l":"1063-8210","issn":["1063-8210","1557-9999"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.9100000262260437,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[{"id":"https://openalex.org/G8179700931","display_name":null,"funder_award_id":"FA8650-16-7655","funder_id":"https://openalex.org/F4320332180","funder_display_name":"Defense Advanced Research Projects Agency"}],"funders":[{"id":"https://openalex.org/F4320332180","display_name":"Defense Advanced Research Projects Agency","ror":"https://ror.org/02caytj08"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":46,"referenced_works":["https://openalex.org/W1520115325","https://openalex.org/W1522394535","https://openalex.org/W1575483315","https://openalex.org/W1966939297","https://openalex.org/W1972197169","https://openalex.org/W1988431200","https://openalex.org/W1991901730","https://openalex.org/W1999458342","https://openalex.org/W2000716942","https://openalex.org/W2003243790","https://openalex.org/W2010795939","https://openalex.org/W2014744284","https://openalex.org/W2020003503","https://openalex.org/W2034108179","https://openalex.org/W2038941060","https://openalex.org/W2059892508","https://openalex.org/W2064231040","https://openalex.org/W2072610908","https://openalex.org/W2073449168","https://openalex.org/W2090549658","https://openalex.org/W2096445739","https://openalex.org/W2105827747","https://openalex.org/W2144587765","https://openalex.org/W2160796815","https://openalex.org/W2178102281","https://openalex.org/W2289106931","https://openalex.org/W2290939274","https://openalex.org/W2292149669","https://openalex.org/W2314921565","https://openalex.org/W2331328369","https://openalex.org/W2584331212","https://openalex.org/W2584335437","https://openalex.org/W2584580867","https://openalex.org/W2584875058","https://openalex.org/W2585242491","https://openalex.org/W2585561899","https://openalex.org/W2585760377","https://openalex.org/W6631253968","https://openalex.org/W6634224931","https://openalex.org/W6652957285","https://openalex.org/W6666382256","https://openalex.org/W6668730515","https://openalex.org/W6696812061","https://openalex.org/W6696981295","https://openalex.org/W6732863850","https://openalex.org/W6733404283"],"related_works":["https://openalex.org/W2076211355","https://openalex.org/W2533127403","https://openalex.org/W2007070351","https://openalex.org/W2033811947","https://openalex.org/W2790329865","https://openalex.org/W2183989414","https://openalex.org/W1551399929","https://openalex.org/W2410132916","https://openalex.org/W2162174949","https://openalex.org/W2104937488"],"abstract_inverted_index":{"Resistance-based":[0],"memory":[1,51,94],"devices":[2,24],"are":[3],"considered":[4],"as":[5,13,15,54],"a":[6,45,107,173],"strong":[7],"candidate":[8],"for":[9],"next-generation":[10],"nonvolatile":[11],"memories":[12],"well":[14],"potential":[16],"application":[17],"in":[18,77,152],"high":[19],"density":[20],"embedded":[21],"cache.":[22],"These":[23],"can":[25,161],"be":[26],"programmed":[27,41],"to":[28,71,100,122,172],"different":[29],"resistance":[30,63],"states":[31],"by":[32,43,138,165,193],"applying":[33],"electrical":[34],"bias.":[35],"Read":[36],"operation":[37,99],"then":[38],"senses":[39],"the":[40,50,55,58,66,81,93,97,115,118,131,158,184,188],"state":[42],"discharging":[44],"shared":[46],"data":[47,109,120],"line":[48,84,121],"through":[49,92,144],"cell.":[52],"However,":[53],"dimensions":[56],"of":[57,168,177],"device":[59,181],"scale":[60],"down,":[61],"its":[62],"increases":[64],"and":[65,75,111,126,142],"distribution":[67],"widens,":[68],"which":[69,170],"leads":[70],"reduced":[72],"sensing":[73,124,163,174,189],"margins":[74,164],"degradation":[76],"read":[78,86,98,133,186],"performance.":[79],"In":[80],"proposed":[82],"dual-data":[83],"(DDL)":[85],"scheme,":[87],"we":[88],"recycle":[89],"current":[90],"flowing":[91],"cell":[95],"during":[96],"create":[101],"an":[102,147,166],"additional":[103],"voltage":[104],"swing":[105],"on":[106,117,146],"secondary":[108],"line,":[110],"combine":[112],"it":[113],"with":[114,130],"signal":[116],"original":[119],"reduce":[123],"time":[125,175],"energy.":[127],"Performance":[128],"comparison":[129],"conventional":[132],"scheme":[134,160],"is":[135,191],"derived":[136],"theoretically":[137],"using":[139],"circuit":[140],"analysis":[141],"verified":[143],"simulation":[145],"array":[148],"critical":[149],"path":[150],"constructed":[151],"65-nm":[153],"technology.":[154],"Results":[155],"show":[156],"that":[157],"DDL":[159],"improve":[162],"average":[167],"86%,":[169],"translates":[171],"reduction":[176],"47%,":[178],"across":[179],"various":[180],"conditions.":[182],"For":[183],"same":[185],"performance,":[187],"energy":[190],"decreased":[192],"48%.":[194]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":2},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":1}],"updated_date":"2026-03-27T05:58:40.876381","created_date":"2025-10-10T00:00:00"}