{"id":"https://openalex.org/W2518395263","doi":"https://doi.org/10.1109/tvlsi.2016.2598160","title":"Bias-Induced Healing of $V_{\\text {min}}$ Failures in Advanced SRAM Arrays","display_name":"Bias-Induced Healing of $V_{\\text {min}}$ Failures in Advanced SRAM Arrays","publication_year":2016,"publication_date":"2016-09-02","ids":{"openalex":"https://openalex.org/W2518395263","doi":"https://doi.org/10.1109/tvlsi.2016.2598160","mag":"2518395263"},"language":"en","primary_location":{"id":"doi:10.1109/tvlsi.2016.2598160","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tvlsi.2016.2598160","pdf_url":null,"source":{"id":"https://openalex.org/S37538908","display_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","issn_l":"1063-8210","issn":["1063-8210","1557-9999"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5040237261","display_name":"R. Mann","orcid":"https://orcid.org/0000-0001-8373-2052"},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Randy W. Mann","raw_affiliation_strings":["Globalfoundries, Malta, NY, USA"],"affiliations":[{"raw_affiliation_string":"Globalfoundries, Malta, NY, USA","institution_ids":["https://openalex.org/I35662394"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5062067184","display_name":"William E. McMahon","orcid":"https://orcid.org/0000-0001-5036-2032"},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"William McMahon","raw_affiliation_strings":["Globalfoundries, Malta, NY, USA"],"affiliations":[{"raw_affiliation_string":"Globalfoundries, Malta, NY, USA","institution_ids":["https://openalex.org/I35662394"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5026860093","display_name":"Yoann Mamy Randriamihaja","orcid":null},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Yoann Mamy Randriamihaja","raw_affiliation_strings":["Globalfoundries, Malta, NY, USA"],"affiliations":[{"raw_affiliation_string":"Globalfoundries, Malta, NY, USA","institution_ids":["https://openalex.org/I35662394"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102152931","display_name":"Yuncheng Song","orcid":null},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Yuncheng Song","raw_affiliation_strings":["Globalfoundries, Malta, NY, USA"],"affiliations":[{"raw_affiliation_string":"Globalfoundries, Malta, NY, USA","institution_ids":["https://openalex.org/I35662394"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5090705761","display_name":"Ajay Anand Kallianpur","orcid":null},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Ajay Anand Kallianpur","raw_affiliation_strings":["Globalfoundries, Malta, NY, USA"],"affiliations":[{"raw_affiliation_string":"Globalfoundries, Malta, NY, USA","institution_ids":["https://openalex.org/I35662394"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5035866142","display_name":"Sheng Quan Xie","orcid":"https://orcid.org/0000-0003-2641-2620"},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Sheng Xie","raw_affiliation_strings":["Globalfoundries, Malta, NY, USA"],"affiliations":[{"raw_affiliation_string":"Globalfoundries, Malta, NY, USA","institution_ids":["https://openalex.org/I35662394"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112213187","display_name":"Akhilesh Gautam","orcid":null},"institutions":[{"id":"https://openalex.org/I4210088951","display_name":"Synopsys (United States)","ror":"https://ror.org/013by2m91","country_code":"US","type":"company","lineage":["https://openalex.org/I4210088951"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Akhilesh Gautam","raw_affiliation_strings":["Synopsys, Mountain View, CA, USA"],"affiliations":[{"raw_affiliation_string":"Synopsys, Mountain View, CA, USA","institution_ids":["https://openalex.org/I4210088951"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113348419","display_name":"Joseph Versaggi","orcid":null},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Joseph Versaggi","raw_affiliation_strings":["Globalfoundries, Malta, NY, USA"],"affiliations":[{"raw_affiliation_string":"Globalfoundries, Malta, NY, USA","institution_ids":["https://openalex.org/I35662394"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5000722518","display_name":"B. Parameshwaran","orcid":null},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Biju Parameshwaran","raw_affiliation_strings":["Globalfoundries, Sunnyvale, CA, USA"],"affiliations":[{"raw_affiliation_string":"Globalfoundries, Sunnyvale, CA, USA","institution_ids":["https://openalex.org/I35662394"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5081218294","display_name":"C. Weintraub","orcid":null},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Chad E. Weintraub","raw_affiliation_strings":["Globalfoundries, Austin, TX, USA"],"affiliations":[{"raw_affiliation_string":"Globalfoundries, Austin, TX, USA","institution_ids":["https://openalex.org/I35662394"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":10,"corresponding_author_ids":["https://openalex.org/A5040237261"],"corresponding_institution_ids":["https://openalex.org/I35662394"],"apc_list":null,"apc_paid":null,"fwci":0.1838,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.57845792,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":"25","issue":"2","first_page":"660","last_page":"669"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.880927324295044},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.7047896981239319},{"id":"https://openalex.org/keywords/very-large-scale-integration","display_name":"Very-large-scale integration","score":0.6714909672737122},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.5734334588050842},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5323970913887024},{"id":"https://openalex.org/keywords/negative-bias-temperature-instability","display_name":"Negative-bias temperature instability","score":0.4991190433502197},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.49576815962791443},{"id":"https://openalex.org/keywords/guard","display_name":"Guard (computer science)","score":0.43091684579849243},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.39315178990364075},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.32684212923049927},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.27788805961608887},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.26114946603775024},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.24342653155326843},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.23252996802330017},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.10699021816253662}],"concepts":[{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.880927324295044},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.7047896981239319},{"id":"https://openalex.org/C14580979","wikidata":"https://www.wikidata.org/wiki/Q876049","display_name":"Very-large-scale integration","level":2,"score":0.6714909672737122},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.5734334588050842},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5323970913887024},{"id":"https://openalex.org/C557185","wikidata":"https://www.wikidata.org/wiki/Q6987194","display_name":"Negative-bias temperature instability","level":5,"score":0.4991190433502197},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.49576815962791443},{"id":"https://openalex.org/C141141315","wikidata":"https://www.wikidata.org/wiki/Q2379942","display_name":"Guard (computer science)","level":2,"score":0.43091684579849243},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.39315178990364075},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.32684212923049927},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.27788805961608887},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.26114946603775024},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.24342653155326843},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.23252996802330017},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.10699021816253662},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.0},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tvlsi.2016.2598160","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tvlsi.2016.2598160","pdf_url":null,"source":{"id":"https://openalex.org/S37538908","display_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","issn_l":"1063-8210","issn":["1063-8210","1557-9999"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/9","display_name":"Industry, innovation and infrastructure","score":0.5}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":23,"referenced_works":["https://openalex.org/W1966571707","https://openalex.org/W1970023301","https://openalex.org/W1972076479","https://openalex.org/W1997825961","https://openalex.org/W2002611358","https://openalex.org/W2002612140","https://openalex.org/W2092277707","https://openalex.org/W2096035326","https://openalex.org/W2098045174","https://openalex.org/W2098805283","https://openalex.org/W2114330343","https://openalex.org/W2123278390","https://openalex.org/W2124007645","https://openalex.org/W2127763613","https://openalex.org/W2133481780","https://openalex.org/W2140823559","https://openalex.org/W2170569687","https://openalex.org/W2172203429","https://openalex.org/W2173999255","https://openalex.org/W2552594646","https://openalex.org/W3142403821","https://openalex.org/W4239927061","https://openalex.org/W6649741387"],"related_works":["https://openalex.org/W3151633427","https://openalex.org/W2212894501","https://openalex.org/W2793465010","https://openalex.org/W3024050170","https://openalex.org/W4293253840","https://openalex.org/W4378977321","https://openalex.org/W3150866391","https://openalex.org/W2112214579","https://openalex.org/W2310523918","https://openalex.org/W4200470254"],"abstract_inverted_index":{"A":[0],"novel":[1],"bias-induced":[2],"healing":[3],"of":[4,51,60,70,93,100,103],"address":[5],"specific":[6],"failing":[7],"bits":[8,64],"in":[9,20,33,41,77,84],"VLSI":[10,85],"SRAM":[11,61,86,95],"functional":[12],"arrays":[13,96],"is":[14,75],"demonstrated":[15,76],"for":[16],"the":[17,53,57,91,101,104],"first":[18],"time":[19],"advanced":[21,42],"CMOS":[22,43],"nodes.":[23],"Aging":[24],"effects":[25],"due":[26],"to":[27,62],"bias":[28],"temperature":[29],"instability":[30],"(BTI)":[31],"resulting":[32],"device":[34],"shifts":[35],"are":[36],"a":[37,49],"well-known":[38],"reliability":[39],"problem":[40],"technologies.":[44],"We":[45],"propose":[46],"and":[47,56,80,97],"demonstrate":[48],"method":[50,74,89],"exploiting":[52],"BTI":[54],"mechanism":[55],"addressing":[58],"capability":[59],"recover":[63],"that":[65],"fail":[66],"during":[67],"stress.":[68],"Recovery":[69],"failures":[71],"using":[72],"this":[73],"both":[78],"20-":[79],"14-nm":[81],"technology":[82],"nodes":[83],"arrays.":[87],"This":[88],"introduces":[90],"possibility":[92],"self-healing":[94],"overcomes":[98],"many":[99],"limitations":[102],"conventional":[105],"industry":[106],"voltage-guard-band":[107],"approach.":[108]},"counts_by_year":[{"year":2021,"cited_by_count":1},{"year":2017,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}