{"id":"https://openalex.org/W2323614752","doi":"https://doi.org/10.1109/tvlsi.2016.2532878","title":"Corner-Aware Dynamic Gate Voltage Scheme to Achieve High Read Yield in STT-RAM","display_name":"Corner-Aware Dynamic Gate Voltage Scheme to Achieve High Read Yield in STT-RAM","publication_year":2016,"publication_date":"2016-03-15","ids":{"openalex":"https://openalex.org/W2323614752","doi":"https://doi.org/10.1109/tvlsi.2016.2532878","mag":"2323614752"},"language":"en","primary_location":{"id":"doi:10.1109/tvlsi.2016.2532878","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tvlsi.2016.2532878","pdf_url":null,"source":{"id":"https://openalex.org/S37538908","display_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","issn_l":"1063-8210","issn":["1063-8210","1557-9999"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5103187291","display_name":"Sara Choi","orcid":"https://orcid.org/0000-0002-4179-7680"},"institutions":[{"id":"https://openalex.org/I193775966","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96","country_code":"KR","type":"education","lineage":["https://openalex.org/I193775966"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Sara Choi","raw_affiliation_strings":["School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea"],"affiliations":[{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea","institution_ids":["https://openalex.org/I193775966"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5089907396","display_name":"Taehui Na","orcid":"https://orcid.org/0000-0001-8823-0625"},"institutions":[{"id":"https://openalex.org/I193775966","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96","country_code":"KR","type":"education","lineage":["https://openalex.org/I193775966"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Taehui Na","raw_affiliation_strings":["School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea"],"affiliations":[{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea","institution_ids":["https://openalex.org/I193775966"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100451482","display_name":"Jisu Kim","orcid":"https://orcid.org/0009-0000-6910-5976"},"institutions":[{"id":"https://openalex.org/I193775966","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96","country_code":"KR","type":"education","lineage":["https://openalex.org/I193775966"]},{"id":"https://openalex.org/I4210111675","display_name":"Market Matters","ror":"https://ror.org/021yan307","country_code":"US","type":"nonprofit","lineage":["https://openalex.org/I4210111675"]},{"id":"https://openalex.org/I4210087596","display_name":"Qualcomm (United States)","ror":"https://ror.org/002zrf773","country_code":"US","type":"company","lineage":["https://openalex.org/I4210087596"]}],"countries":["KR","US"],"is_corresponding":false,"raw_author_name":"Jisu Kim","raw_affiliation_strings":["Qualcomm Inc., San Diego, CA, USA","School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea"],"affiliations":[{"raw_affiliation_string":"Qualcomm Inc., San Diego, CA, USA","institution_ids":["https://openalex.org/I4210087596","https://openalex.org/I4210111675"]},{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea","institution_ids":["https://openalex.org/I193775966"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5064984422","display_name":"Jung Pill Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I193775966","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96","country_code":"KR","type":"education","lineage":["https://openalex.org/I193775966"]},{"id":"https://openalex.org/I4210111675","display_name":"Market Matters","ror":"https://ror.org/021yan307","country_code":"US","type":"nonprofit","lineage":["https://openalex.org/I4210111675"]},{"id":"https://openalex.org/I4210087596","display_name":"Qualcomm (United States)","ror":"https://ror.org/002zrf773","country_code":"US","type":"company","lineage":["https://openalex.org/I4210087596"]}],"countries":["KR","US"],"is_corresponding":false,"raw_author_name":"Jung Pill Kim","raw_affiliation_strings":["Qualcomm Inc., San Diego, CA, USA","School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea"],"affiliations":[{"raw_affiliation_string":"Qualcomm Inc., San Diego, CA, USA","institution_ids":["https://openalex.org/I4210087596","https://openalex.org/I4210111675"]},{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea","institution_ids":["https://openalex.org/I193775966"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103061707","display_name":"Seung H. Kang","orcid":"https://orcid.org/0000-0003-4270-9918"},"institutions":[{"id":"https://openalex.org/I4210111675","display_name":"Market Matters","ror":"https://ror.org/021yan307","country_code":"US","type":"nonprofit","lineage":["https://openalex.org/I4210111675"]},{"id":"https://openalex.org/I4210087596","display_name":"Qualcomm (United States)","ror":"https://ror.org/002zrf773","country_code":"US","type":"company","lineage":["https://openalex.org/I4210087596"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Seung H. Kang","raw_affiliation_strings":["Qualcomm Inc., San Diego, CA, USA"],"affiliations":[{"raw_affiliation_string":"Qualcomm Inc., San Diego, CA, USA","institution_ids":["https://openalex.org/I4210087596","https://openalex.org/I4210111675"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5037010076","display_name":"Seong\u2010Ook Jung","orcid":"https://orcid.org/0000-0003-0757-2581"},"institutions":[{"id":"https://openalex.org/I193775966","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96","country_code":"KR","type":"education","lineage":["https://openalex.org/I193775966"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Seong-Ook Jung","raw_affiliation_strings":["School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea"],"affiliations":[{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea","institution_ids":["https://openalex.org/I193775966"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":6,"corresponding_author_ids":["https://openalex.org/A5103187291"],"corresponding_institution_ids":["https://openalex.org/I193775966"],"apc_list":null,"apc_paid":null,"fwci":0.47856605,"has_fulltext":false,"cited_by_count":5,"citation_normalized_percentile":{"value":0.70500547,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":"24","issue":"9","first_page":"2851","last_page":"2860"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9987999796867371,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9987999796867371,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.542113184928894},{"id":"https://openalex.org/keywords/scheme","display_name":"Scheme (mathematics)","score":0.5316040515899658},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.5115986466407776},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4907265901565552},{"id":"https://openalex.org/keywords/yield","display_name":"Yield (engineering)","score":0.48944464325904846},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.45631277561187744},{"id":"https://openalex.org/keywords/very-large-scale-integration","display_name":"Very-large-scale integration","score":0.4356604814529419},{"id":"https://openalex.org/keywords/non-volatile-memory","display_name":"Non-volatile memory","score":0.42716172337532043},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.4154835343360901},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.36580222845077515},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.28814697265625},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.2879275679588318},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.2581166625022888},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.252701997756958},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.2101280391216278},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.11345356702804565}],"concepts":[{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.542113184928894},{"id":"https://openalex.org/C77618280","wikidata":"https://www.wikidata.org/wiki/Q1155772","display_name":"Scheme (mathematics)","level":2,"score":0.5316040515899658},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.5115986466407776},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4907265901565552},{"id":"https://openalex.org/C134121241","wikidata":"https://www.wikidata.org/wiki/Q899301","display_name":"Yield (engineering)","level":2,"score":0.48944464325904846},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.45631277561187744},{"id":"https://openalex.org/C14580979","wikidata":"https://www.wikidata.org/wiki/Q876049","display_name":"Very-large-scale integration","level":2,"score":0.4356604814529419},{"id":"https://openalex.org/C177950962","wikidata":"https://www.wikidata.org/wiki/Q10997658","display_name":"Non-volatile memory","level":2,"score":0.42716172337532043},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.4154835343360901},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.36580222845077515},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.28814697265625},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.2879275679588318},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.2581166625022888},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.252701997756958},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.2101280391216278},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.11345356702804565},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0},{"id":"https://openalex.org/C134306372","wikidata":"https://www.wikidata.org/wiki/Q7754","display_name":"Mathematical analysis","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tvlsi.2016.2532878","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tvlsi.2016.2532878","pdf_url":null,"source":{"id":"https://openalex.org/S37538908","display_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","issn_l":"1063-8210","issn":["1063-8210","1557-9999"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.7400000095367432,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":38,"referenced_works":["https://openalex.org/W1967035245","https://openalex.org/W1970481022","https://openalex.org/W1996356878","https://openalex.org/W2000818868","https://openalex.org/W2001108445","https://openalex.org/W2017569700","https://openalex.org/W2019228457","https://openalex.org/W2035257891","https://openalex.org/W2043393912","https://openalex.org/W2056511998","https://openalex.org/W2057386187","https://openalex.org/W2074628056","https://openalex.org/W2082960646","https://openalex.org/W2096445739","https://openalex.org/W2101328080","https://openalex.org/W2104500100","https://openalex.org/W2110276925","https://openalex.org/W2117889325","https://openalex.org/W2120699192","https://openalex.org/W2122287325","https://openalex.org/W2130436742","https://openalex.org/W2139052244","https://openalex.org/W2140392630","https://openalex.org/W2141626281","https://openalex.org/W2142571770","https://openalex.org/W2150938923","https://openalex.org/W2156728623","https://openalex.org/W2159904000","https://openalex.org/W2162020806","https://openalex.org/W2174116549","https://openalex.org/W2327150258","https://openalex.org/W2543205889","https://openalex.org/W2788575652","https://openalex.org/W6659307720","https://openalex.org/W6664507615","https://openalex.org/W6677722002","https://openalex.org/W6683132901","https://openalex.org/W6684149499"],"related_works":["https://openalex.org/W4283025278","https://openalex.org/W2082432309","https://openalex.org/W817174743","https://openalex.org/W2050492524","https://openalex.org/W2998315020","https://openalex.org/W1976665945","https://openalex.org/W3016208414","https://openalex.org/W2104790384","https://openalex.org/W4254068099","https://openalex.org/W2071775671"],"abstract_inverted_index":{"As":[0],"the":[1,6,25,30,38,48,103,110,118,123,140,146],"technology":[2,84],"node":[3],"scales":[4],"down,":[5],"spin-transfer-torque":[7],"random":[8],"access":[9],"memory":[10,18],"(STT-RAM)":[11],"has":[12,76],"been":[13],"considered":[14],"as":[15,42,44],"a":[16,60,64,82,91,150,175],"promising":[17],"solution":[19],"owing":[20],"to":[21,35,97],"its":[22],"scalability.":[23],"However,":[24],"increased":[26],"process":[27],"variation":[28,53],"and":[29,72,165],"reduced":[31],"supply":[32],"voltage":[33,95],"lead":[34],"degradation":[36],"in":[37,47,68,81],"sensing":[39,66,112,119,163],"yield":[40],"(SY)":[41],"well":[43],"an":[45,78],"increase":[46],"read":[49,125,169],"disturbance":[50],"probability.":[51],"Temperature":[52],"further":[54],"aggravates":[55],"this":[56,87,108],"phenomenon.":[57],"Thus,":[58],"achieving":[59,122],"target":[61,124,151],"SY":[62,152],"with":[63,159,172],"lower":[65,162,168],"current":[67,164],"all":[69],"process,":[70],"voltage,":[71],"temperature":[73],"(PVT)":[74],"corners":[75],"become":[77],"important":[79],"issue":[80],"deep-submicrometer":[83],"node.":[85],"In":[86],"paper,":[88],"we":[89],"propose":[90],"corner-aware":[92],"dynamic":[93],"gate":[94,177],"scheme":[96,148],"achieve":[98],"constant-current":[99],"sensing,":[100],"regardless":[101],"of":[102,153],"PVT":[104],"variations.":[105],"By":[106],"adopting":[107],"scheme,":[109],"state-of-the-art":[111],"circuits":[113],"(SCs)":[114],"can":[115],"significantly":[116],"reduce":[117],"current,":[120],"while":[121],"yield.":[126],"The":[127],"Monte":[128],"Carlo":[129],"HSPICE":[130],"simulation":[131],"results":[132],"using":[133,174],"industry-compatible":[134],"45-nm":[135],"model":[136],"parameters":[137],"show":[138],"that":[139,144,173],"offset-canceling":[141],"dual-stage":[142],"SC":[143],"uses":[145],"proposed":[147],"satisfies":[149],"six-sigma":[154],"(96.34%":[155],"for":[156],"32":[157],"Mb)":[158],"two":[160,166],"times":[161,167],"energy":[170],"compared":[171],"fixed":[176],"voltage.":[178]},"counts_by_year":[{"year":2022,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2017,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}