{"id":"https://openalex.org/W2328978473","doi":"https://doi.org/10.1109/tvlsi.2016.2520658","title":"System-Level Modeling of Microprocessor Reliability Degradation Due to Bias Temperature Instability and Hot Carrier Injection","display_name":"System-Level Modeling of Microprocessor Reliability Degradation Due to Bias Temperature Instability and Hot Carrier Injection","publication_year":2016,"publication_date":"2016-02-25","ids":{"openalex":"https://openalex.org/W2328978473","doi":"https://doi.org/10.1109/tvlsi.2016.2520658","mag":"2328978473"},"language":"en","primary_location":{"id":"doi:10.1109/tvlsi.2016.2520658","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tvlsi.2016.2520658","pdf_url":null,"source":{"id":"https://openalex.org/S37538908","display_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","issn_l":"1063-8210","issn":["1063-8210","1557-9999"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5011064659","display_name":"Chang-Chih Chen","orcid":null},"institutions":[{"id":"https://openalex.org/I1342911587","display_name":"Oracle (United States)","ror":"https://ror.org/006c77m33","country_code":"US","type":"company","lineage":["https://openalex.org/I1342911587"]},{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Chang-Chih Chen","raw_affiliation_strings":["Oracle, Santa Clara, CA, USA","School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA"],"affiliations":[{"raw_affiliation_string":"Oracle, Santa Clara, CA, USA","institution_ids":["https://openalex.org/I1342911587"]},{"raw_affiliation_string":"School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5014655929","display_name":"Taizhi Liu","orcid":"https://orcid.org/0000-0001-5057-4916"},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Taizhi Liu","raw_affiliation_strings":["School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA"],"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5032107826","display_name":"Linda Milor","orcid":"https://orcid.org/0000-0002-8244-4793"},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Linda Milor","raw_affiliation_strings":["School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA"],"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA","institution_ids":["https://openalex.org/I130701444"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5011064659"],"corresponding_institution_ids":["https://openalex.org/I130701444","https://openalex.org/I1342911587"],"apc_list":null,"apc_paid":null,"fwci":1.8376,"has_fulltext":false,"cited_by_count":22,"citation_normalized_percentile":{"value":0.86282899,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":98},"biblio":{"volume":"24","issue":"8","first_page":"2712","last_page":"2725"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/microprocessor","display_name":"Microprocessor","score":0.8395439386367798},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.7512496709823608},{"id":"https://openalex.org/keywords/negative-bias-temperature-instability","display_name":"Negative-bias temperature instability","score":0.7300645709037781},{"id":"https://openalex.org/keywords/degradation","display_name":"Degradation (telecommunications)","score":0.6628279685974121},{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.6420305967330933},{"id":"https://openalex.org/keywords/noise","display_name":"Noise (video)","score":0.5239567756652832},{"id":"https://openalex.org/keywords/circuit-reliability","display_name":"Circuit reliability","score":0.5175351500511169},{"id":"https://openalex.org/keywords/hot-carrier-injection","display_name":"Hot-carrier injection","score":0.5096333026885986},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.49650150537490845},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4851551651954651},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.4439655542373657},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.3879808187484741},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.3516417145729065},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.34832143783569336},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.26632168889045715},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2636079490184784},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.2630577087402344},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.2039790153503418},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.12068125605583191},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.11324617266654968},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.07958996295928955}],"concepts":[{"id":"https://openalex.org/C2780728072","wikidata":"https://www.wikidata.org/wiki/Q5297","display_name":"Microprocessor","level":2,"score":0.8395439386367798},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.7512496709823608},{"id":"https://openalex.org/C557185","wikidata":"https://www.wikidata.org/wiki/Q6987194","display_name":"Negative-bias temperature instability","level":5,"score":0.7300645709037781},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.6628279685974121},{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.6420305967330933},{"id":"https://openalex.org/C99498987","wikidata":"https://www.wikidata.org/wiki/Q2210247","display_name":"Noise (video)","level":3,"score":0.5239567756652832},{"id":"https://openalex.org/C2778309119","wikidata":"https://www.wikidata.org/wiki/Q5121614","display_name":"Circuit reliability","level":4,"score":0.5175351500511169},{"id":"https://openalex.org/C73500089","wikidata":"https://www.wikidata.org/wiki/Q2445876","display_name":"Hot-carrier injection","level":4,"score":0.5096333026885986},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.49650150537490845},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4851551651954651},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.4439655542373657},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.3879808187484741},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3516417145729065},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.34832143783569336},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.26632168889045715},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2636079490184784},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.2630577087402344},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.2039790153503418},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.12068125605583191},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.11324617266654968},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.07958996295928955},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C115961682","wikidata":"https://www.wikidata.org/wiki/Q860623","display_name":"Image (mathematics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tvlsi.2016.2520658","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tvlsi.2016.2520658","pdf_url":null,"source":{"id":"https://openalex.org/S37538908","display_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","issn_l":"1063-8210","issn":["1063-8210","1557-9999"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.5799999833106995}],"awards":[{"id":"https://openalex.org/G1321058349","display_name":null,"funder_award_id":"HR0011-11-1-0011","funder_id":"https://openalex.org/F4320332180","funder_display_name":"Defense Advanced Research Projects Agency"},{"id":"https://openalex.org/G8345802898","display_name":null,"funder_award_id":"116786","funder_id":"https://openalex.org/F4320306076","funder_display_name":"National Science Foundation"}],"funders":[{"id":"https://openalex.org/F4320306076","display_name":"National Science Foundation","ror":"https://ror.org/021nxhr62"},{"id":"https://openalex.org/F4320332180","display_name":"Defense Advanced Research Projects Agency","ror":"https://ror.org/02caytj08"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":59,"referenced_works":["https://openalex.org/W571322228","https://openalex.org/W761701182","https://openalex.org/W835874665","https://openalex.org/W1529164337","https://openalex.org/W1561603855","https://openalex.org/W1600691640","https://openalex.org/W1862078998","https://openalex.org/W1979462621","https://openalex.org/W1986415905","https://openalex.org/W1987145716","https://openalex.org/W1993597348","https://openalex.org/W1995318830","https://openalex.org/W1995998773","https://openalex.org/W1996048930","https://openalex.org/W1998810909","https://openalex.org/W2002612140","https://openalex.org/W2019449960","https://openalex.org/W2025999136","https://openalex.org/W2028337423","https://openalex.org/W2041527398","https://openalex.org/W2043294426","https://openalex.org/W2046284437","https://openalex.org/W2069411775","https://openalex.org/W2069668939","https://openalex.org/W2072453373","https://openalex.org/W2082028150","https://openalex.org/W2089307123","https://openalex.org/W2095416567","https://openalex.org/W2099613266","https://openalex.org/W2102201073","https://openalex.org/W2102209270","https://openalex.org/W2111421539","https://openalex.org/W2112214579","https://openalex.org/W2113115586","https://openalex.org/W2116269802","https://openalex.org/W2119253979","https://openalex.org/W2120314645","https://openalex.org/W2120353978","https://openalex.org/W2120802493","https://openalex.org/W2126302041","https://openalex.org/W2131014123","https://openalex.org/W2134869654","https://openalex.org/W2147968017","https://openalex.org/W2151329817","https://openalex.org/W2151857680","https://openalex.org/W2152820192","https://openalex.org/W2158245653","https://openalex.org/W2159087234","https://openalex.org/W2161076467","https://openalex.org/W2166764672","https://openalex.org/W2170333286","https://openalex.org/W2188898494","https://openalex.org/W2993459580","https://openalex.org/W3148441651","https://openalex.org/W4248133329","https://openalex.org/W4251383832","https://openalex.org/W6677500415","https://openalex.org/W6678076964","https://openalex.org/W6684514434"],"related_works":["https://openalex.org/W3150866391","https://openalex.org/W2112214579","https://openalex.org/W2310523918","https://openalex.org/W4200470254","https://openalex.org/W2120314645","https://openalex.org/W2083433971","https://openalex.org/W2043496087","https://openalex.org/W183886046","https://openalex.org/W2803645833","https://openalex.org/W2006584048"],"abstract_inverted_index":{"Negative":[0],"bias":[1,6],"temperature":[2,7,62],"instability":[3,8],"(NBTI),":[4],"positive":[5],"(PBTI),":[9],"and":[10,36,38,43,60,83,109,111,137],"hot":[11],"carrier":[12],"injection":[13],"(HCI)":[14],"are":[15,150],"leading":[16],"reliability":[17],"concerns":[18],"for":[19],"modern":[20],"microprocessors.":[21],"In":[22,120],"this":[23],"paper,":[24],"a":[25,67,71,95,133],"framework":[26],"is":[27],"proposed":[28],"to":[29,44,49,100,107,112,140,159],"analyze":[30],"the":[31,56,61,77,91,102,114,154,164],"impact":[32],"of":[33,63,73,94,117,135,147,156,163],"BTI":[34,108,136],"(NBTI":[35],"PBTI)":[37],"HCI":[39,110,138],"on":[40,90],"state-of-art":[41],"microprocessors":[42],"estimate":[45,113,141,162],"microprocessor":[46,68,96,103],"lifetimes":[47,146,155],"due":[48,106],"each":[50,64],"wearout":[51],"mechanism.":[52],"Our":[53],"methodology":[54,99],"finds":[55],"detailed":[57],"electrical":[58,78],"stress":[59,79],"device":[65],"within":[66],"system":[69,165],"running":[70],"variety":[72],"standard":[74],"benchmarks.":[75],"Combining":[76],"profiles,":[80,82],"thermal":[81],"device-level":[84],"models,":[85],"we":[86,122],"perform":[87],"timing":[88],"analysis":[89],"critical":[92],"paths":[93],"using":[97],"our":[98],"characterize":[101],"performance":[104],"degradation":[105,139],"lifetime":[115,143,166],"distribution":[116],"logic":[118,157],"blocks.":[119],"addition,":[121],"study":[123],"dc":[124],"noise":[125],"margins":[126],"in":[127],"conventional":[128],"6T":[129],"SRAM":[130],"cells":[131],"as":[132],"function":[134],"memory":[142,148],"distributions.":[144],"The":[145],"blocks":[149,158],"then":[151],"combined":[152],"with":[153],"provide":[160],"an":[161],"distribution.":[167]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":2},{"year":2021,"cited_by_count":2},{"year":2020,"cited_by_count":6},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":3},{"year":2017,"cited_by_count":4},{"year":2016,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}