{"id":"https://openalex.org/W1936959814","doi":"https://doi.org/10.1109/tvlsi.2014.2367234","title":"Single-Ended 9T SRAM Cell for Near-Threshold Voltage Operation With Enhanced Read Performance in 22-nm FinFET Technology","display_name":"Single-Ended 9T SRAM Cell for Near-Threshold Voltage Operation With Enhanced Read Performance in 22-nm FinFET Technology","publication_year":2014,"publication_date":"2014-11-20","ids":{"openalex":"https://openalex.org/W1936959814","doi":"https://doi.org/10.1109/tvlsi.2014.2367234","mag":"1936959814"},"language":"en","primary_location":{"id":"doi:10.1109/tvlsi.2014.2367234","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tvlsi.2014.2367234","pdf_url":null,"source":{"id":"https://openalex.org/S37538908","display_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","issn_l":"1063-8210","issn":["1063-8210","1557-9999"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5109509787","display_name":"Younghwi Yang","orcid":null},"institutions":[{"id":"https://openalex.org/I193775966","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96","country_code":"KR","type":"education","lineage":["https://openalex.org/I193775966"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Younghwi Yang","raw_affiliation_strings":["School of Electrical and Electronic Engineering, Yonsei University, Seoul, Korea","School of Electrical and Electronic Engineering, Yonsei University , Seoul , Korea"],"affiliations":[{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Yonsei University, Seoul, Korea","institution_ids":["https://openalex.org/I193775966"]},{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Yonsei University , Seoul , Korea","institution_ids":["https://openalex.org/I193775966"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101793550","display_name":"Juhyun Park","orcid":"https://orcid.org/0000-0003-4631-442X"},"institutions":[{"id":"https://openalex.org/I193775966","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96","country_code":"KR","type":"education","lineage":["https://openalex.org/I193775966"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Juhyun Park","raw_affiliation_strings":["School of Electrical and Electronic Engineering, Yonsei University, Seoul, Korea","School of Electrical and Electronic Engineering, Yonsei University , Seoul , Korea"],"affiliations":[{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Yonsei University, Seoul, Korea","institution_ids":["https://openalex.org/I193775966"]},{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Yonsei University , Seoul , Korea","institution_ids":["https://openalex.org/I193775966"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110878125","display_name":"Seung Chul Song","orcid":null},"institutions":[{"id":"https://openalex.org/I4210087596","display_name":"Qualcomm (United States)","ror":"https://ror.org/002zrf773","country_code":"US","type":"company","lineage":["https://openalex.org/I4210087596"]},{"id":"https://openalex.org/I4210111675","display_name":"Market Matters","ror":"https://ror.org/021yan307","country_code":"US","type":"nonprofit","lineage":["https://openalex.org/I4210111675"]},{"id":"https://openalex.org/I19268510","display_name":"Qualcomm (United Kingdom)","ror":"https://ror.org/04d3djg48","country_code":"GB","type":"company","lineage":["https://openalex.org/I19268510","https://openalex.org/I4210087596"]}],"countries":["GB","US"],"is_corresponding":false,"raw_author_name":"Seung Chul Song","raw_affiliation_strings":["Qualcomm Inc., San Diego, CA, USA","Qualcomm Inc.  San Diego CA USA"],"affiliations":[{"raw_affiliation_string":"Qualcomm Inc., San Diego, CA, USA","institution_ids":["https://openalex.org/I4210087596","https://openalex.org/I4210111675"]},{"raw_affiliation_string":"Qualcomm Inc.  San Diego CA USA","institution_ids":["https://openalex.org/I19268510","https://openalex.org/I4210111675"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100668859","display_name":"Joseph Wang","orcid":"https://orcid.org/0000-0002-4921-9674"},"institutions":[{"id":"https://openalex.org/I4210111675","display_name":"Market Matters","ror":"https://ror.org/021yan307","country_code":"US","type":"nonprofit","lineage":["https://openalex.org/I4210111675"]},{"id":"https://openalex.org/I19268510","display_name":"Qualcomm (United Kingdom)","ror":"https://ror.org/04d3djg48","country_code":"GB","type":"company","lineage":["https://openalex.org/I19268510","https://openalex.org/I4210087596"]},{"id":"https://openalex.org/I4210087596","display_name":"Qualcomm (United States)","ror":"https://ror.org/002zrf773","country_code":"US","type":"company","lineage":["https://openalex.org/I4210087596"]}],"countries":["GB","US"],"is_corresponding":false,"raw_author_name":"Joseph Wang","raw_affiliation_strings":["Qualcomm Inc., San Diego, CA, USA","Qualcomm Inc.  San Diego CA USA"],"affiliations":[{"raw_affiliation_string":"Qualcomm Inc., San Diego, CA, USA","institution_ids":["https://openalex.org/I4210087596","https://openalex.org/I4210111675"]},{"raw_affiliation_string":"Qualcomm Inc.  San Diego CA USA","institution_ids":["https://openalex.org/I19268510","https://openalex.org/I4210111675"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5060239328","display_name":"Geoffrey Yeap","orcid":"https://orcid.org/0000-0002-7767-7656"},"institutions":[{"id":"https://openalex.org/I4210111675","display_name":"Market Matters","ror":"https://ror.org/021yan307","country_code":"US","type":"nonprofit","lineage":["https://openalex.org/I4210111675"]},{"id":"https://openalex.org/I4210087596","display_name":"Qualcomm (United States)","ror":"https://ror.org/002zrf773","country_code":"US","type":"company","lineage":["https://openalex.org/I4210087596"]},{"id":"https://openalex.org/I19268510","display_name":"Qualcomm (United Kingdom)","ror":"https://ror.org/04d3djg48","country_code":"GB","type":"company","lineage":["https://openalex.org/I19268510","https://openalex.org/I4210087596"]}],"countries":["GB","US"],"is_corresponding":false,"raw_author_name":"Geoffrey Yeap","raw_affiliation_strings":["Qualcomm Inc., San Diego, CA, USA","Qualcomm Inc.  San Diego CA USA"],"affiliations":[{"raw_affiliation_string":"Qualcomm Inc., San Diego, CA, USA","institution_ids":["https://openalex.org/I4210087596","https://openalex.org/I4210111675"]},{"raw_affiliation_string":"Qualcomm Inc.  San Diego CA USA","institution_ids":["https://openalex.org/I19268510","https://openalex.org/I4210111675"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5037010076","display_name":"Seong\u2010Ook Jung","orcid":"https://orcid.org/0000-0003-0757-2581"},"institutions":[{"id":"https://openalex.org/I193775966","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96","country_code":"KR","type":"education","lineage":["https://openalex.org/I193775966"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Seong-Ook Jung","raw_affiliation_strings":["School of Electrical and Electronic Engineering, Yonsei University, Seoul, Korea","School of Electrical and Electronic Engineering, Yonsei University , Seoul , Korea"],"affiliations":[{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Yonsei University, Seoul, Korea","institution_ids":["https://openalex.org/I193775966"]},{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Yonsei University , Seoul , Korea","institution_ids":["https://openalex.org/I193775966"]}]}],"institutions":[],"countries_distinct_count":3,"institutions_distinct_count":6,"corresponding_author_ids":["https://openalex.org/A5109509787"],"corresponding_institution_ids":["https://openalex.org/I193775966"],"apc_list":null,"apc_paid":null,"fwci":1.277,"has_fulltext":false,"cited_by_count":47,"citation_normalized_percentile":{"value":0.81890938,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":96,"max":99},"biblio":{"volume":"23","issue":"11","first_page":"2748","last_page":"2752"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.874559223651886},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5954433679580688},{"id":"https://openalex.org/keywords/decoupling","display_name":"Decoupling (probability)","score":0.5922373533248901},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5837734937667847},{"id":"https://openalex.org/keywords/standby-power","display_name":"Standby power","score":0.54399573802948},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5338211059570312},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.5330528020858765},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.524451732635498},{"id":"https://openalex.org/keywords/node","display_name":"Node (physics)","score":0.4641059637069702},{"id":"https://openalex.org/keywords/energy-consumption","display_name":"Energy consumption","score":0.4620714783668518},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.44486740231513977},{"id":"https://openalex.org/keywords/memory-cell","display_name":"Memory cell","score":0.44147923588752747},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3472130298614502},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.2837790846824646},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2074476182460785}],"concepts":[{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.874559223651886},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5954433679580688},{"id":"https://openalex.org/C205606062","wikidata":"https://www.wikidata.org/wiki/Q5249645","display_name":"Decoupling (probability)","level":2,"score":0.5922373533248901},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5837734937667847},{"id":"https://openalex.org/C7140552","wikidata":"https://www.wikidata.org/wiki/Q1366402","display_name":"Standby power","level":3,"score":0.54399573802948},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5338211059570312},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.5330528020858765},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.524451732635498},{"id":"https://openalex.org/C62611344","wikidata":"https://www.wikidata.org/wiki/Q1062658","display_name":"Node (physics)","level":2,"score":0.4641059637069702},{"id":"https://openalex.org/C2780165032","wikidata":"https://www.wikidata.org/wiki/Q16869822","display_name":"Energy consumption","level":2,"score":0.4620714783668518},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.44486740231513977},{"id":"https://openalex.org/C2776638159","wikidata":"https://www.wikidata.org/wiki/Q18343761","display_name":"Memory cell","level":4,"score":0.44147923588752747},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3472130298614502},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.2837790846824646},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2074476182460785},{"id":"https://openalex.org/C66938386","wikidata":"https://www.wikidata.org/wiki/Q633538","display_name":"Structural engineering","level":1,"score":0.0},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0},{"id":"https://openalex.org/C133731056","wikidata":"https://www.wikidata.org/wiki/Q4917288","display_name":"Control engineering","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tvlsi.2014.2367234","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tvlsi.2014.2367234","pdf_url":null,"source":{"id":"https://openalex.org/S37538908","display_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","issn_l":"1063-8210","issn":["1063-8210","1557-9999"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.9100000262260437}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":14,"referenced_works":["https://openalex.org/W1556648447","https://openalex.org/W1565505009","https://openalex.org/W1753784006","https://openalex.org/W1984711740","https://openalex.org/W1998525920","https://openalex.org/W2000967300","https://openalex.org/W2020145388","https://openalex.org/W2093108103","https://openalex.org/W2094648661","https://openalex.org/W2095913060","https://openalex.org/W2099087448","https://openalex.org/W2119327444","https://openalex.org/W2144289559","https://openalex.org/W2162517322"],"related_works":["https://openalex.org/W2773448237","https://openalex.org/W2188598220","https://openalex.org/W1533452797","https://openalex.org/W2162271340","https://openalex.org/W3103005480","https://openalex.org/W2539500217","https://openalex.org/W4377020067","https://openalex.org/W1528792662","https://openalex.org/W2136362177","https://openalex.org/W1504951709"],"abstract_inverted_index":{"Although":[0],"near-threshold":[1],"(Vth)":[2],"operation":[3],"is":[4,97],"an":[5],"attractive":[6],"method":[7,96],"for":[8,23],"energy":[9],"and":[10,63,73],"performance-constrained":[11],"applications,":[12],"it":[13],"suffers":[14],"from":[15,59],"problems":[16],"in":[17,39,84],"terms":[18],"of":[19,47,116],"circuit":[20],"stability,":[21],"particularly,":[22],"static":[24],"random":[25],"access":[26],"memory":[27],"(SRAM)":[28],"cells.":[29],"This":[30],"brief":[31],"proposes":[32],"a":[33,40,68,93,112],"near-Vth":[34],"9T":[35],"SRAM":[36,108],"cell":[37,50,109],"implemented":[38],"22-nm":[41],"FinFET":[42],"technology.":[43],"The":[44,106],"read":[45,52,61,65,70,86],"buffer":[46],"the":[48,56,60,80,85,102],"proposed":[49,107],"ensures":[51],"stability":[53],"by":[54,78],"decoupling":[55],"stored":[57],"node":[58],"bit-line":[62],"improves":[64],"performance":[66],"using":[67],"one-transistor":[69],"path.":[71],"Energy":[72],"standby":[74],"power":[75],"are":[76],"reduced":[77],"eliminating":[79],"sub-Vth":[81],"leakage":[82],"current":[83],"buffer.":[87],"For":[88],"accurate":[89],"sensing":[90],"yield":[91],"estimation,":[92],"new":[94],"yield-estimation":[95],"also":[98],"proposed,":[99],"which":[100],"considers":[101],"dynamic":[103],"trip":[104],"voltage.":[105],"can":[110],"achieve":[111],"minimum":[113],"operating":[114],"voltage":[115],"0.3":[117],"V.":[118]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":5},{"year":2024,"cited_by_count":5},{"year":2023,"cited_by_count":4},{"year":2022,"cited_by_count":9},{"year":2021,"cited_by_count":5},{"year":2019,"cited_by_count":8},{"year":2018,"cited_by_count":4},{"year":2017,"cited_by_count":3},{"year":2016,"cited_by_count":3}],"updated_date":"2026-04-09T08:11:56.329763","created_date":"2025-10-10T00:00:00"}