{"id":"https://openalex.org/W2011780029","doi":"https://doi.org/10.1109/tvlsi.2014.2354836","title":"Reliable Antifuse One-Time-Programmable Scheme With Charge Pump for Postpackage Repair of DRAM","display_name":"Reliable Antifuse One-Time-Programmable Scheme With Charge Pump for Postpackage Repair of DRAM","publication_year":2014,"publication_date":"2014-09-18","ids":{"openalex":"https://openalex.org/W2011780029","doi":"https://doi.org/10.1109/tvlsi.2014.2354836","mag":"2011780029"},"language":"en","primary_location":{"id":"doi:10.1109/tvlsi.2014.2354836","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tvlsi.2014.2354836","pdf_url":null,"source":{"id":"https://openalex.org/S37538908","display_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","issn_l":"1063-8210","issn":["1063-8210","1557-9999"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100426007","display_name":"Xian Li","orcid":"https://orcid.org/0000-0002-5387-4647"},"institutions":[{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]},{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"funder","lineage":["https://openalex.org/I19820366"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Xian Li","raw_affiliation_strings":["Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China"],"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China","institution_ids":["https://openalex.org/I4210119392","https://openalex.org/I19820366"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101976150","display_name":"Huicai Zhong","orcid":"https://orcid.org/0000-0002-3887-119X"},"institutions":[{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]},{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"funder","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I137902535","display_name":"North Carolina State University","ror":"https://ror.org/04tj63d06","country_code":"US","type":"education","lineage":["https://openalex.org/I137902535"]}],"countries":["CN","US"],"is_corresponding":false,"raw_author_name":"Huicai Zhong","raw_affiliation_strings":["Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC, USA","Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC, USA","institution_ids":["https://openalex.org/I137902535"]},{"raw_affiliation_string":"Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China","institution_ids":["https://openalex.org/I4210119392","https://openalex.org/I19820366"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5075357490","display_name":"Zhenhui Tang","orcid":null},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zhenhui Tang","raw_affiliation_strings":["Changsha Alphavor Electronics Company, Ltd., Changsha, China","College of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology, Chengdu, China"],"affiliations":[{"raw_affiliation_string":"Changsha Alphavor Electronics Company, Ltd., Changsha, China","institution_ids":[]},{"raw_affiliation_string":"College of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology, Chengdu, China","institution_ids":["https://openalex.org/I150229711"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5037173390","display_name":"Jia Cheng","orcid":"https://orcid.org/0000-0002-2557-0072"},"institutions":[{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]},{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"funder","lineage":["https://openalex.org/I19820366"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Cheng Jia","raw_affiliation_strings":["Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China"],"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China","institution_ids":["https://openalex.org/I4210119392","https://openalex.org/I19820366"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5100426007"],"corresponding_institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210119392"],"apc_list":null,"apc_paid":null,"fwci":0.628,"has_fulltext":false,"cited_by_count":7,"citation_normalized_percentile":{"value":0.72599913,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":"23","issue":"9","first_page":"1956","last_page":"1960"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11230","display_name":"Innovative Energy Harvesting Technologies","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/2210","display_name":"Mechanical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10663","display_name":"Advanced Battery Technologies Research","score":0.9987999796867371,"subfield":{"id":"https://openalex.org/subfields/2203","display_name":"Automotive Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/dram","display_name":"Dram","score":0.8340948820114136},{"id":"https://openalex.org/keywords/nmos-logic","display_name":"NMOS logic","score":0.6703906059265137},{"id":"https://openalex.org/keywords/multiplexer","display_name":"Multiplexer","score":0.5693556070327759},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5616762042045593},{"id":"https://openalex.org/keywords/dynamic-random-access-memory","display_name":"Dynamic random-access memory","score":0.4896009564399719},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.4627532958984375},{"id":"https://openalex.org/keywords/charge-pump","display_name":"Charge pump","score":0.4370105564594269},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.436831533908844},{"id":"https://openalex.org/keywords/comparator","display_name":"Comparator","score":0.43448755145072937},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.42059215903282166},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.41879603266716003},{"id":"https://openalex.org/keywords/capacitor","display_name":"Capacitor","score":0.4174915850162506},{"id":"https://openalex.org/keywords/access-time","display_name":"Access time","score":0.41006723046302795},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.3514149785041809},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.32873228192329407},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.30108481645584106},{"id":"https://openalex.org/keywords/multiplexing","display_name":"Multiplexing","score":0.20329204201698303},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.12329167127609253},{"id":"https://openalex.org/keywords/semiconductor-memory","display_name":"Semiconductor memory","score":0.10323911905288696}],"concepts":[{"id":"https://openalex.org/C7366592","wikidata":"https://www.wikidata.org/wiki/Q1255620","display_name":"Dram","level":2,"score":0.8340948820114136},{"id":"https://openalex.org/C197162436","wikidata":"https://www.wikidata.org/wiki/Q83908","display_name":"NMOS logic","level":4,"score":0.6703906059265137},{"id":"https://openalex.org/C70970002","wikidata":"https://www.wikidata.org/wiki/Q189434","display_name":"Multiplexer","level":3,"score":0.5693556070327759},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5616762042045593},{"id":"https://openalex.org/C118702147","wikidata":"https://www.wikidata.org/wiki/Q189396","display_name":"Dynamic random-access memory","level":3,"score":0.4896009564399719},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.4627532958984375},{"id":"https://openalex.org/C114825011","wikidata":"https://www.wikidata.org/wiki/Q440704","display_name":"Charge pump","level":4,"score":0.4370105564594269},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.436831533908844},{"id":"https://openalex.org/C155745195","wikidata":"https://www.wikidata.org/wiki/Q1164179","display_name":"Comparator","level":3,"score":0.43448755145072937},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.42059215903282166},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.41879603266716003},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.4174915850162506},{"id":"https://openalex.org/C194080101","wikidata":"https://www.wikidata.org/wiki/Q46306","display_name":"Access time","level":2,"score":0.41006723046302795},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3514149785041809},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.32873228192329407},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.30108481645584106},{"id":"https://openalex.org/C19275194","wikidata":"https://www.wikidata.org/wiki/Q222903","display_name":"Multiplexing","level":2,"score":0.20329204201698303},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.12329167127609253},{"id":"https://openalex.org/C98986596","wikidata":"https://www.wikidata.org/wiki/Q1143031","display_name":"Semiconductor memory","level":2,"score":0.10323911905288696}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tvlsi.2014.2354836","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tvlsi.2014.2354836","pdf_url":null,"source":{"id":"https://openalex.org/S37538908","display_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","issn_l":"1063-8210","issn":["1063-8210","1557-9999"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.550000011920929,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":13,"referenced_works":["https://openalex.org/W1975131093","https://openalex.org/W1988388144","https://openalex.org/W2024251096","https://openalex.org/W2030204473","https://openalex.org/W2058194323","https://openalex.org/W2072774679","https://openalex.org/W2099158291","https://openalex.org/W2111323554","https://openalex.org/W2114592904","https://openalex.org/W2134536795","https://openalex.org/W2135465509","https://openalex.org/W2160059834","https://openalex.org/W2788058898"],"related_works":["https://openalex.org/W3123985664","https://openalex.org/W1965786156","https://openalex.org/W2384021593","https://openalex.org/W2133827437","https://openalex.org/W2179186945","https://openalex.org/W1544235784","https://openalex.org/W2146787620","https://openalex.org/W3192888672","https://openalex.org/W2103694477","https://openalex.org/W2810550170"],"abstract_inverted_index":{"A":[0],"reliable":[1],"antifuse":[2],"(AF)":[3],"one-time-programmable":[4],"(OTP)":[5],"cell":[6,26],"and":[7,108,137],"its":[8],"sensing":[9],"plus":[10],"programming":[11],"circuits":[12],"for":[13],"postpackage":[14],"repair":[15],"of":[16,37,41,49,101,118,134],"dynamic":[17],"random":[18],"access":[19,112,144],"memory":[20],"(DRAM)":[21],"are":[22],"presented.":[23],"The":[24,46,120],"OTP":[25,50],"was":[27],"fabricated":[28,52],"without":[29,83],"any":[30,84],"process":[31,56],"modifications":[32],"by":[33,53],"utilizing":[34],"destructive":[35],"breakdown":[36],"thin":[38],"gate":[39],"oxide":[40],"nMOS":[42],"capacitor":[43],"as":[44,127],"storage.":[45],"measurement":[47],"results":[48],"array":[51],"0.13-\u03bcm":[54],"CMOS":[55],"show":[57],"a":[58,92],"tight":[59],"read":[60],"current":[61],"distribution":[62],"after":[63],"programming.":[64],"For":[65],"pin":[66],"compatibility":[67],"with":[68,147],"standard":[69],"DRAM":[70],"specifications,":[71],"an":[72],"internal":[73],"charge":[74],"pump":[75],"is":[76,95],"designed":[77],"to":[78,97,111],"provide":[79],"high":[80],"program":[81],"voltage":[82],"additional":[85],"pin.":[86],"Based":[87],"on":[88],"the":[89,99,105,132,139],"AF":[90],"cells,":[91],"programmable":[93],"decoder":[94],"proposed":[96,140],"store":[98],"address":[100,135],"failed":[102],"bit,":[103],"decode":[104],"input":[106],"address,":[107],"decide":[109],"whether":[110],"normal":[113],"bit":[114],"or":[115],"redundant":[116,128],"one":[117],"DRAM.":[119],"whole":[121],"bit-repair":[122],"scheme":[123,141],"uses":[124,133],"static":[125],"latches":[126],"cells.":[129],"By":[130],"avoiding":[131],"comparator":[136],"multiplexer,":[138],"shows":[142],"less":[143],"penalty":[145],"compared":[146],"prior":[148],"scheme.":[149]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2017,"cited_by_count":2},{"year":2016,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}