{"id":"https://openalex.org/W1987849856","doi":"https://doi.org/10.1109/tvlsi.2013.2268984","title":"Novel Circuit-Level Model for Gate Oxide Short and its Testing Method in SRAMs","display_name":"Novel Circuit-Level Model for Gate Oxide Short and its Testing Method in SRAMs","publication_year":2013,"publication_date":"2013-07-03","ids":{"openalex":"https://openalex.org/W1987849856","doi":"https://doi.org/10.1109/tvlsi.2013.2268984","mag":"1987849856"},"language":"en","primary_location":{"id":"doi:10.1109/tvlsi.2013.2268984","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tvlsi.2013.2268984","pdf_url":null,"source":{"id":"https://openalex.org/S37538908","display_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","issn_l":"1063-8210","issn":["1063-8210","1557-9999"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5050123308","display_name":"Chen-Wei Lin","orcid":null},"institutions":[{"id":"https://openalex.org/I148366613","display_name":"National Yang Ming Chiao Tung University","ror":"https://ror.org/00se2k293","country_code":"TW","type":"education","lineage":["https://openalex.org/I148366613"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Chen-Wei Lin","raw_affiliation_strings":["Department of Electronics Engineering, Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan","Department of Electronics Engineering, Institute of Electronics, National Chiao Tung University , Hsinchu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronics Engineering, Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I148366613"]},{"raw_affiliation_string":"Department of Electronics Engineering, Institute of Electronics, National Chiao Tung University , Hsinchu, Taiwan","institution_ids":["https://openalex.org/I148366613"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5045156360","display_name":"Mango C.-T. Chao","orcid":"https://orcid.org/0000-0002-7299-9015"},"institutions":[{"id":"https://openalex.org/I148366613","display_name":"National Yang Ming Chiao Tung University","ror":"https://ror.org/00se2k293","country_code":"TW","type":"education","lineage":["https://openalex.org/I148366613"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Mango C.-T. Chao","raw_affiliation_strings":["Department of Electronics Engineering, Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan","Department of Electronics Engineering, Institute of Electronics, National Chiao Tung University , Hsinchu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronics Engineering, Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I148366613"]},{"raw_affiliation_string":"Department of Electronics Engineering, Institute of Electronics, National Chiao Tung University , Hsinchu, Taiwan","institution_ids":["https://openalex.org/I148366613"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5008356242","display_name":"Chih-Chieh Hsu","orcid":"https://orcid.org/0000-0002-1007-5079"},"institutions":[{"id":"https://openalex.org/I75357094","display_name":"National Yunlin University of Science and Technology","ror":"https://ror.org/04qkq2m54","country_code":"TW","type":"education","lineage":["https://openalex.org/I75357094"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Chih-Chieh Hsu","raw_affiliation_strings":["Graduate School of Engineering Science and Technology, National Yunlin University of Science and Technology, Yunlin, Taiwan","[Graduate School of Engineering Science and Technology, National Yunlin University of Science and Technology, Yunlin, Taiwan]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Graduate School of Engineering Science and Technology, National Yunlin University of Science and Technology, Yunlin, Taiwan","institution_ids":["https://openalex.org/I75357094"]},{"raw_affiliation_string":"[Graduate School of Engineering Science and Technology, National Yunlin University of Science and Technology, Yunlin, Taiwan]","institution_ids":["https://openalex.org/I75357094"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.2349,"has_fulltext":false,"cited_by_count":7,"citation_normalized_percentile":{"value":0.58159788,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":95},"biblio":{"volume":"22","issue":"6","first_page":"1294","last_page":"1307"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.7962045669555664},{"id":"https://openalex.org/keywords/iddq-testing","display_name":"Iddq testing","score":0.6083754897117615},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.571654736995697},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5647950172424316},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.4922744333744049},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.4712888300418854},{"id":"https://openalex.org/keywords/semiconductor-device-modeling","display_name":"Semiconductor device modeling","score":0.4284389019012451},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4188224971294403},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.37973952293395996},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.3404950499534607},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.2953904867172241},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.26489579677581787},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.22694402933120728},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.09435242414474487}],"concepts":[{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.7962045669555664},{"id":"https://openalex.org/C206678392","wikidata":"https://www.wikidata.org/wiki/Q5987815","display_name":"Iddq testing","level":3,"score":0.6083754897117615},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.571654736995697},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5647950172424316},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.4922744333744049},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.4712888300418854},{"id":"https://openalex.org/C4775677","wikidata":"https://www.wikidata.org/wiki/Q7449393","display_name":"Semiconductor device modeling","level":3,"score":0.4284389019012451},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4188224971294403},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.37973952293395996},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.3404950499534607},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.2953904867172241},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.26489579677581787},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.22694402933120728},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.09435242414474487},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tvlsi.2013.2268984","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tvlsi.2013.2268984","pdf_url":null,"source":{"id":"https://openalex.org/S37538908","display_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","issn_l":"1063-8210","issn":["1063-8210","1557-9999"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Industry, innovation and infrastructure","score":0.47999998927116394,"id":"https://metadata.un.org/sdg/9"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":56,"referenced_works":["https://openalex.org/W48128203","https://openalex.org/W1496291963","https://openalex.org/W1587450143","https://openalex.org/W1641755856","https://openalex.org/W1749457750","https://openalex.org/W1839387509","https://openalex.org/W1897734890","https://openalex.org/W1904316732","https://openalex.org/W1953267510","https://openalex.org/W1974289003","https://openalex.org/W1982756257","https://openalex.org/W1989858431","https://openalex.org/W1995329733","https://openalex.org/W2021085718","https://openalex.org/W2051630841","https://openalex.org/W2057111379","https://openalex.org/W2098320407","https://openalex.org/W2100704220","https://openalex.org/W2100827158","https://openalex.org/W2112012044","https://openalex.org/W2115997634","https://openalex.org/W2118454893","https://openalex.org/W2126125576","https://openalex.org/W2127068923","https://openalex.org/W2127188708","https://openalex.org/W2130260271","https://openalex.org/W2131862714","https://openalex.org/W2134057423","https://openalex.org/W2134958999","https://openalex.org/W2136393784","https://openalex.org/W2136657530","https://openalex.org/W2142161670","https://openalex.org/W2143442327","https://openalex.org/W2146604105","https://openalex.org/W2149429476","https://openalex.org/W2150201236","https://openalex.org/W2151824694","https://openalex.org/W2158365919","https://openalex.org/W2160032993","https://openalex.org/W2162154752","https://openalex.org/W2163598532","https://openalex.org/W2168568538","https://openalex.org/W2172121137","https://openalex.org/W2273202284","https://openalex.org/W2478649504","https://openalex.org/W2540189553","https://openalex.org/W2542514900","https://openalex.org/W2542656333","https://openalex.org/W3115678505","https://openalex.org/W3147064120","https://openalex.org/W4229612137","https://openalex.org/W6680178178","https://openalex.org/W6681772123","https://openalex.org/W6682331928","https://openalex.org/W6728568384","https://openalex.org/W6787870032"],"related_works":["https://openalex.org/W2548594263","https://openalex.org/W4386066422","https://openalex.org/W2540368402","https://openalex.org/W2966234605","https://openalex.org/W2055409173","https://openalex.org/W2539702774","https://openalex.org/W1591186069","https://openalex.org/W2172415194","https://openalex.org/W2533036699","https://openalex.org/W2105618561"],"abstract_inverted_index":{"Gate":[0],"oxide":[1,15],"short":[2],"(GOS)":[3],"has":[4,126],"become":[5],"a":[6,18,26,48,52,73,80,99,114,142],"common":[7],"defect":[8],"for":[9,147],"advanced":[10],"technologies":[11],"as":[12],"the":[13,39,61,66,90,105,110,118,122,153,159],"gate":[14],"thickness":[16],"of":[17,25,51,65,83,89,113,121],"MOSFET":[19,28,54],"is":[20,95],"greatly":[21],"reduced.":[22],"The":[23],"behavior":[24],"GOS-impacted":[27,53,101,123],"is,":[29],"however,":[30],"complicated":[31],"and":[32,59,63,93,163],"difficult":[33],"to":[34,97,140],"be":[35],"accurately":[36],"modeled":[37],"at":[38],"circuit":[40],"level.":[41],"In":[42,103],"this":[43],"paper,":[44],"we":[45,71,134],"first":[46],"build":[47],"golden":[49],"model":[50,77,107,139],"by":[55,116],"using":[56],"technology":[57],"CAD,":[58],"identify":[60],"limitation":[62],"inaccuracy":[64],"previous":[67,91,131],"GOS":[68,76,115,138,144,154],"models.":[69],"Next,":[70],"propose":[72],"novel":[74,143],"circuit-level":[75],"which":[78,125,149],"provides":[79],"higher":[81],"accuracy":[82],"its":[84],"dc":[85],"characteristics":[86,112],"than":[87],"any":[88],"models":[92],"being":[94],"able":[96],"represent":[98],"minimum-size":[100],"MOSFET.":[102],"addition,":[104],"proposed":[106,137],"can":[108,150],"fit":[109],"transient":[111],"considering":[117],"capacitance":[119],"change":[120],"MOSFET,":[124],"not":[127],"been":[128],"discussed":[129],"in":[130],"work.":[132],"Last,":[133],"utilize":[135],"our":[136],"develop":[141],"test":[145,162],"method":[146],"SRAMs,":[148],"effectively":[151],"detect":[152],"defects":[155],"usually":[156],"escaped":[157],"from":[158],"conventional":[160],"IDDQ":[161],"March":[164],"test.":[165]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":1},{"year":2017,"cited_by_count":1},{"year":2015,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}