{"id":"https://openalex.org/W1967547265","doi":"https://doi.org/10.1109/tvlsi.2013.2239671","title":"Failure Mitigation Techniques for 1T-1MTJ Spin-Transfer Torque MRAM Bit-cells","display_name":"Failure Mitigation Techniques for 1T-1MTJ Spin-Transfer Torque MRAM Bit-cells","publication_year":2014,"publication_date":"2014-01-24","ids":{"openalex":"https://openalex.org/W1967547265","doi":"https://doi.org/10.1109/tvlsi.2013.2239671","mag":"1967547265"},"language":"en","primary_location":{"id":"doi:10.1109/tvlsi.2013.2239671","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tvlsi.2013.2239671","pdf_url":null,"source":{"id":"https://openalex.org/S37538908","display_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","issn_l":"1063-8210","issn":["1063-8210","1557-9999"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5085588788","display_name":"Xuanyao Fong","orcid":"https://orcid.org/0000-0001-5939-7389"},"institutions":[{"id":"https://openalex.org/I219193219","display_name":"Purdue University West Lafayette","ror":"https://ror.org/02dqehb95","country_code":"US","type":"education","lineage":["https://openalex.org/I219193219"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Xuanyao Fong","raw_affiliation_strings":["Department of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA","Dept. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA","institution_ids":["https://openalex.org/I219193219"]},{"raw_affiliation_string":"Dept. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA","institution_ids":["https://openalex.org/I219193219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101688825","display_name":"Yusung Kim","orcid":"https://orcid.org/0000-0002-4051-3789"},"institutions":[{"id":"https://openalex.org/I219193219","display_name":"Purdue University West Lafayette","ror":"https://ror.org/02dqehb95","country_code":"US","type":"education","lineage":["https://openalex.org/I219193219"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Yusung Kim","raw_affiliation_strings":["Department of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA","Dept. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA","institution_ids":["https://openalex.org/I219193219"]},{"raw_affiliation_string":"Dept. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA","institution_ids":["https://openalex.org/I219193219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5069157327","display_name":"Sri Harsha Choday","orcid":null},"institutions":[{"id":"https://openalex.org/I219193219","display_name":"Purdue University West Lafayette","ror":"https://ror.org/02dqehb95","country_code":"US","type":"education","lineage":["https://openalex.org/I219193219"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Sri Harsha Choday","raw_affiliation_strings":["Department of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA","Dept. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA","institution_ids":["https://openalex.org/I219193219"]},{"raw_affiliation_string":"Dept. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA","institution_ids":["https://openalex.org/I219193219"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5031161187","display_name":"Kaushik Roy","orcid":"https://orcid.org/0000-0002-0735-9695"},"institutions":[{"id":"https://openalex.org/I219193219","display_name":"Purdue University West Lafayette","ror":"https://ror.org/02dqehb95","country_code":"US","type":"education","lineage":["https://openalex.org/I219193219"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Kaushik Roy","raw_affiliation_strings":["Department of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA","Dept. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA","institution_ids":["https://openalex.org/I219193219"]},{"raw_affiliation_string":"Dept. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA","institution_ids":["https://openalex.org/I219193219"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I219193219"],"apc_list":null,"apc_paid":null,"fwci":8.0649,"has_fulltext":false,"cited_by_count":93,"citation_normalized_percentile":{"value":0.98045004,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":90,"max":100},"biblio":{"volume":"22","issue":"2","first_page":"384","last_page":"395"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9972000122070312,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9926000237464905,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/magnetoresistive-random-access-memory","display_name":"Magnetoresistive random-access memory","score":0.7805772423744202},{"id":"https://openalex.org/keywords/spin-transfer-torque","display_name":"Spin-transfer torque","score":0.5883503556251526},{"id":"https://openalex.org/keywords/boosting","display_name":"Boosting (machine learning)","score":0.5737199187278748},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.5221160650253296},{"id":"https://openalex.org/keywords/tunnel-magnetoresistance","display_name":"Tunnel magnetoresistance","score":0.49096110463142395},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.482669860124588},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.44827720522880554},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.4362756013870239},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.43245238065719604},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.40675657987594604},{"id":"https://openalex.org/keywords/magnetic-field","display_name":"Magnetic field","score":0.27059030532836914},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.26367104053497314},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.24102312326431274},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.17243826389312744},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.1424148976802826},{"id":"https://openalex.org/keywords/random-access-memory","display_name":"Random access memory","score":0.1339246928691864},{"id":"https://openalex.org/keywords/artificial-intelligence","display_name":"Artificial intelligence","score":0.11754444241523743},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.09846821427345276},{"id":"https://openalex.org/keywords/magnetization","display_name":"Magnetization","score":0.06324413418769836}],"concepts":[{"id":"https://openalex.org/C46891859","wikidata":"https://www.wikidata.org/wiki/Q1061546","display_name":"Magnetoresistive random-access memory","level":3,"score":0.7805772423744202},{"id":"https://openalex.org/C609986","wikidata":"https://www.wikidata.org/wiki/Q844840","display_name":"Spin-transfer torque","level":4,"score":0.5883503556251526},{"id":"https://openalex.org/C46686674","wikidata":"https://www.wikidata.org/wiki/Q466303","display_name":"Boosting (machine learning)","level":2,"score":0.5737199187278748},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5221160650253296},{"id":"https://openalex.org/C56202322","wikidata":"https://www.wikidata.org/wiki/Q1884383","display_name":"Tunnel magnetoresistance","level":3,"score":0.49096110463142395},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.482669860124588},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.44827720522880554},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4362756013870239},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.43245238065719604},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.40675657987594604},{"id":"https://openalex.org/C115260700","wikidata":"https://www.wikidata.org/wiki/Q11408","display_name":"Magnetic field","level":2,"score":0.27059030532836914},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.26367104053497314},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.24102312326431274},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.17243826389312744},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.1424148976802826},{"id":"https://openalex.org/C2994168587","wikidata":"https://www.wikidata.org/wiki/Q5295","display_name":"Random access memory","level":2,"score":0.1339246928691864},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.11754444241523743},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.09846821427345276},{"id":"https://openalex.org/C32546565","wikidata":"https://www.wikidata.org/wiki/Q856711","display_name":"Magnetization","level":3,"score":0.06324413418769836},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/tvlsi.2013.2239671","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tvlsi.2013.2239671","pdf_url":null,"source":{"id":"https://openalex.org/S37538908","display_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","issn_l":"1063-8210","issn":["1063-8210","1557-9999"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","raw_type":"journal-article"},{"id":"pmh:oai:scholarbank.nus.edu.sg:10635/156174","is_oa":false,"landing_page_url":"https://scholarbank.nus.edu.sg/handle/10635/156174","pdf_url":null,"source":{"id":"https://openalex.org/S7407052290","display_name":"National University of Singapore","issn_l":null,"issn":[],"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Elements","raw_type":"Article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.75,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":35,"referenced_works":["https://openalex.org/W1534052597","https://openalex.org/W1964504828","https://openalex.org/W1975904824","https://openalex.org/W1983816564","https://openalex.org/W1987333237","https://openalex.org/W1991813033","https://openalex.org/W1998340208","https://openalex.org/W2001108445","https://openalex.org/W2009481135","https://openalex.org/W2014178805","https://openalex.org/W2014987330","https://openalex.org/W2035925590","https://openalex.org/W2038941060","https://openalex.org/W2054164060","https://openalex.org/W2055755468","https://openalex.org/W2057343081","https://openalex.org/W2060931929","https://openalex.org/W2063749648","https://openalex.org/W2084515045","https://openalex.org/W2086077121","https://openalex.org/W2096199318","https://openalex.org/W2106738517","https://openalex.org/W2107971449","https://openalex.org/W2120699192","https://openalex.org/W2138459720","https://openalex.org/W2147720557","https://openalex.org/W2156639795","https://openalex.org/W2156728623","https://openalex.org/W2165782055","https://openalex.org/W2188761345","https://openalex.org/W3100496121","https://openalex.org/W4236272200","https://openalex.org/W4285719527","https://openalex.org/W6677912116","https://openalex.org/W6687026183"],"related_works":["https://openalex.org/W4226197542","https://openalex.org/W1977755618","https://openalex.org/W2034593071","https://openalex.org/W3136027979","https://openalex.org/W1970094457","https://openalex.org/W4231059390","https://openalex.org/W2490184523","https://openalex.org/W2543376619","https://openalex.org/W2289300168","https://openalex.org/W2143391424"],"abstract_inverted_index":{"The":[0],"emergence":[1],"of":[2,35,43,165],"spin-transfer":[3],"torque":[4],"magnetic":[5,101,114,168],"RAM":[6],"(STT-MRAM)":[7],"as":[8],"a":[9,138],"leading":[10],"candidate":[11],"for":[12,135],"future":[13],"high-performance":[14],"nonvolatile":[15],"memory":[16],"has":[17,137],"led":[18],"to":[19,53,57,149,179],"increased":[20,63],"research":[21],"interest.":[22],"Current":[23],"STT-MRAM":[24,45,81],"technology":[25,117],"faces":[26],"several":[27],"major":[28,37],"obstacles":[29],"in":[30,40,62],"attaining":[31],"its":[32],"potential.":[33],"One":[34],"the":[36,41,50,125],"issues":[38],"is":[39,160],"design":[42],"1T-1MTJ":[44,80],"bit-cells":[46,51,82,150,180],"under":[47],"process":[48],"variations:":[49],"need":[52],"be":[54,124],"significantly":[55],"upsized":[56],"improve":[58],"bit-cell":[59,64,139,157],"failure,":[60],"resulting":[61],"area":[65,140],"and":[66,97,112],"power":[67,173],"dissipation.":[68],"In":[69],"this":[70],"paper,":[71],"we":[72],"analyze":[73],"four":[74],"circuit-level":[75],"solutions":[76],"that":[77,119],"enable":[78],"smaller":[79],"with":[83,132],"improved":[84],"yield,":[85],"namely,":[86],"bit-line":[87],"voltage":[88,91,121],"boosting,":[89,92],"word-line":[90,120,133],"access":[93,110],"transistor":[94,111],"body":[95],"biasing,":[96],"an":[98],"applied":[99,166],"external":[100,167],"field.":[102],"Results":[103],"from":[104],"simulation":[105],"using":[106],"45-nm":[107],"bulk":[108],"CMOS":[109],"40-nm":[113],"tunneling":[115],"junction":[116],"show":[118],"boosting":[122,134],"can":[123],"best":[126],"failure":[127,153,158,183],"mitigation":[128,154,184],"technique.":[129,155],"Bit-cells":[130],"designed":[131,181],"write":[136,171],"reduced":[141],"by":[142,175],">":[143],"75%":[144],"at":[145],"iso-failure":[146],"probability,":[147],"compared":[148,178],"without":[151,182],"any":[152],"When":[156],"probability":[159],"optimized":[161],"instead,":[162],"5":[163],"Oe":[164],"field":[169],"assisted":[170],"reduces":[172],"consumption":[174],"15%":[176],",":[177],"techniques.":[185]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":4},{"year":2022,"cited_by_count":7},{"year":2021,"cited_by_count":14},{"year":2020,"cited_by_count":8},{"year":2019,"cited_by_count":5},{"year":2018,"cited_by_count":14},{"year":2017,"cited_by_count":6},{"year":2016,"cited_by_count":12},{"year":2015,"cited_by_count":16},{"year":2014,"cited_by_count":3},{"year":2013,"cited_by_count":3}],"updated_date":"2026-06-26T08:34:08.712188","created_date":"2025-10-10T00:00:00"}