{"id":"https://openalex.org/W2108957996","doi":"https://doi.org/10.1109/tvlsi.2011.2109973","title":"Enhancing NBTI Recovery in SRAM Arrays Through Recovery Boosting","display_name":"Enhancing NBTI Recovery in SRAM Arrays Through Recovery Boosting","publication_year":2011,"publication_date":"2011-02-24","ids":{"openalex":"https://openalex.org/W2108957996","doi":"https://doi.org/10.1109/tvlsi.2011.2109973","mag":"2108957996"},"language":"en","primary_location":{"id":"doi:10.1109/tvlsi.2011.2109973","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tvlsi.2011.2109973","pdf_url":null,"source":{"id":"https://openalex.org/S37538908","display_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","issn_l":"1063-8210","issn":["1063-8210","1557-9999"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5030190745","display_name":"Taniya Siddiqua","orcid":null},"institutions":[{"id":"https://openalex.org/I51556381","display_name":"University of Virginia","ror":"https://ror.org/0153tk833","country_code":"US","type":"education","lineage":["https://openalex.org/I51556381"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Taniya Siddiqua","raw_affiliation_strings":["Department of Computer Science, University of Virginia, Charlottesville, VA, USA","[Dept. of Comput. Sci., Univ. of Virginia, Charlottesville, VA, USA]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Computer Science, University of Virginia, Charlottesville, VA, USA","institution_ids":["https://openalex.org/I51556381"]},{"raw_affiliation_string":"[Dept. of Comput. Sci., Univ. of Virginia, Charlottesville, VA, USA]","institution_ids":["https://openalex.org/I51556381"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5078748445","display_name":"Sudhanva Gurumurthi","orcid":"https://orcid.org/0000-0002-1740-7304"},"institutions":[{"id":"https://openalex.org/I51556381","display_name":"University of Virginia","ror":"https://ror.org/0153tk833","country_code":"US","type":"education","lineage":["https://openalex.org/I51556381"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Sudhanva Gurumurthi","raw_affiliation_strings":["Department of Computer Science, University of Virginia, Charlottesville, VA, USA","[Dept. of Comput. Sci., Univ. of Virginia, Charlottesville, VA, USA]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Computer Science, University of Virginia, Charlottesville, VA, USA","institution_ids":["https://openalex.org/I51556381"]},{"raw_affiliation_string":"[Dept. of Comput. Sci., Univ. of Virginia, Charlottesville, VA, USA]","institution_ids":["https://openalex.org/I51556381"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I51556381"],"apc_list":null,"apc_paid":null,"fwci":2.929,"has_fulltext":false,"cited_by_count":35,"citation_normalized_percentile":{"value":0.91543389,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":"20","issue":"4","first_page":"616","last_page":"629"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.8587656617164612},{"id":"https://openalex.org/keywords/pmos-logic","display_name":"PMOS logic","score":0.7531018853187561},{"id":"https://openalex.org/keywords/register-file","display_name":"Register file","score":0.6977165341377258},{"id":"https://openalex.org/keywords/negative-bias-temperature-instability","display_name":"Negative-bias temperature instability","score":0.6615381836891174},{"id":"https://openalex.org/keywords/boosting","display_name":"Boosting (machine learning)","score":0.6349655985832214},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5958908200263977},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.46644848585128784},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.4505980610847473},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.43189677596092224},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3874610364437103},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.3618350327014923},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.3578227758407593},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.2893674075603485},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2229604423046112},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.2190384864807129},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.20048460364341736},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.16999539732933044},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.15072283148765564}],"concepts":[{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.8587656617164612},{"id":"https://openalex.org/C27050352","wikidata":"https://www.wikidata.org/wiki/Q173605","display_name":"PMOS logic","level":4,"score":0.7531018853187561},{"id":"https://openalex.org/C117280010","wikidata":"https://www.wikidata.org/wiki/Q180944","display_name":"Register file","level":3,"score":0.6977165341377258},{"id":"https://openalex.org/C557185","wikidata":"https://www.wikidata.org/wiki/Q6987194","display_name":"Negative-bias temperature instability","level":5,"score":0.6615381836891174},{"id":"https://openalex.org/C46686674","wikidata":"https://www.wikidata.org/wiki/Q466303","display_name":"Boosting (machine learning)","level":2,"score":0.6349655985832214},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5958908200263977},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.46644848585128784},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.4505980610847473},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.43189677596092224},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3874610364437103},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.3618350327014923},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.3578227758407593},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.2893674075603485},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2229604423046112},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.2190384864807129},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.20048460364341736},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.16999539732933044},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.15072283148765564},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C202491316","wikidata":"https://www.wikidata.org/wiki/Q272683","display_name":"Instruction set","level":2,"score":0.0},{"id":"https://openalex.org/C119857082","wikidata":"https://www.wikidata.org/wiki/Q2539","display_name":"Machine learning","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tvlsi.2011.2109973","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tvlsi.2011.2109973","pdf_url":null,"source":{"id":"https://openalex.org/S37538908","display_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","issn_l":"1063-8210","issn":["1063-8210","1557-9999"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.8999999761581421}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":31,"referenced_works":["https://openalex.org/W1549770887","https://openalex.org/W1991837639","https://openalex.org/W1999878492","https://openalex.org/W2002612140","https://openalex.org/W2044206819","https://openalex.org/W2090860290","https://openalex.org/W2099746875","https://openalex.org/W2104114347","https://openalex.org/W2105834362","https://openalex.org/W2106119416","https://openalex.org/W2110999128","https://openalex.org/W2113115586","https://openalex.org/W2118859527","https://openalex.org/W2134869654","https://openalex.org/W2136066624","https://openalex.org/W2145238276","https://openalex.org/W2153456949","https://openalex.org/W2154451732","https://openalex.org/W2156174665","https://openalex.org/W2157009367","https://openalex.org/W2161864047","https://openalex.org/W2165071510","https://openalex.org/W2398203249","https://openalex.org/W4231523873","https://openalex.org/W4236345830","https://openalex.org/W4236892585","https://openalex.org/W4240146668","https://openalex.org/W4244330651","https://openalex.org/W4253202538","https://openalex.org/W6675651536","https://openalex.org/W6675904800"],"related_works":["https://openalex.org/W2185676503","https://openalex.org/W2021485224","https://openalex.org/W3008362801","https://openalex.org/W2966268953","https://openalex.org/W2089587802","https://openalex.org/W1998246226","https://openalex.org/W2542558641","https://openalex.org/W2080612374","https://openalex.org/W2108957996","https://openalex.org/W2185795880"],"abstract_inverted_index":{"Negative":[0],"bias":[1,81],"temperature":[2],"instability":[3],"(NBTI)":[4],"is":[5,76],"an":[6,35,134,147],"important":[7],"lifetime":[8],"reliability":[9,154],"problem":[10],"in":[11,29,78,102,171],"microprocessors.":[12],"SRAM-based":[13],"structures":[14],"within":[15],"the":[16,26,30,49,52,69,74,79,103,110,117,125,151,172,177],"processor":[17],"are":[18],"especially":[19],"susceptible":[20],"to":[21,47,58,106,116],"NBTI":[22],"since":[23],"one":[24,72],"of":[25,37,51,68,73,119,128,150,155,159,176],"pMOS":[27,54,100],"devices":[28,55,75,101],"memory":[31,104],"cell":[32,105],"always":[33,77],"has":[34],"input":[36],"\u201c0\u201d.":[38],"Previously":[39],"proposed":[40],"recovery":[41,111],"techniques":[42],"for":[43],"SRAM":[44,121],"cells":[45,140],"aim":[46],"balance":[48],"degradation":[50],"two":[53,161],"by":[56,113],"attempting":[57],"keep":[59],"their":[60],"inputs":[61],"at":[62,83],"a":[63,92,129],"logic":[64],"\u201c0\u201d":[65],"exactly":[66],"50%":[67],"time.":[70,86],"However,":[71],"negative":[80],"condition":[82],"any":[84],"given":[85],"In":[87],"this":[88],"paper,":[89],"we":[90],"propose":[91],"technique":[93],"called":[94],"Recovery":[95,166],"Boosting":[96,167],"that":[97,137,165],"allows":[98],"both":[99],"be":[107],"put":[108],"into":[109],"mode":[112],"slightly":[114],"modifying":[115],"design":[118,127],"conventional":[120],"cells.":[122],"We":[123,144,163],"evaluate":[124],"circuit-level":[126],"physical":[130],"register":[131,178],"file":[132,179],"and":[133,153,180,191],"issue":[135,181],"queue":[136,182],"use":[138],"such":[139],"through":[141],"SPICE-level":[142],"simulations.":[143],"then":[145],"conduct":[146],"architecture-level":[148],"evaluation":[149],"performance":[152],"using":[156],"area-neutral":[157],"designs":[158],"these":[160],"structures.":[162],"show":[164],"provides":[168],"significant":[169],"improvement":[170],"static":[173],"noise":[174],"margins":[175],"while":[183],"having":[184],"very":[185],"little":[186],"impact":[187],"on":[188],"power":[189],"consumption":[190],"performance.":[192]},"counts_by_year":[{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":2},{"year":2021,"cited_by_count":5},{"year":2019,"cited_by_count":4},{"year":2018,"cited_by_count":4},{"year":2017,"cited_by_count":2},{"year":2016,"cited_by_count":3},{"year":2015,"cited_by_count":1},{"year":2014,"cited_by_count":4},{"year":2013,"cited_by_count":3},{"year":2012,"cited_by_count":4}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}