{"id":"https://openalex.org/W2143770383","doi":"https://doi.org/10.1109/tvlsi.2010.2102374","title":"A Framework for Layout-Dependent STI Stress Analysis and Stress-Aware Circuit Optimization","display_name":"A Framework for Layout-Dependent STI Stress Analysis and Stress-Aware Circuit Optimization","publication_year":2011,"publication_date":"2011-01-28","ids":{"openalex":"https://openalex.org/W2143770383","doi":"https://doi.org/10.1109/tvlsi.2010.2102374","mag":"2143770383"},"language":"en","primary_location":{"id":"doi:10.1109/tvlsi.2010.2102374","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tvlsi.2010.2102374","pdf_url":null,"source":{"id":"https://openalex.org/S37538908","display_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","issn_l":"1063-8210","issn":["1063-8210","1557-9999"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5023132603","display_name":"Jiying Xue","orcid":null},"institutions":[{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]},{"id":"https://openalex.org/I99065089","display_name":"Tsinghua University","ror":"https://ror.org/03cve4549","country_code":"CN","type":"education","lineage":["https://openalex.org/I99065089"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jiying Xue","raw_affiliation_strings":["Institute of Microelectronics, Tsinghua University, Beijing, China","Inst. of Microelectron., Tsinghua Univ., Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, Tsinghua University, Beijing, China","institution_ids":["https://openalex.org/I99065089","https://openalex.org/I4210119392"]},{"raw_affiliation_string":"Inst. of Microelectron., Tsinghua Univ., Beijing, China","institution_ids":["https://openalex.org/I99065089"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5059155953","display_name":"Yangdong Deng","orcid":"https://orcid.org/0000-0002-8257-693X"},"institutions":[{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]},{"id":"https://openalex.org/I99065089","display_name":"Tsinghua University","ror":"https://ror.org/03cve4549","country_code":"CN","type":"education","lineage":["https://openalex.org/I99065089"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yangdong Deng","raw_affiliation_strings":["Institute of Microelectronics, Tsinghua University, Beijing, China","Inst. of Microelectron., Tsinghua Univ., Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, Tsinghua University, Beijing, China","institution_ids":["https://openalex.org/I99065089","https://openalex.org/I4210119392"]},{"raw_affiliation_string":"Inst. of Microelectron., Tsinghua Univ., Beijing, China","institution_ids":["https://openalex.org/I99065089"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112436964","display_name":"Zuochang Ye","orcid":null},"institutions":[{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]},{"id":"https://openalex.org/I99065089","display_name":"Tsinghua University","ror":"https://ror.org/03cve4549","country_code":"CN","type":"education","lineage":["https://openalex.org/I99065089"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zuochang Ye","raw_affiliation_strings":["Institute of Microelectronics, Tsinghua University, Beijing, China","Inst. of Microelectron., Tsinghua Univ., Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, Tsinghua University, Beijing, China","institution_ids":["https://openalex.org/I99065089","https://openalex.org/I4210119392"]},{"raw_affiliation_string":"Inst. of Microelectron., Tsinghua Univ., Beijing, China","institution_ids":["https://openalex.org/I99065089"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101810550","display_name":"Hongrui Wang","orcid":"https://orcid.org/0000-0002-2916-8849"},"institutions":[{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]},{"id":"https://openalex.org/I99065089","display_name":"Tsinghua University","ror":"https://ror.org/03cve4549","country_code":"CN","type":"education","lineage":["https://openalex.org/I99065089"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Hongrui Wang","raw_affiliation_strings":["Institute of Microelectronics, Tsinghua University, Beijing, China","Inst. of Microelectron., Tsinghua Univ., Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, Tsinghua University, Beijing, China","institution_ids":["https://openalex.org/I99065089","https://openalex.org/I4210119392"]},{"raw_affiliation_string":"Inst. of Microelectron., Tsinghua Univ., Beijing, China","institution_ids":["https://openalex.org/I99065089"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103718829","display_name":"Liu Yang","orcid":null},"institutions":[{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]},{"id":"https://openalex.org/I99065089","display_name":"Tsinghua University","ror":"https://ror.org/03cve4549","country_code":"CN","type":"education","lineage":["https://openalex.org/I99065089"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Liu Yang","raw_affiliation_strings":["Institute of Microelectronics, Tsinghua University, Beijing, China","Inst. of Microelectron., Tsinghua Univ., Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, Tsinghua University, Beijing, China","institution_ids":["https://openalex.org/I99065089","https://openalex.org/I4210119392"]},{"raw_affiliation_string":"Inst. of Microelectron., Tsinghua Univ., Beijing, China","institution_ids":["https://openalex.org/I99065089"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100433433","display_name":"Zhiping Yu","orcid":"https://orcid.org/0000-0001-8701-8438"},"institutions":[{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]},{"id":"https://openalex.org/I99065089","display_name":"Tsinghua University","ror":"https://ror.org/03cve4549","country_code":"CN","type":"education","lineage":["https://openalex.org/I99065089"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zhiping Yu","raw_affiliation_strings":["Institute of Microelectronics, Tsinghua University, Beijing, China","Inst. of Microelectron., Tsinghua Univ., Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, Tsinghua University, Beijing, China","institution_ids":["https://openalex.org/I99065089","https://openalex.org/I4210119392"]},{"raw_affiliation_string":"Inst. of Microelectron., Tsinghua Univ., Beijing, China","institution_ids":["https://openalex.org/I99065089"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":6,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":1.6218,"has_fulltext":false,"cited_by_count":24,"citation_normalized_percentile":{"value":0.85690108,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":99},"biblio":{"volume":"20","issue":"3","first_page":"498","last_page":"511"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/stress","display_name":"Stress (linguistics)","score":0.7076038122177124},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.45734429359436035},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3560630679130554},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.20734477043151855}],"concepts":[{"id":"https://openalex.org/C21036866","wikidata":"https://www.wikidata.org/wiki/Q181767","display_name":"Stress (linguistics)","level":2,"score":0.7076038122177124},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.45734429359436035},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3560630679130554},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.20734477043151855},{"id":"https://openalex.org/C41895202","wikidata":"https://www.wikidata.org/wiki/Q8162","display_name":"Linguistics","level":1,"score":0.0},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tvlsi.2010.2102374","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tvlsi.2010.2102374","pdf_url":null,"source":{"id":"https://openalex.org/S37538908","display_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","issn_l":"1063-8210","issn":["1063-8210","1557-9999"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":32,"referenced_works":["https://openalex.org/W1506342804","https://openalex.org/W1547783441","https://openalex.org/W2009846273","https://openalex.org/W2038667420","https://openalex.org/W2039791890","https://openalex.org/W2062164955","https://openalex.org/W2070121658","https://openalex.org/W2078640870","https://openalex.org/W2098899606","https://openalex.org/W2113875468","https://openalex.org/W2114357575","https://openalex.org/W2118456109","https://openalex.org/W2120475991","https://openalex.org/W2124222398","https://openalex.org/W2125411772","https://openalex.org/W2126870523","https://openalex.org/W2127276031","https://openalex.org/W2128369443","https://openalex.org/W2128613910","https://openalex.org/W2140232930","https://openalex.org/W2145117826","https://openalex.org/W2151269391","https://openalex.org/W2156586884","https://openalex.org/W2163231535","https://openalex.org/W2163318360","https://openalex.org/W2168439248","https://openalex.org/W2168765701","https://openalex.org/W2169661305","https://openalex.org/W2539660574","https://openalex.org/W3140034169","https://openalex.org/W6677766680","https://openalex.org/W6728868686"],"related_works":["https://openalex.org/W2899084033","https://openalex.org/W2748952813","https://openalex.org/W2390279801","https://openalex.org/W2358668433","https://openalex.org/W2093578348","https://openalex.org/W2376932109","https://openalex.org/W2382290278","https://openalex.org/W2766271392","https://openalex.org/W2350741829","https://openalex.org/W3004735627"],"abstract_inverted_index":{"With":[0,152],"the":[1,5,8,13,16,49,57,68,77,86,97,103,144,153,161,168],"continuous":[2],"shrinking":[3],"of":[4,10,15,71,76,99,105,132,146,163,170,187],"feature":[6],"size,":[7],"effect":[9],"stress":[11,28,101,121,128,147,166],"on":[12,67,85,102,148,167,192],"performance":[14,104,169],"IC":[17,40,133,189],"device":[18,45],"and":[19,33,80,112,117,173],"circuit":[20,55,87],"can":[21],"no":[22],"longer":[23],"be":[24],"ignored.":[25],"In":[26],"fact,":[27],"engineering":[29],"is":[30,62,73,139],"becoming":[31],"more":[32,34],"widely":[35],"used":[36],"today":[37],"in":[38],"advanced":[39],"manufacture":[41],"processes":[42],"to":[43,53,95,126,142,159,184],"improve":[44,54],"performance.":[46],"Different":[47],"from":[48,130],"intentionally":[50],"introduced":[51],"stresses":[52],"performance,":[56],"shallow-trench-isolation":[58],"(STI)":[59],"stress,":[60],"which":[61],"exerted":[63],"by":[64,108],"STI":[65,100,165],"wells":[66],"active":[69],"area":[70],"devices,":[72],"a":[74,92,185,193],"by-product":[75],"fabrication":[78],"process":[79,113],"has":[81,123,181],"increasingly":[82],"significant":[83],"impact":[84],"behavior.":[88],"This":[89],"paper":[90],"proposes":[91],"complete":[93],"flow":[94,180],"characterize":[96],"influence":[98,162],"RF/analog":[106,188],"circuits":[107,172],"considering":[109],"detailed":[110],"layout":[111],"information.":[114],"An":[115],"accurate":[116],"efficient":[118],"finite-element":[119],"method-based":[120],"simulator":[122],"been":[124,182],"developed":[125],"extract":[127],"distribution":[129],"layouts":[131],"designs.":[134],"The":[135,178],"existing":[136],"MOSFET":[137],"model":[138],"also":[140],"enhanced":[141,154],"capture":[143],"effects":[145],"mobility,":[149],"threshold":[150],"voltage.":[151],"model,":[155],"we":[156],"are":[157],"able":[158],"study":[160],"layout-dependent":[164],"real":[171],"establish":[174],"corresponding":[175],"optimization":[176],"strategies.":[177],"proposed":[179],"applied":[183],"series":[186],"designs":[190],"based":[191],"90-nm":[194],"CMOS":[195],"technology.":[196]},"counts_by_year":[{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":2},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":6},{"year":2016,"cited_by_count":2},{"year":2015,"cited_by_count":4},{"year":2014,"cited_by_count":1},{"year":2013,"cited_by_count":3},{"year":2012,"cited_by_count":2}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}