{"id":"https://openalex.org/W1996356878","doi":"https://doi.org/10.1109/tvlsi.2010.2088143","title":"A Novel Sensing Circuit for Deep Submicron Spin Transfer Torque MRAM (STT-MRAM)","display_name":"A Novel Sensing Circuit for Deep Submicron Spin Transfer Torque MRAM (STT-MRAM)","publication_year":2010,"publication_date":"2010-11-23","ids":{"openalex":"https://openalex.org/W1996356878","doi":"https://doi.org/10.1109/tvlsi.2010.2088143","mag":"1996356878"},"language":"en","primary_location":{"id":"doi:10.1109/tvlsi.2010.2088143","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tvlsi.2010.2088143","pdf_url":null,"source":{"id":"https://openalex.org/S37538908","display_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","issn_l":"1063-8210","issn":["1063-8210","1557-9999"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100729885","display_name":"Ji Su Kim","orcid":"https://orcid.org/0000-0002-9501-9665"},"institutions":[{"id":"https://openalex.org/I193775966","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96","country_code":"KR","type":"education","lineage":["https://openalex.org/I193775966"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Jisu Kim","raw_affiliation_strings":["School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea","[Sch. of Electr. & Electron. Eng., Yonsei Univ., Seoul, South Korea]"],"affiliations":[{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea","institution_ids":["https://openalex.org/I193775966"]},{"raw_affiliation_string":"[Sch. of Electr. & Electron. Eng., Yonsei Univ., Seoul, South Korea]","institution_ids":["https://openalex.org/I193775966"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5084041151","display_name":"Kyungho Ryu","orcid":"https://orcid.org/0000-0002-0354-4797"},"institutions":[{"id":"https://openalex.org/I193775966","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96","country_code":"KR","type":"education","lineage":["https://openalex.org/I193775966"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kyungho Ryu","raw_affiliation_strings":["School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea","[Sch. of Electr. & Electron. Eng., Yonsei Univ., Seoul, South Korea]"],"affiliations":[{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea","institution_ids":["https://openalex.org/I193775966"]},{"raw_affiliation_string":"[Sch. of Electr. & Electron. Eng., Yonsei Univ., Seoul, South Korea]","institution_ids":["https://openalex.org/I193775966"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103061707","display_name":"Seung H. Kang","orcid":"https://orcid.org/0000-0003-4270-9918"},"institutions":[{"id":"https://openalex.org/I19268510","display_name":"Qualcomm (United Kingdom)","ror":"https://ror.org/04d3djg48","country_code":"GB","type":"company","lineage":["https://openalex.org/I19268510","https://openalex.org/I4210087596"]},{"id":"https://openalex.org/I4210087596","display_name":"Qualcomm (United States)","ror":"https://ror.org/002zrf773","country_code":"US","type":"company","lineage":["https://openalex.org/I4210087596"]},{"id":"https://openalex.org/I4210111675","display_name":"Market Matters","ror":"https://ror.org/021yan307","country_code":"US","type":"nonprofit","lineage":["https://openalex.org/I4210111675"]}],"countries":["GB","US"],"is_corresponding":false,"raw_author_name":"Seung H. Kang","raw_affiliation_strings":["QUALCOMM, Inc.orporated, San Diego, CA, USA","Qualcomm Inc.  San Diego CA USA"],"affiliations":[{"raw_affiliation_string":"QUALCOMM, Inc.orporated, San Diego, CA, USA","institution_ids":["https://openalex.org/I4210087596"]},{"raw_affiliation_string":"Qualcomm Inc.  San Diego CA USA","institution_ids":["https://openalex.org/I19268510","https://openalex.org/I4210111675"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5037010076","display_name":"Seong\u2010Ook Jung","orcid":"https://orcid.org/0000-0003-0757-2581"},"institutions":[{"id":"https://openalex.org/I193775966","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96","country_code":"KR","type":"education","lineage":["https://openalex.org/I193775966"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Seong-Ook Jung","raw_affiliation_strings":["School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea","[Sch. of Electr. & Electron. Eng., Yonsei Univ., Seoul, South Korea]"],"affiliations":[{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea","institution_ids":["https://openalex.org/I193775966"]},{"raw_affiliation_string":"[Sch. of Electr. & Electron. Eng., Yonsei Univ., Seoul, South Korea]","institution_ids":["https://openalex.org/I193775966"]}]}],"institutions":[],"countries_distinct_count":3,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5100729885"],"corresponding_institution_ids":["https://openalex.org/I193775966"],"apc_list":null,"apc_paid":null,"fwci":0.37938443,"has_fulltext":false,"cited_by_count":93,"citation_normalized_percentile":{"value":0.62718531,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":94,"max":100},"biblio":{"volume":"20","issue":"1","first_page":"181","last_page":"186"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9973000288009644,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/magnetoresistive-random-access-memory","display_name":"Magnetoresistive random-access memory","score":0.8646508455276489},{"id":"https://openalex.org/keywords/spin-transfer-torque","display_name":"Spin-transfer torque","score":0.7290061116218567},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5759726166725159},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.5681551694869995},{"id":"https://openalex.org/keywords/margin","display_name":"Margin (machine learning)","score":0.5032941699028015},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.49639588594436646},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.46041303873062134},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.40689903497695923},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.22031867504119873},{"id":"https://openalex.org/keywords/random-access-memory","display_name":"Random access memory","score":0.195058673620224},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.16493383049964905},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.16006061434745789},{"id":"https://openalex.org/keywords/magnetic-field","display_name":"Magnetic field","score":0.08102932572364807}],"concepts":[{"id":"https://openalex.org/C46891859","wikidata":"https://www.wikidata.org/wiki/Q1061546","display_name":"Magnetoresistive random-access memory","level":3,"score":0.8646508455276489},{"id":"https://openalex.org/C609986","wikidata":"https://www.wikidata.org/wiki/Q844840","display_name":"Spin-transfer torque","level":4,"score":0.7290061116218567},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5759726166725159},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5681551694869995},{"id":"https://openalex.org/C774472","wikidata":"https://www.wikidata.org/wiki/Q6760393","display_name":"Margin (machine learning)","level":2,"score":0.5032941699028015},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.49639588594436646},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.46041303873062134},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.40689903497695923},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.22031867504119873},{"id":"https://openalex.org/C2994168587","wikidata":"https://www.wikidata.org/wiki/Q5295","display_name":"Random access memory","level":2,"score":0.195058673620224},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.16493383049964905},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.16006061434745789},{"id":"https://openalex.org/C115260700","wikidata":"https://www.wikidata.org/wiki/Q11408","display_name":"Magnetic field","level":2,"score":0.08102932572364807},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C32546565","wikidata":"https://www.wikidata.org/wiki/Q856711","display_name":"Magnetization","level":3,"score":0.0},{"id":"https://openalex.org/C119857082","wikidata":"https://www.wikidata.org/wiki/Q2539","display_name":"Machine learning","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tvlsi.2010.2088143","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tvlsi.2010.2088143","pdf_url":null,"source":{"id":"https://openalex.org/S37538908","display_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","issn_l":"1063-8210","issn":["1063-8210","1557-9999"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.699999988079071}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":11,"referenced_works":["https://openalex.org/W1534052597","https://openalex.org/W2008904077","https://openalex.org/W2046515116","https://openalex.org/W2077741710","https://openalex.org/W2101328080","https://openalex.org/W2120699192","https://openalex.org/W2129362240","https://openalex.org/W2149541432","https://openalex.org/W2168792094","https://openalex.org/W2543205889","https://openalex.org/W2788575652"],"related_works":["https://openalex.org/W4388285079","https://openalex.org/W2546997659","https://openalex.org/W2733919783","https://openalex.org/W2425808153","https://openalex.org/W2404332818","https://openalex.org/W4281561022","https://openalex.org/W2188761345","https://openalex.org/W60430064","https://openalex.org/W3006384944","https://openalex.org/W393693633"],"abstract_inverted_index":{"STT-MRAM":[0,24],"has":[1],"emerged":[2],"as":[3],"a":[4,34,40,45,74,81,106,115],"compelling":[5],"candidate":[6],"for":[7,87],"universal":[8],"memory,":[9],"but":[10],"demands":[11],"an":[12,67,97],"advanced":[13],"sensing":[14,20,27,36,64,75,94,107],"circuit":[15,37,65,95],"to":[16,28],"achieve":[17],"the":[18,62,92],"proper":[19],"margin.":[21],"In":[22],"addition,":[23],"requires":[25],"low-current":[26],"avoid":[29],"read":[30,68,98],"disturbance.":[31],"We":[32],"report":[33],"novel":[35],"that":[38,61],"utilizes":[39],"source":[41],"degeneration":[42],"scheme":[43],"and":[44],"balanced":[46],"reference":[47],"scheme.":[48],"Monte":[49],"Carlo":[50],"HSPICE":[51],"simulation":[52],"results":[53],"using":[54],"65":[55],"nm":[56],"technology":[57],"model":[58],"parameters":[59],"show":[60],"proposed":[63],"achieves":[66,96],"access":[69,99],"yield":[70,100],"of":[71,77,84,101,109,118],"96.3%":[72],"with":[73,105],"current":[76,108],"43.1":[78],"uA":[79,111],"at":[80,114],"supply":[82,116],"voltage":[83,117],"1.1":[85,119],"V":[86,120],"32":[88],"M":[89],"bit,":[90],"whereas":[91],"conventional":[93],"only":[102],"0%":[103],"(81.5%)":[104],"48.0":[110],"(64.2":[112],"uA)":[113],"(1.6":[121],"V).":[122]},"counts_by_year":[{"year":2025,"cited_by_count":5},{"year":2024,"cited_by_count":3},{"year":2023,"cited_by_count":7},{"year":2022,"cited_by_count":5},{"year":2021,"cited_by_count":6},{"year":2020,"cited_by_count":10},{"year":2019,"cited_by_count":5},{"year":2018,"cited_by_count":7},{"year":2017,"cited_by_count":7},{"year":2016,"cited_by_count":15},{"year":2015,"cited_by_count":9},{"year":2014,"cited_by_count":12},{"year":2013,"cited_by_count":2}],"updated_date":"2026-02-20T08:17:22.645390","created_date":"2025-10-10T00:00:00"}