{"id":"https://openalex.org/W2122287325","doi":"https://doi.org/10.1109/tvlsi.2009.2032192","title":"Design Margin Exploration of Spin-Transfer Torque RAM (STT-RAM) in Scaled Technologies","display_name":"Design Margin Exploration of Spin-Transfer Torque RAM (STT-RAM) in Scaled Technologies","publication_year":2009,"publication_date":"2009-11-17","ids":{"openalex":"https://openalex.org/W2122287325","doi":"https://doi.org/10.1109/tvlsi.2009.2032192","mag":"2122287325"},"language":"en","primary_location":{"id":"doi:10.1109/tvlsi.2009.2032192","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tvlsi.2009.2032192","pdf_url":null,"source":{"id":"https://openalex.org/S37538908","display_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","issn_l":"1063-8210","issn":["1063-8210","1557-9999"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5058073627","display_name":"Yiran Chen","orcid":"https://orcid.org/0000-0002-1486-8412"},"institutions":[{"id":"https://openalex.org/I131787340","display_name":"Seagate (United States)","ror":"https://ror.org/04p1xtv71","country_code":"US","type":"company","lineage":["https://openalex.org/I131787340"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Yiran Chen","raw_affiliation_strings":["Seagate Technologies, Inc., Bloomington, MN, USA",", Seagate Technology, Bloomington, MN, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Seagate Technologies, Inc., Bloomington, MN, USA","institution_ids":["https://openalex.org/I131787340"]},{"raw_affiliation_string":", Seagate Technology, Bloomington, MN, USA","institution_ids":["https://openalex.org/I131787340"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5036254084","display_name":"Xiaobin Wang","orcid":"https://orcid.org/0000-0003-0606-4710"},"institutions":[{"id":"https://openalex.org/I131787340","display_name":"Seagate (United States)","ror":"https://ror.org/04p1xtv71","country_code":"US","type":"company","lineage":["https://openalex.org/I131787340"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Xiaobin Wang","raw_affiliation_strings":["Seagate Technologies, Inc., Bloomington, MN, USA",", Seagate Technology, Bloomington, MN, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Seagate Technologies, Inc., Bloomington, MN, USA","institution_ids":["https://openalex.org/I131787340"]},{"raw_affiliation_string":", Seagate Technology, Bloomington, MN, USA","institution_ids":["https://openalex.org/I131787340"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100429403","display_name":"Hai Li","orcid":"https://orcid.org/0000-0003-3228-6544"},"institutions":[{"id":"https://openalex.org/I90965887","display_name":"SUNY Polytechnic Institute","ror":"https://ror.org/000fxgx19","country_code":"US","type":"education","lineage":["https://openalex.org/I90965887"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Hai Li","raw_affiliation_strings":["Department of Electrical & Computer Engineering, Polytechnic Institute of New york University, Brooklyn, NY, USA","Dept. of Electr. & Comput. Eng., NYU, Brooklyn, NY, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical & Computer Engineering, Polytechnic Institute of New york University, Brooklyn, NY, USA","institution_ids":["https://openalex.org/I90965887"]},{"raw_affiliation_string":"Dept. of Electr. & Comput. Eng., NYU, Brooklyn, NY, USA","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109107944","display_name":"Haiwen Xi","orcid":null},"institutions":[{"id":"https://openalex.org/I131787340","display_name":"Seagate (United States)","ror":"https://ror.org/04p1xtv71","country_code":"US","type":"company","lineage":["https://openalex.org/I131787340"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Haiwen Xi","raw_affiliation_strings":["Seagate Technologies, Inc., Bloomington, MN, USA",", Seagate Technology, Bloomington, MN, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Seagate Technologies, Inc., Bloomington, MN, USA","institution_ids":["https://openalex.org/I131787340"]},{"raw_affiliation_string":", Seagate Technology, Bloomington, MN, USA","institution_ids":["https://openalex.org/I131787340"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101441166","display_name":"Yuan Yan","orcid":"https://orcid.org/0000-0002-6564-0418"},"institutions":[{"id":"https://openalex.org/I86725329","display_name":"Hitachi Global Storage Technologies (United States)","ror":"https://ror.org/02q0s1x22","country_code":"US","type":"company","lineage":["https://openalex.org/I86725329"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Yuan Yan","raw_affiliation_strings":["Hitachi Global Storage Technologies, Inc., San Jose, CA, USA","Hitachi Global Storage Technol., San Jose, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Hitachi Global Storage Technologies, Inc., San Jose, CA, USA","institution_ids":["https://openalex.org/I86725329"]},{"raw_affiliation_string":"Hitachi Global Storage Technol., San Jose, CA, USA","institution_ids":["https://openalex.org/I86725329"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5074539514","display_name":"Wenzhong Zhu","orcid":"https://orcid.org/0000-0002-9303-9574"},"institutions":[{"id":"https://openalex.org/I131787340","display_name":"Seagate (United States)","ror":"https://ror.org/04p1xtv71","country_code":"US","type":"company","lineage":["https://openalex.org/I131787340"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Wenzhong Zhu","raw_affiliation_strings":["Seagate Technologies, Inc., Bloomington, MN, USA",", Seagate Technology, Bloomington, MN, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Seagate Technologies, Inc., Bloomington, MN, USA","institution_ids":["https://openalex.org/I131787340"]},{"raw_affiliation_string":", Seagate Technology, Bloomington, MN, USA","institution_ids":["https://openalex.org/I131787340"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":2.7417,"has_fulltext":false,"cited_by_count":85,"citation_normalized_percentile":{"value":0.90682934,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":89,"max":100},"biblio":{"volume":"18","issue":"12","first_page":"1724","last_page":"1734"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11181","display_name":"Advanced Data Storage Technologies","score":0.9952999949455261,"subfield":{"id":"https://openalex.org/subfields/1705","display_name":"Computer Networks and Communications"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11222","display_name":"Magnetic Properties and Applications","score":0.9952999949455261,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/spin-transfer-torque","display_name":"Spin-transfer torque","score":0.8269843459129333},{"id":"https://openalex.org/keywords/magnetoresistive-random-access-memory","display_name":"Magnetoresistive random-access memory","score":0.6914135217666626},{"id":"https://openalex.org/keywords/node","display_name":"Node (physics)","score":0.6076865792274475},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5896669626235962},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.5842401385307312},{"id":"https://openalex.org/keywords/scalability","display_name":"Scalability","score":0.5546033382415771},{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.5455167293548584},{"id":"https://openalex.org/keywords/non-volatile-memory","display_name":"Non-volatile memory","score":0.4980614185333252},{"id":"https://openalex.org/keywords/tunnel-magnetoresistance","display_name":"Tunnel magnetoresistance","score":0.49312087893486023},{"id":"https://openalex.org/keywords/memory-cell","display_name":"Memory cell","score":0.4853328764438629},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4671083688735962},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4483621120452881},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.40885013341903687},{"id":"https://openalex.org/keywords/random-access-memory","display_name":"Random access memory","score":0.282439261674881},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.27636808156967163},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.26615941524505615},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.24681302905082703},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.2246004045009613},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.1474950909614563},{"id":"https://openalex.org/keywords/magnetization","display_name":"Magnetization","score":0.10742482542991638},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.1065899133682251},{"id":"https://openalex.org/keywords/magnetic-field","display_name":"Magnetic field","score":0.0879703164100647}],"concepts":[{"id":"https://openalex.org/C609986","wikidata":"https://www.wikidata.org/wiki/Q844840","display_name":"Spin-transfer torque","level":4,"score":0.8269843459129333},{"id":"https://openalex.org/C46891859","wikidata":"https://www.wikidata.org/wiki/Q1061546","display_name":"Magnetoresistive random-access memory","level":3,"score":0.6914135217666626},{"id":"https://openalex.org/C62611344","wikidata":"https://www.wikidata.org/wiki/Q1062658","display_name":"Node (physics)","level":2,"score":0.6076865792274475},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5896669626235962},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5842401385307312},{"id":"https://openalex.org/C48044578","wikidata":"https://www.wikidata.org/wiki/Q727490","display_name":"Scalability","level":2,"score":0.5546033382415771},{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.5455167293548584},{"id":"https://openalex.org/C177950962","wikidata":"https://www.wikidata.org/wiki/Q10997658","display_name":"Non-volatile memory","level":2,"score":0.4980614185333252},{"id":"https://openalex.org/C56202322","wikidata":"https://www.wikidata.org/wiki/Q1884383","display_name":"Tunnel magnetoresistance","level":3,"score":0.49312087893486023},{"id":"https://openalex.org/C2776638159","wikidata":"https://www.wikidata.org/wiki/Q18343761","display_name":"Memory cell","level":4,"score":0.4853328764438629},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4671083688735962},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4483621120452881},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.40885013341903687},{"id":"https://openalex.org/C2994168587","wikidata":"https://www.wikidata.org/wiki/Q5295","display_name":"Random access memory","level":2,"score":0.282439261674881},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.27636808156967163},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.26615941524505615},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.24681302905082703},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.2246004045009613},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.1474950909614563},{"id":"https://openalex.org/C32546565","wikidata":"https://www.wikidata.org/wiki/Q856711","display_name":"Magnetization","level":3,"score":0.10742482542991638},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.1065899133682251},{"id":"https://openalex.org/C115260700","wikidata":"https://www.wikidata.org/wiki/Q11408","display_name":"Magnetic field","level":2,"score":0.0879703164100647},{"id":"https://openalex.org/C66938386","wikidata":"https://www.wikidata.org/wiki/Q633538","display_name":"Structural engineering","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C77088390","wikidata":"https://www.wikidata.org/wiki/Q8513","display_name":"Database","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tvlsi.2009.2032192","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tvlsi.2009.2032192","pdf_url":null,"source":{"id":"https://openalex.org/S37538908","display_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","issn_l":"1063-8210","issn":["1063-8210","1557-9999"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.4399999976158142}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":23,"referenced_works":["https://openalex.org/W1566916904","https://openalex.org/W1663877114","https://openalex.org/W1964504828","https://openalex.org/W1965522547","https://openalex.org/W1976833057","https://openalex.org/W1982398126","https://openalex.org/W1984979848","https://openalex.org/W1993991717","https://openalex.org/W1995771228","https://openalex.org/W2008904077","https://openalex.org/W2014987330","https://openalex.org/W2026752628","https://openalex.org/W2069345435","https://openalex.org/W2075769654","https://openalex.org/W2080659521","https://openalex.org/W2081007547","https://openalex.org/W2106738517","https://openalex.org/W2137772787","https://openalex.org/W2147031288","https://openalex.org/W2157024459","https://openalex.org/W2543205889","https://openalex.org/W2544913214","https://openalex.org/W6652408048"],"related_works":["https://openalex.org/W4235980920","https://openalex.org/W3155602812","https://openalex.org/W2734552968","https://openalex.org/W4244386272","https://openalex.org/W2060175859","https://openalex.org/W2055782529","https://openalex.org/W2199736711","https://openalex.org/W2541005978","https://openalex.org/W2560292000","https://openalex.org/W2122287325"],"abstract_inverted_index":{"We":[0],"propose":[1],"a":[2,26,83,103,109,138],"magnetic":[3,27],"and":[4,116,156,166],"electric":[5],"level":[6],"spin-transfer":[7],"torque":[8],"random":[9],"access":[10],"memory":[11,121],"(STT-RAM)":[12],"cell":[13,66,74,81,99,106,122,172],"model":[14,24,107],"to":[15,33,47,57,137,169],"simulate":[16],"the":[17,37,41,48,71,97,117,120,131,146,150,154,157],"write":[18],"operation":[19],"of":[20,25,40,78,96,119,133,153],"an":[21,64,79],"STT-RAM.":[22],"The":[23,76,114,143],"tunneling":[28],"junction":[29],"(MTJ)":[30],"is":[31,45,54],"modified":[32],"take":[34],"into":[35],"account":[36],"electrical":[38],"response":[39],"MOS":[42,158],"transistor":[43,159],"that":[44,88],"connected":[46],"MTJ.":[49],"A":[50],"dynamic":[51],"design":[52,61,67,77],"flow":[53],"also":[55,179],"proposed":[56],"minimize":[58],"any":[59],"unnecessary":[60],"margin":[62],"in":[63],"STT-RAM":[65,73,80,98,105,134],"by":[68],"leveraging":[69],"from":[70],"new":[72],"model.":[75],"with":[82,102],"one-transistor-one-MTJ":[84],"(1T1J)":[85],"structure":[86],"shows":[87],"our":[89,127],"technique":[90],"can":[91],"reduce":[92],"more":[93],"than":[94],"22%":[95],"area,":[100],"compared":[101],"conventional":[104],"at":[108,174],"TSMC":[110],"90-nm":[111],"technology":[112,135,141,176],"node.":[113,142],"performance":[115],"reliability":[118],"were":[123],"unaffected.":[124],"By":[125],"using":[126],"model,":[128],"we":[129],"analyzed":[130],"scalability":[132],"down":[136],"22-nm":[139,175],"Bulk-CMOS":[140],"tradeoffs":[144],"among":[145],"MTJ":[147,155],"switching":[148],"current,":[149],"thermal":[151],"stability":[152],"driving":[160],"strength":[161],"are":[162,178],"discussed.":[163,180],"Some":[164],"magnetic-":[165],"circuit-level":[167],"solutions":[168],"achieve":[170],"9F2STT-RAM":[171],"area":[173],"node":[177]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":2},{"year":2020,"cited_by_count":2},{"year":2018,"cited_by_count":11},{"year":2017,"cited_by_count":6},{"year":2016,"cited_by_count":12},{"year":2015,"cited_by_count":15},{"year":2014,"cited_by_count":14},{"year":2013,"cited_by_count":5},{"year":2012,"cited_by_count":12}],"updated_date":"2026-07-29T09:40:50.615796","created_date":"2025-10-10T00:00:00"}