{"id":"https://openalex.org/W4411337054","doi":"https://doi.org/10.1109/tim.2025.3579735","title":"Remaining Useful Life Prediction of SiC MOSFETs Using the Autoformer-RELM Model","display_name":"Remaining Useful Life Prediction of SiC MOSFETs Using the Autoformer-RELM Model","publication_year":2025,"publication_date":"2025-01-01","ids":{"openalex":"https://openalex.org/W4411337054","doi":"https://doi.org/10.1109/tim.2025.3579735"},"language":"en","primary_location":{"id":"doi:10.1109/tim.2025.3579735","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tim.2025.3579735","pdf_url":null,"source":{"id":"https://openalex.org/S10892749","display_name":"IEEE Transactions on Instrumentation and Measurement","issn_l":"0018-9456","issn":["0018-9456","1557-9662"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Instrumentation and Measurement","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100627853","display_name":"Wei Luo","orcid":"https://orcid.org/0000-0002-8319-3527"},"institutions":[{"id":"https://openalex.org/I148128674","display_name":"University of Shanghai for Science and Technology","ror":"https://ror.org/00ay9v204","country_code":"CN","type":"education","lineage":["https://openalex.org/I148128674"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Wei Luo","raw_affiliation_strings":["Department of Electrical Engineering, University of Shanghai for Science and Technology, Shanghai, China"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, University of Shanghai for Science and Technology, Shanghai, China","institution_ids":["https://openalex.org/I148128674"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5005604902","display_name":"Yufan Liu","orcid":"https://orcid.org/0009-0009-0177-6031"},"institutions":[{"id":"https://openalex.org/I148128674","display_name":"University of Shanghai for Science and Technology","ror":"https://ror.org/00ay9v204","country_code":"CN","type":"education","lineage":["https://openalex.org/I148128674"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yufan Liu","raw_affiliation_strings":["Department of Electrical Engineering, University of Shanghai for Science and Technology, Shanghai, China"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, University of Shanghai for Science and Technology, Shanghai, China","institution_ids":["https://openalex.org/I148128674"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5078429723","display_name":"Yili Pan","orcid":"https://orcid.org/0009-0009-0177-2989"},"institutions":[{"id":"https://openalex.org/I148128674","display_name":"University of Shanghai for Science and Technology","ror":"https://ror.org/00ay9v204","country_code":"CN","type":"education","lineage":["https://openalex.org/I148128674"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yili Pan","raw_affiliation_strings":["Department of Electrical Engineering, University of Shanghai for Science and Technology, Shanghai, China"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, University of Shanghai for Science and Technology, Shanghai, China","institution_ids":["https://openalex.org/I148128674"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5067889609","display_name":"Lin Bai","orcid":null},"institutions":[{"id":"https://openalex.org/I148128674","display_name":"University of Shanghai for Science and Technology","ror":"https://ror.org/00ay9v204","country_code":"CN","type":"education","lineage":["https://openalex.org/I148128674"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Lin Bai","raw_affiliation_strings":["Department of Electrical Engineering, University of Shanghai for Science and Technology, Shanghai, China"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, University of Shanghai for Science and Technology, Shanghai, China","institution_ids":["https://openalex.org/I148128674"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5100627853"],"corresponding_institution_ids":["https://openalex.org/I148128674"],"apc_list":null,"apc_paid":null,"fwci":1.4625,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.83216574,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":95,"max":96},"biblio":{"volume":"74","issue":null,"first_page":"1","last_page":"11"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9921000003814697,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9921000003814697,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9821000099182129,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11451","display_name":"Advanced Machining and Optimization Techniques","score":0.9717000126838684,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.5824835896492004},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4951283037662506},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4362436830997467},{"id":"https://openalex.org/keywords/semiconductor-device-modeling","display_name":"Semiconductor device modeling","score":0.4330359995365143},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.367387980222702},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.3606363534927368},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.33602502942085266},{"id":"https://openalex.org/keywords/engineering-physics","display_name":"Engineering physics","score":0.329632967710495},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3151428699493408},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.2761843204498291},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2519826292991638},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.16203400492668152},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.15849247574806213},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.15830543637275696}],"concepts":[{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.5824835896492004},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4951283037662506},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4362436830997467},{"id":"https://openalex.org/C4775677","wikidata":"https://www.wikidata.org/wiki/Q7449393","display_name":"Semiconductor device modeling","level":3,"score":0.4330359995365143},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.367387980222702},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.3606363534927368},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.33602502942085266},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.329632967710495},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3151428699493408},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2761843204498291},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2519826292991638},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.16203400492668152},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.15849247574806213},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.15830543637275696}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tim.2025.3579735","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tim.2025.3579735","pdf_url":null,"source":{"id":"https://openalex.org/S10892749","display_name":"IEEE Transactions on Instrumentation and Measurement","issn_l":"0018-9456","issn":["0018-9456","1557-9662"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Instrumentation and Measurement","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.5199999809265137,"display_name":"Zero hunger","id":"https://metadata.un.org/sdg/2"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":36,"referenced_works":["https://openalex.org/W2082804449","https://openalex.org/W2586989731","https://openalex.org/W2588363053","https://openalex.org/W2614719036","https://openalex.org/W2766418078","https://openalex.org/W2884957744","https://openalex.org/W2914811080","https://openalex.org/W2967146328","https://openalex.org/W2969475609","https://openalex.org/W2997575911","https://openalex.org/W3033928040","https://openalex.org/W3095295241","https://openalex.org/W3101967035","https://openalex.org/W3113391189","https://openalex.org/W3125460377","https://openalex.org/W3129704675","https://openalex.org/W3198203046","https://openalex.org/W3204801262","https://openalex.org/W4226069359","https://openalex.org/W4310450240","https://openalex.org/W4319341854","https://openalex.org/W4323022530","https://openalex.org/W4327661948","https://openalex.org/W4361732282","https://openalex.org/W4365141837","https://openalex.org/W4375801452","https://openalex.org/W4377042791","https://openalex.org/W4377291033","https://openalex.org/W4386212370","https://openalex.org/W4387350511","https://openalex.org/W4390691388","https://openalex.org/W4394597191","https://openalex.org/W4400230101","https://openalex.org/W4400645792","https://openalex.org/W4402572109","https://openalex.org/W4403723026"],"related_works":["https://openalex.org/W4321379269","https://openalex.org/W4386066422","https://openalex.org/W1556217118","https://openalex.org/W2548594263","https://openalex.org/W2540368402","https://openalex.org/W2966234605","https://openalex.org/W2055409173","https://openalex.org/W2539702774","https://openalex.org/W1591186069","https://openalex.org/W2533036699"],"abstract_inverted_index":{"The":[0,113],"reliability":[1,146],"of":[2,15,151],"SiC":[3,66,152],"MOSFETs":[4,153],"plays":[5],"a":[6,23,72],"critical":[7,58],"role":[8],"in":[9,61,127],"ensuring":[10],"the":[11,20,47,57,92,145],"stability":[12],"and":[13,25,83,105,110,123,148,154],"safety":[14],"power":[16,62,156],"electronic":[17],"converters,":[18],"highlighting":[19],"need":[21],"for":[22,65,85],"precise":[24],"data-driven":[26],"approach":[27],"to":[28,100,134],"predict":[29],"their":[30],"Remaining":[31],"Useful":[32],"Life":[33],"(RUL).":[34],"This":[35],"study":[36],"focuses":[37],"on":[38,69],"developing":[39],"an":[40],"accurate":[41],"RUL":[42,86,136],"prediction":[43,74,130,137],"model":[44,94,115],"by":[45,97,119],"identifying":[46],"on-state":[48],"drain-source":[49],"voltage":[50],"(<italic":[51],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[52,54],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">V</i><sub":[53],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">ds_on</sub>)":[55],"as":[56],"failure":[59],"parameter":[60],"cycling":[63],"experiments":[64],"MOSFETs.":[67],"Based":[68],"experimental":[70],"data,":[71],"hybrid":[73],"model,":[75],"Autoformer-Regularized":[76],"Extreme":[77],"Learning":[78],"Machine":[79],"(RELM),":[80],"is":[81],"proposed":[82],"validated":[84],"prediction.":[87],"Experimental":[88],"results":[89],"demonstrate":[90],"that":[91],"Autoformer-RELM":[93,114],"reduces":[95],"MAPE":[96],"26.84%":[98],"compared":[99],"Autoformer,":[101],"while":[102],"achieving":[103],"55.56%":[104],"57.45%":[106],"improvements":[107],"over":[108],"Informer":[109],"LSTM,":[111],"respectively.":[112],"outperforms":[116],"traditional":[117],"approaches":[118],"effectively":[120],"handling":[121],"nonlinearity":[122],"long-term":[124],"dependencies,":[125],"resulting":[126],"significantly":[128],"improved":[129],"accuracy.":[131],"In":[132],"addition":[133],"advancing":[135],"methodologies,":[138],"this":[139],"research":[140],"provides":[141],"meaningful":[142],"insights":[143],"into":[144],"analysis":[147],"practical":[149],"applications":[150],"other":[155],"devices.":[157]},"counts_by_year":[{"year":2025,"cited_by_count":2}],"updated_date":"2026-03-27T05:58:40.876381","created_date":"2025-10-10T00:00:00"}