{"id":"https://openalex.org/W4408970704","doi":"https://doi.org/10.1109/tim.2025.3555731","title":"Switching Energy Losses Characterization of Discrete SiC Power Transistors\u2014A New Thermal Approach","display_name":"Switching Energy Losses Characterization of Discrete SiC Power Transistors\u2014A New Thermal Approach","publication_year":2025,"publication_date":"2025-01-01","ids":{"openalex":"https://openalex.org/W4408970704","doi":"https://doi.org/10.1109/tim.2025.3555731"},"language":"en","primary_location":{"id":"doi:10.1109/tim.2025.3555731","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tim.2025.3555731","pdf_url":null,"source":{"id":"https://openalex.org/S10892749","display_name":"IEEE Transactions on Instrumentation and Measurement","issn_l":"0018-9456","issn":["0018-9456","1557-9662"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Instrumentation and Measurement","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5068148650","display_name":"Pawe\u0142 G\u00f3recki","orcid":"https://orcid.org/0000-0001-5544-2373"},"institutions":[{"id":"https://openalex.org/I4210125238","display_name":"Gdynia Maritime University","ror":"https://ror.org/02vscf791","country_code":"PL","type":"education","lineage":["https://openalex.org/I4210125238"]}],"countries":["PL"],"is_corresponding":false,"raw_author_name":"Pawe\u0142 G\u00f3recki","raw_affiliation_strings":["Department of Ship and Industrial Automation, Gdynia Maritime University, Gdynia, Poland"],"raw_orcid":"https://orcid.org/0000-0001-5544-2373","affiliations":[{"raw_affiliation_string":"Department of Ship and Industrial Automation, Gdynia Maritime University, Gdynia, Poland","institution_ids":["https://openalex.org/I4210125238"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5052079536","display_name":"Krzysztof G\u00f3recki","orcid":"https://orcid.org/0000-0002-9857-8235"},"institutions":[{"id":"https://openalex.org/I4210125238","display_name":"Gdynia Maritime University","ror":"https://ror.org/02vscf791","country_code":"PL","type":"education","lineage":["https://openalex.org/I4210125238"]}],"countries":["PL"],"is_corresponding":false,"raw_author_name":"Krzysztof G\u00f3recki","raw_affiliation_strings":["Department of Power Electronics, Gdynia Maritime University, Gdynia, Poland"],"raw_orcid":"https://orcid.org/0000-0002-9857-8235","affiliations":[{"raw_affiliation_string":"Department of Power Electronics, Gdynia Maritime University, Gdynia, Poland","institution_ids":["https://openalex.org/I4210125238"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5003624399","display_name":"Jacek R\u0105bkowski","orcid":"https://orcid.org/0000-0001-8857-3505"},"institutions":[{"id":"https://openalex.org/I108403487","display_name":"Warsaw University of Technology","ror":"https://ror.org/00y0xnp53","country_code":"PL","type":"education","lineage":["https://openalex.org/I108403487"]}],"countries":["PL"],"is_corresponding":false,"raw_author_name":"Jacek R\u0105bkowski","raw_affiliation_strings":["Institute of Control and Industrial Electronics, Warsaw University of Technology, Warsaw, Poland"],"raw_orcid":"https://orcid.org/0000-0001-8857-3505","affiliations":[{"raw_affiliation_string":"Institute of Control and Industrial Electronics, Warsaw University of Technology, Warsaw, Poland","institution_ids":["https://openalex.org/I108403487"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":2.2958,"has_fulltext":false,"cited_by_count":8,"citation_normalized_percentile":{"value":0.88080506,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":98,"max":99},"biblio":{"volume":"74","issue":null,"first_page":"1","last_page":"11"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.996999979019165,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9954000115394592,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.6447256803512573},{"id":"https://openalex.org/keywords/characterization","display_name":"Characterization (materials science)","score":0.5785009860992432},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5413562655448914},{"id":"https://openalex.org/keywords/thermal","display_name":"Thermal","score":0.5351451635360718},{"id":"https://openalex.org/keywords/energy","display_name":"Energy (signal processing)","score":0.4986283779144287},{"id":"https://openalex.org/keywords/power-semiconductor-device","display_name":"Power semiconductor device","score":0.48090481758117676},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.4783446490764618},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4574230909347534},{"id":"https://openalex.org/keywords/silicon-carbide","display_name":"Silicon carbide","score":0.41162770986557007},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.40550851821899414},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.38324809074401855},{"id":"https://openalex.org/keywords/engineering-physics","display_name":"Engineering physics","score":0.32047438621520996},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.27285099029541016},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.21183079481124878},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.19377726316452026},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.1095188558101654}],"concepts":[{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6447256803512573},{"id":"https://openalex.org/C2780841128","wikidata":"https://www.wikidata.org/wiki/Q5073781","display_name":"Characterization (materials science)","level":2,"score":0.5785009860992432},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5413562655448914},{"id":"https://openalex.org/C204530211","wikidata":"https://www.wikidata.org/wiki/Q752823","display_name":"Thermal","level":2,"score":0.5351451635360718},{"id":"https://openalex.org/C186370098","wikidata":"https://www.wikidata.org/wiki/Q442787","display_name":"Energy (signal processing)","level":2,"score":0.4986283779144287},{"id":"https://openalex.org/C129014197","wikidata":"https://www.wikidata.org/wiki/Q906544","display_name":"Power semiconductor device","level":3,"score":0.48090481758117676},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.4783446490764618},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4574230909347534},{"id":"https://openalex.org/C2780722187","wikidata":"https://www.wikidata.org/wiki/Q412356","display_name":"Silicon carbide","level":2,"score":0.41162770986557007},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.40550851821899414},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.38324809074401855},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.32047438621520996},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.27285099029541016},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.21183079481124878},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.19377726316452026},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.1095188558101654},{"id":"https://openalex.org/C153294291","wikidata":"https://www.wikidata.org/wiki/Q25261","display_name":"Meteorology","level":1,"score":0.0},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tim.2025.3555731","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tim.2025.3555731","pdf_url":null,"source":{"id":"https://openalex.org/S10892749","display_name":"IEEE Transactions on Instrumentation and Measurement","issn_l":"0018-9456","issn":["0018-9456","1557-9662"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Instrumentation and Measurement","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.8899999856948853}],"awards":[],"funders":[{"id":"https://openalex.org/F4320321042","display_name":"Fundacja na rzecz Nauki Polskiej","ror":"https://ror.org/048zd9m77"},{"id":"https://openalex.org/F4320321842","display_name":"Ministry of Education, Youth and Science","ror":"https://ror.org/053pcb396"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":30,"referenced_works":["https://openalex.org/W1989151762","https://openalex.org/W2026012753","https://openalex.org/W2029699094","https://openalex.org/W2055726983","https://openalex.org/W2163780765","https://openalex.org/W2171886847","https://openalex.org/W2407150599","https://openalex.org/W2482891568","https://openalex.org/W2577976329","https://openalex.org/W2578059947","https://openalex.org/W2611317458","https://openalex.org/W2613350384","https://openalex.org/W2769914472","https://openalex.org/W2948240928","https://openalex.org/W3025175526","https://openalex.org/W3026946294","https://openalex.org/W3034419295","https://openalex.org/W3101275295","https://openalex.org/W3213996536","https://openalex.org/W4200506907","https://openalex.org/W4293795379","https://openalex.org/W4313387421","https://openalex.org/W4366147746","https://openalex.org/W4382999321","https://openalex.org/W4386260265","https://openalex.org/W4388423427","https://openalex.org/W4388878347","https://openalex.org/W4396593756","https://openalex.org/W4400234782","https://openalex.org/W4404914710"],"related_works":["https://openalex.org/W1593023019","https://openalex.org/W2482113690","https://openalex.org/W2055119798","https://openalex.org/W2026900636","https://openalex.org/W2070842381","https://openalex.org/W2019344041","https://openalex.org/W1536131916","https://openalex.org/W2087143878","https://openalex.org/W2613569273","https://openalex.org/W2809961378"],"abstract_inverted_index":{"This":[0],"article":[1],"presents":[2],"a":[3,36],"new":[4],"method":[5,32,58,72,83],"for":[6,45],"measuring":[7],"the":[8,27,39,55,67,70,78,81],"switching":[9],"energies":[10],"of":[11,38,69,80],"discrete":[12,46],"silicon":[13],"carbide":[14],"(SiC)":[15],"power":[16],"transistors":[17],"based":[18,59],"on":[19,60],"an":[20],"increase":[21],"in":[22],"junction":[23],"temperature":[24],"caused":[25],"by":[26],"self-heating":[28],"effect.":[29],"The":[30],"proposed":[31,82],"is":[33],"introduced":[34],"with":[35,51],"description":[37],"necessary":[40],"measurement":[41],"setup.":[42],"Experimental":[43],"results":[44],"SiC":[47],"cascode":[48],"are":[49,73,84],"compared":[50],"those":[52],"obtained":[53],"using":[54],"standard":[56],"oscilloscope":[57,71],"fast":[61],"voltage":[62],"and":[63,86],"current":[64],"measurements.":[65],"Then,":[66],"limitations":[68],"discussed.":[74,87],"Moreover,":[75],"factors":[76],"influencing":[77],"accuracy":[79],"identified":[85]},"counts_by_year":[{"year":2026,"cited_by_count":3},{"year":2025,"cited_by_count":5}],"updated_date":"2026-08-11T07:18:39.950985","created_date":"2025-10-10T00:00:00"}