{"id":"https://openalex.org/W4389104583","doi":"https://doi.org/10.1109/tim.2023.3335518","title":"A Trap Characterization System for GaN HEMTs Based on Transient Drain Voltage","display_name":"A Trap Characterization System for GaN HEMTs Based on Transient Drain Voltage","publication_year":2023,"publication_date":"2023-11-28","ids":{"openalex":"https://openalex.org/W4389104583","doi":"https://doi.org/10.1109/tim.2023.3335518"},"language":"en","primary_location":{"id":"doi:10.1109/tim.2023.3335518","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tim.2023.3335518","pdf_url":null,"source":{"id":"https://openalex.org/S10892749","display_name":"IEEE Transactions on Instrumentation and Measurement","issn_l":"0018-9456","issn":["0018-9456","1557-9662"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Instrumentation and Measurement","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5083038796","display_name":"Shijie Pan","orcid":"https://orcid.org/0000-0002-0793-8806"},"institutions":[{"id":"https://openalex.org/I37796252","display_name":"Beijing University of Technology","ror":"https://ror.org/037b1pp87","country_code":"CN","type":"education","lineage":["https://openalex.org/I37796252"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Shijie Pan","raw_affiliation_strings":["Institute of Semiconductor Device Reliability Physics, Beijing University of Technology, Beijing, China"],"affiliations":[{"raw_affiliation_string":"Institute of Semiconductor Device Reliability Physics, Beijing University of Technology, Beijing, China","institution_ids":["https://openalex.org/I37796252"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5014652585","display_name":"Shiwei Feng","orcid":"https://orcid.org/0000-0001-9038-8309"},"institutions":[{"id":"https://openalex.org/I37796252","display_name":"Beijing University of Technology","ror":"https://ror.org/037b1pp87","country_code":"CN","type":"education","lineage":["https://openalex.org/I37796252"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Shiwei Feng","raw_affiliation_strings":["Institute of Semiconductor Device Reliability Physics, Beijing University of Technology, Beijing, China"],"affiliations":[{"raw_affiliation_string":"Institute of Semiconductor Device Reliability Physics, Beijing University of Technology, Beijing, China","institution_ids":["https://openalex.org/I37796252"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100362317","display_name":"Xuan Li","orcid":"https://orcid.org/0000-0002-6552-269X"},"institutions":[{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]},{"id":"https://openalex.org/I37796252","display_name":"Beijing University of Technology","ror":"https://ror.org/037b1pp87","country_code":"CN","type":"education","lineage":["https://openalex.org/I37796252"]},{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"funder","lineage":["https://openalex.org/I19820366"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xuan Li","raw_affiliation_strings":["Institute of Semiconductor Device Reliability Physics, Beijing University of Technology, Beijing, China","Institute of Microelectronics of the Chinese Academy of Sciences, Beijing, China"],"affiliations":[{"raw_affiliation_string":"Institute of Semiconductor Device Reliability Physics, Beijing University of Technology, Beijing, China","institution_ids":["https://openalex.org/I37796252"]},{"raw_affiliation_string":"Institute of Microelectronics of the Chinese Academy of Sciences, Beijing, China","institution_ids":["https://openalex.org/I4210119392","https://openalex.org/I19820366"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5064545015","display_name":"Kun Bai","orcid":"https://orcid.org/0000-0002-2251-8623"},"institutions":[{"id":"https://openalex.org/I37796252","display_name":"Beijing University of Technology","ror":"https://ror.org/037b1pp87","country_code":"CN","type":"education","lineage":["https://openalex.org/I37796252"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Kun Bai","raw_affiliation_strings":["Institute of Semiconductor Device Reliability Physics, Beijing University of Technology, Beijing, China"],"affiliations":[{"raw_affiliation_string":"Institute of Semiconductor Device Reliability Physics, Beijing University of Technology, Beijing, China","institution_ids":["https://openalex.org/I37796252"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5079663284","display_name":"Xiaozhuang Lu","orcid":"https://orcid.org/0000-0003-2922-0165"},"institutions":[{"id":"https://openalex.org/I37796252","display_name":"Beijing University of Technology","ror":"https://ror.org/037b1pp87","country_code":"CN","type":"education","lineage":["https://openalex.org/I37796252"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xiaozhuang Lu","raw_affiliation_strings":["Institute of Semiconductor Device Reliability Physics, Beijing University of Technology, Beijing, China"],"affiliations":[{"raw_affiliation_string":"Institute of Semiconductor Device Reliability Physics, Beijing University of Technology, Beijing, China","institution_ids":["https://openalex.org/I37796252"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5033697778","display_name":"Xiang Zheng","orcid":"https://orcid.org/0000-0003-4288-1865"},"institutions":[{"id":"https://openalex.org/I37796252","display_name":"Beijing University of Technology","ror":"https://ror.org/037b1pp87","country_code":"CN","type":"education","lineage":["https://openalex.org/I37796252"]},{"id":"https://openalex.org/I36234482","display_name":"University of Bristol","ror":"https://ror.org/0524sp257","country_code":"GB","type":"education","lineage":["https://openalex.org/I36234482"]}],"countries":["CN","GB"],"is_corresponding":false,"raw_author_name":"Xiang Zheng","raw_affiliation_strings":["Institute of Semiconductor Device Reliability Physics, Beijing University of Technology, Beijing, China","Center for Device Thermography and Reliability, University of Bristol, Bristol, U.K"],"affiliations":[{"raw_affiliation_string":"Institute of Semiconductor Device Reliability Physics, Beijing University of Technology, Beijing, China","institution_ids":["https://openalex.org/I37796252"]},{"raw_affiliation_string":"Center for Device Thermography and Reliability, University of Bristol, Bristol, U.K","institution_ids":["https://openalex.org/I36234482"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5035802345","display_name":"Z.C. Feng","orcid":"https://orcid.org/0009-0009-9305-991X"},"institutions":[{"id":"https://openalex.org/I37796252","display_name":"Beijing University of Technology","ror":"https://ror.org/037b1pp87","country_code":"CN","type":"education","lineage":["https://openalex.org/I37796252"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zixuan Feng","raw_affiliation_strings":["Institute of Semiconductor Device Reliability Physics, Beijing University of Technology, Beijing, China"],"affiliations":[{"raw_affiliation_string":"Institute of Semiconductor Device Reliability Physics, Beijing University of Technology, Beijing, China","institution_ids":["https://openalex.org/I37796252"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100724532","display_name":"Yamin Zhang","orcid":"https://orcid.org/0000-0001-5001-4329"},"institutions":[{"id":"https://openalex.org/I37796252","display_name":"Beijing University of Technology","ror":"https://ror.org/037b1pp87","country_code":"CN","type":"education","lineage":["https://openalex.org/I37796252"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yamin Zhang","raw_affiliation_strings":["Institute of Semiconductor Device Reliability Physics, Beijing University of Technology, Beijing, China"],"affiliations":[{"raw_affiliation_string":"Institute of Semiconductor Device Reliability Physics, Beijing University of Technology, Beijing, China","institution_ids":["https://openalex.org/I37796252"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":8,"corresponding_author_ids":["https://openalex.org/A5083038796"],"corresponding_institution_ids":["https://openalex.org/I37796252"],"apc_list":null,"apc_paid":null,"fwci":0.8033,"has_fulltext":false,"cited_by_count":6,"citation_normalized_percentile":{"value":0.72742783,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":97,"max":99},"biblio":{"volume":"73","issue":null,"first_page":"1","last_page":"12"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/transient","display_name":"Transient (computer programming)","score":0.7375330924987793},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6730080246925354},{"id":"https://openalex.org/keywords/characterization","display_name":"Characterization (materials science)","score":0.6520990133285522},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5860018730163574},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5574042201042175},{"id":"https://openalex.org/keywords/trap","display_name":"Trap (plumbing)","score":0.5531505346298218},{"id":"https://openalex.org/keywords/time-constant","display_name":"Time constant","score":0.5446247458457947},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5247374176979065},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.5006992816925049},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.46656739711761475},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.446937620639801},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.44158387184143066},{"id":"https://openalex.org/keywords/deconvolution","display_name":"Deconvolution","score":0.4113196134567261},{"id":"https://openalex.org/keywords/trapping","display_name":"Trapping","score":0.41089847683906555},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.32403233647346497},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2697332501411438},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.25666821002960205},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1809348165988922},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.12349620461463928},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.11722400784492493},{"id":"https://openalex.org/keywords/algorithm","display_name":"Algorithm","score":0.08651778101921082}],"concepts":[{"id":"https://openalex.org/C2780799671","wikidata":"https://www.wikidata.org/wiki/Q17087362","display_name":"Transient (computer programming)","level":2,"score":0.7375330924987793},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6730080246925354},{"id":"https://openalex.org/C2780841128","wikidata":"https://www.wikidata.org/wiki/Q5073781","display_name":"Characterization (materials science)","level":2,"score":0.6520990133285522},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5860018730163574},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5574042201042175},{"id":"https://openalex.org/C121099081","wikidata":"https://www.wikidata.org/wiki/Q665580","display_name":"Trap (plumbing)","level":2,"score":0.5531505346298218},{"id":"https://openalex.org/C81370116","wikidata":"https://www.wikidata.org/wiki/Q1335249","display_name":"Time constant","level":2,"score":0.5446247458457947},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5247374176979065},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.5006992816925049},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.46656739711761475},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.446937620639801},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.44158387184143066},{"id":"https://openalex.org/C174576160","wikidata":"https://www.wikidata.org/wiki/Q1183700","display_name":"Deconvolution","level":2,"score":0.4113196134567261},{"id":"https://openalex.org/C2777924906","wikidata":"https://www.wikidata.org/wiki/Q34168","display_name":"Trapping","level":2,"score":0.41089847683906555},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.32403233647346497},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2697332501411438},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.25666821002960205},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1809348165988922},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.12349620461463928},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.11722400784492493},{"id":"https://openalex.org/C11413529","wikidata":"https://www.wikidata.org/wiki/Q8366","display_name":"Algorithm","level":1,"score":0.08651778101921082},{"id":"https://openalex.org/C87717796","wikidata":"https://www.wikidata.org/wiki/Q146326","display_name":"Environmental engineering","level":1,"score":0.0},{"id":"https://openalex.org/C86803240","wikidata":"https://www.wikidata.org/wiki/Q420","display_name":"Biology","level":0,"score":0.0},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C18903297","wikidata":"https://www.wikidata.org/wiki/Q7150","display_name":"Ecology","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tim.2023.3335518","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tim.2023.3335518","pdf_url":null,"source":{"id":"https://openalex.org/S10892749","display_name":"IEEE Transactions on Instrumentation and Measurement","issn_l":"0018-9456","issn":["0018-9456","1557-9662"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Instrumentation and Measurement","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.8999999761581421}],"awards":[{"id":"https://openalex.org/G1459147890","display_name":null,"funder_award_id":"61974007","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G2657302086","display_name":null,"funder_award_id":"KZ202110005001","funder_id":"https://openalex.org/F4320321793","funder_display_name":"Beijing Municipal Education Commission"}],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"},{"id":"https://openalex.org/F4320321793","display_name":"Beijing Municipal Education Commission","ror":"https://ror.org/04bpn6s66"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":49,"referenced_works":["https://openalex.org/W1154314721","https://openalex.org/W1791151313","https://openalex.org/W1971489179","https://openalex.org/W1977450210","https://openalex.org/W1981878219","https://openalex.org/W1985314676","https://openalex.org/W1986565942","https://openalex.org/W1994553873","https://openalex.org/W2001207918","https://openalex.org/W2008111642","https://openalex.org/W2018098302","https://openalex.org/W2025932389","https://openalex.org/W2038530704","https://openalex.org/W2041714088","https://openalex.org/W2053222432","https://openalex.org/W2073193954","https://openalex.org/W2075738218","https://openalex.org/W2092859471","https://openalex.org/W2103943288","https://openalex.org/W2111795236","https://openalex.org/W2123665191","https://openalex.org/W2128509057","https://openalex.org/W2140857768","https://openalex.org/W2313401306","https://openalex.org/W2461303486","https://openalex.org/W2518952755","https://openalex.org/W2542804323","https://openalex.org/W2544590933","https://openalex.org/W2589592487","https://openalex.org/W2808463436","https://openalex.org/W2899963823","https://openalex.org/W2909230005","https://openalex.org/W2913310560","https://openalex.org/W2998530328","https://openalex.org/W3012121438","https://openalex.org/W3016116764","https://openalex.org/W3109146000","https://openalex.org/W3138664994","https://openalex.org/W3196490554","https://openalex.org/W3202850529","https://openalex.org/W3210346211","https://openalex.org/W4281480893","https://openalex.org/W4288426060","https://openalex.org/W4304184482","https://openalex.org/W4319342015","https://openalex.org/W4319988670","https://openalex.org/W4324359166","https://openalex.org/W4364322810","https://openalex.org/W4382677747"],"related_works":["https://openalex.org/W4251527294","https://openalex.org/W3090782779","https://openalex.org/W4296701479","https://openalex.org/W3149087629","https://openalex.org/W4231036715","https://openalex.org/W2032074591","https://openalex.org/W1986156575","https://openalex.org/W4242983818","https://openalex.org/W2970288912","https://openalex.org/W1649552191"],"abstract_inverted_index":{"In":[0,91],"this":[1,183],"article,":[2],"a":[3],"trap":[4,72,77,96,112],"characterization":[5,144,176],"system":[6],"based":[7,61],"on":[8,62,132],"the":[9,17,30,34,40,50,63,71,76,94,98,111,117,139,142,156,164,172,192,197],"transient":[10,41],"drain":[11,42],"voltage":[12,43],"was":[13,67,107],"constructed":[14,165],"to":[15,69,103,109,116,137,154,189],"achieve":[16],"complete":[18],"measurement":[19,35,168],"and":[20,37,75,84,123,146,167,174,195],"analysis":[21],"of":[22,33,100,127,135,141,149,158,177,199],"traps":[23],"in":[24,49,182],"GaN":[25,51,118],"high-electron-mobility":[26],"transistors":[27],"(HEMTs).":[28],"Through":[29],"appropriate":[31],"design":[32],"circuit":[36],"acquisition":[38],"system,":[39,145],"variations":[44],"caused":[45],"by":[46],"trapping":[47,101],"behaviors":[48,102],"HEMTs":[52,119],"can":[53,87,170,185],"be":[54,88,186],"obtained.":[55],"A":[56],"time":[57,80],"constant":[58],"extraction":[59,73],"method":[60,180],"Bayesian":[64],"deconvolution":[65],"function":[66],"used":[68,153,181],"optimize":[70,196],"accuracy,":[74],"properties,":[78],"including":[79],"constant,":[81],"absolute":[82],"amplitudes,":[83],"energy":[85,128],"levels,":[86],"comprehensively":[89],"characterized.":[90],"combination":[92],"with":[93,120],"above":[95],"features,":[97],"response":[99],"various":[104],"bias":[105],"voltages":[106],"obtained":[108],"analyze":[110],"positions.":[113],"With":[114],"respect":[115],"different":[121],"processes":[122],"fabrications,":[124],"extensive":[125],"measurements":[126],"levels":[129],"were":[130,152],"performed":[131],"four":[133,147],"kinds":[134],"samples":[136],"confirm":[138],"validity":[140],"proposed":[143],"devices":[148],"each":[150],"kind":[151],"verify":[155],"repeatability":[157],"experimental":[159],"results.":[160],"It":[161],"indicated":[162],"that":[163],"instrument":[166],"methods":[169],"realize":[171],"accurate":[173],"nondestructive":[175],"traps.":[178],"The":[179],"study":[184],"potentially":[187],"beneficial":[188],"better":[190],"understand":[191],"reliability":[193],"issues":[194],"performance":[198],"devices.":[200]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":5}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}