{"id":"https://openalex.org/W4319988670","doi":"https://doi.org/10.1109/tim.2023.3239625","title":"Research on Transient Temperature Rise Measurement Method for Semiconductor Devices Based on Photothermal Reflection","display_name":"Research on Transient Temperature Rise Measurement Method for Semiconductor Devices Based on Photothermal Reflection","publication_year":2023,"publication_date":"2023-01-01","ids":{"openalex":"https://openalex.org/W4319988670","doi":"https://doi.org/10.1109/tim.2023.3239625"},"language":"en","primary_location":{"id":"doi:10.1109/tim.2023.3239625","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tim.2023.3239625","pdf_url":null,"source":{"id":"https://openalex.org/S10892749","display_name":"IEEE Transactions on Instrumentation and Measurement","issn_l":"0018-9456","issn":["0018-9456","1557-9662"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Instrumentation and Measurement","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5019151805","display_name":"Xianwei Meng","orcid":"https://orcid.org/0000-0002-2899-2932"},"institutions":[{"id":"https://openalex.org/I37796252","display_name":"Beijing University of Technology","ror":"https://ror.org/037b1pp87","country_code":"CN","type":"education","lineage":["https://openalex.org/I37796252"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Xianwei Meng","raw_affiliation_strings":["Institute of Semiconductor Device Reliability Physics, Beijing University of Technology, Beijing, China"],"affiliations":[{"raw_affiliation_string":"Institute of Semiconductor Device Reliability Physics, Beijing University of Technology, Beijing, China","institution_ids":["https://openalex.org/I37796252"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100437706","display_name":"Meng Zhang","orcid":"https://orcid.org/0000-0001-9868-6431"},"institutions":[{"id":"https://openalex.org/I37796252","display_name":"Beijing University of Technology","ror":"https://ror.org/037b1pp87","country_code":"CN","type":"education","lineage":["https://openalex.org/I37796252"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Meng Zhang","raw_affiliation_strings":["Institute of Semiconductor Device Reliability Physics, Beijing University of Technology, Beijing, China"],"affiliations":[{"raw_affiliation_string":"Institute of Semiconductor Device Reliability Physics, Beijing University of Technology, Beijing, China","institution_ids":["https://openalex.org/I37796252"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5059247725","display_name":"Kun Duan","orcid":"https://orcid.org/0000-0002-9072-9203"},"institutions":[{"id":"https://openalex.org/I37796252","display_name":"Beijing University of Technology","ror":"https://ror.org/037b1pp87","country_code":"CN","type":"education","lineage":["https://openalex.org/I37796252"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Kun Duan","raw_affiliation_strings":["Institute of Semiconductor Device Reliability Physics, Beijing University of Technology, Beijing, China"],"affiliations":[{"raw_affiliation_string":"Institute of Semiconductor Device Reliability Physics, Beijing University of Technology, Beijing, China","institution_ids":["https://openalex.org/I37796252"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5033697778","display_name":"Xiang Zheng","orcid":"https://orcid.org/0000-0003-4288-1865"},"institutions":[{"id":"https://openalex.org/I36234482","display_name":"University of Bristol","ror":"https://ror.org/0524sp257","country_code":"GB","type":"education","lineage":["https://openalex.org/I36234482"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"Xiang Zheng","raw_affiliation_strings":["Center for Device Thermography and Reliability, University of Bristol, Bristol, U.K"],"affiliations":[{"raw_affiliation_string":"Center for Device Thermography and Reliability, University of Bristol, Bristol, U.K","institution_ids":["https://openalex.org/I36234482"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5049495877","display_name":"Yuwei Zhai","orcid":"https://orcid.org/0000-0003-4899-1651"},"institutions":[{"id":"https://openalex.org/I4210160974","display_name":"Hebei Semiconductor Research Institute","ror":"https://ror.org/050777m95","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210160974"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yuwei Zhai","raw_affiliation_strings":["Metrology and Maintenance Department, Hebei Semiconductor Research Institute, Shijiazhuang, China"],"affiliations":[{"raw_affiliation_string":"Metrology and Maintenance Department, Hebei Semiconductor Research Institute, Shijiazhuang, China","institution_ids":["https://openalex.org/I4210160974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5014652585","display_name":"Shiwei Feng","orcid":"https://orcid.org/0000-0001-9038-8309"},"institutions":[{"id":"https://openalex.org/I37796252","display_name":"Beijing University of Technology","ror":"https://ror.org/037b1pp87","country_code":"CN","type":"education","lineage":["https://openalex.org/I37796252"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Shiwei Feng","raw_affiliation_strings":["Institute of Semiconductor Device Reliability Physics, Beijing University of Technology, Beijing, China"],"affiliations":[{"raw_affiliation_string":"Institute of Semiconductor Device Reliability Physics, Beijing University of Technology, Beijing, China","institution_ids":["https://openalex.org/I37796252"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100724532","display_name":"Yamin Zhang","orcid":"https://orcid.org/0000-0001-5001-4329"},"institutions":[{"id":"https://openalex.org/I37796252","display_name":"Beijing University of Technology","ror":"https://ror.org/037b1pp87","country_code":"CN","type":"education","lineage":["https://openalex.org/I37796252"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yamin Zhang","raw_affiliation_strings":["Institute of Semiconductor Device Reliability Physics, Beijing University of Technology, Beijing, China"],"affiliations":[{"raw_affiliation_string":"Institute of Semiconductor Device Reliability Physics, Beijing University of Technology, Beijing, China","institution_ids":["https://openalex.org/I37796252"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":7,"corresponding_author_ids":["https://openalex.org/A5019151805"],"corresponding_institution_ids":["https://openalex.org/I37796252"],"apc_list":null,"apc_paid":null,"fwci":2.3041,"has_fulltext":false,"cited_by_count":12,"citation_normalized_percentile":{"value":0.8788907,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":94,"max":99},"biblio":{"volume":"72","issue":null,"first_page":"1","last_page":"9"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.998199999332428,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11277","display_name":"Thermal properties of materials","score":0.9958999752998352,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7794731855392456},{"id":"https://openalex.org/keywords/temperature-measurement","display_name":"Temperature measurement","score":0.6388739943504333},{"id":"https://openalex.org/keywords/transient","display_name":"Transient (computer programming)","score":0.5547689199447632},{"id":"https://openalex.org/keywords/thermal-resistance","display_name":"Thermal resistance","score":0.5143731832504272},{"id":"https://openalex.org/keywords/transient-response","display_name":"Transient response","score":0.5098106265068054},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5027439594268799},{"id":"https://openalex.org/keywords/junction-temperature","display_name":"Junction temperature","score":0.48784637451171875},{"id":"https://openalex.org/keywords/reflection","display_name":"Reflection (computer programming)","score":0.41794782876968384},{"id":"https://openalex.org/keywords/thermal","display_name":"Thermal","score":0.35829341411590576},{"id":"https://openalex.org/keywords/optics","display_name":"Optics","score":0.35026705265045166},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3304089605808258},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.1530829668045044},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.12007001042366028},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.10596489906311035}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7794731855392456},{"id":"https://openalex.org/C72293138","wikidata":"https://www.wikidata.org/wiki/Q909741","display_name":"Temperature measurement","level":2,"score":0.6388739943504333},{"id":"https://openalex.org/C2780799671","wikidata":"https://www.wikidata.org/wiki/Q17087362","display_name":"Transient (computer programming)","level":2,"score":0.5547689199447632},{"id":"https://openalex.org/C137693562","wikidata":"https://www.wikidata.org/wiki/Q899628","display_name":"Thermal resistance","level":3,"score":0.5143731832504272},{"id":"https://openalex.org/C85761212","wikidata":"https://www.wikidata.org/wiki/Q1974593","display_name":"Transient response","level":2,"score":0.5098106265068054},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5027439594268799},{"id":"https://openalex.org/C167781694","wikidata":"https://www.wikidata.org/wiki/Q6311800","display_name":"Junction temperature","level":3,"score":0.48784637451171875},{"id":"https://openalex.org/C65682993","wikidata":"https://www.wikidata.org/wiki/Q1056451","display_name":"Reflection (computer programming)","level":2,"score":0.41794782876968384},{"id":"https://openalex.org/C204530211","wikidata":"https://www.wikidata.org/wiki/Q752823","display_name":"Thermal","level":2,"score":0.35829341411590576},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.35026705265045166},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3304089605808258},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.1530829668045044},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.12007001042366028},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.10596489906311035},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0},{"id":"https://openalex.org/C153294291","wikidata":"https://www.wikidata.org/wiki/Q25261","display_name":"Meteorology","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tim.2023.3239625","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tim.2023.3239625","pdf_url":null,"source":{"id":"https://openalex.org/S10892749","display_name":"IEEE Transactions on Instrumentation and Measurement","issn_l":"0018-9456","issn":["0018-9456","1557-9662"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Instrumentation and Measurement","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.7300000190734863}],"awards":[{"id":"https://openalex.org/G4475083078","display_name":null,"funder_award_id":"61804006","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G6836631133","display_name":null,"funder_award_id":"4192012","funder_id":"https://openalex.org/F4320322919","funder_display_name":"Natural Science Foundation of Beijing Municipality"},{"id":"https://openalex.org/G6998826950","display_name":null,"funder_award_id":"62074009","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G7172358985","display_name":null,"funder_award_id":"4222083","funder_id":"https://openalex.org/F4320322919","funder_display_name":"Natural Science Foundation of Beijing Municipality"},{"id":"https://openalex.org/G8950210697","display_name":null,"funder_award_id":"2022YFB3604300","funder_id":"https://openalex.org/F4320335777","funder_display_name":"National Key Research and Development Program of China"}],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"},{"id":"https://openalex.org/F4320322919","display_name":"Natural Science Foundation of Beijing Municipality","ror":null},{"id":"https://openalex.org/F4320335777","display_name":"National Key Research and Development Program of China","ror":null}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":32,"referenced_works":["https://openalex.org/W1531948187","https://openalex.org/W1791151313","https://openalex.org/W1969018186","https://openalex.org/W2075066821","https://openalex.org/W2120697755","https://openalex.org/W2125078061","https://openalex.org/W2140824929","https://openalex.org/W2222835769","https://openalex.org/W2598908486","https://openalex.org/W2612683543","https://openalex.org/W2752905841","https://openalex.org/W2798656660","https://openalex.org/W2806747913","https://openalex.org/W2885943590","https://openalex.org/W2894626005","https://openalex.org/W2902981228","https://openalex.org/W2909888246","https://openalex.org/W2912032346","https://openalex.org/W2922111923","https://openalex.org/W2953647000","https://openalex.org/W2995571162","https://openalex.org/W2999187754","https://openalex.org/W3004638337","https://openalex.org/W3023086044","https://openalex.org/W3040691517","https://openalex.org/W3045483521","https://openalex.org/W3092007399","https://openalex.org/W3098778410","https://openalex.org/W3108707967","https://openalex.org/W4221086988","https://openalex.org/W4311861715","https://openalex.org/W6680829993"],"related_works":["https://openalex.org/W2160519523","https://openalex.org/W2548839566","https://openalex.org/W2241736443","https://openalex.org/W2605847106","https://openalex.org/W3009220070","https://openalex.org/W2387329802","https://openalex.org/W3215942247","https://openalex.org/W2591735537","https://openalex.org/W1988915862","https://openalex.org/W4283754245"],"abstract_inverted_index":{"In":[0,62],"this":[1],"article,":[2],"a":[3,24],"transient":[4,51,71],"temperature":[5,32,52,72,93,116,149],"rise":[6,53,73],"measurement":[7,48],"method":[8,138,164],"for":[9,150],"semiconductor":[10],"devices":[11,59],"based":[12],"on":[13],"photothermal":[14],"reflection":[15,156],"is":[16,33,60,75,108,130],"proposed.":[17],"The":[18],"relationship":[19,113],"between":[20,114],"the":[21,30,36,40,44,50,70,78,85,92,104,111,115,119,125,133,147,153,162],"reflectivity":[22],"of":[23,39,49,55,91,99,152],"360":[25],"nm":[26],"laser":[27],"beam":[28],"and":[29,43,95,110,124,139],"device":[31,126],"studied.":[34],"Through":[35],"appropriate":[37],"design":[38],"optical":[41],"circuit":[42],"data":[45],"acquisition":[46],"system,":[47],"characteristics":[54,98,129,137],"GaN-based":[56],"microwave":[57],"power":[58],"realized.":[61],"combination":[63],"with":[64],"resistor-capacitor":[65],"network":[66],"impulse":[67],"response":[68],"theory,":[69],"curve":[74],"processed":[76],"using":[77],"Bayesian":[79],"iterative":[80],"deconvolution":[81],"method.":[82,157],"By":[83],"extracting":[84],"thermal":[86,96,141,155],"time":[87],"constant,":[88],"nondestructive":[89],"characterization":[90],"increase":[94],"resistance":[97],"each":[100],"material":[101],"layer":[102],"in":[103,118],"heat":[105,127],"flow":[106],"path":[107],"achieved,":[109],"complementary":[112],"change":[117],"active":[120],"region":[121],"during":[122],"heating":[123],"dissipation":[128],"verified.":[131],"Additionally,":[132],"forward":[134],"Schottky":[135],"junction":[136],"infrared":[140],"imaging":[142],"are":[143],"used":[144],"to":[145],"measure":[146],"channel":[148],"verification":[151],"proposed":[154,163],"These":[158],"measurements":[159],"indicate":[160],"that":[161],"can":[165],"provide":[166],"accurate":[167],"results.":[168]},"counts_by_year":[{"year":2025,"cited_by_count":7},{"year":2024,"cited_by_count":3},{"year":2023,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}