{"id":"https://openalex.org/W4317761510","doi":"https://doi.org/10.1109/tim.2023.3238755","title":"A Novel IGBT Junction Temperature Detection Based on High-Frequency Model of Inductor Element","display_name":"A Novel IGBT Junction Temperature Detection Based on High-Frequency Model of Inductor Element","publication_year":2023,"publication_date":"2023-01-01","ids":{"openalex":"https://openalex.org/W4317761510","doi":"https://doi.org/10.1109/tim.2023.3238755"},"language":"en","primary_location":{"id":"doi:10.1109/tim.2023.3238755","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tim.2023.3238755","pdf_url":null,"source":{"id":"https://openalex.org/S10892749","display_name":"IEEE Transactions on Instrumentation and Measurement","issn_l":"0018-9456","issn":["0018-9456","1557-9662"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Instrumentation and Measurement","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100736081","display_name":"Guoqing Xu","orcid":"https://orcid.org/0000-0002-3582-0856"},"institutions":[{"id":"https://openalex.org/I113940042","display_name":"Shanghai University","ror":"https://ror.org/006teas31","country_code":"CN","type":"education","lineage":["https://openalex.org/I113940042"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Guoqing Xu","raw_affiliation_strings":["School of Mechatronic Engineering and Automation, Shanghai University, Shanghai, China"],"raw_orcid":"https://orcid.org/0000-0002-3582-0856","affiliations":[{"raw_affiliation_string":"School of Mechatronic Engineering and Automation, Shanghai University, Shanghai, China","institution_ids":["https://openalex.org/I113940042"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5001160242","display_name":"Lingfeng Shao","orcid":"https://orcid.org/0000-0001-6744-8844"},"institutions":[{"id":"https://openalex.org/I113940042","display_name":"Shanghai University","ror":"https://ror.org/006teas31","country_code":"CN","type":"education","lineage":["https://openalex.org/I113940042"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Lingfeng Shao","raw_affiliation_strings":["School of Mechatronic Engineering and Automation, Shanghai University, Shanghai, China"],"raw_orcid":"https://orcid.org/0000-0001-6744-8844","affiliations":[{"raw_affiliation_string":"School of Mechatronic Engineering and Automation, Shanghai University, Shanghai, China","institution_ids":["https://openalex.org/I113940042"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5052037779","display_name":"Wei Feng","orcid":"https://orcid.org/0000-0002-9845-999X"},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210145761","display_name":"Shenzhen Institutes of Advanced Technology","ror":"https://ror.org/04gh4er46","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210145761"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Wei Feng","raw_affiliation_strings":["Shenzhen Institute of Advanced Studies, Chinese Academy of Sciences, Shenzhen, China"],"raw_orcid":"https://orcid.org/0000-0002-9845-999X","affiliations":[{"raw_affiliation_string":"Shenzhen Institute of Advanced Studies, Chinese Academy of Sciences, Shenzhen, China","institution_ids":["https://openalex.org/I4210145761","https://openalex.org/I19820366"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5043833318","display_name":"Wei Zhu","orcid":"https://orcid.org/0000-0001-8500-3961"},"institutions":[{"id":"https://openalex.org/I113940042","display_name":"Shanghai University","ror":"https://ror.org/006teas31","country_code":"CN","type":"education","lineage":["https://openalex.org/I113940042"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Wei Zhu","raw_affiliation_strings":["School of Mechatronic Engineering and Automation, Shanghai University, Shanghai, China"],"raw_orcid":"https://orcid.org/0000-0001-8500-3961","affiliations":[{"raw_affiliation_string":"School of Mechatronic Engineering and Automation, Shanghai University, Shanghai, China","institution_ids":["https://openalex.org/I113940042"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5080928952","display_name":"Zhengyun Pan","orcid":null},"institutions":[{"id":"https://openalex.org/I4210087322","display_name":"Hefei Design and Research Institute of Coal Industry (China)","ror":"https://ror.org/001h7kn14","country_code":"CN","type":"company","lineage":["https://openalex.org/I4210087322"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zhengyun Pan","raw_affiliation_strings":["Hefei Design and Research Institute of Coal Industry Co., Ltd, Hefei, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Hefei Design and Research Institute of Coal Industry Co., Ltd, Hefei, China","institution_ids":["https://openalex.org/I4210087322"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5032482853","display_name":"Changle Li","orcid":"https://orcid.org/0000-0002-0153-451X"},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210145761","display_name":"Shenzhen Institutes of Advanced Technology","ror":"https://ror.org/04gh4er46","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210145761"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Changle Li","raw_affiliation_strings":["Shenzhen Institute of Advanced Studies, Chinese Academy of Sciences, Shenzhen, China"],"raw_orcid":"https://orcid.org/0000-0002-0153-451X","affiliations":[{"raw_affiliation_string":"Shenzhen Institute of Advanced Studies, Chinese Academy of Sciences, Shenzhen, China","institution_ids":["https://openalex.org/I4210145761","https://openalex.org/I19820366"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5006527054","display_name":"Yanhui Zhang","orcid":"https://orcid.org/0000-0002-5545-6967"},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210145761","display_name":"Shenzhen Institutes of Advanced Technology","ror":"https://ror.org/04gh4er46","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210145761"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yanhui Zhang","raw_affiliation_strings":["Shenzhen Institute of Advanced Studies, Chinese Academy of Sciences, Shenzhen, China"],"raw_orcid":"https://orcid.org/0000-0002-5545-6967","affiliations":[{"raw_affiliation_string":"Shenzhen Institute of Advanced Studies, Chinese Academy of Sciences, Shenzhen, China","institution_ids":["https://openalex.org/I4210145761","https://openalex.org/I19820366"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5103180056","display_name":"Lei Xia","orcid":"https://orcid.org/0000-0003-2593-4267"},"institutions":[{"id":"https://openalex.org/I113940042","display_name":"Shanghai University","ror":"https://ror.org/006teas31","country_code":"CN","type":"education","lineage":["https://openalex.org/I113940042"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Lei Xia","raw_affiliation_strings":["School of Mechatronic Engineering and Automation, Shanghai University, Shanghai, China"],"raw_orcid":"https://orcid.org/0000-0003-2593-4267","affiliations":[{"raw_affiliation_string":"School of Mechatronic Engineering and Automation, Shanghai University, Shanghai, China","institution_ids":["https://openalex.org/I113940042"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":1.5098,"has_fulltext":false,"cited_by_count":13,"citation_normalized_percentile":{"value":0.81776103,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":98,"max":99},"biblio":{"volume":"72","issue":null,"first_page":"1","last_page":"10"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9984999895095825,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/insulated-gate-bipolar-transistor","display_name":"Insulated-gate bipolar transistor","score":0.7780976295471191},{"id":"https://openalex.org/keywords/junction-temperature","display_name":"Junction temperature","score":0.6135997772216797},{"id":"https://openalex.org/keywords/inductor","display_name":"Inductor","score":0.5312867760658264},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.462595134973526},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.4082115888595581},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.36327266693115234},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3267974257469177},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3222741186618805},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.32052528858184814},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.31928595900535583},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.25228366255760193},{"id":"https://openalex.org/keywords/quantum-mechanics","display_name":"Quantum mechanics","score":0.15754109621047974}],"concepts":[{"id":"https://openalex.org/C28285623","wikidata":"https://www.wikidata.org/wiki/Q176110","display_name":"Insulated-gate bipolar transistor","level":3,"score":0.7780976295471191},{"id":"https://openalex.org/C167781694","wikidata":"https://www.wikidata.org/wiki/Q6311800","display_name":"Junction temperature","level":3,"score":0.6135997772216797},{"id":"https://openalex.org/C144534570","wikidata":"https://www.wikidata.org/wiki/Q5325","display_name":"Inductor","level":3,"score":0.5312867760658264},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.462595134973526},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.4082115888595581},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.36327266693115234},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3267974257469177},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3222741186618805},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.32052528858184814},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.31928595900535583},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.25228366255760193},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.15754109621047974}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tim.2023.3238755","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tim.2023.3238755","pdf_url":null,"source":{"id":"https://openalex.org/S10892749","display_name":"IEEE Transactions on Instrumentation and Measurement","issn_l":"0018-9456","issn":["0018-9456","1557-9662"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Instrumentation and Measurement","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[{"id":"https://openalex.org/G1979021820","display_name":null,"funder_award_id":"2016YFB0100700","funder_id":"https://openalex.org/F4320335777","funder_display_name":"National Key Research and Development Program of China"}],"funders":[{"id":"https://openalex.org/F4320335777","display_name":"National Key Research and Development Program of China","ror":null}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":36,"referenced_works":["https://openalex.org/W1915959563","https://openalex.org/W1969760775","https://openalex.org/W1973466307","https://openalex.org/W2008706439","https://openalex.org/W2018534641","https://openalex.org/W2071760299","https://openalex.org/W2073386831","https://openalex.org/W2103854567","https://openalex.org/W2104903385","https://openalex.org/W2113001322","https://openalex.org/W2150763729","https://openalex.org/W2165356943","https://openalex.org/W2166086202","https://openalex.org/W2170470828","https://openalex.org/W2205144585","https://openalex.org/W2248408487","https://openalex.org/W2287880634","https://openalex.org/W2296114699","https://openalex.org/W2302561359","https://openalex.org/W2533083555","https://openalex.org/W2751664587","https://openalex.org/W2752107339","https://openalex.org/W2791900666","https://openalex.org/W2921711259","https://openalex.org/W2971173827","https://openalex.org/W3014732928","https://openalex.org/W3091852375","https://openalex.org/W3092427676","https://openalex.org/W3148115598","https://openalex.org/W3194879904","https://openalex.org/W3213658784","https://openalex.org/W4200190098","https://openalex.org/W4285195991","https://openalex.org/W6672445098","https://openalex.org/W6684139912","https://openalex.org/W6743746971"],"related_works":["https://openalex.org/W2941586664","https://openalex.org/W2026438159","https://openalex.org/W2952153532","https://openalex.org/W3211169310","https://openalex.org/W4285161724","https://openalex.org/W2973352049","https://openalex.org/W2894661039","https://openalex.org/W2995312372","https://openalex.org/W2587344013","https://openalex.org/W4386863821"],"abstract_inverted_index":{"Accurate":[0],"online":[1,52,184],"junction":[2,60,161,185],"temperature":[3,39,61,162,186],"detection":[4,62,163,187],"of":[5,20,46,69,78,96],"high-power":[6],"insulated":[7],"gate":[8],"bipolar":[9],"transistor":[10],"(IGBT)":[11],"modules":[12],"is":[13,36,45,72,88,101,118,168,180],"necessary":[14],"for":[15,49,155],"the":[16,65,75,79,83,93,97,114,121,127,147,153,183],"health":[17],"management":[18],"system":[19],"key":[21],"equipment.":[22],"The":[23,174],"voltage":[24,156],"rise":[25,157],"time":[26,158],"(":[27],"<inline-formula":[28,106,134],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[29,107,135],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">":[30,108,136],"<tex-math":[31,109,137],"notation=\"LaTeX\">$t_{\\mathrm":[32,110,138],"{rv}}$":[33,111,139],"</tex-math></inline-formula>":[34,112,140],")":[35],"a":[37,57],"good":[38],"sensitive":[40],"electrical":[41],"parameter":[42],"(TSEP),":[43],"which":[44],"great":[47],"significance":[48,192],"its":[50],"accurate":[51],"extraction.":[53],"In":[54],"this":[55,178],"article,":[56],"novel":[58],"IGBT":[59,115],"based":[63,91],"on":[64,92,126],"high-frequency":[66],"(HF)":[67],"model":[68,77,95],"inductor":[70,80,98,128],"element":[71,81,129],"proposed.":[73],"First,":[74],"equivalent":[76],"in":[82,113,177],"application":[84],"circuit":[85],"at":[86,130],"HF":[87,94,122,148,165],"demonstrated.":[89],"Second,":[90],"element,":[99],"it":[100],"proposed":[102],"and":[103,160,172,188,193],"verified":[104,169],"that":[105,132],"turn-off":[116],"process":[117],"consistent":[119],"with":[120],"current":[123,149],"pulse":[124,150],"signal":[125],"HF,":[131],"is,":[133],"can":[141],"be":[142],"indirectly":[143],"obtained":[144],"by":[145,170],"extracting":[146],"signal.":[151],"Finally,":[152],"feasibility":[154],"extraction":[159],"through":[164],"isolation":[166],"coil":[167],"experiments":[171],"simulations.":[173],"research":[175],"work":[176],"article":[179],"helpful":[181],"to":[182],"has":[189],"certain":[190],"theoretical":[191],"practical":[194],"engineering":[195],"value.":[196]},"counts_by_year":[{"year":2025,"cited_by_count":8},{"year":2024,"cited_by_count":5}],"updated_date":"2026-03-27T05:58:40.876381","created_date":"2025-10-10T00:00:00"}