{"id":"https://openalex.org/W2007692335","doi":"https://doi.org/10.1109/tim.2009.2022447","title":"A Very Low Offset Preamplifier for Voltage Measurements in the $\\mu\\hbox{V}$ Range","display_name":"A Very Low Offset Preamplifier for Voltage Measurements in the $\\mu\\hbox{V}$ Range","publication_year":2009,"publication_date":"2009-08-21","ids":{"openalex":"https://openalex.org/W2007692335","doi":"https://doi.org/10.1109/tim.2009.2022447","mag":"2007692335"},"language":"en","primary_location":{"id":"doi:10.1109/tim.2009.2022447","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tim.2009.2022447","pdf_url":null,"source":{"id":"https://openalex.org/S10892749","display_name":"IEEE Transactions on Instrumentation and Measurement","issn_l":"0018-9456","issn":["0018-9456","1557-9662"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Instrumentation and Measurement","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5033726034","display_name":"Rosario Merlino","orcid":null},"institutions":[{"id":"https://openalex.org/I112862951","display_name":"University of Messina","ror":"https://ror.org/05ctdxz19","country_code":"IT","type":"education","lineage":["https://openalex.org/I112862951"]}],"countries":["IT"],"is_corresponding":true,"raw_author_name":"R. Merlino","raw_affiliation_strings":["Dipartimento di Fisica della Materia e Ingegneria Elettronica, Universit\u00e0 di Messina, Messina, Italy","Dipt. di Fis. della Materia e Ing. Elettron., Univ. di Messina, Messina, Italy"],"affiliations":[{"raw_affiliation_string":"Dipartimento di Fisica della Materia e Ingegneria Elettronica, Universit\u00e0 di Messina, Messina, Italy","institution_ids":["https://openalex.org/I112862951"]},{"raw_affiliation_string":"Dipt. di Fis. della Materia e Ing. Elettron., Univ. di Messina, Messina, Italy","institution_ids":["https://openalex.org/I112862951"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5044628397","display_name":"Graziella Scandurra","orcid":"https://orcid.org/0000-0003-3295-0206"},"institutions":[{"id":"https://openalex.org/I112862951","display_name":"University of Messina","ror":"https://ror.org/05ctdxz19","country_code":"IT","type":"education","lineage":["https://openalex.org/I112862951"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"G. Scandurra","raw_affiliation_strings":["Dipartimento di Fisica della Materia e Ingegneria Elettronica, Universit\u00e0 di Messina, Messina, Italy","Dipt. di Fis. della Materia e Ing. Elettron., Univ. di Messina, Messina, Italy"],"affiliations":[{"raw_affiliation_string":"Dipartimento di Fisica della Materia e Ingegneria Elettronica, Universit\u00e0 di Messina, Messina, Italy","institution_ids":["https://openalex.org/I112862951"]},{"raw_affiliation_string":"Dipt. di Fis. della Materia e Ing. Elettron., Univ. di Messina, Messina, Italy","institution_ids":["https://openalex.org/I112862951"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5009391545","display_name":"C. Ciofi","orcid":"https://orcid.org/0000-0002-2555-833X"},"institutions":[{"id":"https://openalex.org/I112862951","display_name":"University of Messina","ror":"https://ror.org/05ctdxz19","country_code":"IT","type":"education","lineage":["https://openalex.org/I112862951"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"C. Ciofi","raw_affiliation_strings":["Dipartimento di Fisica della Materia e Ingegneria Elettronica, Universit\u00e0 di Messina, Messina, Italy","Dipt. di Fis. della Materia e Ing. Elettron., Univ. di Messina, Messina, Italy"],"affiliations":[{"raw_affiliation_string":"Dipartimento di Fisica della Materia e Ingegneria Elettronica, Universit\u00e0 di Messina, Messina, Italy","institution_ids":["https://openalex.org/I112862951"]},{"raw_affiliation_string":"Dipt. di Fis. della Materia e Ing. Elettron., Univ. di Messina, Messina, Italy","institution_ids":["https://openalex.org/I112862951"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5033726034"],"corresponding_institution_ids":["https://openalex.org/I112862951"],"apc_list":null,"apc_paid":null,"fwci":0.2223,"has_fulltext":false,"cited_by_count":5,"citation_normalized_percentile":{"value":0.57935183,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":"59","issue":"1","first_page":"188","last_page":"194"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9983999729156494,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/preamplifier","display_name":"Preamplifier","score":0.9023716449737549},{"id":"https://openalex.org/keywords/input-offset-voltage","display_name":"Input offset voltage","score":0.843545138835907},{"id":"https://openalex.org/keywords/offset","display_name":"Offset (computer science)","score":0.5874934196472168},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.579226553440094},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5076457262039185},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5008842945098877},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.4797459840774536},{"id":"https://openalex.org/keywords/operational-amplifier","display_name":"Operational amplifier","score":0.4741848409175873},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4346201717853546},{"id":"https://openalex.org/keywords/dc-bias","display_name":"DC bias","score":0.42846667766571045},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.3881019949913025},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.36585575342178345},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.3319774270057678},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3252795934677124},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.26033860445022583}],"concepts":[{"id":"https://openalex.org/C14245642","wikidata":"https://www.wikidata.org/wiki/Q399804","display_name":"Preamplifier","level":4,"score":0.9023716449737549},{"id":"https://openalex.org/C63651839","wikidata":"https://www.wikidata.org/wiki/Q478566","display_name":"Input offset voltage","level":5,"score":0.843545138835907},{"id":"https://openalex.org/C175291020","wikidata":"https://www.wikidata.org/wiki/Q1156822","display_name":"Offset (computer science)","level":2,"score":0.5874934196472168},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.579226553440094},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5076457262039185},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5008842945098877},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.4797459840774536},{"id":"https://openalex.org/C145366948","wikidata":"https://www.wikidata.org/wiki/Q178947","display_name":"Operational amplifier","level":4,"score":0.4741848409175873},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4346201717853546},{"id":"https://openalex.org/C88682704","wikidata":"https://www.wikidata.org/wiki/Q2907415","display_name":"DC bias","level":3,"score":0.42846667766571045},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.3881019949913025},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.36585575342178345},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.3319774270057678},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3252795934677124},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.26033860445022583},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tim.2009.2022447","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tim.2009.2022447","pdf_url":null,"source":{"id":"https://openalex.org/S10892749","display_name":"IEEE Transactions on Instrumentation and Measurement","issn_l":"0018-9456","issn":["0018-9456","1557-9662"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Instrumentation and Measurement","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.7099999785423279}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":5,"referenced_works":["https://openalex.org/W1968911797","https://openalex.org/W2104609839","https://openalex.org/W2107978821","https://openalex.org/W2127187723","https://openalex.org/W2155946010"],"related_works":["https://openalex.org/W1560414352","https://openalex.org/W1974451968","https://openalex.org/W4379054063","https://openalex.org/W4361800525","https://openalex.org/W1971997791","https://openalex.org/W1596270481","https://openalex.org/W2060384436","https://openalex.org/W2889361259","https://openalex.org/W2115447424","https://openalex.org/W2594925873"],"abstract_inverted_index":{"A":[0],"new":[1,16,132],"topology":[2,17],"for":[3,25,47],"the":[4,27,32,50,65,70,73,81,87,97,102,105,113,117,120,123,131,187,195],"implementation":[5],"of":[6,31,36,55,64,116,122,156,167,186],"a":[7,19,23,41,56,143,152,161,165],"very":[8],"low":[9],"offset":[10,35,51,74,98,106,155,173],"voltage":[11,52,83,115,162,174],"preamplifier":[12,118,128,163],"is":[13,69,178,182],"presented.":[14],"The":[15,60],"employs":[18,197],"time-varying":[20],"resistance":[21],"as":[22,89],"probe":[24],"detecting":[26],"sign":[28],"and":[29,45,92,139,169,202],"magnitude":[30,93],"equivalent":[33,171],"input":[34,148,154,172],"an":[37,170],"operational":[38,149],"amplifier":[39,150],"in":[40,119],"series-shunt":[42],"feedback":[43],"configuration":[44],"allows":[46],"continuously":[48,77],"correcting":[49],"by":[53,184,191],"means":[54],"proper":[57],"control":[58],"feedback.":[59],"most":[61],"remarkable":[62],"feature":[63],"approach":[66,133],"we":[67,134],"propose":[68,135],"fact":[71],"that":[72],"correction":[75],"can":[76],"be":[78],"performed":[79],"with":[80,151,164],"signal":[82],"source":[84],"connected":[85],"to":[86],"circuit,":[88],"its":[90],"presence":[91],"do":[94],"not":[95,204],"affect":[96],"detection":[99],"circuit.":[100],"At":[101],"same":[103],"time,":[104],"cancellation":[107],"circuit":[108],"has":[109,136],"minimum":[110],"effect":[111],"on":[112,130],"output":[114],"bandwidth":[121],"signal.":[124],"An":[125],"actual":[126],"low-offset":[127],"based":[129],"been":[137],"built":[138],"tested.":[140],"While":[141,189],"employing":[142],"metal-oxide-semiconductor":[144],"field-effect":[145],"transistor":[146],"(MOSFET)":[147],"typical":[153],"100":[157,176],"\u03bcV":[158],"(600-\u03bcV":[159],"maximum),":[160],"gain":[166],"201":[168],"below":[175],"nV":[177],"consistently":[179],"obtained,":[180],"which":[181],"independent,":[183],"design,":[185],"temperature.":[188],"characterized":[190],"these":[192],"excellent":[193],"performances,":[194],"system":[196],"quite":[198],"standard":[199],"low-cost":[200],"components":[201],"does":[203],"require":[205],"any":[206],"calibration":[207],"procedure.":[208]},"counts_by_year":[{"year":2023,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2013,"cited_by_count":1},{"year":2012,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}