{"id":"https://openalex.org/W4410859031","doi":"https://doi.org/10.1109/tie.2025.3566765","title":"Active Gate Driver of SiC MOSFETs for Crosstalk Mitigation Based on Voltage Inverters","display_name":"Active Gate Driver of SiC MOSFETs for Crosstalk Mitigation Based on Voltage Inverters","publication_year":2025,"publication_date":"2025-05-29","ids":{"openalex":"https://openalex.org/W4410859031","doi":"https://doi.org/10.1109/tie.2025.3566765"},"language":"en","primary_location":{"id":"doi:10.1109/tie.2025.3566765","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tie.2025.3566765","pdf_url":null,"source":{"id":"https://openalex.org/S58031724","display_name":"IEEE Transactions on Industrial Electronics","issn_l":"0278-0046","issn":["0278-0046","1557-9948"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Industrial Electronics","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5065383037","display_name":"Hao Yue","orcid":"https://orcid.org/0009-0001-6160-2916"},"institutions":[{"id":"https://openalex.org/I4800084","display_name":"Southwest Jiaotong University","ror":"https://ror.org/00hn7w693","country_code":"CN","type":"education","lineage":["https://openalex.org/I4800084"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Hao Yue","raw_affiliation_strings":["School of Electrical Engineering, Southwest Jiaotong University, Chengdu, China"],"raw_orcid":"https://orcid.org/0009-0001-6160-2916","affiliations":[{"raw_affiliation_string":"School of Electrical Engineering, Southwest Jiaotong University, Chengdu, China","institution_ids":["https://openalex.org/I4800084"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5059349649","display_name":"Wensheng Song","orcid":"https://orcid.org/0000-0002-7447-0203"},"institutions":[{"id":"https://openalex.org/I4800084","display_name":"Southwest Jiaotong University","ror":"https://ror.org/00hn7w693","country_code":"CN","type":"education","lineage":["https://openalex.org/I4800084"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Wensheng Song","raw_affiliation_strings":["School of Integrated Circuit Science and Engineering, Southwest Jiaotong University, Chengdu, China"],"raw_orcid":"https://orcid.org/0000-0002-7447-0203","affiliations":[{"raw_affiliation_string":"School of Integrated Circuit Science and Engineering, Southwest Jiaotong University, Chengdu, China","institution_ids":["https://openalex.org/I4800084"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5061850565","display_name":"Jian Chen","orcid":"https://orcid.org/0000-0001-6046-1966"},"institutions":[{"id":"https://openalex.org/I4800084","display_name":"Southwest Jiaotong University","ror":"https://ror.org/00hn7w693","country_code":"CN","type":"education","lineage":["https://openalex.org/I4800084"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jian Chen","raw_affiliation_strings":["School of Integrated Circuit Science and Engineering, Southwest Jiaotong University, Chengdu, China"],"raw_orcid":"https://orcid.org/0000-0001-6046-1966","affiliations":[{"raw_affiliation_string":"School of Integrated Circuit Science and Engineering, Southwest Jiaotong University, Chengdu, China","institution_ids":["https://openalex.org/I4800084"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109245726","display_name":"Tingwen Hu","orcid":"https://orcid.org/0009-0008-0789-9481"},"institutions":[{"id":"https://openalex.org/I4800084","display_name":"Southwest Jiaotong University","ror":"https://ror.org/00hn7w693","country_code":"CN","type":"education","lineage":["https://openalex.org/I4800084"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Tingwen Hu","raw_affiliation_strings":["School of Electrical Engineering, Southwest Jiaotong University, Chengdu, China"],"raw_orcid":"https://orcid.org/0009-0008-0789-9481","affiliations":[{"raw_affiliation_string":"School of Electrical Engineering, Southwest Jiaotong University, Chengdu, China","institution_ids":["https://openalex.org/I4800084"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100603316","display_name":"Jiayao Li","orcid":"https://orcid.org/0000-0002-3814-2691"},"institutions":[{"id":"https://openalex.org/I4800084","display_name":"Southwest Jiaotong University","ror":"https://ror.org/00hn7w693","country_code":"CN","type":"education","lineage":["https://openalex.org/I4800084"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jiayao Li","raw_affiliation_strings":["School of Electrical Engineering, Southwest Jiaotong University, Chengdu, China"],"raw_orcid":"https://orcid.org/0000-0002-3814-2691","affiliations":[{"raw_affiliation_string":"School of Electrical Engineering, Southwest Jiaotong University, Chengdu, China","institution_ids":["https://openalex.org/I4800084"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5083032568","display_name":"Guoyou Liu","orcid":"https://orcid.org/0000-0002-0006-9302"},"institutions":[{"id":"https://openalex.org/I4800084","display_name":"Southwest Jiaotong University","ror":"https://ror.org/00hn7w693","country_code":"CN","type":"education","lineage":["https://openalex.org/I4800084"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Guoyou Liu","raw_affiliation_strings":["School of Integrated Circuit Science and Engineering, Southwest Jiaotong University, Chengdu, China"],"raw_orcid":"https://orcid.org/0000-0002-0006-9302","affiliations":[{"raw_affiliation_string":"School of Integrated Circuit Science and Engineering, Southwest Jiaotong University, Chengdu, China","institution_ids":["https://openalex.org/I4800084"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I4800084"],"apc_list":{"value":2645,"currency":"USD","value_usd":2645},"apc_paid":null,"fwci":1.1464,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.76306779,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":95,"max":98},"biblio":{"volume":"72","issue":"12","first_page":"12242","last_page":"12252"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9970999956130981,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9970999956130981,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9891999959945679,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":0.9878000020980835,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.61496502161026},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.602403998374939},{"id":"https://openalex.org/keywords/gate-driver","display_name":"Gate driver","score":0.57950359582901},{"id":"https://openalex.org/keywords/crosstalk","display_name":"Crosstalk","score":0.5738062262535095},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5174863338470459},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4948672652244568},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.478452205657959},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.4771394431591034},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.46632200479507446},{"id":"https://openalex.org/keywords/silicon-carbide","display_name":"Silicon carbide","score":0.43368491530418396},{"id":"https://openalex.org/keywords/gate-voltage","display_name":"Gate voltage","score":0.43273961544036865},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.24854379892349243},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.23305338621139526}],"concepts":[{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.61496502161026},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.602403998374939},{"id":"https://openalex.org/C179141203","wikidata":"https://www.wikidata.org/wiki/Q1495747","display_name":"Gate driver","level":3,"score":0.57950359582901},{"id":"https://openalex.org/C169822122","wikidata":"https://www.wikidata.org/wiki/Q230187","display_name":"Crosstalk","level":2,"score":0.5738062262535095},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5174863338470459},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4948672652244568},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.478452205657959},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.4771394431591034},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.46632200479507446},{"id":"https://openalex.org/C2780722187","wikidata":"https://www.wikidata.org/wiki/Q412356","display_name":"Silicon carbide","level":2,"score":0.43368491530418396},{"id":"https://openalex.org/C2984119601","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Gate voltage","level":4,"score":0.43273961544036865},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.24854379892349243},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.23305338621139526},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tie.2025.3566765","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tie.2025.3566765","pdf_url":null,"source":{"id":"https://openalex.org/S58031724","display_name":"IEEE Transactions on Industrial Electronics","issn_l":"0278-0046","issn":["0278-0046","1557-9948"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Industrial Electronics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[{"id":"https://openalex.org/G5639991010","display_name":null,"funder_award_id":"U2368206","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G6143714000","display_name":null,"funder_award_id":"U2469204","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G7430359958","display_name":null,"funder_award_id":"52307224","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"}],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":24,"referenced_works":["https://openalex.org/W1717891563","https://openalex.org/W2029699094","https://openalex.org/W2040861884","https://openalex.org/W2061792158","https://openalex.org/W2076838760","https://openalex.org/W2084443180","https://openalex.org/W2314592649","https://openalex.org/W2461936611","https://openalex.org/W2536756947","https://openalex.org/W2573837945","https://openalex.org/W2606886935","https://openalex.org/W2890106885","https://openalex.org/W2906839076","https://openalex.org/W2981318611","https://openalex.org/W3033887238","https://openalex.org/W3045969701","https://openalex.org/W3049212121","https://openalex.org/W3049646307","https://openalex.org/W3088029855","https://openalex.org/W3094784621","https://openalex.org/W3175600362","https://openalex.org/W3207834150","https://openalex.org/W4205153203","https://openalex.org/W4206840862"],"related_works":["https://openalex.org/W2966234605","https://openalex.org/W2589023056","https://openalex.org/W4200313463","https://openalex.org/W2785588703","https://openalex.org/W2909235899","https://openalex.org/W3096803661","https://openalex.org/W4393372121","https://openalex.org/W2051877389","https://openalex.org/W2186192482","https://openalex.org/W2285024480"],"abstract_inverted_index":{"SiC":[0,31,50,166],"MOSFETs":[1],"generally":[2],"suffer":[3],"more":[4],"severe":[5],"crosstalk":[6,17,47,85,154],"issue":[7,48],"than":[8],"Si":[9],"devices":[10],"due":[11],"to":[12,44,80],"their":[13],"fast-switching":[14],"speeds.":[15],"The":[16,84,143],"problem":[18],"can":[19,87,150],"reduce":[20,152],"system":[21],"reliability":[22],"and":[23,63,69,91,160],"introduce":[24],"additional":[25,120],"losses,":[26,111],"limiting":[27],"the":[28,46,53,57,66,71,81,92,105,113,124,129,132,147,153,157,162],"performance":[29],"of":[30,49,131,165],"MOSFETs.":[32,51,167],"In":[33],"this":[34],"article,":[35],"an":[36],"active":[37,114],"gate":[38,82,102],"driver":[39,103],"(AGD)":[40],"circuit":[41,108,126],"is":[42,60,135],"proposed":[43,54,106,133,148],"mitigate":[45],"Regarding":[52],"AGD":[55,107],"circuit,":[56],"drain\u2013source":[58],"voltage":[59],"sampled,":[61],"scaled,":[62],"inverted":[64],"in":[65],"switching":[67,93,163],"processes,":[68],"then":[70],"displacement":[72],"current":[73],"induced":[74],"by":[75,137],"dv/dtis":[76],"extracted":[77],"or":[78],"pumped":[79],"node.":[83],"voltages":[86,155],"be":[88],"suppressed":[89],"effectively,":[90],"speeds":[94,164],"are":[95],"also":[96],"enhanced.":[97],"Additionally,":[98],"compared":[99],"with":[100],"other":[101],"circuits,":[104],"has":[109],"low-power":[110],"while":[112],"auxiliary":[115],"components":[116],"do":[117],"not":[118],"require":[119],"control":[121],"signals,":[122],"simplifying":[123],"driving":[125],"design.":[127],"Finally,":[128],"effectiveness":[130],"method":[134,149],"validated":[136],"experiments":[138],"at":[139],"various":[140],"operating":[141],"conditions.":[142],"results":[144],"indicate":[145],"that":[146],"effectively":[151],"below":[156],"safety":[158],"threshold":[159],"improve":[161]},"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2025,"cited_by_count":2}],"updated_date":"2026-08-21T09:56:20.448147","created_date":"2025-10-10T00:00:00"}