{"id":"https://openalex.org/W4399413722","doi":"https://doi.org/10.1109/tie.2024.3398676","title":"Analysis of Volt-Second Error for Medium Voltage SiC MOSFET Power Modules","display_name":"Analysis of Volt-Second Error for Medium Voltage SiC MOSFET Power Modules","publication_year":2024,"publication_date":"2024-06-06","ids":{"openalex":"https://openalex.org/W4399413722","doi":"https://doi.org/10.1109/tie.2024.3398676"},"language":"en","primary_location":{"id":"doi:10.1109/tie.2024.3398676","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tie.2024.3398676","pdf_url":null,"source":{"id":"https://openalex.org/S58031724","display_name":"IEEE Transactions on Industrial Electronics","issn_l":"0278-0046","issn":["0278-0046","1557-9948"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Industrial Electronics","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"green","oa_url":"https://vbn.aau.dk/ws/files/715655539/Preprint_Analysis_of_Volt_Second_Compensation_for_Medium_Voltage_SiC_MOSFET_Power_Modules_2_.pdf","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5051000630","display_name":"Morten Rahr Nielsen","orcid":"https://orcid.org/0000-0002-2160-0465"},"institutions":[{"id":"https://openalex.org/I891191580","display_name":"Aalborg University","ror":"https://ror.org/04m5j1k67","country_code":"DK","type":"education","lineage":["https://openalex.org/I891191580"]}],"countries":["DK"],"is_corresponding":true,"raw_author_name":"Morten Rahr Nielsen","raw_affiliation_strings":["AAU Energy, Aalborg University, Aalborg, Denmark"],"raw_orcid":"https://orcid.org/0000-0002-2160-0465","affiliations":[{"raw_affiliation_string":"AAU Energy, Aalborg University, Aalborg, Denmark","institution_ids":["https://openalex.org/I891191580"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5009966547","display_name":"Hongbo Zhao","orcid":"https://orcid.org/0000-0002-0043-0030"},"institutions":[{"id":"https://openalex.org/I891191580","display_name":"Aalborg University","ror":"https://ror.org/04m5j1k67","country_code":"DK","type":"education","lineage":["https://openalex.org/I891191580"]}],"countries":["DK"],"is_corresponding":false,"raw_author_name":"Hongbo Zhao","raw_affiliation_strings":["AAU Energy, Aalborg University, Aalborg, Denmark"],"raw_orcid":"https://orcid.org/0000-0002-0043-0030","affiliations":[{"raw_affiliation_string":"AAU Energy, Aalborg University, Aalborg, Denmark","institution_ids":["https://openalex.org/I891191580"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5046550625","display_name":"Michael M\u00f8ller Bech","orcid":"https://orcid.org/0000-0001-9997-4590"},"institutions":[{"id":"https://openalex.org/I891191580","display_name":"Aalborg University","ror":"https://ror.org/04m5j1k67","country_code":"DK","type":"education","lineage":["https://openalex.org/I891191580"]}],"countries":["DK"],"is_corresponding":false,"raw_author_name":"Michael M\u00f8ller Bech","raw_affiliation_strings":["AAU Energy, Aalborg University, Aalborg, Denmark"],"raw_orcid":"https://orcid.org/0000-0001-9997-4590","affiliations":[{"raw_affiliation_string":"AAU Energy, Aalborg University, Aalborg, Denmark","institution_ids":["https://openalex.org/I891191580"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5043640403","display_name":"Stig Munk\u2010Nielsen","orcid":"https://orcid.org/0000-0001-9653-5437"},"institutions":[{"id":"https://openalex.org/I891191580","display_name":"Aalborg University","ror":"https://ror.org/04m5j1k67","country_code":"DK","type":"education","lineage":["https://openalex.org/I891191580"]}],"countries":["DK"],"is_corresponding":false,"raw_author_name":"Stig Munk-Nielsen","raw_affiliation_strings":["AAU Energy, Aalborg University, Aalborg, Denmark"],"raw_orcid":"https://orcid.org/0000-0001-9653-5437","affiliations":[{"raw_affiliation_string":"AAU Energy, Aalborg University, Aalborg, Denmark","institution_ids":["https://openalex.org/I891191580"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5051000630"],"corresponding_institution_ids":["https://openalex.org/I891191580"],"apc_list":null,"apc_paid":null,"fwci":0.2003,"has_fulltext":true,"cited_by_count":1,"citation_normalized_percentile":{"value":0.47821786,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":91,"max":95},"biblio":{"volume":"71","issue":"12","first_page":"15994","last_page":"16002"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10175","display_name":"Advanced DC-DC Converters","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":0.9988999962806702,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/volt","display_name":"Volt","score":0.748449444770813},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.7097746729850769},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.6026687622070312},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.589503824710846},{"id":"https://openalex.org/keywords/power-mosfet","display_name":"Power MOSFET","score":0.5154434442520142},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5079939961433411},{"id":"https://openalex.org/keywords/silicon-carbide","display_name":"Silicon carbide","score":0.48515376448631287},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.46213430166244507},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.41170090436935425},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.39866042137145996},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2311381697654724},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.22735440731048584},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.19405841827392578}],"concepts":[{"id":"https://openalex.org/C157985801","wikidata":"https://www.wikidata.org/wiki/Q25250","display_name":"Volt","level":3,"score":0.748449444770813},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.7097746729850769},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.6026687622070312},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.589503824710846},{"id":"https://openalex.org/C88653102","wikidata":"https://www.wikidata.org/wiki/Q570553","display_name":"Power MOSFET","level":5,"score":0.5154434442520142},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5079939961433411},{"id":"https://openalex.org/C2780722187","wikidata":"https://www.wikidata.org/wiki/Q412356","display_name":"Silicon carbide","level":2,"score":0.48515376448631287},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.46213430166244507},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.41170090436935425},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.39866042137145996},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2311381697654724},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.22735440731048584},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.19405841827392578},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/tie.2024.3398676","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tie.2024.3398676","pdf_url":null,"source":{"id":"https://openalex.org/S58031724","display_name":"IEEE Transactions on Industrial Electronics","issn_l":"0278-0046","issn":["0278-0046","1557-9948"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Industrial Electronics","raw_type":"journal-article"},{"id":"pmh:oai:pure.atira.dk:publications/4b12ba68-11ca-4643-96e6-22f91c106455","is_oa":true,"landing_page_url":"https://vbn.aau.dk/da/publications/4b12ba68-11ca-4643-96e6-22f91c106455","pdf_url":"https://vbn.aau.dk/ws/files/715655539/Preprint_Analysis_of_Volt_Second_Compensation_for_Medium_Voltage_SiC_MOSFET_Power_Modules_2_.pdf","source":{"id":"https://openalex.org/S4306401731","display_name":"VBN Forskningsportal (Aalborg Universitet)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I891191580","host_organization_name":"Aalborg University","host_organization_lineage":["https://openalex.org/I891191580"],"host_organization_lineage_names":[],"type":"repository"},"license":"other-oa","license_id":"https://openalex.org/licenses/other-oa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Nielsen, M R, Zhao, H, Bech, M M & Munk-Nielsen, S 2024, 'Analysis of Volt-Second Error for Medium Voltage SiC MOSFET Power Modules', I E E E Transactions on Industrial Electronics, vol. 71, no. 12, pp. 15994-16002. https://doi.org/10.1109/TIE.2024.3398676","raw_type":"info:eu-repo/semantics/publishedVersion"}],"best_oa_location":{"id":"pmh:oai:pure.atira.dk:publications/4b12ba68-11ca-4643-96e6-22f91c106455","is_oa":true,"landing_page_url":"https://vbn.aau.dk/da/publications/4b12ba68-11ca-4643-96e6-22f91c106455","pdf_url":"https://vbn.aau.dk/ws/files/715655539/Preprint_Analysis_of_Volt_Second_Compensation_for_Medium_Voltage_SiC_MOSFET_Power_Modules_2_.pdf","source":{"id":"https://openalex.org/S4306401731","display_name":"VBN Forskningsportal (Aalborg Universitet)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I891191580","host_organization_name":"Aalborg University","host_organization_lineage":["https://openalex.org/I891191580"],"host_organization_lineage_names":[],"type":"repository"},"license":"other-oa","license_id":"https://openalex.org/licenses/other-oa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Nielsen, M R, Zhao, H, Bech, M M & Munk-Nielsen, S 2024, 'Analysis of Volt-Second Error for Medium Voltage SiC MOSFET Power Modules', I E E E Transactions on Industrial Electronics, vol. 71, no. 12, pp. 15994-16002. https://doi.org/10.1109/TIE.2024.3398676","raw_type":"info:eu-repo/semantics/publishedVersion"},"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.8199999928474426}],"awards":[],"funders":[{"id":"https://openalex.org/F4320321409","display_name":"Aalborg Universitet","ror":"https://ror.org/04m5j1k67"}],"has_content":{"pdf":true,"grobid_xml":false},"content_urls":{"pdf":"https://content.openalex.org/works/W4399413722.pdf"},"referenced_works_count":28,"referenced_works":["https://openalex.org/W267840210","https://openalex.org/W2001319189","https://openalex.org/W2003935246","https://openalex.org/W2029699094","https://openalex.org/W2034938564","https://openalex.org/W2087948710","https://openalex.org/W2098891187","https://openalex.org/W2128497696","https://openalex.org/W2147928622","https://openalex.org/W2160286674","https://openalex.org/W2203838134","https://openalex.org/W2472698299","https://openalex.org/W2577976329","https://openalex.org/W2580835476","https://openalex.org/W2613350384","https://openalex.org/W2736749564","https://openalex.org/W2797098828","https://openalex.org/W2936597696","https://openalex.org/W2965379016","https://openalex.org/W2971831965","https://openalex.org/W2990252846","https://openalex.org/W2999020641","https://openalex.org/W3036421215","https://openalex.org/W3038024411","https://openalex.org/W4327661948","https://openalex.org/W4366967100","https://openalex.org/W4381300867","https://openalex.org/W4387250912"],"related_works":["https://openalex.org/W2966234605","https://openalex.org/W2906268959","https://openalex.org/W2589623306","https://openalex.org/W2385412623","https://openalex.org/W1968304866","https://openalex.org/W2082505892","https://openalex.org/W2543878150","https://openalex.org/W2258872751","https://openalex.org/W1566503697","https://openalex.org/W808580226"],"abstract_inverted_index":{"This":[0],"article":[1],"presents":[2],"an":[3],"analytical":[4,31,91,114],"derivation":[5],"of":[6,23,37,48,57,67,81,100,103,128],"the":[7,19,24,34,38,40,44,49,52,65,73,78,113,121,129],"volt-second":[8],"error":[9],"caused":[10],"by":[11],"converter":[12,59],"nonlinearities":[13,60],"such":[14],"as":[15,72],"dead":[16,82],"time":[17,83,126],"and":[18,43,51,97],"finite":[20],"switching":[21,75,101,130],"speeds":[22],"emerging":[25],"medium":[26],"voltage":[27],"silicon-carbide":[28,107],"MOSFETs.":[29],"The":[30,55,89],"model":[32,92,115],"considers":[33],"transient":[35],"behavior":[36],"MOSFETs,":[39],"gate-driving":[41],"circuitry,":[42],"intrinsic":[45],"parasitic":[46],"capacitances":[47],"MOSFETs":[50],"power":[53,109],"module.":[54,110],"importance":[56],"compensating":[58],"has":[61],"been":[62],"revived":[63],"with":[64,95],"utilization":[66],"wide":[68],"bandgap":[69],"semiconductor":[70],"devices":[71],"increased":[74],"frequency":[76],"penalizes":[77],"relative":[79],"impact":[80],"squared":[84],"in":[85],"motor":[86],"drive":[87],"applications.":[88],"first-order":[90],"is":[93,116],"validated":[94],"experimental":[96],"simulated":[98],"results":[99],"events":[102],"a":[104],"10":[105],"kV":[106],"MOSFET":[108],"In":[111],"addition,":[112],"utilized":[117],"to":[118],"map":[119],"out":[120],"individual":[122],"contributions":[123],"from":[124],"each":[125],"period":[127],"event.":[131]},"counts_by_year":[{"year":2025,"cited_by_count":1}],"updated_date":"2025-12-22T23:10:17.713674","created_date":"2025-10-10T00:00:00"}